CN101548380B - 双芯片搭载型二极管 - Google Patents

双芯片搭载型二极管 Download PDF

Info

Publication number
CN101548380B
CN101548380B CN2008800009460A CN200880000946A CN101548380B CN 101548380 B CN101548380 B CN 101548380B CN 2008800009460 A CN2008800009460 A CN 2008800009460A CN 200880000946 A CN200880000946 A CN 200880000946A CN 101548380 B CN101548380 B CN 101548380B
Authority
CN
China
Prior art keywords
pin
diode
terminal board
chip
twin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2008800009460A
Other languages
English (en)
Other versions
CN101548380A (zh
Inventor
石田淳
滨野贤治
楠本雅之
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Onamba Co Ltd
Original Assignee
Onamba Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Onamba Co Ltd filed Critical Onamba Co Ltd
Publication of CN101548380A publication Critical patent/CN101548380A/zh
Application granted granted Critical
Publication of CN101548380B publication Critical patent/CN101548380B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49541—Geometry of the lead-frame
    • H01L23/49562—Geometry of the lead-frame for devices being provided for in H01L29/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49575—Assemblies of semiconductor devices on lead frames
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L24/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L24/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L24/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L24/41—Structure, shape, material or disposition of the strap connectors after the connecting process of a plurality of strap connectors
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
    • H02S40/00—Components or accessories in combination with PV modules, not provided for in groups H02S10/00 - H02S30/00
    • H02S40/30—Electrical components
    • H02S40/34—Electrical components comprising specially adapted electrical connection means to be structurally associated with the PV module, e.g. junction boxes
    • H02S40/345—Electrical components comprising specially adapted electrical connection means to be structurally associated with the PV module, e.g. junction boxes with cooling means associated with the electrical connection means, e.g. cooling means associated with or applied to the junction box
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/401—Disposition
    • H01L2224/40135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/40137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/401—Disposition
    • H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/40245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/40247—Connecting the strap to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48095—Kinked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
    • H01L2224/8434—Bonding interfaces of the connector
    • H01L2224/84345—Shape, e.g. interlocking features
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
    • H01L2224/848—Bonding techniques
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
    • H01L2224/848—Bonding techniques
    • H01L2224/84801—Soldering or alloying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
    • H01L2224/848—Bonding techniques
    • H01L2224/84899—Combinations of bonding methods provided for in at least two different groups from H01L2224/848 - H01L2224/84898
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Abstract

本发明提供一种二极管，即使在如设于户外的太阳能电池板用端子箱内那样的温度变化激烈的环境下使用，也不会丧失其功能。该二极管是取芯片搭载型二极管，其每一个芯片都具有用于与公共的端子板接合的引脚，其特征在于，具有在从各芯片引出到各引脚的接合的部分之间彼此电连接的结构。优选为电连接的结构通过与各引脚的一体成型而形成。

