TW200909424A - Heteropyrene-based semiconductor materials for electronic devices - Google Patents

Heteropyrene-based semiconductor materials for electronic devices Download PDF

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Publication number
TW200909424A
TW200909424A TW097123749A TW97123749A TW200909424A TW 200909424 A TW200909424 A TW 200909424A TW 097123749 A TW097123749 A TW 097123749A TW 97123749 A TW97123749 A TW 97123749A TW 200909424 A TW200909424 A TW 200909424A
Authority
TW
Taiwan
Prior art keywords
group
compound
electrode
substituents
article
Prior art date
Application number
TW097123749A
Other languages
English (en)
Chinese (zh)
Inventor
Deepak Shukla
Thomas R Welter
Ann L Carroll-Lee
Wendy G Ahearn
Douglas R Robello
Original Assignee
Eastman Kodak Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Eastman Kodak Co filed Critical Eastman Kodak Co
Publication of TW200909424A publication Critical patent/TW200909424A/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6576—Polycyclic condensed heteroaromatic hydrocarbons comprising only sulfur in the heteroaromatic polycondensed ring system, e.g. benzothiophene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6574—Polycyclic condensed heteroaromatic hydrocarbons comprising only oxygen in the heteroaromatic polycondensed ring system, e.g. cumarine dyes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/464—Lateral top-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Heterocyclic Carbon Compounds Containing A Hetero Ring Having Oxygen Or Sulfur (AREA)
TW097123749A 2007-06-26 2008-06-25 Heteropyrene-based semiconductor materials for electronic devices TW200909424A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/768,262 US7781076B2 (en) 2007-06-26 2007-06-26 Heteropyrene-based semiconductor materials for electronic devices and methods of making the same

Publications (1)

Publication Number Publication Date
TW200909424A true TW200909424A (en) 2009-03-01

Family

ID=39730785

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097123749A TW200909424A (en) 2007-06-26 2008-06-25 Heteropyrene-based semiconductor materials for electronic devices

Country Status (6)

Country Link
US (1) US7781076B2 (enExample)
EP (1) EP2160775B1 (enExample)
JP (1) JP2010531551A (enExample)
CN (1) CN101711437B (enExample)
TW (1) TW200909424A (enExample)
WO (1) WO2009002405A1 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7914755B2 (en) 2001-04-12 2011-03-29 Eestor, Inc. Method of preparing ceramic powders using chelate precursors
US7993611B2 (en) 2006-08-02 2011-08-09 Eestor, Inc. Method of preparing ceramic powders using ammonium oxalate
US8853116B2 (en) 2006-08-02 2014-10-07 Eestor, Inc. Method of preparing ceramic powders
JP5436812B2 (ja) * 2008-07-31 2014-03-05 山本化成株式会社 有機トランジスタ
JP5574661B2 (ja) * 2008-10-02 2014-08-20 山本化成株式会社 有機トランジスタ
JP4844767B2 (ja) * 2008-10-03 2011-12-28 ソニー株式会社 薄膜トランジスタ、薄膜トランジスタの製造方法、および電子機器
US20100285316A1 (en) * 2009-02-27 2010-11-11 Eestor, Inc. Method of Preparing Ceramic Powders
JP5634751B2 (ja) * 2010-05-26 2014-12-03 山本化成株式会社 有機トランジスタ
JP6224600B2 (ja) * 2011-10-18 2017-11-01 エコール ポリテクニーク フェデラル ドゥ ローザンヌ（エーペーエフエル） 電気化学および／または光電子デバイス用化合物
US8692238B2 (en) 2012-04-25 2014-04-08 Eastman Kodak Company Semiconductor devices and methods of preparation
US8779415B2 (en) 2012-11-08 2014-07-15 Eastman Kodak Company Devices containing organic polymeric multi-metallic composites
EP3155623B1 (en) 2014-06-11 2019-05-08 Eastman Kodak Company Devices having dielectric layers with thiosulfate-containing polymers
EP3208863B1 (en) * 2016-02-22 2019-10-23 Novaled GmbH Charge transporting semi-conducting material and electronic device comprising it

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6356495A (ja) * 1986-08-27 1988-03-11 Kao Corp 光学的情報記録媒体
CN1181569C (zh) * 1998-02-02 2004-12-22 杜邦显示器股份有限公司 有机半导体图像传感器
JP4057215B2 (ja) * 2000-03-07 2008-03-05 三菱電機株式会社 半導体装置の製造方法および液晶表示装置の製造方法
US6740900B2 (en) * 2002-02-27 2004-05-25 Konica Corporation Organic thin-film transistor and manufacturing method for the same
CN100366623C (zh) * 2003-01-17 2008-02-06 日本化药株式会社 发光元件、其中使用的稠多环类化合物及其制造方法
WO2004065520A1 (ja) 2003-01-17 2004-08-05 Nippon Kayaku Kabushiki Kaisha 発光素子、それに用いる縮合多環系化合物及びその製造方法
JP2006176494A (ja) 2004-11-25 2006-07-06 Kyoto Univ ピレン系化合物及びこれを用いた発光トランジスタ素子及びエレクトロルミネッセンス素子
WO2007118799A1 (en) 2006-04-13 2007-10-25 Ciba Holding Inc. Quinoid systems as organic semiconductors
JP5097407B2 (ja) * 2007-01-24 2012-12-12 山本化成株式会社 有機トランジスタ

Also Published As

Publication number Publication date
WO2009002405A1 (en) 2008-12-31
US7781076B2 (en) 2010-08-24
JP2010531551A (ja) 2010-09-24
US20090001353A1 (en) 2009-01-01
EP2160775A1 (en) 2010-03-10
CN101711437B (zh) 2012-03-14
EP2160775B1 (en) 2012-10-31
CN101711437A (zh) 2010-05-19

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