KR101460053B1 - 전자 생성 및 포커싱 홈들을 갖는 캐소드, 이온 소스 및 관련 방법 - Google Patents

전자 생성 및 포커싱 홈들을 갖는 캐소드, 이온 소스 및 관련 방법 Download PDF

Info

Publication number
KR101460053B1
KR101460053B1 KR1020107000056A KR20107000056A KR101460053B1 KR 101460053 B1 KR101460053 B1 KR 101460053B1 KR 1020107000056 A KR1020107000056 A KR 1020107000056A KR 20107000056 A KR20107000056 A KR 20107000056A KR 101460053 B1 KR101460053 B1 KR 101460053B1
Authority
KR
South Korea
Prior art keywords
cathode
grooves
angled
ion
ion source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020107000056A
Other languages
English (en)
Korean (ko)
Other versions
KR20100041732A (ko
Inventor
닐 제이. 바쏨
Original Assignee
베리안 세미콘덕터 이큅먼트 어소시에이츠, 인크.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 베리안 세미콘덕터 이큅먼트 어소시에이츠, 인크. filed Critical 베리안 세미콘덕터 이큅먼트 어소시에이츠, 인크.
Publication of KR20100041732A publication Critical patent/KR20100041732A/ko
Application granted granted Critical
Publication of KR101460053B1 publication Critical patent/KR101460053B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00—Ion beam tubes
    • H01J27/02—Ion sources; Ion guns
    • H01J27/20—Ion sources; Ion guns using particle beam bombardment, e.g. ionisers
    • H01J27/205—Ion sources; Ion guns using particle beam bombardment, e.g. ionisers with electrons, e.g. electron impact ionisation, electron attachment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/061—Construction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/08—Ion sources
    • H01J2237/0815—Methods of ionisation
    • H01J2237/082—Electron beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Combustion & Propulsion (AREA)
  • Analytical Chemistry (AREA)
  • Electron Sources, Ion Sources (AREA)
KR1020107000056A 2007-06-26 2008-06-09 전자 생성 및 포커싱 홈들을 갖는 캐소드, 이온 소스 및 관련 방법 Active KR101460053B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/768,242 US7723699B2 (en) 2007-06-26 2007-06-26 Cathode having electron production and focusing grooves, ion source and related method
US11/768,242 2007-06-26
PCT/US2008/066312 WO2009002692A2 (en) 2007-06-26 2008-06-09 Cathode having electron production and focusing grooves, ion source and related method

Publications (2)

Publication Number Publication Date
KR20100041732A KR20100041732A (ko) 2010-04-22
KR101460053B1 true KR101460053B1 (ko) 2014-11-11

Family

ID=40159236

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020107000056A Active KR101460053B1 (ko) 2007-06-26 2008-06-09 전자 생성 및 포커싱 홈들을 갖는 캐소드, 이온 소스 및 관련 방법

Country Status (6)

Country Link
US (2) US7723699B2 (enExample)
JP (1) JP5481375B2 (enExample)
KR (1) KR101460053B1 (enExample)
CN (1) CN101689488B (enExample)
TW (1) TWI441228B (enExample)
WO (1) WO2009002692A2 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7723699B2 (en) * 2007-06-26 2010-05-25 Varian Semiconductor Equipment Associates, Inc. Cathode having electron production and focusing grooves, ion source and related method
JP5363413B2 (ja) * 2010-05-10 2013-12-11 電気化学工業株式会社 電子源
JP6100619B2 (ja) * 2013-06-04 2017-03-22 株式会社日立ハイテクノロジーズ イオン源およびイオンミリング装置
US9818570B2 (en) * 2015-10-23 2017-11-14 Varian Semiconductor Equipment Associates, Inc. Ion source for multiple charged species
CN106449386A (zh) * 2016-09-26 2017-02-22 中国电子科技集团公司第四十八研究所 一种用于SiC晶片掺杂的离子注入方法及装置
US11462386B2 (en) * 2018-12-17 2022-10-04 Applied Materials, Inc. Electron beam apparatus for optical device fabrication
WO2025243543A1 (ja) * 2024-05-24 2025-11-27 国立大学法人豊橋技術科学大学 真空アーク放電発生装置における陰極および真空アーク放電発生装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09512659A (ja) * 1994-03-24 1997-12-16 フェド．コーポレーション 選択的形状の電界放出電子ビーム源、およびそれと共に使用する蛍光体配列
JPH10199430A (ja) * 1996-12-31 1998-07-31 Eaton Corp イオン注入機に用いるためのイオン源、カソード、及びそのエンドキャップ
JP2005310681A (ja) * 2004-04-23 2005-11-04 Matsushita Electric Works Ltd イオン発生装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3594885A (en) * 1969-06-16 1971-07-27 Varian Associates Method for fabricating a dimpled concave dispenser cathode incorporating a grid
JP2787899B2 (ja) * 1995-03-20 1998-08-20 日本電気株式会社 冷陰極およびこれを用いた電子銃とマイクロ波管
JPH0963981A (ja) * 1995-08-29 1997-03-07 Hitachi Ltd イオン発生装置およびそれを用いたイオン注入装置
US5703375A (en) 1996-08-02 1997-12-30 Eaton Corporation Method and apparatus for ion beam neutralization
JP3970497B2 (ja) 2000-03-30 2007-09-05 株式会社神戸製鋼所 イオン源を用いたイオンビーム発生方法，イオン源
WO2002007180A1 (en) * 2000-07-19 2002-01-24 Matsushita Electric Industrial Co., Ltd. Electron emission element and production method therefor, and image display unit using this
US6576909B2 (en) * 2001-02-28 2003-06-10 International Business Machines Corp. Ion generation chamber
US6936145B2 (en) * 2002-02-28 2005-08-30 Ionedge Corporation Coating method and apparatus
US7723699B2 (en) * 2007-06-26 2010-05-25 Varian Semiconductor Equipment Associates, Inc. Cathode having electron production and focusing grooves, ion source and related method

