CN101711437B - 电子器件用的杂芘-基半导体材料 - Google Patents

电子器件用的杂芘-基半导体材料 Download PDF

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Publication number
CN101711437B
CN101711437B CN200880022106.4A CN200880022106A CN101711437B CN 101711437 B CN101711437 B CN 101711437B CN 200880022106 A CN200880022106 A CN 200880022106A CN 101711437 B CN101711437 B CN 101711437B
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China
Prior art keywords
substituents
thin film
gate
article
organic
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Expired - Fee Related
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CN200880022106.4A
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English (en)
Chinese (zh)
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CN101711437A (zh
Inventor
D·方可拉
T·R·威尔特
A·L·卡洛李
W·G·艾恩
D·R·罗贝洛
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Eastman Kodak Co
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Eastman Kodak Co
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Publication of CN101711437A publication Critical patent/CN101711437A/zh
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Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6576—Polycyclic condensed heteroaromatic hydrocarbons comprising only sulfur in the heteroaromatic polycondensed ring system, e.g. benzothiophene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6574—Polycyclic condensed heteroaromatic hydrocarbons comprising only oxygen in the heteroaromatic polycondensed ring system, e.g. cumarine dyes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/464—Lateral top-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Heterocyclic Carbon Compounds Containing A Hetero Ring Having Oxygen Or Sulfur (AREA)
CN200880022106.4A 2007-06-26 2008-06-13 电子器件用的杂芘-基半导体材料 Expired - Fee Related CN101711437B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/768,262 US7781076B2 (en) 2007-06-26 2007-06-26 Heteropyrene-based semiconductor materials for electronic devices and methods of making the same
US11/768,262 2007-06-26
PCT/US2008/007386 WO2009002405A1 (en) 2007-06-26 2008-06-13 Heteropyrene-based semiconductor materials for electronic devices

Publications (2)

Publication Number Publication Date
CN101711437A CN101711437A (zh) 2010-05-19
CN101711437B true CN101711437B (zh) 2012-03-14

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CN200880022106.4A Expired - Fee Related CN101711437B (zh) 2007-06-26 2008-06-13 电子器件用的杂芘-基半导体材料

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Country Link
US (1) US7781076B2 (enExample)
EP (1) EP2160775B1 (enExample)
JP (1) JP2010531551A (enExample)
CN (1) CN101711437B (enExample)
TW (1) TW200909424A (enExample)
WO (1) WO2009002405A1 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7914755B2 (en) 2001-04-12 2011-03-29 Eestor, Inc. Method of preparing ceramic powders using chelate precursors
US8853116B2 (en) 2006-08-02 2014-10-07 Eestor, Inc. Method of preparing ceramic powders
US7993611B2 (en) 2006-08-02 2011-08-09 Eestor, Inc. Method of preparing ceramic powders using ammonium oxalate
JP5436812B2 (ja) * 2008-07-31 2014-03-05 山本化成株式会社 有機トランジスタ
JP5574661B2 (ja) * 2008-10-02 2014-08-20 山本化成株式会社 有機トランジスタ
JP4844767B2 (ja) * 2008-10-03 2011-12-28 ソニー株式会社 薄膜トランジスタ、薄膜トランジスタの製造方法、および電子機器
US20100285316A1 (en) * 2009-02-27 2010-11-11 Eestor, Inc. Method of Preparing Ceramic Powders
JP5634751B2 (ja) * 2010-05-26 2014-12-03 山本化成株式会社 有機トランジスタ
EP2769422B9 (en) * 2011-10-18 2017-03-22 École Polytechnique Fédérale de Lausanne (EPFL) Compounds for electrochemical and/or optoelectronic devices
US8692238B2 (en) 2012-04-25 2014-04-08 Eastman Kodak Company Semiconductor devices and methods of preparation
US8779415B2 (en) 2012-11-08 2014-07-15 Eastman Kodak Company Devices containing organic polymeric multi-metallic composites
WO2015191293A1 (en) 2014-06-11 2015-12-17 Eastman Kodak Company Devices having dielectric layers with thiosulfate-containing polymers
EP3208863B1 (en) 2016-02-22 2019-10-23 Novaled GmbH Charge transporting semi-conducting material and electronic device comprising it

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1738887A (zh) * 2003-01-17 2006-02-22 日本化药株式会社 发光元件、其中使用的稠多环类化合物及其制造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6356495A (ja) * 1986-08-27 1988-03-11 Kao Corp 光学的情報記録媒体
US6300612B1 (en) * 1998-02-02 2001-10-09 Uniax Corporation Image sensors made from organic semiconductors
JP4057215B2 (ja) * 2000-03-07 2008-03-05 三菱電機株式会社 半導体装置の製造方法および液晶表示装置の製造方法
US6740900B2 (en) * 2002-02-27 2004-05-25 Konica Corporation Organic thin-film transistor and manufacturing method for the same
JP4606328B2 (ja) 2003-01-17 2011-01-05 日本化薬株式会社 発光素子、それに用いる縮合多環系化合物及びその製造方法
JP2006176494A (ja) 2004-11-25 2006-07-06 Kyoto Univ ピレン系化合物及びこれを用いた発光トランジスタ素子及びエレクトロルミネッセンス素子
EP2005497B1 (en) 2006-04-13 2014-10-08 Basf Se Quinoid systems as organic semiconductors
JP5097407B2 (ja) * 2007-01-24 2012-12-12 山本化成株式会社 有機トランジスタ

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1738887A (zh) * 2003-01-17 2006-02-22 日本化药株式会社 发光元件、其中使用的稠多环类化合物及其制造方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
TYSON D S.Synthesis, characterization, and optical properties of a cyano-functionalized 2,3,7,8-tetraaryl-1,6-dioxapyrene.《Journal of Photochemistry and Photobiology A: Chemistry》.2005,第172卷(第1期), *

Also Published As

Publication number Publication date
CN101711437A (zh) 2010-05-19
EP2160775B1 (en) 2012-10-31
TW200909424A (en) 2009-03-01
JP2010531551A (ja) 2010-09-24
US7781076B2 (en) 2010-08-24
EP2160775A1 (en) 2010-03-10
WO2009002405A1 (en) 2008-12-31
US20090001353A1 (en) 2009-01-01

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