CN101762987B - 微光刻投射曝光设备的照明系统 - Google Patents
微光刻投射曝光设备的照明系统 Download PDFInfo
- Publication number
- CN101762987B CN101762987B CN200910262203.7A CN200910262203A CN101762987B CN 101762987 B CN101762987 B CN 101762987B CN 200910262203 A CN200910262203 A CN 200910262203A CN 101762987 B CN101762987 B CN 101762987B
- Authority
- CN
- China
- Prior art keywords
- illuminator
- light beam
- pupil surface
- light
- system pupil
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70208—Multiple illumination paths, e.g. radiation distribution devices, microlens illumination systems, multiplexers or demultiplexers for single or multiple projection systems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
- G03F7/70116—Off-axis setting using a programmable means, e.g. liquid crystal display [LCD], digital micromirror device [DMD] or pupil facets
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Microscoopes, Condenser (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP20080022311 EP2202580B1 (fr) | 2008-12-23 | 2008-12-23 | Système d'illumination d'un appareil d'exposition à projection micro-lithographique |
EP08022311.8 | 2008-12-23 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101762987A CN101762987A (zh) | 2010-06-30 |
CN101762987B true CN101762987B (zh) | 2014-12-31 |
Family
ID=40639761
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200910262203.7A Active CN101762987B (zh) | 2008-12-23 | 2009-12-22 | 微光刻投射曝光设备的照明系统 |
Country Status (5)
Country | Link |
---|---|
US (2) | US7782443B2 (fr) |
EP (2) | EP2202580B1 (fr) |
JP (1) | JP5599606B2 (fr) |
CN (1) | CN101762987B (fr) |
TW (1) | TWI485527B (fr) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5611443B2 (ja) * | 2010-12-28 | 2014-10-22 | カール・ツァイス・エスエムティー・ゲーエムベーハー | マイクロリソグラフィ投影露光装置の照明系 |
JP5868492B2 (ja) * | 2011-05-06 | 2016-02-24 | カール・ツァイス・エスエムティー・ゲーエムベーハー | マイクロリソグラフィ投影露光装置の照明系 |
WO2013115208A1 (fr) * | 2012-02-03 | 2013-08-08 | 株式会社ニコン | Système optique de transmission, système optique d'éclairage, dispositif d'exposition et procédé de fabrication d'un dispositif |
FR2996016B1 (fr) * | 2012-09-25 | 2014-09-19 | Sagem Defense Securite | Illuminateur de photolithographie telecentrique selon deux directions |
WO2014056513A1 (fr) * | 2012-10-08 | 2014-04-17 | Carl Zeiss Smt Gmbh | Système d'éclairage d'appareil d'exposition par projection microlithographique |
KR101992516B1 (ko) * | 2012-10-08 | 2019-06-24 | 칼 짜이스 에스엠티 게엠베하 | 마이크로리소그래피 장치의 작동 방법 |
DE102013202948A1 (de) * | 2013-02-22 | 2014-09-11 | Carl Zeiss Smt Gmbh | Beleuchtungssystem für eine EUV-Lithographievorrichtung und Facettenspiegel dafür |
DE102014203041A1 (de) | 2014-02-19 | 2015-08-20 | Carl Zeiss Smt Gmbh | Beleuchtungssystem einer mikrolithographischen Projektionsbelichtungsanlage und Verfahren zum Betreiben eines solchen |
DE102014203040A1 (de) * | 2014-02-19 | 2015-08-20 | Carl Zeiss Smt Gmbh | Beleuchtungssystem einer mikrolithographischen Projektionsbelichtungsanlage und Verfahren zum Betreiben eines solchen |
WO2016045945A1 (fr) * | 2014-09-26 | 2016-03-31 | Asml Netherlands B.V. | Appareil d'inspection et procédé de fabrication de dispositif |
CN109690402A (zh) * | 2016-07-21 | 2019-04-26 | 凸版印刷株式会社 | 光掩模、光掩模制造方法、以及使用光掩模的滤色器的制造方法 |
KR102384553B1 (ko) | 2017-03-23 | 2022-04-08 | 에이에스엠엘 네델란즈 비.브이. | 구조체의 비대칭 모니터링 |