Description

双芯片搭载型二极管
技术领域
本发明涉及一种双芯片搭载型二极管，即使在因温度变化导致的端子板变形而在引脚的接合部分产生了缺陷的情况下也能够确保其性能。特别是，本发明的二极管适合于在温度变化显著的环境下使用的太阳能电池板用端子箱中的端子板电路中使用。
背景技术
对于二极管来说，通常为了在电路内发挥其功能，通过将二极管的引脚与端子板接合来电连接。
二极管向端子板的电连接在通常使用中采用牢固地连接，但是，对于太阳能电池板用端子箱内设置的端子板，由于在温度变化显著的环境中使用，因此，频繁地产生端子板的平面方向上的膨胀、收缩，因此，存在二极管的引脚向端子板的接合部分不能够承受这样频繁的变化而引起龟裂、致使接合部分容易剥离之类的问题。
尤其是，如专利文献1的太阳能电池板用端子箱具有为了提高二极管的散热效果而扩大的端子板，由于端子板的平面方向上的膨胀、收缩大量地传递给二极管的引脚和端子板的接合部分，因此，上述问题明显地显现出来。因此，寻求即使在这种环境中也能够使二极管在可靠性高的状态下起作用的方法。
专利文献1(日本)特开2005-251962号公报
发明内容
本发明是鉴于现有的这种技术现状而开发的，其目的在于，提供二极管、接合该二极管的端子板电路、以及包含该电路的太阳能电池板用端子箱，所述二极管即使在设于户外的太阳能电池板用端子箱内那样的温度变化激烈的环境下使用，其性能也不受损害。
为了实现上述目的，本发明者进行了专心研究，其结果发现，保持两个同极连接的引脚的双芯片搭载型二极管具有下述结构，即，即使在一方引脚的接合部分产生了缺陷时也能够通过另一个芯片发挥其作用，并且，即使产生了该缺陷时也可以在自各芯片引出到引脚的接合的部分之间彼此电连接，由此，能够确保二极管中的两个芯片的功能，并由此完成本发明。
即，本发明提供一种二极管，是双芯片搭载型二极管，其每个芯片都具有用于与公共的端子板接合的引脚，其特征在于，具有在从各芯片引出到各引脚的接合的部分之间彼此电连接的结构。本发明的二极管的优选方式中，电连接的结构通过与各引脚的一体成型而形成。
另外，本发明提供一种端子板电路，其包含上述二极管及端子板，二极管的各引脚与公共的端子板接合。本发明的端子板电路的优选方式中，端子板被扩大以使由二极管发生的热充分散热。
另外，本发明提供一种太阳能电池板用端子箱，其特征在于，含有上述端子板电路。
本发明的二极管为具有特别的构成的双芯片搭载型二极管，因此，即使在一方引脚的接合部分产生了缺陷的情况下，也能够不使性能降低而安全地确保其功能。另外，不仅是一方引脚的接合部分，而且即使在另一芯片产生了缺陷的情况下，也能够确保其功能。尤其是，本发明的二极管特别适于在温度变化激烈的太阳能电池板用端子箱中的端子板电路中使用。
附图说明
图1是以省略了覆盖绝缘树脂的状态概略性表示现有的双芯片搭载型二极管的图；
图2是以省略了覆盖绝缘树脂的状态概略性表示本发明的双芯片搭载型二极管之一例的图；
图3是以省略了覆盖绝缘树脂的状态概略性表示本发明的双芯片搭载型二极管之一例的图；
图4是以省略了覆盖绝缘树脂的状态概略性表示本发明的双芯片搭载型二极管之一例的图；
图5(a)是以省略了覆盖绝缘树脂的状态概略性示本发明的双芯片搭载型二极管之一例的图；
图5(b)是以不省略覆盖绝缘树脂的状态概略性表示本发明的双芯片搭载型二极管之一例的图；
图6(a)是以省略了覆盖绝缘树脂的状态概略性表示本发明的双芯片搭载型二极管之一例的图；
图6(b)是以不省略覆盖绝缘树脂的状态概略性表示本发明的双芯片搭载型二极管之一例的图。
具体实施方式
本发明的二极管为双芯片搭载型二极管，其搭载有两个芯片，且每个芯片都具有用于与公共的端子板接合的引脚。采用双芯片搭载型二极管是为了通过两个芯片来应对芯片的缺陷、以及通过两个引脚来应对引脚的接合部分的缺陷，而且，是寻求具有可同极连接的多个引脚的二极管的结果。因此，本发明的二极管的各引脚与通常的双芯片搭载型的使用方法不同，其与公共的同极端子板接合使用。
本发明的双芯片据载型二极管的特征在于，具有在从两个芯片分别引出到各引脚的接合部分之间彼此电连接的构造。引脚与端子板的接合可以通过现有的公知的方法进行，例如可以通过软钎焊、焊接、机械结合(夹入等)、及软钎焊和机械结合的组合来进行。
现有的双芯片搭载型二极管通常如图1的省略了覆盖绝缘树脂的概略图所示，在架体上分别独立地搭载有两个芯片，内部引脚及外部引脚从各芯片独立地引出到外部，通过外部引脚的前端与端子板接合。因此，当一方外部引脚的接合部分发生缺陷时，另一外部引脚的接合部分保留，从而由一个芯片维持二极管的功能，但由于只有一个芯片发挥功能，因此在性能方面不能满足要求。
与之相对，本发明的双芯片搭载型二极管例如图2的省略了覆盖绝缘树脂的概略图所示，内部引脚及外部引脚同样地从独立搭载于架体上的两个芯片引出到外部，通过外部引脚的前端与端子板接合，而从两个芯片引出的内部引脚按照彼此电连接的方式一体成型。因而，即使一方外部引脚的接合部分发生缺陷，由于电流还能够经由另一外部引脚从另一内部引脚流到发生了缺陷的一侧的内部引脚，因此，两个芯片有效地发挥作用，在性能方面不会产生问题。
图2中，在内部引脚间实现电连接，而如图3的概略图所示，本发明也可以具有在外部引脚间进行电连接的构成。另外，如图4的概略图所示，也可以通过接合线构成内部引脚的部分。另外，如图5及图6的概略图所示，引脚也可以不分开制作如内部引脚和外部引脚(参照图5(a)及图6(a))。另外，在包覆覆盖绝缘树脂时，引脚间的电连接构成可以从外部确认(参照图5(b))，也可以不从外部确认(参照图6(b))。总之，只要具有下述构成即可，即，在从各芯片引出到各引脚的接合部分之间彼此电连接，即使一方引脚的接合部分发生缺陷，来自端子板的电流也可以经由另一引脚传递到两芯片。
本发明的二极管可将其引脚与公共的端子板接合而构成端子板电路，此时，端子板能够扩大以将自二极管产生的热充分散热。这样形成的端子板电路尤其是在装入到温度变化激烈的环境下使用的太阳能电池板用端子箱内使用时发挥效果。
根据本发明的二极管，即使在温度变化激烈的环境下在引脚与端子板的接合部分发生缺陷，也能够按照满足功能要求的方式工作，因此，在太阳能电池板用端子箱内的端子板电路那样严酷的环境中极其有用。