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09512659A (ja) * 1994-03-24 1997-12-16 フェド．コーポレーション 選択的形状の電界放出電子ビーム源、およびそれと共に使用する蛍光体配列
JPH10199430A (ja) * 1996-12-31 1998-07-31 Eaton Corp イオン注入機に用いるためのイオン源、カソード、及びそのエンドキャップ
JP2005310681A (ja) * 2004-04-23 2005-11-04 Matsushita Electric Works Ltd イオン発生装置

Also Published As

Publication number Publication date
KR20100041732A (ko) 2010-04-22
US20100140495A1 (en) 2010-06-10
CN101689488A (zh) 2010-03-31
WO2009002692A2 (en) 2008-12-31
WO2009002692A3 (en) 2009-02-26
CN101689488B (zh) 2012-05-30
JP5481375B2 (ja) 2014-04-23
TW200903554A (en) 2009-01-16
US7723699B2 (en) 2010-05-25
US20090001281A1 (en) 2009-01-01
US8022371B2 (en) 2011-09-20
TWI441228B (zh) 2014-06-11
JP2010532082A (ja) 2010-09-30

Similar Documents

Publication Publication Date Title
KR101460053B1 (ko) 전자 생성 및 포커싱 홈들을 갖는 캐소드, 이온 소스 및 관련 방법
JP2851213B2 (ja) 走査電子顕微鏡
JP4200656B2 (ja) 荷電粒子ビームに関する改善
KR101860337B1 (ko) 이온 빔 튜닝
US7102139B2 (en) Source arc chamber for ion implanter having repeller electrode mounted to external insulator
EP0416549A2 (en) Ion implantation equipment
JPH0326493B2 (enExample)
US9297063B2 (en) Plasma potential modulated ion implantation system
US20120056107A1 (en) Uniformity control using ion beam blockers
CN101203932A (zh) 用于使用快速离子束控制在固定射束离子注入过程中进行瞬态干扰恢复的方法和装置
CN101088138A (zh) 离子注入机的加速－减速管的聚焦效应的弱化
US10468220B1 (en) Indirectly heated cathode ion source assembly
KR20170055794A (ko) 이온주입기용 아크챔버
JP3528305B2 (ja) イオン源
KR100706374B1 (ko) 이온주입기의 분리형 피드 쓰루
US7892062B2 (en) High-definition cathode ray tube and electron gun with lower power consumption
US6903336B2 (en) Polarity exchanger and ion implanter having the same
JP2007149626A (ja) イオン注入方法及びその方法を使用するデバイス
JP2002243898A (ja) ビーム取り出し装置
JP7738189B2 (ja) 電子顕微鏡およびその画像撮影方法
JP2917627B2 (ja) イオン注入装置
JPH10289663A (ja) イオン生成装置
KR101685405B1 (ko) 이온주입기용 리펠러
KR19990027994A (ko) 이온 주입 장치 내 이온 가속기의 연결장치
KR20040018863A (ko) 이온 주입 장치의 아크 챔버

Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20100105

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
A201 Request for examination
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20130416

Comment text: Request for Examination of Application

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20140507

Patent event code: PE09021S01D

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

Patent event code: PE07011S01D

Comment text: Decision to Grant Registration

Patent event date: 20141010

GRNT Written decision to grant
PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 20141104

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 20141105

End annual number: 3

Start annual number: 1

PG1601 Publication of registration
FPAY Annual fee payment

Payment date: 20170929

Year of fee payment: 4

PR1001 Payment of annual fee

Payment date: 20170929

Start annual number: 4

End annual number: 4

FPAY Annual fee payment

Payment date: 20181031

Year of fee payment: 5

PR1001 Payment of annual fee

Payment date: 20181031

Start annual number: 5

End annual number: 5

PR1001 Payment of annual fee

Payment date: 20211026

Start annual number: 8

End annual number: 8

PR1001 Payment of annual fee

Payment date: 20221025

Start annual number: 9

End annual number: 9

PR1001 Payment of annual fee

Payment date: 20231023

Start annual number: 10

End annual number: 10

PR1001 Payment of annual fee

Payment date: 20241029

Start annual number: 11

End annual number: 11