JP7014226B2 (ja) * | 2017-05-01 | 2022-02-01 | 株式会社ニコン | 加工装置 |
WO2023117611A1 (fr) * | 2021-12-23 | 2023-06-29 | Asml Netherlands B.V. | Systèmes et procédés de génération de multiples points d'éclairage à partir d'une seule source d'éclairage |
Citations (5)
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EP1262836A1 (fr) * | 2001-06-01 | 2002-12-04 | Asml | Appareil lithographique |
CN1432142A (zh) * | 2000-06-27 | 2003-07-23 | 微激光系统公司 | 多光束图案生成器 |
CN1690792A (zh) * | 2004-04-22 | 2005-11-02 | 鸿富锦精密工业(深圳)有限公司 | 导光板网点制造装置 |
WO2008019860A1 (fr) * | 2006-08-16 | 2008-02-21 | Carl Zeiss Smt Ag | Système optique pour lithographie à semi-conducteur |
CN101135856A (zh) * | 2006-08-31 | 2008-03-05 | 中芯国际集成电路制造(上海)有限公司 | 激光直写装置及激光直写方法 |
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JPS6175523A (ja) * | 1984-09-21 | 1986-04-17 | Canon Inc | 光束インコヒ−レント化装置 |
JPH06204121A (ja) * | 1992-12-28 | 1994-07-22 | Canon Inc | 照明装置及びそれを用いた投影露光装置 |
JP3630807B2 (ja) * | 1994-12-28 | 2005-03-23 | キヤノン株式会社 | 走査露光装置及び当該走査露光装置を用いたデバイスの製造方法 |
US5870176A (en) * | 1996-06-19 | 1999-02-09 | Sandia Corporation | Maskless lithography |
SE9800665D0 (sv) * | 1998-03-02 | 1998-03-02 | Micronic Laser Systems Ab | Improved method for projection printing using a micromirror SLM |
JP2000223405A (ja) * | 1999-02-03 | 2000-08-11 | Nikon Corp | 照明光学装置および該照明光学装置を備えた投影露光装置 |
US6930754B1 (en) * | 1998-06-30 | 2005-08-16 | Canon Kabushiki Kaisha | Multiple exposure method |
JP2000277421A (ja) * | 1999-03-26 | 2000-10-06 | Nikon Corp | 照明装置 |
US6833908B2 (en) * | 2001-03-23 | 2004-12-21 | Ultratech, Inc. | Computer architecture for and method of high-resolution imaging using a low-resolution image transducer |
US6515257B1 (en) * | 2001-03-26 | 2003-02-04 | Anvik Corporation | High-speed maskless via generation system |
DE10124803A1 (de) | 2001-05-22 | 2002-11-28 | Zeiss Carl | Polarisator und Mikrolithographie-Projektionsanlage mit Polarisator |
JP2002353105A (ja) * | 2001-05-24 | 2002-12-06 | Nikon Corp | 照明光学装置,該照明光学装置を備えた露光装置,およびマイクロデバイスの製造方法 |
US6794100B2 (en) * | 2001-08-30 | 2004-09-21 | Micron Technology, Inc. | Method for controlling radiation beam intensity directed to microlithographic substrates |
JP4324957B2 (ja) | 2002-05-27 | 2009-09-02 | 株式会社ニコン | 照明光学装置、露光装置および露光方法 |
KR100480620B1 (ko) | 2002-09-19 | 2005-03-31 | 삼성전자주식회사 | 마이크로 미러 어레이를 구비한 노광 장치 및 이를 이용한노광 방법 |
US7180576B2 (en) * | 2003-02-11 | 2007-02-20 | Asml Netherlands B.V. | Exposure with intensity balancing to mimic complex illuminator shape |
EP1480080A1 (fr) * | 2003-05-22 | 2004-11-24 | ASML Netherlands B.V. | Appareil lithographique et méthode de fabrication d'un dispositif |
DE10327733C5 (de) | 2003-06-18 | 2012-04-19 | Limo Patentverwaltung Gmbh & Co. Kg | Vorrichtung zur Formung eines Lichtstrahls |
US7450307B2 (en) * | 2003-09-09 | 2008-11-11 | Semiconductor Energy Laboratory Co., Ltd. | Laser irradiation apparatus, laser irradiation method, and method for manufacturing semiconductor device |
JP4717813B2 (ja) * | 2003-09-12 | 2011-07-06 | カール・ツァイス・エスエムティー・ゲーエムベーハー | マイクロリソグラフィ投影露光設備のための照明系 |
WO2005040927A2 (fr) | 2003-10-18 | 2005-05-06 | Carl Zeiss Smt Ag | Dispositif permettant de regler une dose d'eclairage sur une couche photosensible, et procede de production microlithographique d'elements microstructures |
