CN101785109B - 具有内部稳定性网络的rf晶体管封装以及形成具有内部稳定性网络的rf晶体管封装的方法 - Google Patents
具有内部稳定性网络的rf晶体管封装以及形成具有内部稳定性网络的rf晶体管封装的方法 Download PDFInfo
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Abstract
一种封装的RF晶体管器件包括RF晶体管管芯,该RF晶体管管芯包括多个RF晶体管单元。所述多个RF晶体管单元的每个包括控制端子和输出端子。RF晶体管器件还包括RF输入引线以及耦合在所述RF输入引线和所述RF晶体管管芯之间的输入匹配网络。输入匹配网络包括具有相应输入端子的多个电容器。电容器的输入端子耦合到RF晶体管单元的相应晶体管单元的控制端子。
Description
技术领域
本发明总体上涉及RF晶体管,并且更具体地本发明涉及具有输入匹配网络的封装的RF晶体管以及形成具有输入匹配网络的封装的RF晶体管的方法。
背景技术
封装的RF功率器件一般包括安装在基底上并被包封在封装中的晶体管管芯。RF输入信号通过从该封装外部延伸到该封装内部的RF输入引线而被供应到晶体管,RF输出信号通过从该封装内部延伸到外部的RF输出引线而从该器件被传送。输入匹配电路能够被包括在该封装内,并且能够连接在RF输入引线和RF晶体管的输入端子之间。该输入匹配电路提供在晶体管的基本工作频率处在晶体管的输入处的阻抗匹配。
RF晶体管能够包括大外围晶体管管芯,该管芯包括多个在公共衬底上且并联连接的分立晶体管单元。输入匹配可能对这样的器件特别有利,因为它能够提高器件的可用带宽。然而,输入匹配网络一般包括单个电容器,其能够在大外围晶体管管芯的邻近单元之间产生较低频率反馈路径。这种反馈路径能够降低整个器件的稳定性。
而且,输入匹配网络的元件的阻抗值必须被仔细选择以避免产生奇模振荡。阻抗值的选择,包括选择通过接合线长度的适当电感,会限制匹配网络的拓扑。
发明内容
根据一些实施例的封装的RF晶体管器件包括RF晶体管管芯,RF晶体管管芯包括多个RF晶体管单元。所述多个RF晶体管单元的每个包括控制端子和输出端子。RF晶体管器件还包括RF输入引线以及耦合在所述RF输入引线和所述RF晶体管管芯之间的输入匹配网络。输入匹配网络包括具有相应输入端子的多个电容器。电容器的输入端子耦合到RF晶体管单元的相应晶体管单元的控制端子。
所述输入网络还可以包括在RF输入引线和电容器的相应电容器的输入端子之间的第一线接合(wire bond)以及在电容器的相应电容器的输入端子和RF晶体管单元的相应晶体管单元的控制端子之间的第二线接合。
封装的RF晶体管器件还可以包括:RF输出引线,其耦合到RF晶体管单元的相应晶体管单元的输出端子;以及封装,其容纳(house)RF晶体管管芯和输入匹配网络,并且RF信号输入引线和RF信号输出引线从该封装延伸。
封装的RF晶体管器件还可以包括基底,并且RF晶体管管芯可以被安装在RF输入引线和RF输出引线之间的基底上。所述多个电容器可以被提供为RF输入引线和RF晶体管管芯之间的基底上的电容器块。电容器块可以包括公共地端子和多个分立输入端子,并且还可以包括公共电介质。在一些实施例中,所述多个电容器包括多个分立器件。
根据进一步实施例的封装的RF晶体管器件包括RF晶体管管芯,RF晶体管管芯包括多个RF晶体管单元。所述多个RF晶体管单元的每个包括控制端子和输出端子。封装的RF晶体管器件还包括RF输入引线以及耦合在所述RF输入引线和所述RF晶体管管芯之间的输入匹配网络。输入匹配网络包括分离电容器(split capacitor),所述分离电容器具有多个输入端子。分离电容器的输入端子耦合到RF晶体管单元的相应晶体管单元的控制端子。
