CN101595567A - 半导体装置和显示装置 - Google Patents

半导体装置和显示装置 Download PDF

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Publication number
CN101595567A
CN101595567A CNA200780049739XA CN200780049739A CN101595567A CN 101595567 A CN101595567 A CN 101595567A CN A200780049739X A CNA200780049739X A CN A200780049739XA CN 200780049739 A CN200780049739 A CN 200780049739A CN 101595567 A CN101595567 A CN 101595567A
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CN
China
Prior art keywords
film transistor
thin film
display device
organic
electrode
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Pending
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CNA200780049739XA
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English (en)
Chinese (zh)
Inventor
八木巖
汤本昭
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Sony Corp
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Sony Corp
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Publication of CN101595567A publication Critical patent/CN101595567A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/126—Shielding, e.g. light-blocking means over the TFTs
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136218—Shield electrodes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H10K19/10—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00 comprising field-effect transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/125—Active-matrix OLED [AMOLED] displays including organic TFTs [OTFT]
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
    • G02F2202/02—Materials and properties organic material

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
  • Thin Film Transistor (AREA)
CNA200780049739XA 2007-01-10 2007-12-26 半导体装置和显示装置 Pending CN101595567A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007001930A JP4591451B2 (ja) 2007-01-10 2007-01-10 半導体装置および表示装置
JP001930/2007 2007-01-10

Publications (1)

Publication Number Publication Date
CN101595567A true CN101595567A (zh) 2009-12-02

Family

ID=39608593

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA200780049739XA Pending CN101595567A (zh) 2007-01-10 2007-12-26 半导体装置和显示装置

Country Status (6)

Country Link
US (1) US20100176381A1 (enExample)
JP (1) JP4591451B2 (enExample)
KR (1) KR101422164B1 (enExample)
CN (1) CN101595567A (enExample)
TW (1) TW200843117A (enExample)
WO (1) WO2008084697A1 (enExample)

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102385214A (zh) * 2010-09-01 2012-03-21 乐金显示有限公司 电泳显示装置及其制造方法
CN102682697A (zh) * 2011-03-10 2012-09-19 精工爱普生株式会社 电光学装置以及电子设备
CN102956824A (zh) * 2011-08-25 2013-03-06 索尼公司 电子装置和半导体基板
CN104064581A (zh) * 2013-03-22 2014-09-24 精工爱普生株式会社 显示装置及电子设备
CN104216190A (zh) * 2014-08-28 2014-12-17 京东方科技集团股份有限公司 阵列基板及其制作方法、显示装置
CN104465675A (zh) * 2014-12-31 2015-03-25 深圳市华星光电技术有限公司 薄膜晶体管阵列基板、液晶面板以及液晶显示器
CN105321986A (zh) * 2014-08-01 2016-02-10 乐金显示有限公司 有机发光显示装置
US9515191B2 (en) 2013-06-07 2016-12-06 Chengdu Boe Optoelectronics Technology Co., Ltd. Thin-film field effect transistor, driving method thereof, array substrate, display device, and electronic product
CN106328812A (zh) * 2015-07-06 2017-01-11 元太科技工业股份有限公司 有源元件及其制作方法
CN107452773A (zh) * 2016-05-31 2017-12-08 乐金显示有限公司 有机发光显示装置
CN113299747A (zh) * 2021-05-21 2021-08-24 合肥京东方卓印科技有限公司 显示面板及其制作方法和显示装置
CN114509903A (zh) * 2022-02-10 2022-05-17 武汉华星光电技术有限公司 显示面板
WO2022151576A1 (zh) * 2021-01-15 2022-07-21 武汉华星光电技术有限公司 显示面板
US12499833B2 (en) 2011-03-10 2025-12-16 Seiko Epson Corporation Electro-optical device and electronic apparatus

