CN101636830A - 半导体装置及其制造方法 - Google Patents

半导体装置及其制造方法 Download PDF

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Publication number
CN101636830A
CN101636830A CN200780052298A CN200780052298A CN101636830A CN 101636830 A CN101636830 A CN 101636830A CN 200780052298 A CN200780052298 A CN 200780052298A CN 200780052298 A CN200780052298 A CN 200780052298A CN 101636830 A CN101636830 A CN 101636830A
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extension
metal fine
electrode
semiconductor device
semiconductor chip
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CN200780052298A
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CN101636830B (zh
Inventor
中里功
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Sanyo Electric Co Ltd
System Solutions Co Ltd
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Sanyo Electric Co Ltd
Sanyo Semiconductor Co Ltd
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Publication of CN101636830A publication Critical patent/CN101636830A/zh
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Abstract

本发明提供一种薄型半导体装置及其制造方法，该半导体装置使金属细线的环路高度比现有的更低。本发明的半导体装置采用如下结构，即经由金属细线(51)将半导体芯片(54)的接合垫(55)和电极(53B)连接。所述金属细线(51)从第一接合点描绘弯曲部(57)，且经由弯曲部(57)端部的曲折部(59)而具有直线状的第二延伸部(60)。

Description

半导体装置及其制造方法
技术领域
本发明涉及采用金属细线的半导体装置及其制造方法。
背景技术
近年来，手机、PDA、DVC、DSC这样的便携式电子设备的高性能化正在加速，为使这样的产品被市场接受，需要使其小型化/轻量化。而且，在地球温暖化进程中，寻求尽可能地减少资源的使用，且不产生环境负荷。当然，半导体装置也在寻求轻量化、薄型化及小型化且进一步削减材料。
另一方面，由于半导体装置寻求薄型化，故有时不采用金属细线而使用导电板代替倒装片安装、金属细线。但是，由于金属细线的接合技术在较长历史时期内发展而成，是可靠性高的技术，因此，仍继续采用。
例如，图8是典型的半导体装置100的剖面图，该半导体装置100由如下部件构成：固定于岛部101上的半导体芯片102；一端接近岛部101的周围而配置的引线103；将半导体芯片102的接合垫和上述引线103电连接的金属细线104A(或104B)；将上述岛部101、半导体芯片102、引线103、金属细线104A密封的树脂105。
