CN101689488B - 具有电子生成与聚焦沟的阴极、离子源及其方法 - Google Patents

具有电子生成与聚焦沟的阴极、离子源及其方法 Download PDF

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Publication number
CN101689488B
CN101689488B CN2008800217158A CN200880021715A CN101689488B CN 101689488 B CN101689488 B CN 101689488B CN 2008800217158 A CN2008800217158 A CN 2008800217158A CN 200880021715 A CN200880021715 A CN 200880021715A CN 101689488 B CN101689488 B CN 101689488B
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China
Prior art keywords
working surface
ion
focusing
negative electrode
electronics
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CN2008800217158A
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English (en)
Chinese (zh)
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CN101689488A (zh
Inventor
奈尔·J·巴森
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Varian Semiconductor Equipment Associates Inc
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Varian Semiconductor Equipment Associates Inc
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Publication of CN101689488A publication Critical patent/CN101689488A/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00—Ion beam tubes
    • H01J27/02—Ion sources; Ion guns
    • H01J27/20—Ion sources; Ion guns using particle beam bombardment, e.g. ionisers
    • H01J27/205—Ion sources; Ion guns using particle beam bombardment, e.g. ionisers with electrons, e.g. electron impact ionisation, electron attachment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/061—Construction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/08—Ion sources
    • H01J2237/0815—Methods of ionisation
    • H01J2237/082—Electron beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Combustion & Propulsion (AREA)
  • Analytical Chemistry (AREA)
  • Electron Sources, Ion Sources (AREA)
CN2008800217158A 2007-06-26 2008-06-09 具有电子生成与聚焦沟的阴极、离子源及其方法 Active CN101689488B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/768,242 US7723699B2 (en) 2007-06-26 2007-06-26 Cathode having electron production and focusing grooves, ion source and related method
US11/768,242 2007-06-26
PCT/US2008/066312 WO2009002692A2 (en) 2007-06-26 2008-06-09 Cathode having electron production and focusing grooves, ion source and related method

Publications (2)

Publication Number Publication Date
CN101689488A CN101689488A (zh) 2010-03-31
CN101689488B true CN101689488B (zh) 2012-05-30

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ID=40159236

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2008800217158A Active CN101689488B (zh) 2007-06-26 2008-06-09 具有电子生成与聚焦沟的阴极、离子源及其方法

Country Status (6)

Country Link
US (2) US7723699B2 (enExample)
JP (1) JP5481375B2 (enExample)
KR (1) KR101460053B1 (enExample)
CN (1) CN101689488B (enExample)
TW (1) TWI441228B (enExample)
WO (1) WO2009002692A2 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7723699B2 (en) * 2007-06-26 2010-05-25 Varian Semiconductor Equipment Associates, Inc. Cathode having electron production and focusing grooves, ion source and related method
JP5363413B2 (ja) * 2010-05-10 2013-12-11 電気化学工業株式会社 電子源
JP6100619B2 (ja) * 2013-06-04 2017-03-22 株式会社日立ハイテクノロジーズ イオン源およびイオンミリング装置
US9818570B2 (en) * 2015-10-23 2017-11-14 Varian Semiconductor Equipment Associates, Inc. Ion source for multiple charged species
CN106449386A (zh) * 2016-09-26 2017-02-22 中国电子科技集团公司第四十八研究所 一种用于SiC晶片掺杂的离子注入方法及装置
US11462386B2 (en) * 2018-12-17 2022-10-04 Applied Materials, Inc. Electron beam apparatus for optical device fabrication
WO2025243543A1 (ja) * 2024-05-24 2025-11-27 国立大学法人豊橋技術科学大学 真空アーク放電発生装置における陰極および真空アーク放電発生装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5703375A (en) * 1996-08-02 1997-12-30 Eaton Corporation Method and apparatus for ion beam neutralization
CN1195261A (zh) * 1996-12-31 1998-10-07 易通公司 用于离子源的旁热式阴极的端帽
JP2001283745A (ja) * 2000-03-30 2001-10-12 Kobe Steel Ltd イオン源

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3594885A (en) * 1969-06-16 1971-07-27 Varian Associates Method for fabricating a dimpled concave dispenser cathode incorporating a grid
US5583393A (en) * 1994-03-24 1996-12-10 Fed Corporation Selectively shaped field emission electron beam source, and phosphor array for use therewith
JP2787899B2 (ja) * 1995-03-20 1998-08-20 日本電気株式会社 冷陰極およびこれを用いた電子銃とマイクロ波管
JPH0963981A (ja) * 1995-08-29 1997-03-07 Hitachi Ltd イオン発生装置およびそれを用いたイオン注入装置
WO2002007180A1 (en) * 2000-07-19 2002-01-24 Matsushita Electric Industrial Co., Ltd. Electron emission element and production method therefor, and image display unit using this
US6576909B2 (en) * 2001-02-28 2003-06-10 International Business Machines Corp. Ion generation chamber
US6936145B2 (en) * 2002-02-28 2005-08-30 Ionedge Corporation Coating method and apparatus
JP4483395B2 (ja) * 2004-04-23 2010-06-16 パナソニック電工株式会社 イオン発生装置
US7723699B2 (en) * 2007-06-26 2010-05-25 Varian Semiconductor Equipment Associates, Inc. Cathode having electron production and focusing grooves, ion source and related method

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5703375A (en) * 1996-08-02 1997-12-30 Eaton Corporation Method and apparatus for ion beam neutralization
CN1195261A (zh) * 1996-12-31 1998-10-07 易通公司 用于离子源的旁热式阴极的端帽
JP2001283745A (ja) * 2000-03-30 2001-10-12 Kobe Steel Ltd イオン源

Also Published As

Publication number Publication date
KR20100041732A (ko) 2010-04-22
US20100140495A1 (en) 2010-06-10
KR101460053B1 (ko) 2014-11-11
CN101689488A (zh) 2010-03-31
WO2009002692A2 (en) 2008-12-31
WO2009002692A3 (en) 2009-02-26
JP5481375B2 (ja) 2014-04-23
TW200903554A (en) 2009-01-16
US7723699B2 (en) 2010-05-25
US20090001281A1 (en) 2009-01-01
US8022371B2 (en) 2011-09-20
TWI441228B (zh) 2014-06-11
JP2010532082A (ja) 2010-09-30

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