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JP2010079196A (ja) * 2008-09-29 2010-04-08 Dainippon Printing Co Ltd タイリング用トランジスタアレイ、トランジスタアレイ、および表示装置
JP2010085695A (ja) * 2008-09-30 2010-04-15 Toshiba Mobile Display Co Ltd アクティブマトリクス型表示装置
TWI469224B (zh) * 2008-10-20 2015-01-11 Ind Tech Res Inst 有機薄膜電晶體及其製造方法
KR101812563B1 (ko) * 2008-12-19 2017-12-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 전자기기
US20100177396A1 (en) * 2009-01-13 2010-07-15 Craig Lin Asymmetrical luminance enhancement structure for reflective display devices
JP5509629B2 (ja) * 2009-03-09 2014-06-04 コニカミノルタ株式会社 薄膜トランジスタアレイの製造方法、及び薄膜トランジスタアレイ
US8714780B2 (en) * 2009-04-22 2014-05-06 Sipix Imaging, Inc. Display devices with grooved luminance enhancement film
US8797633B1 (en) * 2009-07-23 2014-08-05 Sipix Imaging, Inc. Display device assembly and manufacture thereof
JP5440031B2 (ja) * 2009-08-28 2014-03-12 コニカミノルタ株式会社 薄膜トランジスタアレイの製造方法
KR101746198B1 (ko) 2009-09-04 2017-06-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시장치 및 전자기기
WO2011158424A1 (ja) * 2010-06-15 2011-12-22 シャープ株式会社 薄膜トランジスタ基板及び液晶表示装置
US9437743B2 (en) 2010-10-07 2016-09-06 Semiconductor Energy Laboratory Co., Ltd. Thin film element, semiconductor device, and method for manufacturing the same
US20150085239A1 (en) * 2012-04-27 2015-03-26 Sharp Kabushiki Kaisha Liquid crystal display element and liquid crystal display device
JP6015115B2 (ja) * 2012-05-15 2016-10-26 セイコーエプソン株式会社 電気光学装置および電子機器
TWI559064B (zh) 2012-10-19 2016-11-21 Japan Display Inc Display device
JP6228735B2 (ja) * 2013-02-21 2017-11-08 株式会社ジャパンディスプレイ 表示装置
KR101994332B1 (ko) * 2012-10-30 2019-07-01 삼성디스플레이 주식회사 유기 발광 트랜지스터 및 이를 포함하는 표시 장치
JP6221413B2 (ja) * 2013-06-27 2017-11-01 セイコーエプソン株式会社 発光装置および電子機器
JP5999201B2 (ja) * 2015-01-13 2016-09-28 セイコーエプソン株式会社 電気光学装置および電子機器
JP5930082B2 (ja) * 2015-01-13 2016-06-08 セイコーエプソン株式会社 電気光学装置および電子機器
JP5999202B2 (ja) * 2015-01-13 2016-09-28 セイコーエプソン株式会社 電気光学装置および電子機器
KR102422108B1 (ko) * 2015-01-20 2022-07-19 삼성디스플레이 주식회사 유기 발광 표시 장치
CN104793416B (zh) * 2015-04-14 2018-02-16 京东方科技集团股份有限公司 一种阵列基板及其制作方法和显示面板
CN104992948B (zh) * 2015-06-03 2018-07-06 京东方科技集团股份有限公司 一种薄膜晶体管、阵列基板及其制作方法
TWI570976B (zh) * 2015-07-06 2017-02-11 元太科技工業股份有限公司 主動元件及其製作方法
JP6245326B2 (ja) * 2016-09-01 2017-12-13 セイコーエプソン株式会社 電気光学装置および電子機器
WO2019078267A1 (ja) * 2017-10-19 2019-04-25 凸版印刷株式会社 有機薄膜トランジスタ、その製造方法、アクティブマトリクスアレイおよび画像表示装置
JP6477838B2 (ja) * 2017-11-16 2019-03-06 セイコーエプソン株式会社 電気光学装置および電子機器
JP7589093B2 (ja) * 2021-03-31 2024-11-25 株式会社ジャパンディスプレイ 電波反射板
KR20240107758A (ko) * 2022-12-30 2024-07-09 엘지디스플레이 주식회사 표시 장치

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JP4434563B2 (ja) * 2002-09-12 2010-03-17 パイオニア株式会社 有機ｅｌ表示装置の製造方法

