MX2009012745A - Metodo y aparato para aumentar un cristal veteado con enfriamiento localizado. - Google Patents

Metodo y aparato para aumentar un cristal veteado con enfriamiento localizado.

Info

Publication number
MX2009012745A
MX2009012745A MX2009012745A MX2009012745A MX2009012745A MX 2009012745 A MX2009012745 A MX 2009012745A MX 2009012745 A MX2009012745 A MX 2009012745A MX 2009012745 A MX2009012745 A MX 2009012745A MX 2009012745 A MX2009012745 A MX 2009012745A
Authority
MX
Mexico
Prior art keywords
ribbon crystal
growing
localized cooling
molten material
partially formed
Prior art date
Application number
MX2009012745A
Other languages
English (en)
Spanish (es)
Inventor
Weidong Huang
David Harvey
Richard Wallace
Scott Reitsma
Original Assignee
Evergreen Solar Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Evergreen Solar Inc filed Critical Evergreen Solar Inc
Publication of MX2009012745A publication Critical patent/MX2009012745A/es

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/007—Pulling on a substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • C30B15/24—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using mechanical means, e.g. shaping guides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1052—Seed pulling including a sectioned crucible [e.g., double crucible, baffle]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
MX2009012745A 2007-06-08 2008-05-27 Metodo y aparato para aumentar un cristal veteado con enfriamiento localizado. MX2009012745A (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/760,542 US7780782B2 (en) 2007-06-08 2007-06-08 Method and apparatus for growing a ribbon crystal with localized cooling
PCT/US2008/064854 WO2008150761A1 (en) 2007-06-08 2008-05-27 Method and apparatus for growing a ribbon crystal with localized cooling

Publications (1)

Publication Number Publication Date
MX2009012745A true MX2009012745A (es) 2009-12-11

Family

ID=39637590

Family Applications (1)

Application Number Title Priority Date Filing Date
MX2009012745A MX2009012745A (es) 2007-06-08 2008-05-27 Metodo y aparato para aumentar un cristal veteado con enfriamiento localizado.

Country Status (10)

Country Link
US (1) US7780782B2 (enExample)
EP (1) EP2162572A1 (enExample)
JP (1) JP5290282B2 (enExample)
KR (1) KR20100019528A (enExample)
CN (1) CN101688324B (enExample)
CA (1) CA2689143A1 (enExample)
IN (1) IN2009CN07691A (enExample)
MX (1) MX2009012745A (enExample)
MY (1) MY149124A (enExample)
WO (1) WO2008150761A1 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120164379A1 (en) * 2010-12-22 2012-06-28 Evergreen Solar, Inc. Wide Sheet Wafer
US20120211917A1 (en) * 2011-02-23 2012-08-23 Evergreen Solar, Inc. Wafer Furnace with Variable Flow Gas Jets

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL264214A (enExample) * 1960-05-02 1900-01-01
US4221754A (en) * 1977-12-29 1980-09-09 Nowak Welville B Method for producing solid ribbons
US4217165A (en) * 1978-04-28 1980-08-12 Ciszek Theodore F Method of growing a ribbon crystal particularly suited for facilitating automated control of ribbon width
US4627887A (en) * 1980-12-11 1986-12-09 Sachs Emanuel M Melt dumping in string stabilized ribbon growth
US4603034A (en) * 1980-12-12 1986-07-29 Vickery Iii Earle R Crystal growing system
US4873063A (en) * 1986-01-06 1989-10-10 Bleil Carl E Apparatus for zone regrowth of crystal ribbons
US4751059A (en) * 1986-12-05 1988-06-14 Westinghouse Electric Corp. Apparatus for growing dendritic web crystals of constant width
JP2587932B2 (ja) * 1987-03-23 1997-03-05 大同ほくさん株式会社 シリコンリボンの製造方法
US6200383B1 (en) * 1999-05-03 2001-03-13 Evergreen Solar, Inc. Melt depth control for semiconductor materials grown from a melt
JP3656821B2 (ja) * 1999-09-14 2005-06-08 シャープ株式会社 多結晶シリコンシートの製造装置及び製造方法
JP2001122696A (ja) * 1999-10-21 2001-05-08 Matsushita Seiko Co Ltd リボンシリコンウェハの製造方法
US6814802B2 (en) * 2002-10-30 2004-11-09 Evergreen Solar, Inc. Method and apparatus for growing multiple crystalline ribbons from a single crucible

Also Published As

Publication number Publication date
MY149124A (en) 2013-07-15
JP2010528971A (ja) 2010-08-26
KR20100019528A (ko) 2010-02-18
WO2008150761A1 (en) 2008-12-11
US7780782B2 (en) 2010-08-24
JP5290282B2 (ja) 2013-09-18
CN101688324A (zh) 2010-03-31
EP2162572A1 (en) 2010-03-17
IN2009CN07691A (enExample) 2015-10-09
CN101688324B (zh) 2013-03-13
US20080302296A1 (en) 2008-12-11
CA2689143A1 (en) 2008-12-11

Similar Documents

Publication Publication Date Title
WO2008014434A3 (en) Crystal growth method and reactor design
SG144051A1 (en) Method and device for producing semiconductor wafers of silicon
SG170684A1 (en) Device for producing a single crystal composed of silicon by remelting granules
TW200940752A (en) Sheet production apparatus, sheet production method, and production formed using the same
EP2194166A4 (en) QUARTZ GLASS LEVER, PROCESS FOR ITS MANUFACTURE AND PRODUCTION PROCESS
WO2012067372A3 (en) Sapphire ingot grower
WO2008155673A8 (en) Method for producing sic single crystal
MY152943A (en) Method for producing a silicon ingot
EP2418173A3 (en) Method for controlling resistivity in ingots made of compensated feedstock silicon
TW200630398A (en) Photoreactive polymer and process of making the same
WO2013025024A3 (en) Ingot growing apparatus and method of manufacturing ingot
TW200833887A (en) Method and apparatus for forming a silicon wafer
EP2450318A3 (en) Method and apparatus of continuously forming crystallized glass
MX2009012745A (es) Metodo y aparato para aumentar un cristal veteado con enfriamiento localizado.
WO2012050307A3 (en) Apparatus and method for sawing single crystal ingot
TW200631894A (en) A method of improving the crystalline perfection of diamond crystals
MY170263A (en) Weir for improved crystal growth in a continuous czochralski process
TW201129730A (en) Single crystal pulling apparatus and single crystal pulling method
WO2010028103A3 (en) String ribbon crystal and method to grow them using strings with refractory metal core
WO2013019026A3 (en) Apparatus for fabricating ingot
WO2013030470A8 (fr) Système de fabrication d'un matériau cristallin par cristallisation dirigée muni d'une source de chaleur additionnelle latérale
MX2009013011A (es) Control termico desmontable para hornos de estirado de cristal cinta.
EP2128083A4 (en) NITROGEN-CONTAINING CARBON MATERIAL AND METHOD FOR THE PRODUCTION THEREOF
EP2218806A4 (en) AlN-CRYSTAL AND METHOD FOR ITS BREEDING
WO2013019027A3 (en) Apparatus for fabricating ingot and method for fabricating ingot

Legal Events

Date Code Title Description
HH Correction or change in general
FG Grant or registration