在此，金属细线104表示出两种，虚线所示的是以往一直采用的三角形环路的金属细线104A，实线所示的是M型环路的金属细线104B。
前者的金属细线104A至顶部106的高度相当高。因此，若与薄型封装对应，则需要降低其顶部106的高度。但是，若降低顶部106的高度，则从顶部106倾斜延伸的金属细线104A可能与半导体芯片102短路。
因此，开发出一种降低金属线环路的高度而且不会与半导体芯片102短路的形状。其被称作M环路，例如记载于日本特许第3276899号公报中。
参照图7说明上述M环路的形状的金属细线104B的制造方法。图7(A)是表示毛细管150的轨迹的图，图7(B)～图7(H)是表示金属细线根据上述轨迹描绘出某种形状的图。另外，图7(B)中设置于毛细管150的箭头表示图7(A)所示的附图标记及箭头的方向。例如，图7(B)中的箭头157是图7(A)中第三个箭头，也对其标注相同的附图标记。即，图7(B)所示的箭头应该描绘毛细管150上升的过程。
1、毛细管150例如与半导体芯片的接合垫151进行第一接合后，如箭头155、156、157那样移动。由此，如图7(B)所示，金属细线向右倾斜地延伸后，形成上升的金属细线。
2、如图7(A)所示的箭头158那样向右侧移动。由此，如图7(C)所示，金属细线形成向左凸出的抛物线。
3、如图7(A)中箭头159那样上升到一定高度，之后，如箭头160那样沿水平方向移动，进一步如箭头161那样在垂直方向下降。由此，如图7(E)所示，形成M环路的中央的槽165。
4、如图7(A)中箭头162所示，沿垂直方向上升，通过与毛细管150一同装备的紧固件保持金属细线，如箭头163所示，描绘环路并与电极152的上面进行第二接合。由此，如图7(H)所示，可形成M环路。
根据上述的现有技术，图7(H)的曲折部166形成为位于芯片端110的外侧，能够降低金属细线的高度，与此同时，能够保持芯片端110和金属细线104B的离开距离。
即，能够减薄封装的厚度，与此同时能够防止金属细线的短路。
但是，由于便携式设备的进步，因此，寻求进一步的轻量化、薄型化及小型化，并寻求该环路高度进一步降低的连接方法。
发明内容
本发明的半导体装置至少具有：具有接合垫的半导体芯片、配置于所述半导体芯片周围的电极、将所述接合垫和所述电极电连接的金属细线，该半导体装置的特征在于，所述金属细线包含：一端与所述接合垫连接且顶部向上方弯曲的弯曲部；经由曲折部与所述弯曲部连续且朝向所述电极直线延伸的延伸部。
另外，本发明的半导体装置至少具有：具有接合垫的半导体芯片、配置于所述半导体芯片周围的电极、将所述接合垫和所述电极电连接的金属细线，该半导体装置的特征在于，所述金属细线包含：一端与所述接合垫连接且顶部向上方弯曲的第一延伸部；经由曲折部与所述第一延伸部连续且朝向所述电极直线延伸的第二延伸部；从所述第二延伸部的端部朝向所述电极下降的第三延伸部。
另外，本发明的半导体装置的制造方法，使用接合装置并使用金属细线将半导体芯片和配置于所述半导体芯片周围的电极电连接，该接合装置至少具有毛细管、位于所述毛细管的端部附近的火花装置及紧固件，该半导体装置的制造方法的特征在于，具备如下工序：在利用所述火花装置在所述毛细管的端部形成金属球时，通过控制所述火花装置中流动的电流的时间，控制由从所述金属球延伸的金属细线的再结晶部分构成的硬质部的长度的工序；将所述金属球与所述半导体芯片的接合垫连接的工序；以使用所述毛细管形成第一延伸部、曲折部及第二延伸部的方式使与所述金属球一体的金属细线曲折的工序，该第一延伸部为描绘出将顶部向上方弯曲的轨迹的弯曲部，该曲折部设于所述第一延伸部的终端部，该第二延伸部朝向所述电极直线状延伸；在使所述金属细线曲折的工序中，所述硬质部的终端区域位于所述曲折部或比所述曲折部更靠近所述半导体芯片侧。
在半导体芯片的接合垫和电极之间的金属细线中，当在第一接合点及其附近形成弯曲部时，在弯曲部的端部形成曲折部，该弯曲部实质上是设有将圆分割后的形状或半椭圆(在中途将椭圆分割后的上半部)轨迹的弯曲部。
