CN101749949A - 循环式基板烧成炉 - Google Patents
循环式基板烧成炉 Download PDFInfo
- Publication number
- CN101749949A CN101749949A CN200910132281A CN200910132281A CN101749949A CN 101749949 A CN101749949 A CN 101749949A CN 200910132281 A CN200910132281 A CN 200910132281A CN 200910132281 A CN200910132281 A CN 200910132281A CN 101749949 A CN101749949 A CN 101749949A
- Authority
- CN
- China
- Prior art keywords
- hot blast
- catalyst
- firing furnace
- heater
- main part
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 80
- 238000010304 firing Methods 0.000 title claims abstract description 79
- 239000003054 catalyst Substances 0.000 claims abstract description 145
- 238000001179 sorption measurement Methods 0.000 claims abstract description 51
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims description 100
- 229910002092 carbon dioxide Inorganic materials 0.000 claims description 50
- 239000001569 carbon dioxide Substances 0.000 claims description 50
- 238000010521 absorption reaction Methods 0.000 claims description 31
- 239000011358 absorbing material Substances 0.000 claims description 19
- 238000007599 discharging Methods 0.000 claims description 11
- 238000011084 recovery Methods 0.000 claims description 5
- 238000005245 sintering Methods 0.000 abstract description 32
- 239000011521 glass Substances 0.000 abstract description 25
- 238000010438 heat treatment Methods 0.000 abstract description 8
- 238000001914 filtration Methods 0.000 abstract description 3
- 150000002894 organic compounds Chemical class 0.000 abstract 2
- 238000007664 blowing Methods 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 24
- 239000005416 organic matter Substances 0.000 description 18
- 238000000354 decomposition reaction Methods 0.000 description 17
- 239000000463 material Substances 0.000 description 17
- 230000008929 regeneration Effects 0.000 description 17
- 238000011069 regeneration method Methods 0.000 description 17
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 13
- 230000009471 action Effects 0.000 description 9
- 239000003463 adsorbent Substances 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 230000007246 mechanism Effects 0.000 description 7
- 230000003647 oxidation Effects 0.000 description 7
- 238000007254 oxidation reaction Methods 0.000 description 7
- 238000004140 cleaning Methods 0.000 description 6
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 6
- 230000006870 function Effects 0.000 description 5
- 238000012423 maintenance Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 239000000047 product Substances 0.000 description 5
- PAZHGORSDKKUPI-UHFFFAOYSA-N lithium metasilicate Chemical compound [Li+].[Li+].[O-][Si]([O-])=O PAZHGORSDKKUPI-UHFFFAOYSA-N 0.000 description 4
- 229910052912 lithium silicate Inorganic materials 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 238000005979 thermal decomposition reaction Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 3
- 230000008676 import Effects 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 239000003960 organic solvent Substances 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 229910021536 Zeolite Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- HNPSIPDUKPIQMN-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Al]O[Al]=O HNPSIPDUKPIQMN-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000012467 final product Substances 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- PXXKQOPKNFECSZ-UHFFFAOYSA-N platinum rhodium Chemical compound [Rh].[Pt] PXXKQOPKNFECSZ-UHFFFAOYSA-N 0.000 description 2
- 238000004064 recycling Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910002027 silica gel Inorganic materials 0.000 description 2
- 239000000741 silica gel Substances 0.000 description 2
- 238000011144 upstream manufacturing Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 239000010457 zeolite Substances 0.000 description 2
- 229910004283 SiO 4 Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 125000004122 cyclic group Chemical class 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011146 organic particle Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