输入网络还可以包括在RF输入引线和分离电容器的相应输入端子之间的第一线接合以及在分离电容器的相应输入端子和RF晶体管单元的相应晶体管单元的控制端子之间的第二线接合。
封装的RF晶体管器件还可以包括:RF输出引线,其耦合到RF晶体管单元的相应晶体管单元的输出端子;以及封装,其容纳RF晶体管管芯和输入匹配网络,并且RF信号输入引线和RF信号输出引线从该封装延伸。
封装的RF晶体管器件还可以包括基底,并且RF晶体管管芯可以被安装在RF输入引线和RF输出引线之间的基底上。分离电容器可以在RF输入引线和RF晶体管管芯之间的基底上。分离电容器还可以包括公共地端子和/或公共电介质。
本发明的一些实施例提供形成封装的RF晶体管器件的方法。该方法包括将包括多个RF晶体管单元的晶体管安装在基底上。所述多个RF晶体管单元的每个包括控制端子和输出端子。该方法还包括:将具有相应输入端子的多个电容器安装在该基底上;将电容器的输入端子耦合到RF晶体管单元的相应晶体管单元的控制端子;以及将RF输入引线耦合到电容器的输入端子。
所述方法还可以包括在基底上形成封装外壳,该外壳包封所述晶体管和所述多个电容器,并且RF输入引线从该封装延伸。将RF输入引线耦合到电容器的输入端子可以包括在RF输入引线和电容器的相应电容器的输入端子之间形成第一线接合,并且将电容器的输入端子耦合到RF晶体管单元的相应晶体管单元的控制端子可以包括在电容器的相应电容器的输入端子和RF晶体管单元的相应晶体管单元的控制端子之间形成第二线接合。
所述方法还可以包括:将RF输出引线耦合到RF晶体管单元的相应晶体管单元的输出端子;以及形成容纳RF晶体管管芯和所述多个电容器的封装外壳,并且RF信号输入引线和RF信号输出引线从该封装延伸。
所述方法还可以包括将RF晶体管管芯安装在RF输入引线和RF输出引线之间的基底上,并且安装所述多个电容器可以包括将电容块安装在RF输入引线和RF晶体管管芯之间的基底上。电容器块可以包括公共地端子和多个分立输入端子。电容器块还可以包括公共电介质。在一些实施例中,所述多个电容器可以包括多个分立器件。
根据本发明的进一步实施例,封装的RF晶体管器件包括:包括多个RF晶体管单元的RF晶体管管芯,所述多个RF晶体管单元的每个包括控制端子和输出端子;RF输入引线和RF输出引线;以及匹配网络,其耦合在RF输入引线或RF输出引线与RF晶体管管芯之间。匹配网络包括具有相应输入端子的多个电容器。电容器的输入端子耦合到RF晶体管单元的相应晶体管单元的对应控制端子或输出端子。
在一些实施例中,匹配网络包括耦合在RF输出引线和RF晶体管管芯之间的输出匹配网络,并且电容器的输入端子耦合到RF晶体管单元的相应晶体管单元的对应输出端子。
附图说明
附图被包括以提供对本发明的进一步理解并且并入本申请并构成本申请的一部分,所述附图说明了本发明的(一个或多个)特定实施例。在附图中:
图1是常规RF功率晶体管的功能框图。
图2A是根据本发明一些实施例的封装的RF功率晶体管的透视图。
图2B是根据本发明一些实施例的封装的RF功率晶体管的功能框图。
图3是根据本发明一些实施例的封装的RF功率晶体管的示意性电路图。
图4是根据本发明一些实施例的封装的RF功率晶体管的布局的平面图。
图5是根据本发明一些实施例的分离电容器的截面图。
具体实施方式
现在将参照附图在下文中更全面地描述本发明的实施例,在所述附图中示出了本发明的实施例。然而,本发明可以以许多不同的形式来实现并且不应当解释为限于本文所阐述的实施例。相反,提供这些实施例以便本公开将是彻底且完整的,并且将向本领域技术人员全面地传达本发明的范围。相似的数字自始至终指代相似的元件。
要理解,尽管术语第一、第二等等可以在本文中用来描述各种元件,但是这些元件不应当受这些术语限制。这些术语仅用来区分一个元件与另一个元件。例如,第一元件可以被称作第二元件,并且类似地第二元件可以被称作第一元件,而不偏离本发明的范围。如本文所用的,术语“和/或”包括相关所列项的一个或多个的任一和所有组合。