因此，可以使呈水平且比弯曲部的顶部低的水平部自曲折部向第二接合点侧延伸，因此，可降低金属细线的环路高度，其结果是可减薄半导体装置的厚度。
由于可利用以往的经过历史累积而成的可靠性高的引线接合法来实现，因此，即使是薄型封装也能够实现可靠性高的封装。
另外，该曲折部可通过接合装置的形成金属球的火花装置进行调节。即，通过该火花装置，可以使再结晶部分的硬质部增长或缩短，若缩短，则可将弯曲部的高度抑制得低，而且，硬质部和比其软的软质部的边界及其附近容易形成曲折部，因此，可实现图1、图2所示的金属细线的形状。
附图说明
图1是说明本发明的半导体装置的图；
图2是说明本发明中采用的金属细线的金属线环路的图；
图3(A)、(B)是说明本发明的半导体装置的图；
图4(A)、(B)、(C)是说明本发明的制造方法的图；
图5是说明本发明的制造方法的图；
图6(A)、(B)、(C)是说明本发明的制造方法的图；
图7(A)、(B)、(C)、(D)、(E)、(F)、(G)、(H)是说明现有的金属线环路的图；
图8是说明现有的半导体装置的图。
具体实施方式
通常，使用金属细线的金属线的环路如图8中虚线所示，描绘三角形环路。该环路在第一接合点200的局部进行球形接合后，使金属细线向上方延伸，之后，在顶部106设置曲折部，之后使其向斜下方延伸，因此，通常描绘三角形环路。
另外，图8中的实线也相同。若简单地考虑，从上方压下三角形环路的金属细线104A的顶部106，则可将头部形成为M字形状。但是，自曲折部202到第二接合点的金属细线104B的轨迹与三角形环路104A同样地，向斜下方描绘实质上为直线状的轨迹(以下称作直线状的延伸部)。因此，在三角形环路、M环路中，直线状的延伸部，具体而言为附图标记104A、104B的引出线所指的部分存在一定程度的差，有可能与芯片的角部接触。
为解决上述问题，可考虑在该直线状的延伸部104A、104B的中途呈水平地延伸的结构。例如，如果金属细线104A中黑圈A的部分呈水平地延伸，金属细线104B中黑圈B的部分呈水平地延伸，则可抑制芯片周围即芯片的角部的短路。
本发明考虑到这一点而形成顶部低的金属线环路。图1及图3表示适用了本发明的半导体装置的结构，图2、图4～图6对其具体结构或其制造方法进行说明。
首先，参照图2说明金属细线51的形状。在此，与金属细线51电连接的电极可考虑引线架的内引线、设于安装基板52的电极等，图中采用了安装基板。
作为安装基板52，可考虑由印刷线路板及柔性基板等构成的树脂基板、陶瓷基板、玻璃基板、金属基板及Si基板等。作为树脂基板，主要采用环氧树脂、聚酰亚胺树脂等，但并不限于此。另外，作为陶瓷基板主要采用氧化铝烧结体，但若为绝缘材料，则对材料没有限制。另外，金属基板采用铝基板或Cu基板，考虑到与导电图案绝缘，在基板的表面形成有绝缘膜。另外，Si基板通常称作Si插入板(インタ一ポ一ザ)，为了使其与载置的半导体芯片的热膨胀系数一致，基板自身为Si。另外，由于Si为半导体材料，因此，通常其表面由氧化硅膜覆盖，该氧化硅膜等通过热氧化、CVD、溅射等形成。
另外，在整个安装基板上，也可以呈多层地形成大多使用通孔的导电图案。该情况下，图中所示的电极53A、53B只要考虑以Cu为主材料在最上层形成即可。
在此，电极53A由于安装有半导体芯片54，因此在此作为岛部起作用。在此，将半导体芯片54的背面固定于电极53A上面的粘接材料，采用焊锡或导电膏等导电性粘接材料或绝缘性粘接材料。若将半导体芯片54的背面固定在规定的电压，则采用导电性粘接材料作为该粘接材料。另一方面，在使半导体芯片54的背面电浮动时，使用绝缘性的粘接剂安装半导体芯片54。电极53B例如为由Cu构成的电极，为了对应第二接合点，在表面上覆盖Ni且在其上覆盖Au。
另外，半导体芯片54可以为分立式晶体管、IC等，在最表面，露出接合垫55。该金属细线51与接合垫55在第一接合点56A连接，金属细线51的一端通过球形接合而连接。另一方面，金属细线51的另一端与第二接合点56B(电极53B的上面)连接并进行针脚形接合。
