CN101689494A - 金属膜用研磨液及研磨方法 - Google Patents
金属膜用研磨液及研磨方法 Download PDFInfo
- Publication number
- CN101689494A CN101689494A CN200880023332A CN200880023332A CN101689494A CN 101689494 A CN101689494 A CN 101689494A CN 200880023332 A CN200880023332 A CN 200880023332A CN 200880023332 A CN200880023332 A CN 200880023332A CN 101689494 A CN101689494 A CN 101689494A
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- CN
- China
- Prior art keywords
- metal film
- lapping liquid
- metal
- grinding
- interlayer dielectric
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/7684—Smoothing; Planarisation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F3/00—Brightening metals by chemical means
- C23F3/04—Heavy metals
- C23F3/06—Heavy metals with acidic solutions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F3/00—Brightening metals by chemical means
- C23F3/04—Heavy metals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76819—Smoothing of the dielectric
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
Description
Claims (12)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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JP177182/2007 | 2007-07-05 | ||
JP2007177182 | 2007-07-05 | ||
PCT/JP2008/062159 WO2009005143A1 (ja) | 2007-07-05 | 2008-07-04 | 金属膜用研磨液及び研磨方法 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201110208059.6A Division CN102352187B (zh) | 2007-07-05 | 2008-07-04 | 金属膜用研磨液及研磨方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101689494A true CN101689494A (zh) | 2010-03-31 |
CN101689494B CN101689494B (zh) | 2013-09-25 |
Family
ID=40226181
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201110208059.6A Expired - Fee Related CN102352187B (zh) | 2007-07-05 | 2008-07-04 | 金属膜用研磨液及研磨方法 |
CN2008800233324A Active CN101689494B (zh) | 2007-07-05 | 2008-07-04 | 金属膜用研磨液及研磨方法 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201110208059.6A Expired - Fee Related CN102352187B (zh) | 2007-07-05 | 2008-07-04 | 金属膜用研磨液及研磨方法 |
Country Status (7)
Country | Link |
---|---|
US (2) | US8609541B2 (zh) |
JP (3) | JP5287720B2 (zh) |
KR (2) | KR101318102B1 (zh) |
CN (2) | CN102352187B (zh) |
SG (1) | SG182993A1 (zh) |
TW (2) | TWI525680B (zh) |
WO (1) | WO2009005143A1 (zh) |
Cited By (6)
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CN103155112A (zh) * | 2010-12-24 | 2013-06-12 | 日立化成株式会社 | 研磨液及使用该研磨液的基板的研磨方法 |
CN104371551A (zh) * | 2013-08-14 | 2015-02-25 | 安集微电子(上海)有限公司 | 一种碱性阻挡层化学机械抛光液 |
CN105048103A (zh) * | 2015-06-25 | 2015-11-11 | 电子科技大学 | 一种用于吸收太赫兹波的超薄金属膜的制备方法 |
CN105313001A (zh) * | 2014-07-28 | 2016-02-10 | 罗门哈斯电子材料Cmp控股股份有限公司 | 用于化学机械抛光含有钌和铜的衬底的方法 |
CN106574170A (zh) * | 2014-08-07 | 2017-04-19 | 福吉米株式会社 | 钛合金材料研磨用组合物 |
CN107949615A (zh) * | 2015-09-09 | 2018-04-20 | 日立化成株式会社 | 研磨液、研磨液套剂和基体的研磨方法 |
