CN101615653B - 磁阻效应元件的制造方法以及制造设备 - Google Patents

磁阻效应元件的制造方法以及制造设备 Download PDF

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CN101615653B
CN101615653B CN2009101467886A CN200910146788A CN101615653B CN 101615653 B CN101615653 B CN 101615653B CN 2009101467886 A CN2009101467886 A CN 2009101467886A CN 200910146788 A CN200910146788 A CN 200910146788A CN 101615653 B CN101615653 B CN 101615653B
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film
layer
mgo
substrate
forming
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CN101615653A (zh
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永峰佳纪
恒川孝二
D·D·贾亚普拉维拉
前原大树
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Canon Anelva Corp
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  • Mram Or Spin Memory Techniques (AREA)
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CN2009101467886A 2006-03-03 2007-02-26 磁阻效应元件的制造方法以及制造设备 Active CN101615653B (zh)

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JP2006-058748 2006-03-03
JP2006058748 2006-03-03
JP2006058748 2006-03-03
JP2007-034686 2007-02-15
JP2007034686A JP4782037B2 (ja) 2006-03-03 2007-02-15 磁気抵抗効果素子の製造方法及び製造装置
JP2007034686 2007-02-15

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CN101615653B true CN101615653B (zh) 2012-07-18

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Families Citing this family (12)

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WO2011093334A1 (ja) * 2010-01-26 2011-08-04 キヤノンアネルバ株式会社 成膜方法、成膜装置、および該成膜装置の制御装置
JP5998654B2 (ja) 2012-05-31 2016-09-28 東京エレクトロン株式会社 真空処理装置、真空処理方法及び記憶媒体
WO2014024358A1 (ja) * 2012-08-10 2014-02-13 キヤノンアネルバ株式会社 トンネル磁気抵抗素子の製造装置
US9461242B2 (en) 2013-09-13 2016-10-04 Micron Technology, Inc. Magnetic memory cells, methods of fabrication, semiconductor devices, memory systems, and electronic systems
US9608197B2 (en) 2013-09-18 2017-03-28 Micron Technology, Inc. Memory cells, methods of fabrication, and semiconductor devices
KR101813420B1 (ko) * 2013-10-30 2017-12-28 도쿄엘렉트론가부시키가이샤 성막 장치 및 성막 방법
US10454024B2 (en) 2014-02-28 2019-10-22 Micron Technology, Inc. Memory cells, methods of fabrication, and memory devices
US9281466B2 (en) 2014-04-09 2016-03-08 Micron Technology, Inc. Memory cells, semiconductor structures, semiconductor devices, and methods of fabrication
US9349945B2 (en) 2014-10-16 2016-05-24 Micron Technology, Inc. Memory cells, semiconductor devices, and methods of fabrication
US9768377B2 (en) 2014-12-02 2017-09-19 Micron Technology, Inc. Magnetic cell structures, and methods of fabrication
US10439131B2 (en) 2015-01-15 2019-10-08 Micron Technology, Inc. Methods of forming semiconductor devices including tunnel barrier materials
CN110565059B (zh) * 2019-09-10 2021-09-17 天津大学 一种具有室温隧道磁电阻效应的氧化钛基纳米颗粒复合薄膜的制备方法及装置

Family Cites Families (10)

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JPH0314227A (ja) * 1989-06-13 1991-01-22 Sharp Corp 半導体装置の製造方法
JPH0397855A (ja) * 1989-09-07 1991-04-23 Shimadzu Corp スパッタリング装置
JPH0499271A (ja) * 1990-08-10 1992-03-31 Olympus Optical Co Ltd 多層薄膜の作製方法およびその装置
JP3021601B2 (ja) * 1990-10-22 2000-03-15 神島化学工業株式会社 ＭｇＯターゲット
JPH07180047A (ja) * 1993-12-24 1995-07-18 Matsushita Electric Ind Co Ltd 強誘電体薄膜素子の製造方法及び製造装置
JPH0949075A (ja) * 1995-08-10 1997-02-18 Sony Corp スパッタ装置
JPH11152564A (ja) * 1997-11-17 1999-06-08 Murata Mfg Co Ltd プリスパッタ方法および装置
JP2003069112A (ja) * 2001-08-28 2003-03-07 Nec Corp 強磁性トンネル接合素子の製造方法
US7884403B2 (en) * 2004-03-12 2011-02-08 Japan Science And Technology Agency Magnetic tunnel junction device and memory device including the same
JP2005298894A (ja) * 2004-04-12 2005-10-27 Fujitsu Ltd ターゲットのクリーニング方法及び物理的堆積装置

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CN101615653A (zh) 2009-12-30
JP2008172266A (ja) 2008-07-24
JP2009065181A (ja) 2009-03-26
CN101395732A (zh) 2009-03-25
JP4679595B2 (ja) 2011-04-27
JP5260225B2 (ja) 2013-08-14

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