自球形接合了该金属细线51一端的部分的根部，实质上描绘弯曲部57，包含其顶部58向上方凸出地形成。作为金属细线51的轨迹形状，实质上为将圆在中途分割后的形状或将椭圆在中途分割后的形状。即，弯曲部57的一端自第一接合点开始，在弯曲部57的另一端59，第一延伸部57构成终端。在此，该弯曲部也可以为三角形那样的形状。
该弯曲部57的另一端59也是金属细线51的曲折部，作为第二延伸部60，金属细线51在纸面上自此向左侧(电极53B侧)直线延伸。第二延伸部60相对于安装基板52的上面平行(水平)地延伸。具体而言，电极53B的高度位于第二延伸部60的位置的下方，因此，在第二延伸部的另一端形成有第二曲折部61，自此向电极53B下降，并进行第二接合。从第二曲折部61向斜下方延伸至电极53B的部分成为第三延伸部62。
在此，沿着从金属球到第一曲折部59的金属细线51的长度约为100μm±10μm，从接合垫55的表面到弯曲部的顶部58的高度约为60μm～70μm。具体进行说明，由于弯曲部57的箭头线C的长度为100μm±10μm，箭头线D(顶部58到焊盘55表面的长度)为60μm～70μm，因此，弯曲部57的形状不是完全的圆，基本上可以说为椭圆。另外，弯曲部57的形状也可以看作是将圆或椭圆的一部分分割后的形状。
本发明在形成该弯曲部57这方面有意义。即，可使该弯曲部57的另一端59产生金属褶皱，并自此呈水平或直线状地设置第二延伸部60，这种情况是有意义。该第二延伸部60例如不会延伸至超过顶部58的高度，若进行第二接合，则该一连串的金属线环路由顶部58确定。
并且，参照图1中左侧的金属细线70说明金属细线51的形状。左侧的金属细线70采用与右侧的金属细线71相同的金属线，但为了说明位置关系，在图1中用细线表示金属细线70。虚线表示的细线72说明的是第二延伸部60实质上呈直线状延伸的情况，无论哪种情况，第三延伸部62都下降。因此，若将作为其边界的第二曲折部61设定为比顶部58的高度低，则金属细线70的高度由顶部58确定。这样，第二曲折部61的位置在位于弯曲部57的顶部58下方的范围内即可，直线状的第二延伸部60也可以稍微向斜上方延伸。当然，第二延伸部60也可以水平延伸或下降。
而且，根据需要，作为本半导体装置，若需要树脂密封，则安装基板52整体被绝缘树脂密封。该密封通过接合、传递模、注射模等实现。另外，在由壳体密封的情况下，其内部设为中空。因此，也存在在安装基板52的表面未设置树脂的情况。
如前所述，图1是图2的变形例。将第二接合点的高度设定为比第一接合点的位置高。这是为了将电极53B的厚度设定为比半导体芯片54的接合垫的高度高，并使第一曲折部59远离半导体芯片54或半导体芯片54的角部。如前所述，设置有弯曲部57、第一曲折部59、朝向斜上方而呈直线状的第二延伸部60、以及第二曲折部61、第三延伸部62。
而且，第二曲折部61设置成位于顶部58的下方，并自此向第二接合点下降。因此，封装的整体厚度由该弯曲部57的大小来确定。
接着，对该弯曲部57的大小的确定方法进行说明。图4是对该确定方法进行说明的图。图4(A)、图4(B)表示在金属线接合装置70上安装了金属细线71的结构图。毛细管(キヤピラリ)72是用于接合的头部，紧固件(クランパ)73在切断金属细线71时保持金属细线71。另外，位于金属细线71端部的附图标记74为火花装置(スパ一ク手段)。这三个装置通常被一体地安装于接合装置上。
位于毛细管72中心的中空部中穿过金属细线71，从毛细管72的端部陆续放出规定长度的金属细线71。而且，火花装置73为熔融装置，如图4(B)所示，将金属细线71的端部形成为球状。
上述球状的点是根据火花电流的值、通电时间形成金属球的点。该熔融的部分在成为高温后被冷却。因此，如图4(B)所示，如点所划的阴影所示，在金属细线71上形成多晶状态的再结晶部。该部分通常进行加热且使其冷却，因此，该部分相当于淬火的部分。例如田中电子工业株式会社的产品目录中，称作Heat Affected Zone(热影响部)，取字头而称作HAZ，只要为通常的接合装置，则必然产生。形成该多结晶的部分的金属细线71的长度例如为85μm～130μm左右。