- F27B17/00—Furnaces of a kind not covered by any preceding group
- F27B17/0016—Chamber type furnaces
- F27B17/0025—Especially adapted for treating semiconductor wafers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Waste-Gas Treatment And Other Accessory Devices For Furnaces (AREA)
- Exhaust Gas Treatment By Means Of Catalyst (AREA)
- Furnace Details (AREA)
- Catalysts (AREA)
Abstract
Description
Claims (10)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008319199A JP2010144939A (ja) | 2008-12-16 | 2008-12-16 | 循環式の基板焼成炉 |
JP2008-319199 | 2008-12-16 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN101749949A true CN101749949A (zh) | 2010-06-23 |
Family
ID=42367616
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200910132281A Pending CN101749949A (zh) | 2008-12-16 | 2009-04-30 | 循环式基板烧成炉 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP2010144939A (zh) |
KR (1) | KR20100069542A (zh) |
CN (1) | CN101749949A (zh) |
TW (1) | TW201025422A (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104685312A (zh) * | 2012-10-03 | 2015-06-03 | 夏普株式会社 | 基板烧成装置 |
CN107305097A (zh) * | 2017-05-03 | 2017-10-31 | 上海柘电电器有限公司 | 设有热风循环系统的凝胶炉 |
WO2020143068A1 (en) * | 2019-01-10 | 2020-07-16 | China Energy Investment Corporation Limited | System and method for co2 capture from a fleet of co2 producing assets |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6334221B2 (ja) * | 2014-03-25 | 2018-05-30 | 新コスモス電機株式会社 | ガス検知器 |
WO2018193646A1 (ja) * | 2017-04-20 | 2018-10-25 | 中外炉工業株式会社 | クリーンオーブン |
JP6556288B2 (ja) * | 2018-04-24 | 2019-08-07 | 新コスモス電機株式会社 | ガス検知器 |
KR102680187B1 (ko) * | 2018-09-27 | 2024-06-28 | 주식회사 엘지화학 | 세라믹 지지체의 제조 방법 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000040470A (ja) * | 1998-07-23 | 2000-02-08 | Chugai Ro Co Ltd | プラズマディスプレイパネル用ガラス基板の焼成方法 |
JP2005032469A (ja) * | 2003-07-08 | 2005-02-03 | Matsushita Electric Ind Co Ltd | 表示パネルの製造方法および製造装置 |
JP4630307B2 (ja) * | 2007-05-22 | 2011-02-09 | エスペック株式会社 | 熱処理装置 |
JP4589941B2 (ja) * | 2007-05-29 | 2010-12-01 | エスペック株式会社 | 熱処理装置 |
-
2008
- 2008-12-16 JP JP2008319199A patent/JP2010144939A/ja active Pending
-
2009
- 2009-04-02 TW TW098111052A patent/TW201025422A/zh unknown
- 2009-04-30 CN CN200910132281A patent/CN101749949A/zh active Pending
- 2009-05-22 KR KR1020090045031A patent/KR20100069542A/ko not_active Application Discontinuation
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104685312A (zh) * | 2012-10-03 | 2015-06-03 | 夏普株式会社 | 基板烧成装置 |
CN104685312B (zh) * | 2012-10-03 | 2016-12-28 | 夏普株式会社 | 基板烧成装置 |
CN107305097A (zh) * | 2017-05-03 | 2017-10-31 | 上海柘电电器有限公司 | 设有热风循环系统的凝胶炉 |
WO2020143068A1 (en) * | 2019-01-10 | 2020-07-16 | China Energy Investment Corporation Limited | System and method for co2 capture from a fleet of co2 producing assets |
GB2594178A (en) * | 2019-01-10 | 2021-10-20 | China Energy Investment Corp Ltd | System and method for CO2 capture from a fleet of CO2 producing assets |
GB2594178B (en) * | 2019-01-10 | 2023-06-14 | China Energy Investment Corp Ltd | System and method for CO2 capture from a fleet of CO2 producing assets |
Also Published As
Publication number | Publication date |
---|---|
KR20100069542A (ko) | 2010-06-24 |
JP2010144939A (ja) | 2010-07-01 |
TW201025422A (en) | 2010-07-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: FUTURE VISION KK Free format text: FORMER OWNER: TOKOKU UNIV. Effective date: 20101122 Free format text: FORMER OWNER: FUTURE VISION KK |
|
C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: SENDAI CITY, MIYAGI, JAPAN TO: TOKYO, JAPAN |
|
TA01 | Transfer of patent application right |
Effective date of registration: 20101122 Address after: Tokyo, Japan, Japan Applicant after: Future Vision KK Address before: Sendai City, Miyagi Prefecture, Japan Applicant before: Tokoku University of National University Corp. Co-applicant before: Future Vision KK |
|
C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
WD01 | Invention patent application deemed withdrawn after publication |
Open date: 20100623 |