Claims (5)

1.一种二极管，是双芯片搭载型二极管，在一个架体上搭载两个芯片，这些芯片的每一个都具有引脚，各引脚分别个别地接合于同极的公共的端子板，其中，具有在从各芯片引出到各引脚的接合的部分之间引脚彼此电连接的结构，使得即使在一方引脚向端子板的接合部分产生缺陷也通过另一引脚将来自端子板的电流传递到两个芯片。
2.如权利要求1所述的二极管，其特征在于，电连接的结构通过与各引脚的一体成型而形成。
3.一种端子板电路，其包含权利要求1或2所述的二极管及端子板，二极管的各引脚分别个别地与同极的公共的端子板接合，即使在一方引脚向端子板的接合部分产生缺陷也通过另一引脚将来自端子板的电流传递到两个芯片。
4.如权利要求3所述的端子板电路，其特征在于，端子板被扩大以使由二极管产生的热能够充分散热。
5.一种太阳能电池板用端子箱，含有权利要求3或4所述的端子板电路。
CN2008800009460A 2007-08-13 2008-01-25 双芯片搭载型二极管 Expired - Fee Related CN101548380B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP210589/2007 2007-08-13
JP2007210589A JP4167715B1 (ja) 2007-08-13 2007-08-13 ツインチップ搭載型ダイオード
PCT/JP2008/000094 WO2009022441A1 (ja) 2007-08-13 2008-01-25 ツインチップ搭載型ダイオード

Publications (2)

Publication Number Publication Date
CN101548380A CN101548380A (zh) 2009-09-30
CN101548380B true CN101548380B (zh) 2012-12-12

Family

ID=39985850

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2008800009460A Expired - Fee Related CN101548380B (zh) 2007-08-13 2008-01-25 双芯片搭载型二极管

Country Status (5)

Country Link
US (1) US8237065B2 (zh)
EP (1) EP2077579A4 (zh)
JP (1) JP4167715B1 (zh)
CN (1) CN101548380B (zh)
WO (1) WO2009022441A1 (zh)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013143519A (ja) 2012-01-12 2013-07-22 Fuji Electric Co Ltd 接続子および樹脂封止型半導体装置
CN108140631B (zh) * 2015-09-28 2021-02-05 三菱电机株式会社 半导体装置
CN205336219U (zh) * 2015-12-08 2016-06-22 泰科电子(上海)有限公司 光伏接线盒和二极管
CN105790704A (zh) * 2016-06-03 2016-07-20 浙江人和光伏科技有限公司 太阳能电池用接线盒
CN105871328A (zh) * 2016-06-03 2016-08-17 浙江人和光伏科技有限公司 一种太阳能电池用接线盒
US11107761B2 (en) * 2018-02-06 2021-08-31 Denso Corporation Semiconductor device
JP2019186403A (ja) 2018-04-11 2019-10-24 トヨタ自動車株式会社 半導体装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1753033A1 (en) * 2004-05-19 2007-02-14 Angel Co., Ltd.; Diode with lead terminal for solar cell

