CN112499578B - Semiconductor high-temperature-resistant pressure temperature sensor chip and preparation method thereof - Google Patents
Semiconductor high-temperature-resistant pressure temperature sensor chip and preparation method thereof Download PDFInfo
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- CN112499578B CN112499578B CN202011300692.3A CN202011300692A CN112499578B CN 112499578 B CN112499578 B CN 112499578B CN 202011300692 A CN202011300692 A CN 202011300692A CN 112499578 B CN112499578 B CN 112499578B
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 25
- 238000002360 preparation method Methods 0.000 title claims abstract description 10
- 238000000034 method Methods 0.000 claims abstract description 20
- 238000004519 manufacturing process Methods 0.000 claims abstract description 14
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 60
- 229910052710 silicon Inorganic materials 0.000 claims description 35
- 239000010703 silicon Substances 0.000 claims description 35
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 34
- 229910052697 platinum Inorganic materials 0.000 claims description 20
- 229910006404 SnO 2 Inorganic materials 0.000 claims description 18
- 230000007704 transition Effects 0.000 claims description 18
- 238000004544 sputter deposition Methods 0.000 claims description 9
- 238000005530 etching Methods 0.000 claims description 8
- 239000010408 film Substances 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 8
- 238000012360 testing method Methods 0.000 claims description 8
- 238000001816 cooling Methods 0.000 claims description 5
- 238000005516 engineering process Methods 0.000 claims description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- 238000001259 photo etching Methods 0.000 claims description 4
- 229920002120 photoresistant polymer Polymers 0.000 claims description 4
- 238000012216 screening Methods 0.000 claims description 4
- 239000010409 thin film Substances 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 6
- 238000005259 measurement Methods 0.000 description 5
- 239000000758 substrate Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0083—Temperature control
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
- G01D21/00—Measuring or testing not otherwise provided for
- G01D21/02—Measuring two or more variables by means not covered by a single other subclass
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0264—Pressure sensors
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Measuring Fluid Pressure (AREA)
Abstract
The invention discloses a semiconductor high temperature resistant pressure temperature sensor chip, which adopts a Pt thermistor manufactured by a semiconductor process as a compensation resistor, realizes temperature compensation in a wide range, realizes the use in occasions with higher temperature requirements, and simultaneously solves the problems that the effect of directly sticking a Pt film to Si0 2 is poor and the Pt film is easy to fall. Meanwhile, the whole preparation method is simple to operate and can be used for mass production.
Description
The invention relates to the technical field of sensor chips, in particular to a semiconductor high-temperature-resistant pressure temperature sensor chip and a preparation method thereof.
Background
The silicon pressure sensor is usually manufactured by adopting a MEMS process, and takes a piezoresistor type as an example: the semiconductor monocrystalline silicon is used as a pressure sensitive element material, four diffusion resistors with piezoresistive effect and manufactured by a semiconductor process are manufactured at the proper positions of the pressed membrane by adopting a Wheatstone bridge, the resistance value changes due to the piezoresistive effect of the silicon resistor, the output of the bridge changes greatly due to the deformation of the membrane, and the pressure change is reflected, so that the change rule of the resistance is in one-to-one correspondence with the pressure change according to the measurement principle. However, in the practical use process, the output error of the chip which is not subjected to temperature compensation is very large, the measurement becomes meaningless, the traditional temperature compensation mode adopts a PN junction manufactured on a semiconductor chip, the temperature is measured by utilizing the temperature characteristic of the PN junction to compensate the parameter of the pressure chip, but the PN junction is limited by the temperature and the accuracy of the PN junction and can only be compensated in a very narrow range, the accuracy after the compensation can not reach very high performance, the medium use temperature of the semiconductor pressure chip can not be too high, generally can not exceed 100 ℃, and the maximum accuracy of the compensation is also very limited. With the increasing application range of semiconductor pressure sensors, the application range of the semiconductor pressure sensors is increased, and the working temperature range is also increased, so that the technology of temperature sensor chips with wider temperature compensation and high temperature resistance is required.
