CN101627146A - 用阴极溅射制作方向层的方法及其实施装置 - Google Patents

用阴极溅射制作方向层的方法及其实施装置 Download PDF

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Publication number
CN101627146A
CN101627146A CN200780049142A CN200780049142A CN101627146A CN 101627146 A CN101627146 A CN 101627146A CN 200780049142 A CN200780049142 A CN 200780049142A CN 200780049142 A CN200780049142 A CN 200780049142A CN 101627146 A CN101627146 A CN 101627146A
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CN
China
Prior art keywords
substrate surface
plate
target
collimator
nominal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN200780049142A
Other languages
English (en)
Chinese (zh)
Inventor
H·罗尔曼
H·弗里德利
J·韦查特
S·卡德莱克
M·杜布斯
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
OC Oerlikon Balzers AG
Original Assignee
OC Oerlikon Balzers AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by OC Oerlikon Balzers AG filed Critical OC Oerlikon Balzers AG
Publication of CN101627146A publication Critical patent/CN101627146A/zh
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
    • G11B5/851—Coating a support with a magnetic layer by sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3447—Collimators, shutters, apertures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/22—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using physical deposition, e.g. vacuum deposition or sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0468—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
CN200780049142A 2007-01-02 2007-12-24 用阴极溅射制作方向层的方法及其实施装置 Pending CN101627146A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US88308607P 2007-01-02 2007-01-02
US60/883,086 2007-01-02

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN201210088822.0A Division CN102747330B (zh) 2007-01-02 2007-12-24 用阴极溅射制作方向层的方法及其实施装置

Publications (1)

Publication Number Publication Date
CN101627146A true CN101627146A (zh) 2010-01-13

Family

ID=39144429

Family Applications (2)

Application Number Title Priority Date Filing Date
CN200780049142A Pending CN101627146A (zh) 2007-01-02 2007-12-24 用阴极溅射制作方向层的方法及其实施装置
CN201210088822.0A Expired - Fee Related CN102747330B (zh) 2007-01-02 2007-12-24 用阴极溅射制作方向层的方法及其实施装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN201210088822.0A Expired - Fee Related CN102747330B (zh) 2007-01-02 2007-12-24 用阴极溅射制作方向层的方法及其实施装置

Country Status (7)

Country Link
US (1) US9587306B2 (enExample)
EP (2) EP2106457A1 (enExample)
JP (1) JP5185285B2 (enExample)
KR (1) KR101761401B1 (enExample)
CN (2) CN101627146A (enExample)
TW (1) TWI457453B (enExample)
WO (1) WO2008080244A1 (enExample)

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WO2012003994A1 (en) 2010-07-09 2012-01-12 Oc Oerlikon Balzers Ag Magnetron sputtering apparatus
CN103147055A (zh) * 2013-03-04 2013-06-12 电子科技大学 一种直列多靶磁控溅射镀膜装置
DE102014108348A1 (de) * 2014-06-13 2015-12-17 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer Beschichtung sowie optoelektronisches Halbleiterbauteil mit einer Beschichtung
US9887073B2 (en) * 2015-02-13 2018-02-06 Taiwan Semiconductor Manufacturing Co., Ltd. Physical vapor deposition system and physical vapor depositing method using the same
US9922809B2 (en) * 2015-10-14 2018-03-20 Qorvo Us, Inc. Deposition system for growth of inclined c-axis piezoelectric material structures
US10866216B2 (en) 2015-12-15 2020-12-15 Qorvo Biotechnologies, Llc Temperature compensation and operational configuration for bulk acoustic wave resonator devices
CN110785825B (zh) * 2017-04-27 2023-06-23 瑞士艾发科技 软磁性多层件沉积设备、制造磁性多层件的方法和磁性多层件
CN111699543B (zh) 2018-02-13 2024-12-13 瑞士艾发科技 用于磁控管溅射的方法和装置
US11381212B2 (en) 2018-03-21 2022-07-05 Qorvo Us, Inc. Piezoelectric bulk layers with tilted c-axis orientation and methods for making the same
US11824511B2 (en) 2018-03-21 2023-11-21 Qorvo Us, Inc. Method for manufacturing piezoelectric bulk layers with tilted c-axis orientation
US10998209B2 (en) 2019-05-31 2021-05-04 Applied Materials, Inc. Substrate processing platforms including multiple processing chambers
US11401601B2 (en) 2019-09-13 2022-08-02 Qorvo Us, Inc. Piezoelectric bulk layers with tilted c-axis orientation and methods for making the same
US12080571B2 (en) 2020-07-08 2024-09-03 Applied Materials, Inc. Substrate processing module and method of moving a workpiece
US11817331B2 (en) 2020-07-27 2023-11-14 Applied Materials, Inc. Substrate holder replacement with protective disk during pasting process
US11749542B2 (en) 2020-07-27 2023-09-05 Applied Materials, Inc. Apparatus, system, and method for non-contact temperature monitoring of substrate supports
US11600507B2 (en) 2020-09-09 2023-03-07 Applied Materials, Inc. Pedestal assembly for a substrate processing chamber
US11610799B2 (en) 2020-09-18 2023-03-21 Applied Materials, Inc. Electrostatic chuck having a heating and chucking capabilities
US12195314B2 (en) 2021-02-02 2025-01-14 Applied Materials, Inc. Cathode exchange mechanism to improve preventative maintenance time for cluster system
US11674227B2 (en) 2021-02-03 2023-06-13 Applied Materials, Inc. Symmetric pump down mini-volume with laminar flow cavity gas injection for high and low pressure
US12002668B2 (en) 2021-06-25 2024-06-04 Applied Materials, Inc. Thermal management hardware for uniform temperature control for enhanced bake-out for cluster tool