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH021862Y2 (zh) * 1985-12-06 1990-01-17
JPH0176059U (zh) * 1987-11-10 1989-05-23
JP3120575B2 (ja) * 1992-06-29 2000-12-25 富士電機株式会社 半導体装置
KR20000026245A (ko) * 1998-10-19 2000-05-15 윤종용 도선테
JP2001135847A (ja) * 1999-11-05 2001-05-18 Kanegafuchi Chem Ind Co Ltd 半導体装置及びこれを備えた端子ボックス
JP3871587B2 (ja) * 2002-03-18 2007-01-24 日本インター株式会社 樹脂封止型半導体装置
JP3744458B2 (ja) * 2002-04-10 2006-02-08 住友電装株式会社 太陽電池モジュール用端子ボックス装置
JP2004207618A (ja) * 2002-12-26 2004-07-22 Shindengen Electric Mfg Co Ltd 半導体装置
JP4056066B2 (ja) 2004-03-04 2008-03-05 オーナンバ株式会社 太陽電池パネル用端子ボックス
JP4515817B2 (ja) * 2004-05-18 2010-08-04 株式会社三社電機製作所 太陽電池モジュール接続具
KR101040335B1 (ko) * 2004-05-25 2011-06-10 키타니 덴기 가부시키가이샤 태양 전지 모듈용 단자 박스
JP2006165227A (ja) * 2004-11-15 2006-06-22 Oonanba Kk 太陽電池パネル用端子ボックス
US7906721B2 (en) * 2004-11-25 2011-03-15 Sansha Electric Manufacturing Company, Limited Solar cell module connector

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1753033A1 (en) * 2004-05-19 2007-02-14 Angel Co., Ltd.; Diode with lead terminal for solar cell

Also Published As

Publication number Publication date
WO2009022441A1 (ja) 2009-02-19
CN101548380A (zh) 2009-09-30
US20100084183A1 (en) 2010-04-08
EP2077579A1 (en) 2009-07-08
JP2009044107A (ja) 2009-02-26
JP4167715B1 (ja) 2008-10-22
US8237065B2 (en) 2012-08-07
EP2077579A4 (en) 2014-10-08

Similar Documents

Publication Publication Date Title
CN101548380B (zh) 双芯片搭载型二极管
CN101548394B (zh) 光伏模组及其应用
US7768123B2 (en) Stacked dual-die packages, methods of making, and systems incorporating said packages
CN1882224B (zh) 配线基板及其制造方法
CN100477207C (zh) 具有三维载体安装集成电路封装阵列的电子模块
CN100452396C (zh) 半导体装置及其制造方法
US20080138933A1 (en) Method of making semiconductor device
CN102403306B (zh) 发光二极管封装结构
US20070176297A1 (en) Reworkable stacked chip assembly
CN105789157A (zh) 具有低栅极驱动电感柔性板连接的功率半导体模块
CN108428685A (zh) 半导体装置
WO2002080272A3 (en) Insulated bond wire assembly process technology for integrated circuits
CN101814459A (zh) 半导体封装的安装结构及等离子体显示器件
JP2012186314A (ja) 太陽電池モジュール
CN101951725A (zh) 印刷电路板单元和电子装置
CN105814682A (zh) 半导体装置
CN101771011A (zh) 半导体装置
CN101296563A (zh) 电路板、电子组件及电路板组件
CN101937900A (zh) 一种微波毫米波电路
CN204144239U (zh) 一种等面积大功率裸芯片的叠层装配结构
CN106783773A (zh) 一种非绝缘双塔型二极管模块
CN102403294B (zh) 半导体器件
CN103219332A (zh) 一种光电元件
CN220796739U (zh) 多层基板的sip封装结构
CN102637611A (zh) 一种aap功率模块的制造方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20121212

Termination date: 20180125