Disclosure of Invention
The invention aims to avoid the defects in the prior art and provide a pressure temperature sensor chip with wide temperature compensation and high temperature resistance.
The aim of the invention is achieved by the following technical scheme:
The semiconductor high temperature resistant pressure temperature sensor chip comprises a pressure sensor chip and a platinum resistor, wherein the platinum resistor consists of a plurality of thin film resistor strips, and a SnO 2 transition layer is arranged between the platinum resistor and a silicon lining plate of the pressure sensor chip; the platinum resistor, the SnO 2 transition layer and the pressure sensor chip are of an integrated structure.
Preferably, the pressure sensor chip comprises a silicon lining plate and an electrode, wherein the electrode is arranged on the front surface of the silicon lining plate, and a cup-shaped cavity is arranged on the back surface of the silicon lining plate.
Another object of the present invention is to provide a pressure temperature sensor chip with wide temperature compensation and high temperature resistance, which avoids the disadvantages of the prior art.
The preparation method of the semiconductor high-temperature-resistant pressure temperature sensor chip is characterized by comprising the following steps of:
the first step: injecting four electrodes on the front side of the silicon substrate by using a photoetching technology, and etching a cup-shaped concave cavity on the back side of the silicon substrate to prepare a sheet;
and a second step of: applying photoresist on the front surface of the sheet and leaving a region for planning to manufacture platinum resistor;
And a third step of: sputtering a layer of Sn in vacuum in a region for manufacturing a platinum resistor for 8-12 minutes, heating to 450-500 ℃, and naturally cooling to 120+/-5 ℃ under the condition of oxygen to generate a SnO 2 transition layer;
Fourth step: and sputtering a Pt layer on the SnO 2 transition layer in vacuum, and etching a preset resistance value on the Pt layer by adopting a laser scribing method.
Preferably, the method further comprises the testing steps of: and (3) immediately and quickly placing the product silicon wafer obtained in the step four in an environment of 0 ℃ after heating to 150 ℃, carrying out temperature impact, analyzing and observing whether a film falls off, recording a measured resistance value at 0 ℃, and screening out a product meeting the conditions.
Preferably, the method further comprises a package lead testing step.
The invention has the beneficial effects that:
The invention adopts the Pt thermistor manufactured by the semiconductor process as the compensation resistor, the Pt temperature measuring resistor is used as the temperature measuring element, the Pt temperature measuring resistor realizes measurement by utilizing the principle that the resistance of metal changes linearly along with the change of the working temperature, and has excellent stability and accuracy, and meanwhile, the Pt resistor measures the temperature of 450 ℃, so that the chip can be compensated in a very wide range, the chip can be used in occasions with higher temperature requirements, and the numerical value of the measured temperature is output. The pt resistor integrated on the chip is used for directly measuring the working temperature of the medium, can output the real-time temperature signal, can also be used for temperature correction of the pressure measuring unit, and ensures the accuracy requirement of the pressure measuring unit at the high temperature of the medium. And the temperature signal and the pressure signal are processed by MCU data through the Pt resistor on the chip to measure the environmental temperature of the chip, so that the compensation between-40 ℃ and 130 ℃ is realized, and the high-precision measurement is realized. .
Because of the material characteristics, the effect of directly sticking the Pt film and the Si0 2 is poor, the Pt film is easy to fall off, the preparation method of the semiconductor high-temperature-resistant pressure temperature sensor chip is characterized in that a layer of SnO 2 (tin dioxide) transition layer is firstly prepared before the preparation of the Pt resistor, the SnO 2 transition layer is prepared by a special process of firstly sputtering a layer of Sn in vacuum for 8-12 minutes to firmly stick the Sn on a silicon wafer, then heating and aerobically cooling the silicon wafer, the adhesion effect of the SnO 2 transition layer on a silicon lining plate is good, and then the Pt film resistor is manufactured on the SnO 2 transition layer. The method can solve the problems of poor effect and easy falling of the direct adhesion of the Pt film resistor and the Si0 2. Meanwhile, the whole preparation method is simple to operate and can be used for mass production.
