CN101688324B - 利用局部冷却来生长带状晶体的方法和设备 - Google Patents

利用局部冷却来生长带状晶体的方法和设备 Download PDF

Info

Publication number
CN101688324B
CN101688324B CN2008800177324A CN200880017732A CN101688324B CN 101688324 B CN101688324 B CN 101688324B CN 2008800177324 A CN2008800177324 A CN 2008800177324A CN 200880017732 A CN200880017732 A CN 200880017732A CN 101688324 B CN101688324 B CN 101688324B
Authority
CN
China
Prior art keywords
ribbon
given portion
cooling
gas
partially formed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2008800177324A
Other languages
English (en)
Chinese (zh)
Other versions
CN101688324A (zh
Inventor
黄卫东
大卫·哈维
理查德·华莱士
斯科特·赖特斯玛
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Evergreen Solar Inc
Original Assignee
Evergreen Solar Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Evergreen Solar Inc filed Critical Evergreen Solar Inc
Publication of CN101688324A publication Critical patent/CN101688324A/zh
Application granted granted Critical
Publication of CN101688324B publication Critical patent/CN101688324B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/007—Pulling on a substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • C30B15/24—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using mechanical means, e.g. shaping guides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1052—Seed pulling including a sectioned crucible [e.g., double crucible, baffle]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
CN2008800177324A 2007-06-08 2008-05-27 利用局部冷却来生长带状晶体的方法和设备 Expired - Fee Related CN101688324B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/760,542 2007-06-08
US11/760,542 US7780782B2 (en) 2007-06-08 2007-06-08 Method and apparatus for growing a ribbon crystal with localized cooling
PCT/US2008/064854 WO2008150761A1 (en) 2007-06-08 2008-05-27 Method and apparatus for growing a ribbon crystal with localized cooling

Publications (2)

Publication Number Publication Date
CN101688324A CN101688324A (zh) 2010-03-31
CN101688324B true CN101688324B (zh) 2013-03-13

Family

ID=39637590

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2008800177324A Expired - Fee Related CN101688324B (zh) 2007-06-08 2008-05-27 利用局部冷却来生长带状晶体的方法和设备

Country Status (10)

Country Link
US (1) US7780782B2 (enExample)
EP (1) EP2162572A1 (enExample)
JP (1) JP5290282B2 (enExample)
KR (1) KR20100019528A (enExample)
CN (1) CN101688324B (enExample)
CA (1) CA2689143A1 (enExample)
IN (1) IN2009CN07691A (enExample)
MX (1) MX2009012745A (enExample)
MY (1) MY149124A (enExample)
WO (1) WO2008150761A1 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120164379A1 (en) * 2010-12-22 2012-06-28 Evergreen Solar, Inc. Wide Sheet Wafer
US20120211917A1 (en) * 2011-02-23 2012-08-23 Evergreen Solar, Inc. Wafer Furnace with Variable Flow Gas Jets

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4627887A (en) * 1980-12-11 1986-12-09 Sachs Emanuel M Melt dumping in string stabilized ribbon growth
US6200383B1 (en) * 1999-05-03 2001-03-13 Evergreen Solar, Inc. Melt depth control for semiconductor materials grown from a melt

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3124489A (en) * 1960-05-02 1964-03-10 Method of continuously growing thin strip crystals
US4221754A (en) * 1977-12-29 1980-09-09 Nowak Welville B Method for producing solid ribbons
US4217165A (en) * 1978-04-28 1980-08-12 Ciszek Theodore F Method of growing a ribbon crystal particularly suited for facilitating automated control of ribbon width
US4603034A (en) * 1980-12-12 1986-07-29 Vickery Iii Earle R Crystal growing system
US4873063A (en) * 1986-01-06 1989-10-10 Bleil Carl E Apparatus for zone regrowth of crystal ribbons
US4751059A (en) * 1986-12-05 1988-06-14 Westinghouse Electric Corp. Apparatus for growing dendritic web crystals of constant width
JP2587932B2 (ja) * 1987-03-23 1997-03-05 大同ほくさん株式会社 シリコンリボンの製造方法
JP3656821B2 (ja) * 1999-09-14 2005-06-08 シャープ株式会社 多結晶シリコンシートの製造装置及び製造方法
JP2001122696A (ja) * 1999-10-21 2001-05-08 Matsushita Seiko Co Ltd リボンシリコンウェハの製造方法
US6814802B2 (en) * 2002-10-30 2004-11-09 Evergreen Solar, Inc. Method and apparatus for growing multiple crystalline ribbons from a single crucible

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4627887A (en) * 1980-12-11 1986-12-09 Sachs Emanuel M Melt dumping in string stabilized ribbon growth
US6200383B1 (en) * 1999-05-03 2001-03-13 Evergreen Solar, Inc. Melt depth control for semiconductor materials grown from a melt

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
JP昭62-270488A 1987.11.24
JP特开2001-122696A 2001.05.08
Wallace,R.L. et al.Thin silicon String Ribbon for high efficiency polycrystalline solar cells.《Photovoltaic Specicalists Conference,1997.,Confere Record of the Twenty-sixth IEEE》.1997,第99-101页. *

Also Published As

Publication number Publication date
KR20100019528A (ko) 2010-02-18
EP2162572A1 (en) 2010-03-17
JP2010528971A (ja) 2010-08-26
CA2689143A1 (en) 2008-12-11
JP5290282B2 (ja) 2013-09-18
MY149124A (en) 2013-07-15
US20080302296A1 (en) 2008-12-11
CN101688324A (zh) 2010-03-31
WO2008150761A1 (en) 2008-12-11
IN2009CN07691A (enExample) 2015-10-09
US7780782B2 (en) 2010-08-24
MX2009012745A (es) 2009-12-11

Similar Documents

Publication Publication Date Title
TWI591026B (zh) 用於自連續移動之玻璃帶移除邊緣部分之設備及方法
JP5154700B2 (ja) ガラス板製造方法、ガラス板製造装置およびガラス板冷却方法
KR101476480B1 (ko) 유리 시트 성형 방법 및 장치
CN106165110B (zh) 使熔体成长为结晶片的结晶器及方法
CN105452542A (zh) 用于控制氧的坩埚组件和相关方法
JP2012140267A (ja) ＳｉＣ単結晶の製造装置および製造方法
CN101688324B (zh) 利用局部冷却来生长带状晶体的方法和设备
JP2017509578A5 (enExample)
CN102124150B (zh) 控制气载污染物跨晶带表面的转移
KR102405193B1 (ko) 결정질 시트를 형성하기 위한 장치 및 방법
US20120211917A1 (en) Wafer Furnace with Variable Flow Gas Jets
CN115874267A (zh) 导模法生长对称放肩氧化镓晶体的热场结构
KR101390799B1 (ko) 흑연 도가니
CN115074829B (zh) 拉晶炉
JP2019529312A5 (enExample)
CN110241457A (zh) 硅芯方锭铸锭装置及其铸造工艺
JP2008536793A (ja) 薄型半導体リボンの成長方法
CN119615352A (zh) 一种用于氧化镓晶体生长的装置及加热装置

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20130313

Termination date: 20140527