如图4(C)所示，尝试以下面所示的材料即GLF、GMG的Au线进行以下的试验。将火花电流的值稳定在27.5mA，将通电时间稳定在0.5msec，尝试研究HAZ的长度。两者的线径为23μm。由于装置相同，故加热/冷却条件可看作是同一条件。
其结果是，HAZ的长度在GLF时为110～130μm，在GMG时为150～170μm，其环路高度分别为62μm、70μm。
在此，Au线等金属细线71分为各种类型，在目录中，例如通过以下类型来区分。若按照该目录简单地进行说明，则分成如下类型，即，GMG、GMH为高强度Au线，GLF为超低环路用Au线，GFC、GFD为精细间距(フアインピツチ)用Au线。
由于GMG为高硬度，相比GLF为硬质，因此，推测出结晶结构也密且热传导率高。
另外，HAZ的长度也可以通过使通电时间一定而改变火花电流、或使火花电流一定而改变通电时间、或使两者都改变来改变HAZ的长度。并且，为了改变毛细管的散热性，也可以尝试进行材料的选择或使冷却或保温性能另外依赖于机械方式。上述情况可通过溶化时的能源量、之后的冷却速度来调节。
如图4(C)所示，可知若缩短HAZ，则环路高度也缩短。这不能一概而论，但也可以说明如下情况。即，如果准备材料相同且HAZ的长度不同的金属细线，则可认为HAZ长的一方的环路高度增高。即，若较硬则难以产生加工褶皱，与其相应地导致高度变高，这种情况可作为一个原因而考虑。
在此，由于金属细线71被分为作为硬质部的再结晶部和比上述再结晶部软的非再结晶部这两个区域，因此，将两者的边界设为Z而进行说明。作为极端的例子，准备20cm的由纤维构成的装订线(綴り紐)，自右端使粘接剂浸渍5cm。即，准备右侧5cm硬而左侧15cm软这种状态的线，若提起软的部分的线，则在其边界Z可能弯折。另外，由于是金属细线，因此可塑性变形，故虽然接近Z但在其附近容易弯折。
实际上该Z部分位于何处，若观察其位置，则成为图2所示的箭头。即，箭头A的部分为再结晶部(硬质部)，Z的位置为粗线CR1或CR2。之所以这样是因为，由于通过后述的毛细管72形成第一曲折部59，因此，第一曲折部59相比边界Z稍向第二接合点侧偏移。换言之，金属细线51的边界Z的位置优选设置于第一曲折部59或比第一曲折部59更靠近半导体芯片侧。
这样，若在相比边界向第二接合点侧偏移的软的部分设置第一曲折部59，则该加工中使用的外力(应力)小即可，向第一接合点的应力小即可，从而可靠性提高。
无论哪种情况，都由硬质的再结晶部形成弯曲部57，在该弯曲部57的另一端形成曲折部59，由此，可使第二延伸部60、第三延伸部62位于顶部58的下方。
图5表示毛细管150的轨迹，其结果是，图6表示所形成的金属细线的形状。
1、如图5所示，毛细管150例如与半导体芯片的接合垫进行第一接合后，向右斜上方延伸，之后经由曲折部80构成一定的角度而向左斜上方移动。由此，如图6(A)所示，金属细线形成向右凸出的抛物线。
2、如图5所示，在经由曲折部81向右斜上方移动后，经由曲折部82向下方移动，进而经由曲折部82′向左斜上方移动。在此，曲折部82、82′的间隔非常短。其结果如图6(B)所示，金属细线在弯曲部的另一端经由曲折部82描绘直线的第二延伸部，呈现宛如鱼钩的形状。
3、如图5所示，在延长直线部分的长度的状态下如箭头83那样下降。
由此，如图6(C)所示，向左斜上方提起的端部下降，形成如图2所示的形状。
如以上说明，通过设置如鱼钩那样的弯曲部和直线状的延伸部，从而由弯曲部来确定顶部。因此，若尽可能地减小该弯曲部，则可以使顶部更低。
图3(A)是将该鱼钩形状的金属线环路适用于采用了引线架的封装的图。在岛部31上固定有半导体芯片32，在岛部31的附近配置有一端靠近配置的内引线33。而且，形成金属细线35，该金属细线35将半导体芯片32的接合垫34进行第一接合，并将内引线33进行第二接合。而且，设置有将岛部表面、半导体芯片、金属细线及内引线密封的树脂36。