Drawings
The invention is further illustrated by the accompanying drawings, the content of which does not constitute any limitation of the invention.
FIG. 1 is a schematic diagram of one embodiment of a half-body high temperature resistant pressure temperature sensor chip.
FIG. 2 is another schematic diagram of one embodiment of a half-body high temperature resistant pressure temperature sensor chip.
Fig. 1 and 2 include:
1-silicon chip (also called as a silicon lining board), 2-Pt resistor, 3-pressure sensor chip, 4-electrode and 5-cavity.
Detailed Description
The invention is further illustrated with reference to the following examples.
Examples
The preparation method of the semiconductor high-temperature-resistant pressure temperature sensor chip comprises the following steps:
The first step: injecting four electrodes on the front side of a silicon wafer (also called as a silicon substrate) by using a photoetching technology, and etching a cup-shaped concave cavity on the back side of the silicon wafer (silicon substrate) to prepare a sheet;
and a second step of: applying photoresist on the front surface of the sheet and leaving a region for planning to manufacture platinum resistor;
And a third step of: sputtering a layer of Sn in vacuum in a region for manufacturing a platinum resistor for 8-12 minutes, heating to 450-500 ℃, and naturally cooling to 120+/-5 ℃ under the condition of oxygen to generate a SnO 2 transition layer;
Fourth step: and sputtering a Pt layer on the SnO 2 transition layer in vacuum, and etching a preset resistance value on the Pt layer by adopting a laser scribing method, wherein the resistance value can be 100 ohms, 500 ohms, 1000 ohms or other values.
Fifth step: and (3) immediately and quickly placing the product silicon wafer obtained in the step four in an environment of 0 ℃ after heating to 150 ℃, carrying out temperature impact, analyzing and observing whether a film falls off, recording a measured resistance value at 0 ℃, and screening out a product meeting the conditions.
Sixth step: and (5) testing the lead wires of the dicing packaging.
The semiconductor high temperature resistant pressure temperature sensor chip prepared by the method comprises a pressure sensor chip and a platinum resistor, wherein the platinum resistor consists of a plurality of thin film resistor strips, and a SnO 2 transition layer is arranged between the platinum resistor and a silicon lining plate of the pressure sensor chip; the platinum resistor, the SnO 2 transition layer and the pressure sensor chip are of an integrated structure. The pressure sensor chip comprises a silicon lining plate and an electrode, wherein the electrode is arranged on the front surface of the silicon lining plate, and a cup-shaped cavity is arranged on the back surface of the silicon lining plate.
Wherein the pressure sensor chip adopts a diffusion resistance mode of a Wheatstone bridge structure, or adopts a capacitance measurement mode or a resonant silicon type structure,
The above-prepared product was tested as follows:
The testing method comprises the following steps: immediately and rapidly placing the product silicon wafer in an environment of 0 ℃ after the product silicon wafer is heated to 150 ℃, carrying out temperature impact, analyzing and observing whether a film falls off, recording a measured resistance value at 0 ℃, and screening out a product meeting the conditions
Test data:
conclusion: according to the test, the semiconductor high-temperature-resistant pressure temperature sensor chip has a wide temperature compensation range, high temperature resistance and stability, and Pt resistance is not easy to drop.
Finally, it should be noted that the above embodiments are only for illustrating the technical solution of the present invention and are not intended to limit the scope of the claims. It will be appreciated by those skilled in the art that changes may be made to the embodiments described and illustrated herein, and equivalents may be substituted for elements thereof without departing from the true spirit and scope of the embodiments.
