CN101558498A - 静电放电保护电路 - Google Patents

静电放电保护电路 Download PDF

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Publication number
CN101558498A
CN101558498A CNA2006800097161A CN200680009716A CN101558498A CN 101558498 A CN101558498 A CN 101558498A CN A2006800097161 A CNA2006800097161 A CN A2006800097161A CN 200680009716 A CN200680009716 A CN 200680009716A CN 101558498 A CN101558498 A CN 101558498A
Authority
CN
China
Prior art keywords
scr
coupled
tap
voltage potential
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA2006800097161A
Other languages
English (en)
Chinese (zh)
Inventor
彼得·万萨科尔
本杰明·万卡普
奥利弗·马瑞查尔
吉尔特·韦伯
史蒂文·辛吉斯
格尔德·沃蒙特
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sofics Bvba
Sarnoff Corp
Original Assignee
Sofics Bvba
Sarnoff Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sofics Bvba, Sarnoff Corp filed Critical Sofics Bvba
Publication of CN101558498A publication Critical patent/CN101558498A/zh
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/711—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using bipolar transistors as protective elements
    • H10D89/713—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using bipolar transistors as protective elements including a PNP transistor and a NPN transistor, wherein each of said transistors has its base region coupled to the collector region of the other transistor, e.g. silicon controlled rectifier [SCR] devices

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Emergency Protection Circuit Devices (AREA)
CNA2006800097161A 2005-03-30 2006-03-30 静电放电保护电路 Pending CN101558498A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US66644505P 2005-03-30 2005-03-30
US60/666,445 2005-03-30

Publications (1)

Publication Number Publication Date
CN101558498A true CN101558498A (zh) 2009-10-14

Family

ID=37906602

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA2006800097161A Pending CN101558498A (zh) 2005-03-30 2006-03-30 静电放电保护电路

Country Status (4)

Country Link
US (2) US20070002508A1 (enExample)
JP (1) JP2008538259A (enExample)
CN (1) CN101558498A (enExample)
WO (1) WO2007040612A2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104518777A (zh) * 2013-10-01 2015-04-15 德克萨斯仪器股份有限公司 减小输入/输出(io)驱动器的应力的方案

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7272802B2 (en) * 2005-05-11 2007-09-18 Lsi Corporation R-cells containing CDM clamps
US20080002321A1 (en) * 2006-06-29 2008-01-03 Bart Sorgeloos Electrostatic discharge protection of a clamp
KR100976410B1 (ko) 2008-05-28 2010-08-17 주식회사 하이닉스반도체 정전기 방전 장치
US7800128B2 (en) * 2008-06-12 2010-09-21 Infineon Technologies Ag Semiconductor ESD device and method of making same
US8379354B2 (en) * 2008-11-12 2013-02-19 United Microelectronics Corp. ESD protection circuitry with multi-finger SCRS
JP5595751B2 (ja) * 2009-03-11 2014-09-24 ルネサスエレクトロニクス株式会社 Ｅｓｄ保護素子
JP2010283182A (ja) * 2009-06-05 2010-12-16 Fujitsu Semiconductor Ltd 集積回路装置
US8228651B2 (en) * 2009-07-31 2012-07-24 Hynix Semiconductor Inc. ESD protection circuit
DE102009039247B9 (de) 2009-08-28 2012-01-26 Austriamicrosystems Ag Halbleiterkörper mit einer Anschlusszelle
DE102009061167B3 (de) * 2009-08-28 2015-03-05 Austriamicrosystems Ag Halbleiterkörper mit einer Anschlusszelle
US9041054B2 (en) 2010-02-22 2015-05-26 Sofics Bvba High holding voltage electrostatic discharge protection device
US8653557B2 (en) * 2010-02-22 2014-02-18 Sofics Bvba High holding voltage electrostatic discharge (ESD) device
US8659859B1 (en) * 2010-06-15 2014-02-25 Ambarella, Inc. Electrostatic discharge protection scheme for high-definition multimedia interface transmitters
US8456785B2 (en) 2010-10-25 2013-06-04 Infineon Technologies Ag Semiconductor ESD device and method
US8906751B2 (en) 2011-01-06 2014-12-09 International Business Machines Corporation Silicon controlled rectifiers (SCR), methods of manufacture and design structures
US9224724B2 (en) * 2012-05-30 2015-12-29 Texas Instruments Incorporated Mutual ballasting multi-finger bidirectional ESD device
US9882375B2 (en) 2013-03-15 2018-01-30 Sofics Bvba High holding voltage clamp
US11201466B2 (en) * 2018-07-12 2021-12-14 Globalfoundries U.S. Inc. Electrostatic discharge clamp structures
US11942473B2 (en) * 2022-06-14 2024-03-26 Analog Devices, Inc. Electrostatic discharge protection for high speed transceiver interface
US12484311B2 (en) * 2022-09-29 2025-11-25 Nxp B.V. ESD clamp circuit with vertical bipolar transistor
US12402416B2 (en) * 2023-09-25 2025-08-26 Taiwan Semiconductor Manufacturing Company, Ltd. Electrostatic discharge diodes with different sizes and methods of manufacturing thereof

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6621126B2 (en) * 2000-10-10 2003-09-16 Sarnoff Corporation Multifinger silicon controlled rectifier structure for electrostatic discharge protection
JP4005920B2 (ja) * 2001-03-16 2007-11-14 サーノフ コーポレーション ラッチアップ耐性のための高保持電流を有する静電放電保護構造
FR2838881B1 (fr) * 2002-04-22 2004-07-09 St Microelectronics Sa Dispositif de protection contre des decharges electrostatiques comprenant plusieurs thyristors
DE10230493B8 (de) * 2002-07-06 2004-10-21 Gkn Driveline International Gmbh Verfahren zum Herstellen von Klemmringen

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104518777A (zh) * 2013-10-01 2015-04-15 德克萨斯仪器股份有限公司 减小输入/输出(io)驱动器的应力的方案
CN104518777B (zh) * 2013-10-01 2019-05-03 德克萨斯仪器股份有限公司 减小输入/输出（io）驱动器的应力的方案

Also Published As

Publication number Publication date
US20090101938A1 (en) 2009-04-23
US20070002508A1 (en) 2007-01-04
US8143700B2 (en) 2012-03-27
JP2008538259A (ja) 2008-10-16
WO2007040612A3 (en) 2009-04-16
WO2007040612A9 (en) 2007-06-28
WO2007040612A2 (en) 2007-04-12

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C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication

Open date: 20091014