金属细线35为图2的形状，由于可将金属线环路的高度设定得低，因此可减薄封装厚度。
图3(B)是同样地将该鱼钩形状的金属线环路适用于陶瓷基板的图。层叠有由氧化铝构成的陶瓷基板40、41。下方的陶瓷基板40的中央成为半导体芯片42的配置区域，而上方的陶瓷基板41不设置半导体芯片。在该配置区域设有绝缘性或导电性的粘接剂，将半导体芯片42固定。另外，上方的陶瓷基板41位于半导体芯片42的配置区域周围，且在半导体芯片42的配置区域周围设置有电极43。在此，通过自下方烧结Ni、Au，形成有电极43。另外，在该电极43的下方设有通孔44，在此埋入有W(钨)等金属。该W在下方的陶瓷基板40的端部露出，以覆盖W的背面和侧部的方式形成有由Au构成的电极45。
另外，半导体芯片42的接合垫和电极43通过本发明的金属细线连接。这样，金属细线为图2的形状，由于可以将金属线环路的高度设定得低，故可减薄封装厚度。在此，由于层叠有两片的陶瓷基板向上方稍微凸出地鼓起，因此，半导体芯片表面被设定在电极43的下方。

Claims (10)

1、一种半导体装置，其至少具有：具有接合垫的半导体芯片；配置于所述半导体芯片周围的电极；将所述接合垫和所述电极电连接的金属细线，该半导体装置的特征在于，
所述金属细线包含：一端与所述接合垫连接且顶部向上方弯曲的弯曲部；经由曲折部与所述弯曲部连续且朝向所述电极直线延伸的延伸部。
2、一种半导体装置，其至少具有：具有接合垫的半导体芯片；配置于所述半导体芯片周围的电极；将所述接合垫和所述电极电连接的金属细线，该半导体装置的特征在于，
所述金属细线包含：一端与所述接合垫连接且顶部向上方弯曲的第一延伸部；经由曲折部与所述第一延伸部连续且朝向所述电极直线延伸的第二延伸部；从所述第二延伸部的端部朝向所述电极下降的第三延伸部。
3、如权利要求1所述的半导体装置，其特征在于，从所述电极的表面到弯曲部顶部的高度为70μm以下。
4、如权利要求2所述的半导体装置，其特征在于，从所述电极的表面到所述第一延伸部顶部的高度为70μm以下。
5、如权利要求1或2所述的半导体装置，其特征在于，所述金属细线由硬质部及软质部这两个区域构成，所述硬质部和所述软质部的边界设于所述曲折部或比所述曲折部更靠近所述半导体芯片侧。
6、如权利要求2所述的半导体装置，其特征在于，所述第二延伸部和所述第三延伸部的边界设于与所述顶部同等高度的位置或设于顶部的下方。
7、如权利要求1或2所述的半导体装置，其特征在于，
所述半导体芯片安装于由陶瓷基板、印刷线路板、柔性基板或硅插入板构成的安装基板上，
所述电极由设于所述安装基板上面的导电图案构成，且设有用于对整体进行密封的树脂。
8、如权利要求1或2所述的半导体装置，其特征在于，
设有将所述半导体芯片、所述电极及所述金属细线密封的树脂，所述电极由导电板构成，从所述树脂露出到外部。
9、如权利要求1所述的半导体装置，其特征在于，所述弯曲部的轨迹呈现出圆周的一部分或椭圆的一部分。
10、一种半导体装置的制造方法，使用接合装置并使用金属细线将半导体芯片和配置于所述半导体芯片周围的电极电连接，该接合装置至少具有毛细管、位于所述毛细管的端部附近的火花装置及紧固件，该半导体装置的制造方法的特征在于，具备如下工序：
在利用所述火花装置在所述毛细管的端部形成金属球时，通过控制所述火花装置中流动的电流的时间，控制由从所述金属球延伸的金属细线的再结晶部分构成的硬质部的长度的工序；
将所述金属球与所述半导体芯片的接合垫连接的工序；
以使用所述毛细管形成第一延伸部、曲折部及第二延伸部的方式使与所述金属球一体的金属细线曲折的工序，该第一延伸部为描绘出将顶部向上方弯曲的轨迹的弯曲部，该曲折部设于所述第一延伸部的终端部，该第二延伸部朝向所述电极直线状延伸；
在使所述金属细线曲折的工序中，所述硬质部的终端区域位于所述曲折部或比所述曲折部更靠近所述半导体芯片侧。
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