Claims (5)
1. The utility model provides a high temperature resistant pressure temperature sensor chip of semiconductor which characterized in that: the pressure sensor comprises a pressure sensor chip and a platinum resistor, wherein the platinum resistor consists of a plurality of thin film resistor strips, and a SnO 2 transition layer is arranged between the platinum resistor and a silicon lining plate of the pressure sensor chip; the platinum resistor, the SnO 2 transition layer and the pressure sensor chip are of an integrated structure;
the preparation method of the semiconductor high-temperature-resistant pressure temperature sensor chip comprises the following steps:
The first step: injecting four electrodes on the front side of the silicon wafer by using a photoetching technology, and etching a cup-shaped cavity on the back side of the silicon wafer to prepare a sheet;
and a second step of: applying photoresist on the front surface of the sheet and leaving a region for planning to manufacture platinum resistor;
And a third step of: sputtering a layer of Sn in vacuum in a region for manufacturing a platinum resistor for 8-12 minutes, heating to 450-500 ℃, and naturally cooling to 120+/-5 ℃ under the condition of oxygen to generate a SnO 2 transition layer;
Fourth step: and sputtering a Pt layer on the SnO 2 transition layer in vacuum, and etching a preset resistance value on the Pt layer by adopting a laser scribing method.
2. The semiconductor high temperature resistant pressure temperature sensor chip of claim 1, wherein: the pressure sensor chip comprises a silicon lining plate and an electrode, wherein the electrode is arranged on the front surface of the silicon lining plate, and a cup-shaped cavity is arranged on the back surface of the silicon lining plate.
3. A method for manufacturing a semiconductor high temperature resistant pressure temperature sensor chip, which is used for manufacturing the semiconductor high temperature resistant pressure temperature sensor chip according to claim 1 or 2, and is characterized by comprising the following steps:
The first step: injecting four electrodes on the front side of the silicon wafer by using a photoetching technology, and etching a cup-shaped cavity on the back side of the silicon wafer to prepare a sheet;
and a second step of: applying photoresist on the front surface of the sheet and leaving a region for planning to manufacture platinum resistor;
And a third step of: sputtering a layer of Sn in vacuum in a region for manufacturing a platinum resistor for 8-12 minutes, heating to 450-500 ℃, and naturally cooling to 120+/-5 ℃ under the condition of oxygen to generate a SnO 2 transition layer;
Fourth step: and sputtering a Pt layer on the SnO 2 transition layer in vacuum, and etching a preset resistance value on the Pt layer by adopting a laser scribing method.
4. A method for manufacturing a semiconductor high temperature resistant pressure temperature sensor chip according to claim 3, wherein: the method also comprises the following testing steps: and (3) immediately and quickly placing the product silicon wafer obtained in the step four in an environment of 0 ℃ after heating to 150 ℃, carrying out temperature impact, analyzing and observing whether a film falls off, recording a measured resistance value at 0 ℃, and screening out a product meeting the conditions.
5. The method for manufacturing the semiconductor high-temperature-resistant pressure temperature sensor chip according to claim 4, wherein the method comprises the following steps: the method also comprises a step of testing the package leads.
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| Application Number | Priority Date | Filing Date | Title |
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| CN112499578B true CN112499578B (en) | 2024-05-10 |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101639391A (en) * | 2009-09-07 | 2010-02-03 | 哈尔滨工业大学 | Polysilicon nanometer film pressure sensor with temperature sensor and manufacture method thereof |
| CN101726526A (en) * | 2009-11-20 | 2010-06-09 | 西安交通大学 | Solid electrolyte SO2 gas sensor and manufacturing method thereof |
| CN106959169A (en) * | 2017-04-18 | 2017-07-18 | 上海交通大学 | A kind of Multifunction sensor chip and preparation method thereof |
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| CN109087819B (en) * | 2018-08-13 | 2020-07-31 | 贵州理工学院 | Preparation method of polyaniline/ruthenium oxide/tin dioxide composite electrode material |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101639391A (en) * | 2009-09-07 | 2010-02-03 | 哈尔滨工业大学 | Polysilicon nanometer film pressure sensor with temperature sensor and manufacture method thereof |
| CN101726526A (en) * | 2009-11-20 | 2010-06-09 | 西安交通大学 | Solid electrolyte SO2 gas sensor and manufacturing method thereof |
| CN106959169A (en) * | 2017-04-18 | 2017-07-18 | 上海交通大学 | A kind of Multifunction sensor chip and preparation method thereof |
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