本文所用的术语是仅用于描述特定实施例的目的而不旨在限制本发明。如本文所用的,单数形式“一”、“一个”和“该”旨在还包括复数形式,除非上下文另外明确指出。还要理解,术语“包括”和/或“包含”在用于本文中时指定所述特征、整数、步骤、操作、元件和/或部件的存在,但不排除存在或添加一个或多个其他特征、整数、步骤、操作、元件、部件和/或其群组。
除非另外定义,本文所用的所有术语(包括技术和科学术语)具有与本发明所属的领域的普通技术人员普遍理解的相同的意思。还要理解,本文所用的术语应当被解释为具有与其在本说明书和相关领域的上下文中的意思相一致的意思而不要以理想化或过度正式的意义进行解释,除非本文明确如此定义。
要理解,当元件被称为“在另一个元件上”或“延伸到另一个元件上”时,其能够直接位于其他元件上或直接延伸到其他元件上或者也可以存在中间元件。相比而言,当元件被称为“直接在另一个元件上”或“直接延伸到另一个元件上”时,就不存在中间元件。还要理解,当元件被称为“连接”或“耦合”到另一个元件时,其能够直接连接或耦合到其他元件或者可以存在中间元件。相比而言,当元件被称为“直接连接”或“直接耦合”到另一个元件时,就不存在中间元件。
相对术语诸如“在...之下”或“在...之上”或“上”或“下”或“水平”或“横向”或“垂直”在本文中可以用来描述一个元件、层或区域相对另一个元件、层或区域的关系,如图中所示。要理解,这些术语旨在涵盖器件除了图中所示的定向之外的不同定向。
本发明的一些实施例提供封装的RF功率晶体管。RF功率晶体管一般包括并联操作的多个晶体管单元。根据本发明实施例能够被包括在封装中的晶体管能够包括横向扩散的MOSFETS(LDMOSFET)或其他半导体器件,诸如双极型器件、MESFET器件、HBT和HEMT器件。这些晶体管能够使用窄带隙或宽带隙半导体来制作。例如,这些晶体管能够包括硅LDMOS和/或双极型晶体管、和/或III-V器件,诸如GaAs MESFET、InGaP HBT、GaN HEMT器件、GaN双极型晶体管等等。
提供10瓦或更大功率的RF功率晶体管能够被封装为分立器件,如图1中以10示意性所示。封装的晶体管15(其例如可以包括FET或双极型器件)一般包括将RF输入引线14连接到晶体管15的控制电极(例如,FET的栅极G或双极型晶体管的基极)的输入匹配电路12。晶体管15可以是包括并联连接的多个晶体管单元的大外围RF晶体管。RF输出引线18连接到晶体管15的输出电极(例如,FET的漏极D或者双极型晶体管的集电极或发射极)。RF输入引线14和RF输出引线18延伸到该封装10的外部,如图1所示。FET 15的源极S可以接地。
封装的晶体管10可以被安装在印刷电路板(未示出)上。外部输出匹配电路(未示出)也可以被安装在印刷电路板上。偏置/RF双工器(diplexer)(未示出)可以连接到该外部输出匹配电路以将晶体管输出连接到RF输出。而且,DC电源(未示出)可以连接到晶体管的RF输出引线18。
内部匹配网络已经被提供在RF功率晶体管封装内,如图1所示。然而,这样的内部匹配网络一般包括单个电容器。如上面所解释的,将电容器包括在器件封装内可能在大外围晶体管管芯的邻近单元之间产生较低频率反馈路径,这会降低整个器件的稳定性。
根据本发明的一些实施例,封装RF晶体管的内部匹配网络包括多个并联电容器。从所述多个电容器到多单元RF晶体管管芯的相应单元提供线接合连接。
例如,内部匹配网络能够包括在邻近多单元RF晶体管管芯的封装的基底上的分离电容器和/或多个电容器。提供包括多个并联电容器的输入匹配网络能够减小和/或去除(一个或多个)低频反馈路径,这能够提高封装器件的稳定性。