JP4846600B2 (ja) | 2004-02-17 | 2011-12-28 | カール・ツァイス・エスエムティー・ゲーエムベーハー | マイクロリソグラフィ投射露光装置用照射システム |
JP4497968B2 (ja) * | 2004-03-18 | 2010-07-07 | キヤノン株式会社 | 照明装置、露光装置及びデバイス製造方法 |
JP2006005319A (ja) * | 2004-06-21 | 2006-01-05 | Canon Inc | 照明光学系及び方法、露光装置及びデバイス製造方法 |
EP1621930A3 (fr) | 2004-07-29 | 2011-07-06 | Carl Zeiss SMT GmbH | Système d'illumination pour un appareil d'exposition par projection microlithographique |
US20060087634A1 (en) | 2004-10-25 | 2006-04-27 | Brown Jay M | Dynamic illumination uniformity and shape control for lithography |
JP2006196715A (ja) * | 2005-01-13 | 2006-07-27 | Nikon Corp | 光束変換素子、照明光学装置、露光装置、および露光方法 |
KR101134174B1 (ko) * | 2005-03-15 | 2012-04-09 | 칼 짜이스 에스엠티 게엠베하 | 투사 노광 방법 및 이를 위한 투사 노광 시스템 |
TWI545352B (zh) * | 2006-02-17 | 2016-08-11 | 卡爾蔡司Smt有限公司 | 用於微影投射曝光設備之照明系統 |
JP2007242775A (ja) * | 2006-03-07 | 2007-09-20 | Canon Inc | 露光装置及びデバイス製造方法 |
JP5158439B2 (ja) * | 2006-04-17 | 2013-03-06 | 株式会社ニコン | 照明光学装置、露光装置、およびデバイス製造方法 |
US8052289B2 (en) * | 2006-06-07 | 2011-11-08 | Asml Netherlands B.V. | Mirror array for lithography |
JP5345132B2 (ja) * | 2007-04-25 | 2013-11-20 | カール・ツァイス・エスエムティー・ゲーエムベーハー | マイクロリソグラフィ露光装置においてマスクを照明するための照明系 |
WO2009060744A1 (fr) | 2007-11-06 | 2009-05-14 | Nikon Corporation | Dispositif optique d'éclairage et dispositif d'exposition |
EP2219206A4 (fr) * | 2007-11-06 | 2011-04-27 | Nikon Corp | Dispositif de commande, procédé d'exposition et dispositif d'exposition |
CN103034075B (zh) | 2007-12-21 | 2015-07-08 | 卡尔蔡司Smt有限责任公司 | 微光刻投射曝光设备的照明系统 |
NL1036313A1 (nl) * | 2007-12-27 | 2009-06-30 | Asml Netherlands Bv | Device manufacturing method and lithographic apparatus. |
-
2008
- 2008-12-23 EP EP20080022311 patent/EP2202580B1/fr not_active Expired - Fee Related
- 2008-12-23 EP EP20110001162 patent/EP2317386B1/fr not_active Not-in-force
-
2009
- 2009-11-26 TW TW098140296A patent/TWI485527B/zh active
- 2009-12-22 JP JP2009299525A patent/JP5599606B2/ja active Active
- 2009-12-22 CN CN200910262203.7A patent/CN101762987B/zh active Active
- 2009-12-23 US US12/646,021 patent/US7782443B2/en active Active
-
2010
- 2010-07-14 US US12/836,436 patent/US9013680B2/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1432142A (zh) * | 2000-06-27 | 2003-07-23 | 微激光系统公司 | 多光束图案生成器 |
EP1262836A1 (fr) * | 2001-06-01 | 2002-12-04 | Asml | Appareil lithographique |
CN1690792A (zh) * | 2004-04-22 | 2005-11-02 | 鸿富锦精密工业(深圳)有限公司 | 导光板网点制造装置 |
WO2008019860A1 (fr) * | 2006-08-16 | 2008-02-21 | Carl Zeiss Smt Ag | Système optique pour lithographie à semi-conducteur |
CN101135856A (zh) * | 2006-08-31 | 2008-03-05 | 中芯国际集成电路制造(上海)有限公司 | 激光直写装置及激光直写方法 |
Also Published As
Publication number | Publication date |
---|---|
US20100277708A1 (en) | 2010-11-04 |
TWI485527B (zh) | 2015-05-21 |
US7782443B2 (en) | 2010-08-24 |
TW201027273A (en) | 2010-07-16 |
EP2317386A2 (fr) | 2011-05-04 |
CN101762987A (zh) | 2010-06-30 |
JP5599606B2 (ja) | 2014-10-01 |
EP2202580B1 (fr) | 2011-06-22 |
US20100157268A1 (en) | 2010-06-24 |
EP2202580A1 (fr) | 2010-06-30 |
EP2317386A3 (fr) | 2011-06-01 |
EP2317386B1 (fr) | 2012-07-11 |
US9013680B2 (en) | 2015-04-21 |
JP2010153875A (ja) | 2010-07-08 |
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