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Cited By (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102385214A (zh) * 2010-09-01 2012-03-21 乐金显示有限公司 电泳显示装置及其制造方法
CN106097975B (zh) * 2011-03-10 2018-11-02 精工爱普生株式会社 电光学装置以及电子设备
US10546533B2 (en) 2011-03-10 2020-01-28 Seiko Epson Corporation Electro-optical device and electronic apparatus
US10283049B2 (en) 2011-03-10 2019-05-07 Seiko Epson Corporation Electro-optical device and electronic apparatus
US12499833B2 (en) 2011-03-10 2025-12-16 Seiko Epson Corporation Electro-optical device and electronic apparatus
US12175934B2 (en) 2011-03-10 2024-12-24 Seiko Epson Corporation Electro-optical device and electronic apparatus
US11830430B2 (en) 2011-03-10 2023-11-28 Seiko Epson Corporation Electro-optical device and electronic apparatus
CN102682697B (zh) * 2011-03-10 2016-08-03 精工爱普生株式会社 电光学装置以及电子设备
CN105976762A (zh) * 2011-03-10 2016-09-28 精工爱普生株式会社 电光学装置以及电子设备
CN106097975A (zh) * 2011-03-10 2016-11-09 精工爱普生株式会社 电光学装置以及电子设备
CN102682697A (zh) * 2011-03-10 2012-09-19 精工爱普生株式会社 电光学装置以及电子设备
US10062329B2 (en) 2011-03-10 2018-08-28 Seiko Epson Corporation Electro-optical device and electronic apparatus
US11636807B2 (en) 2011-03-10 2023-04-25 Seiko Epson Corporation Electro-optical device and electronic apparatus
US11217167B2 (en) 2011-03-10 2022-01-04 Seiko Epson Corporation Electro-optical device and electronic apparatus
CN105976762B (zh) * 2011-03-10 2019-12-06 精工爱普生株式会社 电光学装置以及电子设备
US9953572B2 (en) 2011-03-10 2018-04-24 Seiko Epson Corporation Electro-optical device and electronic apparatus
CN102956824B (zh) * 2011-08-25 2016-12-21 索尼公司 电子装置和半导体基板
CN102956824A (zh) * 2011-08-25 2013-03-06 索尼公司 电子装置和半导体基板
CN104064581B (zh) * 2013-03-22 2018-10-12 精工爱普生株式会社 显示装置及电子设备
CN104064581A (zh) * 2013-03-22 2014-09-24 精工爱普生株式会社 显示装置及电子设备
US9515191B2 (en) 2013-06-07 2016-12-06 Chengdu Boe Optoelectronics Technology Co., Ltd. Thin-film field effect transistor, driving method thereof, array substrate, display device, and electronic product
CN105321986A (zh) * 2014-08-01 2016-02-10 乐金显示有限公司 有机发光显示装置
CN105321986B (zh) * 2014-08-01 2019-10-18 乐金显示有限公司 有机发光显示装置
CN104216190A (zh) * 2014-08-28 2014-12-17 京东方科技集团股份有限公司 阵列基板及其制作方法、显示装置
CN104465675B (zh) * 2014-12-31 2017-08-25 深圳市华星光电技术有限公司 薄膜晶体管阵列基板、液晶面板以及液晶显示器
CN104465675A (zh) * 2014-12-31 2015-03-25 深圳市华星光电技术有限公司 薄膜晶体管阵列基板、液晶面板以及液晶显示器
CN106328812B (zh) * 2015-07-06 2019-10-18 元太科技工业股份有限公司 有源元件及其制作方法
CN106328812A (zh) * 2015-07-06 2017-01-11 元太科技工业股份有限公司 有源元件及其制作方法
CN107452773A (zh) * 2016-05-31 2017-12-08 乐金显示有限公司 有机发光显示装置
WO2022151576A1 (zh) * 2021-01-15 2022-07-21 武汉华星光电技术有限公司 显示面板
US11796874B2 (en) 2021-01-15 2023-10-24 Wuhan China Star Optoelectronics Technology Co., Ltd. Display panel
US12092933B2 (en) 2021-01-15 2024-09-17 Wuhan China Star Optoelectronics Technology Co., Ltd. Display panel
CN113299747A (zh) * 2021-05-21 2021-08-24 合肥京东方卓印科技有限公司 显示面板及其制作方法和显示装置
CN114509903B (zh) * 2022-02-10 2024-02-13 武汉华星光电技术有限公司 显示面板
US12153316B2 (en) 2022-02-10 2024-11-26 Wuhan China Star Optoelectronics Technology Co., Ltd. Display panel
CN114509903A (zh) * 2022-02-10 2022-05-17 武汉华星光电技术有限公司 显示面板

Also Published As

Publication number Publication date
TWI366273B (enExample) 2012-06-11
JP2008171907A (ja) 2008-07-24
KR20090101225A (ko) 2009-09-24
KR101422164B1 (ko) 2014-07-22
TW200843117A (en) 2008-11-01
WO2008084697A1 (ja) 2008-07-17
JP4591451B2 (ja) 2010-12-01
US20100176381A1 (en) 2010-07-15

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Application publication date: 20091202