根据本发明一些实施例的封装RF晶体管100大体示于图2A中且示意性地示于图2B中。如其中所示,封装的晶体管100包括延伸到该封装外部的RF输入引线14和RF输出引线18。RF输入引线14经过输入匹配电路112连接到晶体管115的控制端子(诸如栅极G),所述晶体管115可包括并联连接的多个晶体管单元。晶体管115的输出端子(诸如漏极D)连接到RF输出引线18。根据一些实施例,输入匹配电路包括多个电容器。输入匹配电路中的电容器的相应电容器可以耦合到RF晶体管115的相应晶体管单元。
根据本发明实施例的包括RF功率晶体管115和输入匹配网络112的封装100的示意性电路图示于图3中,并且根据本发明实施例的封装100的物理布局示于图4中。参照图3和4,封装100包括RF晶体管115,RF晶体管115包括多个并联晶体管单元15A-N。尽管图3示出了包括四个并联单元15A、15B、15C和15N的RF晶体管115,但要明白,根据本发明实施例,RF晶体管115能够具有四个以上或小于四个的并联单元。晶体管单元15A-N的每一个包括控制或输入端子和输出端子。例如,在包括FET器件的实施例中,每个晶体管单元包括栅极G、漏极D和源极S。在一些实施例中,栅极G对应于控制或输入端子并且漏极D对应于输出端子,而源极S接地,如图3所示。
输入匹配网络112连接在RF信号输入引线14和晶体管单元15A-N的栅极G之间。输入匹配电路112可以包括:多个电感线接合连接,其包括在RF信号输入引线14和电容器块136之间延伸的接合线;以及电感线接合连接,其包括从电容器块136延伸到晶体管15A-N的栅极的接合线。
输入匹配网络112包括多个输入匹配电路12A到12N,每个匹配电路连接在RF信号输入引线14和RF晶体管115的相应单元15A-N之间。每个输入匹配网络12A-N包括第一电感32A-N、第二电感34A-N以及电容器36A-N。如图4所示,第一电感32A-N能够由RF输入引线14和对应电容器36A-N的端子之间的线接合连接来提供。第二电感34A-N能够由对应电容器36A-N的端子和RF晶体管115的对应单元15A-N的输入端子之间的线接合连接来提供。
输入匹配网络的晶体管36A-N能够被提供在能够包括分立电容器器件和/或能够包括分离电容器的电容器块136中,如图5所示。参照图5,电容器块136能够包括分离电容器,该分离电容器包括在公共电介质44上提供的多个分立输入端子38A到38N以及在基底140上的公共地端子42,如图4和5所示。连接RF输入引线14到输入端子38A-N的线接合32A-N以及连接输入端子38A-N到相应晶体管单元15A-N的输入端子的线接合34A-N也部分地示于图5中。
在图3和4所示的实施例中,晶体管单元15A到15N的输出端子经过输出匹配网络116连接到RF输出引线18。输出匹配网络的设计在本领域中是众所周知的,并且在此无需进行详细描述。
如图4所示,电容器块136能够被安装在邻近晶体管15的封装100的基底140上。要明白,封装100的基底能够指代晶体管15被安装在其上的任何结构构件,因而能够对应于衬底、法兰盘(flange)、管芯载体等等。
尽管主要结合输入匹配电路描述了本申请的实施例,但是本发明的实施例可以用于输出匹配电路(诸如图3和4所示的输出匹配电路116)中。例如,根据一些实施例,包括图5所示的分离电容器的电容器块136可以被提供在输出匹配电路116中。在这样的实施例中,每个晶体管单元15A-N的输出端子(例如漏极D)可以例如经由电感性接合线耦合到电容器块136的电容器的对应输入端子38A-N。输入端子38A-N同样可以例如经由电感性接合线耦合到RF输出引线18。电感性接合线的长度和电容器块136中的电容器的电容可以被选择成在晶体管管芯115的输出处提供适合的阻抗匹配。
而且,虽然主要结合包括单个晶体管管芯的封装RF晶体管描述了本申请的实施例,但是根据本发明的一些实施例,多个晶体管管芯11可以被包括在单个封装100中,并且为晶体管管芯中的一个或多个提供包括多个电容器的电容器块136。
