JP5290282B2 - 局所冷却によってリボン結晶を成長させる方法および装置 - Google Patents

局所冷却によってリボン結晶を成長させる方法および装置 Download PDF

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Publication number
JP5290282B2
JP5290282B2 JP2010511247A JP2010511247A JP5290282B2 JP 5290282 B2 JP5290282 B2 JP 5290282B2 JP 2010511247 A JP2010511247 A JP 2010511247A JP 2010511247 A JP2010511247 A JP 2010511247A JP 5290282 B2 JP5290282 B2 JP 5290282B2
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Japan
Prior art keywords
ribbon crystal
given portion
gas
partially formed
cooling
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Expired - Fee Related
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JP2010511247A
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English (en)
Japanese (ja)
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JP2010528971A (ja
Inventor
ウェイドン ハン，
デイビッド ハーベイ，
リチャード ウォレス，
スコット レイツマ，
Original Assignee
エバーグリーン ソーラー， インコーポレイテッド
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Application filed by エバーグリーン ソーラー， インコーポレイテッド filed Critical エバーグリーン ソーラー， インコーポレイテッド
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/007—Pulling on a substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • C30B15/24—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using mechanical means, e.g. shaping guides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1052—Seed pulling including a sectioned crucible [e.g., double crucible, baffle]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP2010511247A 2007-06-08 2008-05-27 局所冷却によってリボン結晶を成長させる方法および装置 Expired - Fee Related JP5290282B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/760,542 2007-06-08
US11/760,542 US7780782B2 (en) 2007-06-08 2007-06-08 Method and apparatus for growing a ribbon crystal with localized cooling
PCT/US2008/064854 WO2008150761A1 (en) 2007-06-08 2008-05-27 Method and apparatus for growing a ribbon crystal with localized cooling

Publications (2)

Publication Number Publication Date
JP2010528971A JP2010528971A (ja) 2010-08-26
JP5290282B2 true JP5290282B2 (ja) 2013-09-18

Family

ID=39637590

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010511247A Expired - Fee Related JP5290282B2 (ja) 2007-06-08 2008-05-27 局所冷却によってリボン結晶を成長させる方法および装置

Country Status (10)

Country Link
US (1) US7780782B2 (enExample)
EP (1) EP2162572A1 (enExample)
JP (1) JP5290282B2 (enExample)
KR (1) KR20100019528A (enExample)
CN (1) CN101688324B (enExample)
CA (1) CA2689143A1 (enExample)
IN (1) IN2009CN07691A (enExample)
MX (1) MX2009012745A (enExample)
MY (1) MY149124A (enExample)
WO (1) WO2008150761A1 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120164379A1 (en) * 2010-12-22 2012-06-28 Evergreen Solar, Inc. Wide Sheet Wafer
US20120211917A1 (en) * 2011-02-23 2012-08-23 Evergreen Solar, Inc. Wafer Furnace with Variable Flow Gas Jets

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL264214A (enExample) * 1960-05-02 1900-01-01
US4221754A (en) * 1977-12-29 1980-09-09 Nowak Welville B Method for producing solid ribbons
US4217165A (en) * 1978-04-28 1980-08-12 Ciszek Theodore F Method of growing a ribbon crystal particularly suited for facilitating automated control of ribbon width
US4627887A (en) * 1980-12-11 1986-12-09 Sachs Emanuel M Melt dumping in string stabilized ribbon growth
US4603034A (en) * 1980-12-12 1986-07-29 Vickery Iii Earle R Crystal growing system
US4873063A (en) * 1986-01-06 1989-10-10 Bleil Carl E Apparatus for zone regrowth of crystal ribbons
US4751059A (en) * 1986-12-05 1988-06-14 Westinghouse Electric Corp. Apparatus for growing dendritic web crystals of constant width
JP2587932B2 (ja) * 1987-03-23 1997-03-05 大同ほくさん株式会社 シリコンリボンの製造方法
US6200383B1 (en) * 1999-05-03 2001-03-13 Evergreen Solar, Inc. Melt depth control for semiconductor materials grown from a melt
JP3656821B2 (ja) * 1999-09-14 2005-06-08 シャープ株式会社 多結晶シリコンシートの製造装置及び製造方法
JP2001122696A (ja) * 1999-10-21 2001-05-08 Matsushita Seiko Co Ltd リボンシリコンウェハの製造方法
US6814802B2 (en) * 2002-10-30 2004-11-09 Evergreen Solar, Inc. Method and apparatus for growing multiple crystalline ribbons from a single crucible

Also Published As

Publication number Publication date
MY149124A (en) 2013-07-15
JP2010528971A (ja) 2010-08-26
KR20100019528A (ko) 2010-02-18
WO2008150761A1 (en) 2008-12-11
US7780782B2 (en) 2010-08-24
CN101688324A (zh) 2010-03-31
EP2162572A1 (en) 2010-03-17
IN2009CN07691A (enExample) 2015-10-09
CN101688324B (zh) 2013-03-13
US20080302296A1 (en) 2008-12-11
MX2009012745A (es) 2009-12-11
CA2689143A1 (en) 2008-12-11

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