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TWI525680B (zh) * | 2007-07-05 | 2016-03-11 | 日立化成股份有限公司 | 金屬膜用硏磨液以及硏磨方法 |
JP5769284B2 (ja) * | 2009-01-20 | 2015-08-26 | 花王株式会社 | 磁気ディスク基板用研磨液組成物 |
WO2011030706A1 (ja) * | 2009-09-08 | 2011-03-17 | 東亞合成株式会社 | シリカ粒子又はセリア粒子用分散剤及び研磨剤 |
JP5621242B2 (ja) * | 2009-11-09 | 2014-11-12 | 東亞合成株式会社 | アルミナ粒子用分散剤 |
CN103596727A (zh) * | 2011-06-08 | 2014-02-19 | 福吉米株式会社 | 研磨材料和研磨用组合物 |
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WO2013137220A1 (ja) | 2012-03-14 | 2013-09-19 | 日立化成株式会社 | 研磨方法 |
KR20150014924A (ko) * | 2012-04-18 | 2015-02-09 | 가부시키가이샤 후지미인코퍼레이티드 | 연마용 조성물 |
US9303187B2 (en) * | 2013-07-22 | 2016-04-05 | Cabot Microelectronics Corporation | Compositions and methods for CMP of silicon oxide, silicon nitride, and polysilicon materials |
JP2017048256A (ja) * | 2014-01-16 | 2017-03-09 | 日立化成株式会社 | 研磨液の製造方法及び研磨方法 |
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JP6592998B2 (ja) * | 2015-07-10 | 2019-10-23 | 日立化成株式会社 | タングステン用研磨剤、研磨剤用貯蔵液及び研磨方法 |
TWI601198B (zh) * | 2016-03-01 | 2017-10-01 | 羅門哈斯電子材料Cmp控股公司 | 化學機械研磨基板之方法 |
WO2017147768A1 (en) | 2016-03-01 | 2017-09-08 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Method of chemical mechanical polishing a substrate |
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JP2000340532A (ja) * | 1999-05-31 | 2000-12-08 | Mitsubishi Materials Corp | 研磨用スラリー及びこれを用いた研磨方法 |
TW501197B (en) * | 1999-08-17 | 2002-09-01 | Hitachi Chemical Co Ltd | Polishing compound for chemical mechanical polishing and method for polishing substrate |
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JP2002184727A (ja) * | 2001-10-15 | 2002-06-28 | Hitachi Chem Co Ltd | 金属用研磨液及びそれを用いた基板の研磨方法 |
WO2003038883A1 (fr) * | 2001-10-31 | 2003-05-08 | Hitachi Chemical Co., Ltd. | Fluide et procede de polissage |
TWI282360B (en) * | 2002-06-03 | 2007-06-11 | Hitachi Chemical Co Ltd | Polishing composition and polishing method thereof |
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JP2005064285A (ja) * | 2003-08-14 | 2005-03-10 | Hitachi Chem Co Ltd | Cmp用研磨液及び研磨方法 |
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JP4342918B2 (ja) * | 2003-11-28 | 2009-10-14 | 株式会社東芝 | 研磨布および半導体装置の製造方法 |
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JP2007165566A (ja) * | 2005-12-13 | 2007-06-28 | Fujifilm Corp | 金属用研磨液及び研磨方法 |
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US20080105652A1 (en) * | 2006-11-02 | 2008-05-08 | Cabot Microelectronics Corporation | CMP of copper/ruthenium/tantalum substrates |
TWI525680B (zh) * | 2007-07-05 | 2016-03-11 | 日立化成股份有限公司 | 金屬膜用硏磨液以及硏磨方法 |
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-
2008
- 2008-07-04 TW TW102140469A patent/TWI525680B/zh active
- 2008-07-04 JP JP2009521676A patent/JP5287720B2/ja active Active