根据本发明实施例的封装RF功率晶体管可以用于其中稳定性是重要的各种应用中。例如,根据本发明实施例的封装功率晶体管可以应用于诸如WiMAX、WCDMA、CDMA和/或包括将来(第四代)系统的其他系统之类的系统中。一般而言,本发明的实施例可以用于其中期望功率晶体管的稳定操作的任何应用中。
在附图和说明书中,已经公开了本发明的典型实施例,并且尽管采用了特定术语,但是它们仅在一般和描述性的意义上加以使用而不用于限制的目的,本发明的范围在所附权利要求中阐述。
Claims (17)
1.一种封装的RF晶体管器件,包括:
基底;
该基底上的RF输入引线;
RF晶体管管芯,其包括在该基底上的多个RF晶体管单元,所述多个RF晶体管单元的每个包括控制端子和输出端子;
输入匹配网络,其耦合在所述RF输入引线和所述RF晶体管管芯之间,所述输入匹配网络包括具有各自的输入端子的多个电容器,其中所述电容器的输入端子耦合到所述多个RF晶体管单元中的相应晶体管单元的控制端子,其中所述多个电容器被提供为在所述RF输入引线和RF晶体管管芯之间的基底上的电容器块,且其中所述电容器块包括公共地端子和多个分立输入端子。
2.权利要求1的封装的RF晶体管器件,其中所述输入匹配网络还包括在RF输入引线和所述多个电容器中的相应电容器的输入端子之间的第一线接合以及在所述多个电容器中的相应电容器的输入端子和所述多个RF晶体管单元中的相应晶体管单元的控制端子之间的第二线接合。
3.权利要求1的封装的RF晶体管器件,还包括:
RF输出引线,其耦合到所述多个RF晶体管单元中的相应晶体管单元的输出端子;以及
封装,其容纳RF晶体管管芯和输入匹配网络,并且RF输入引线和RF输出引线从该封装延伸。
4.权利要求3的封装的RF晶体管器件,其中所述RF晶体管管芯被安装在RF输入引线和RF输出引线之间的基底上。
5.权利要求1的封装的RF晶体管器件,其中所述电容器块还包括公共电介质。
6.一种封装的RF晶体管器件,包括:
RF晶体管管芯,其包括多个RF晶体管单元,所述多个RF晶体管单元的每个包括控制端子和输出端子;
RF输入引线;以及
输入匹配网络,其耦合在所述RF输入引线和所述RF晶体管管芯之间,所述输入匹配网络包括分离电容器,所述分离电容器包括多个输入端子,其中所述分离电容器的输入端子耦合到所述多个RF晶体管单元中的相应晶体管单元的控制端子;
其中所述分离电容器包括公共地端子和公共电介质。
7.权利要求6的封装的RF晶体管器件,其中所述输入匹配网络还包括在RF输入引线和分离电容器的相应输入端子之间的第一线接合以及在分离电容器的相应输入端子和所述多个RF晶体管单元中的相应晶体管单元的控制端子之间的第二线接合。
8.权利要求6的封装的RF晶体管器件,还包括:
RF输出引线,其耦合到所述多个RF晶体管单元中的相应晶体管单元的输出端子;以及
封装,其容纳RF晶体管管芯和输入匹配网络,并且RF输入引线和RF输出引线从该封装延伸。
9.权利要求8的封装的RF晶体管器件,还包括基底,其中RF晶体管管芯被安装在RF输入引线和RF输出引线之间的基底上,且其中分离电容器在RF输入引线和RF晶体管管芯之间的基底上。
10.一种形成封装的RF晶体管器件的方法,包括:
将RF晶体管管芯安装在基底上,该RF晶体管管芯包括多个RF晶体管单元,所述多个RF晶体管单元的每个包括控制端子和输出端子;
将多个电容器安装在该基底上,其中安装所述多个电容器包括将包括公共地端子和多个分立输入端子的电容器块安装在RF输入引线和RF晶体管管芯之间的基底上;
将所述电容器的分立输入端子耦合到所述多个RF晶体管单元中的相应晶体管单元的控制端子;以及
将RF输入引线耦合到所述电容器的分立输入端子。
11.权利要求10的方法,还包括:
