CN101681785B - 用于提高等离子体工艺中的处理均匀性的设备和方法 - Google Patents

用于提高等离子体工艺中的处理均匀性的设备和方法 Download PDF

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Publication number
CN101681785B
CN101681785B CN2008800184440A CN200880018444A CN101681785B CN 101681785 B CN101681785 B CN 101681785B CN 2008800184440 A CN2008800184440 A CN 2008800184440A CN 200880018444 A CN200880018444 A CN 200880018444A CN 101681785 B CN101681785 B CN 101681785B
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China
Prior art keywords
workpiece
plasma
sacrificial body
peripheral edge
sacrificial
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Expired - Fee Related
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CN2008800184440A
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English (en)
Chinese (zh)
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CN101681785A (zh
Inventor
赵建钢
詹姆士·D·格蒂
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Nordson Corp
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Nordson Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3343—Problems associated with etching

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
CN2008800184440A 2007-06-01 2008-05-23 用于提高等离子体工艺中的处理均匀性的设备和方法 Expired - Fee Related CN101681785B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US94151807P 2007-06-01 2007-06-01
US60/941,518 2007-06-01
US12/125,335 US20080296261A1 (en) 2007-06-01 2008-05-22 Apparatus and methods for improving treatment uniformity in a plasma process
US12/125,335 2008-05-22
PCT/US2008/064670 WO2008150739A1 (en) 2007-06-01 2008-05-23 Apparatus and methods for improving treatment uniformity in a plasma process

Publications (2)

Publication Number Publication Date
CN101681785A CN101681785A (zh) 2010-03-24
CN101681785B true CN101681785B (zh) 2012-05-09

Family

ID=40086939

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2008800184440A Expired - Fee Related CN101681785B (zh) 2007-06-01 2008-05-23 用于提高等离子体工艺中的处理均匀性的设备和方法

Country Status (7)

Country Link
US (1) US20080296261A1 (https=)
JP (1) JP2010529656A (https=)
KR (1) KR20100025515A (https=)
CN (1) CN101681785B (https=)
DE (1) DE112008001482T5 (https=)
TW (1) TW200905777A (https=)
WO (1) WO2008150739A1 (https=)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008024681A2 (en) 2006-08-22 2008-02-28 Nordson Corporation Apparatus and methods for handling workpieces in a processing system
US8372238B2 (en) 2008-05-20 2013-02-12 Nordson Corporation Multiple-electrode plasma processing systems with confined process chambers and interior-bussed electrical connections with the electrodes
CN102099870A (zh) * 2008-06-11 2011-06-15 因特瓦克公司 用于在太阳能电池制作中使用的专用注入系统和方法
US8749053B2 (en) * 2009-06-23 2014-06-10 Intevac, Inc. Plasma grid implant system for use in solar cell fabrications
TWI506719B (zh) 2011-11-08 2015-11-01 因特瓦克公司 基板處理系統及方法
CN103165374B (zh) * 2011-12-08 2017-05-10 中微半导体设备(上海)有限公司 一种等离子体处理装置及应用于等离子处理装置的边缘环
US9385017B2 (en) * 2012-08-06 2016-07-05 Nordson Corporation Apparatus and methods for handling workpieces of different sizes
US9318332B2 (en) 2012-12-19 2016-04-19 Intevac, Inc. Grid for plasma ion implant
JP7451490B2 (ja) * 2018-07-30 2024-03-18 ノードソン コーポレーション プラズマを用いたワーク処理用のシステム
CN113035680B (zh) * 2019-12-24 2024-06-14 中微半导体设备(上海)股份有限公司 用于真空设备的调平机构和等离子体处理装置
CN111180370A (zh) * 2020-02-21 2020-05-19 北京北方华创微电子装备有限公司 晶圆承载托盘及半导体加工设备

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6284093B1 (en) * 1996-11-29 2001-09-04 Applied Materials, Inc. Shield or ring surrounding semiconductor workpiece in plasma chamber
CN1723528A (zh) * 2000-10-13 2006-01-18 兰姆研究公司 用于实现均匀等离子处理的阶梯式上部电极

Family Cites Families (15)

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Publication number Priority date Publication date Assignee Title
US4786359A (en) * 1987-06-24 1988-11-22 Tegal Corporation Xenon enhanced plasma etch
JPH0373524A (ja) * 1989-08-14 1991-03-28 Fujitsu Ltd エッチング方法
US20010049196A1 (en) * 1997-09-09 2001-12-06 Roger Patrick Apparatus for improving etch uniformity and methods therefor
US6074488A (en) * 1997-09-16 2000-06-13 Applied Materials, Inc Plasma chamber support having an electrically coupled collar ring
US6014979A (en) * 1998-06-22 2000-01-18 Applied Materials, Inc. Localizing cleaning plasma for semiconductor processing
DE29813326U1 (de) * 1998-07-29 1998-12-10 PROTEC Gesellschaft für Werkstoff- und Oberflächentechnik mbH, 57234 Wilnsdorf Verbesserte Vorrichtung zum Schutz von elektrostatischen Haltesystemen in Anlagen zur Bearbeitung von Wafern
JP2000299305A (ja) * 1999-04-16 2000-10-24 Toshiba Corp プラズマ処理装置
US6344105B1 (en) * 1999-06-30 2002-02-05 Lam Research Corporation Techniques for improving etch rate uniformity
US6475336B1 (en) * 2000-10-06 2002-11-05 Lam Research Corporation Electrostatically clamped edge ring for plasma processing
US6554954B2 (en) * 2001-04-03 2003-04-29 Applied Materials Inc. Conductive collar surrounding semiconductor workpiece in plasma chamber
JP2003100713A (ja) * 2001-09-26 2003-04-04 Kawasaki Microelectronics Kk プラズマ電極用カバー
US6776849B2 (en) * 2002-03-15 2004-08-17 Asm America, Inc. Wafer holder with peripheral lift ring
KR100610010B1 (ko) * 2004-07-20 2006-08-08 삼성전자주식회사 반도체 식각 장치
KR100674922B1 (ko) * 2004-12-02 2007-01-26 삼성전자주식회사 포커스 링을 냉각하는 냉각 유로를 가지는 웨이퍼지지장치
WO2008024681A2 (en) * 2006-08-22 2008-02-28 Nordson Corporation Apparatus and methods for handling workpieces in a processing system

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6284093B1 (en) * 1996-11-29 2001-09-04 Applied Materials, Inc. Shield or ring surrounding semiconductor workpiece in plasma chamber
CN1723528A (zh) * 2000-10-13 2006-01-18 兰姆研究公司 用于实现均匀等离子处理的阶梯式上部电极

Also Published As

Publication number Publication date
WO2008150739A1 (en) 2008-12-11
CN101681785A (zh) 2010-03-24
DE112008001482T5 (de) 2010-04-29
TW200905777A (en) 2009-02-01
KR20100025515A (ko) 2010-03-09
JP2010529656A (ja) 2010-08-26
US20080296261A1 (en) 2008-12-04

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