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5415753A (en) * 1993-07-22 1995-05-16 Materials Research Corporation Stationary aperture plate for reactive sputter deposition
KR970003828B1 (ko) * 1993-12-15 1997-03-22 현대전자산업 주식회사 콜리메이터
US5958193A (en) * 1994-02-01 1999-09-28 Vlsi Technology, Inc. Sputter deposition with mobile collimator
JPH07335553A (ja) * 1994-06-08 1995-12-22 Tel Varian Ltd 処理装置および処理方法
JP3545050B2 (ja) * 1994-06-28 2004-07-21 株式会社アルバック スパッタリング装置、及びスパッタリング薄膜生産方法
US5616218A (en) 1994-09-12 1997-04-01 Matereials Research Corporation Modification and selection of the magnetic properties of magnetic recording media through selective control of the crystal texture of the recording layer
US5885425A (en) * 1995-06-06 1999-03-23 International Business Machines Corporation Method for selective material deposition on one side of raised or recessed features
US5650052A (en) 1995-10-04 1997-07-22 Edelstein; Sergio Variable cell size collimator
JPH11200029A (ja) * 1998-01-13 1999-07-27 Victor Co Of Japan Ltd スパッタリング装置
US6482301B1 (en) 1998-06-04 2002-11-19 Seagate Technology, Inc. Target shields for improved magnetic properties of a recording medium
US7294242B1 (en) * 1998-08-24 2007-11-13 Applied Materials, Inc. Collimated and long throw magnetron sputtering of nickel/iron films for magnetic recording head applications
EP1297542B1 (de) 2000-07-06 2013-02-20 OC Oerlikon Balzers AG Anordnung zur ausrichtung der magnetisierungsrichtung magnetischer schichten
SG126681A1 (en) * 2001-07-25 2006-11-29 Inst Data Storage Oblique deposition apparatus
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US6743340B2 (en) 2002-02-05 2004-06-01 Applied Materials, Inc. Sputtering of aligned magnetic materials and magnetic dipole ring used therefor
JP2007273490A (ja) * 2004-03-30 2007-10-18 Renesas Technology Corp 半導体集積回路装置の製造方法
DE102006003847B4 (de) * 2006-01-26 2011-08-18 Siemens AG, 80333 Verfahren und Vorrichtung zum Herstellen eines polykristallinen Keramikfilms auf einem Substrat
JP4673779B2 (ja) * 2006-03-24 2011-04-20 ダブリュディ・メディア・シンガポール・プライベートリミテッド 磁気記録媒体の製造方法及び成膜装置

Also Published As

Publication number Publication date
WO2008080244A1 (de) 2008-07-10
EP2106457A1 (de) 2009-10-07
TWI457453B (zh) 2014-10-21
JP2010514940A (ja) 2010-05-06
KR101761401B1 (ko) 2017-07-25
JP5185285B2 (ja) 2013-04-17
CN102747330A (zh) 2012-10-24
KR20090096617A (ko) 2009-09-11
US20090134011A1 (en) 2009-05-28
CN102747330B (zh) 2015-01-28
TW200848533A (en) 2008-12-16
EP2463401A1 (de) 2012-06-13
US9587306B2 (en) 2017-03-07
EP2463401B1 (de) 2013-07-24

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Application publication date: 20100113