在基底上形成封装外壳,该外壳包封所述RF晶体管管芯和所述多个电容器,并且RF输入引线从该封装延伸。
12.权利要求10的方法,还包括:
其中将RF输入引线耦合到电容器的分立输入端子包括在RF输入引线和所述多个电容器中的相应电容器的分立输入端子之间形成第一线接合,且其中将电容器的分立输入端子耦合到所述多个RF晶体管单元中的相应晶体管单元的控制端子包括在所述多个电容器中的相应电容器的分立输入端子和所述多个RF晶体管单元中的相应晶体管单元的控制端子之间形成第二线接合。
13.权利要求12的方法,还包括:
将RF输出引线耦合到所述多个RF晶体管单元中的相应晶体管单元的输出端子;以及
形成容纳RF晶体管管芯和所述多个电容器的封装外壳,并且RF输入引线和RF输出引线从该封装延伸。
14.权利要求13的方法,还包括将RF晶体管管芯安装在RF输入引线和RF输出引线之间的基底上。
15.权利要求10的方法,其中所述电容器块还包括公共电介质。
16.一种封装的RF晶体管器件,包括:
RF晶体管管芯,其包括多个RF晶体管单元,所述多个RF晶体管单元的每个包括控制端子和输出端子;
RF输入引线和RF输出引线;以及
匹配网络,其耦合在所述RF输入引线或所述RF输出引线与所述RF晶体管管芯之间,所述匹配网络包括多个电容器,其中所述多个电容器被提供为所述RF输入引线或所述RF输出引线与所述RF晶体管管芯之间的基底上的电容器块,其中所述电容器块包括公共地端子和多个分立输入端子,且其中电容器的分立输入端子耦合到所述多个RF晶体管单元中的相应晶体管单元的对应控制端子或输出端子。
17.权利要求16的封装的RF晶体管器件,其中所述匹配网络包括耦合在RF输出引线和RF晶体管管芯之间的输出匹配网络,且其中电容器的分立输入端子耦合到所述多个RF晶体管单元中的相应晶体管单元的对应输出端子。
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US11/767,172 US8330265B2 (en) | 2007-06-22 | 2007-06-22 | RF transistor packages with internal stability network and methods of forming RF transistor packages with internal stability networks |
PCT/US2008/006948 WO2009002392A2 (en) | 2007-06-22 | 2008-06-02 | Rf transistor packages with internal stability network and methods of forming rf transistor packages with internal stability networks |
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CN101785109A (zh) | 2010-07-21 |
US20080315393A1 (en) | 2008-12-25 |
JP5295232B2 (ja) | 2013-09-18 |
WO2009002392A3 (en) | 2009-02-19 |
KR101487046B1 (ko) | 2015-01-28 |
WO2009002392A2 (en) | 2008-12-31 |
EP2160761B1 (en) | 2019-12-04 |
KR20100032429A (ko) | 2010-03-25 |
US8330265B2 (en) | 2012-12-11 |
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