- 2008-07-04 WO PCT/JP2008/062159 patent/WO2009005143A1/ja active Application Filing
- 2008-07-04 CN CN201110208059.6A patent/CN102352187B/zh not_active Expired - Fee Related
- 2008-07-04 KR KR1020107000003A patent/KR101318102B1/ko active IP Right Grant
- 2008-07-04 KR KR1020137013121A patent/KR101396055B1/ko active IP Right Grant
- 2008-07-04 SG SG2012049425A patent/SG182993A1/en unknown
- 2008-07-04 CN CN2008800233324A patent/CN101689494B/zh active Active
- 2008-07-04 US US12/667,154 patent/US8609541B2/en active Active
- 2008-07-04 TW TW097125220A patent/TWI419218B/zh active
-
2012
- 2012-10-18 JP JP2012230493A patent/JP5626307B2/ja active Active
-
2013
- 2013-11-13 US US14/079,152 patent/US8901002B2/en active Active
-
2014
- 2014-03-10 JP JP2014046742A patent/JP5741738B2/ja active Active
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
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CN103155112A (zh) * | 2010-12-24 | 2013-06-12 | 日立化成株式会社 | 研磨液及使用该研磨液的基板的研磨方法 |
CN103155112B (zh) * | 2010-12-24 | 2016-10-12 | 日立化成株式会社 | 研磨液及使用该研磨液的基板的研磨方法 |
US9564337B2 (en) | 2010-12-24 | 2017-02-07 | Hitachi Chemical Co., Ltd. | Polishing liquid and method for polishing substrate using the polishing liquid |
CN104371551A (zh) * | 2013-08-14 | 2015-02-25 | 安集微电子(上海)有限公司 | 一种碱性阻挡层化学机械抛光液 |
CN104371551B (zh) * | 2013-08-14 | 2018-01-12 | 安集微电子(上海)有限公司 | 一种碱性阻挡层化学机械抛光液 |
CN105313001A (zh) * | 2014-07-28 | 2016-02-10 | 罗门哈斯电子材料Cmp控股股份有限公司 | 用于化学机械抛光含有钌和铜的衬底的方法 |
TWI573848B (zh) * | 2014-07-28 | 2017-03-11 | 羅門哈斯電子材料Cmp控股公司 | 含有釕及銅之基板之化學機械硏磨方法 |
CN105313001B (zh) * | 2014-07-28 | 2018-12-07 | 罗门哈斯电子材料Cmp控股股份有限公司 | 用于化学机械抛光含有钌和铜的衬底的方法 |
CN106574170A (zh) * | 2014-08-07 | 2017-04-19 | 福吉米株式会社 | 钛合金材料研磨用组合物 |
CN105048103A (zh) * | 2015-06-25 | 2015-11-11 | 电子科技大学 | 一种用于吸收太赫兹波的超薄金属膜的制备方法 |
CN107949615A (zh) * | 2015-09-09 | 2018-04-20 | 日立化成株式会社 | 研磨液、研磨液套剂和基体的研磨方法 |
CN107949615B (zh) * | 2015-09-09 | 2023-08-04 | 株式会社力森诺科 | 研磨液、研磨液套剂和基体的研磨方法 |
Also Published As
Publication number | Publication date |
---|---|
US8901002B2 (en) | 2014-12-02 |
TW200913039A (en) | 2009-03-16 |
CN102352187A (zh) | 2012-02-15 |
TW201419395A (zh) | 2014-05-16 |
KR20100031530A (ko) | 2010-03-22 |
JP5741738B2 (ja) | 2015-07-01 |
TWI525680B (zh) | 2016-03-11 |
WO2009005143A1 (ja) | 2009-01-08 |
KR101318102B1 (ko) | 2013-10-15 |
CN102352187B (zh) | 2015-03-18 |
KR101396055B1 (ko) | 2014-05-15 |
JP2013062516A (ja) | 2013-04-04 |
JP5626307B2 (ja) | 2014-11-19 |
US20110009033A1 (en) | 2011-01-13 |
KR20130060375A (ko) | 2013-06-07 |
CN101689494B (zh) | 2013-09-25 |
US20140065826A1 (en) | 2014-03-06 |
JP5287720B2 (ja) | 2013-09-11 |
US8609541B2 (en) | 2013-12-17 |
TWI419218B (zh) | 2013-12-11 |
SG182993A1 (en) | 2012-08-30 |
JP2014160827A (ja) | 2014-09-04 |
JPWO2009005143A1 (ja) | 2010-08-26 |
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