CN101546704A - 衬底处理方法和衬底处理设备 - Google Patents

衬底处理方法和衬底处理设备 Download PDF

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Publication number
CN101546704A
CN101546704A CN200910130203A CN200910130203A CN101546704A CN 101546704 A CN101546704 A CN 101546704A CN 200910130203 A CN200910130203 A CN 200910130203A CN 200910130203 A CN200910130203 A CN 200910130203A CN 101546704 A CN101546704 A CN 101546704A
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CN
China
Prior art keywords
chemical solution
substrate
temperature
circulation
pure water
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN200910130203A
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English (en)
Chinese (zh)
Inventor
伊藤修
川口英彦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Electronics Corp
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Publication of CN101546704A publication Critical patent/CN101546704A/zh
Pending legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67242Apparatus for monitoring, sorting or marking
    • H01L21/67253Process monitoring, e.g. flow or thickness monitoring
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67063Apparatus for fluid treatment for etching
    • H01L21/67075Apparatus for fluid treatment for etching for wet etching
    • H01L21/67086Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67242Apparatus for monitoring, sorting or marking
    • H01L21/67288Monitoring of warpage, curvature, damage, defects or the like

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
CN200910130203A 2008-03-24 2009-03-24 衬底处理方法和衬底处理设备 Pending CN101546704A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2008075019 2008-03-24
JP2008075019A JP4906766B2 (ja) 2008-03-24 2008-03-24 基板処理方法および基板処理装置

Publications (1)

Publication Number Publication Date
CN101546704A true CN101546704A (zh) 2009-09-30

Family

ID=41087847

Family Applications (1)

Application Number Title Priority Date Filing Date
CN200910130203A Pending CN101546704A (zh) 2008-03-24 2009-03-24 衬底处理方法和衬底处理设备

Country Status (3)

Country Link
US (1) US20090236316A1 (ja)
JP (1) JP4906766B2 (ja)
CN (1) CN101546704A (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103996620B (zh) * 2013-02-15 2017-06-30 斯克林集团公司 基板处理装置
CN113270316A (zh) * 2021-05-20 2021-08-17 惠科股份有限公司 一种待刻蚀基板的蚀刻方法和蚀刻机台

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105339183B (zh) 2013-03-15 2018-11-09 东京毅力科创Fsi公司 用于提供加热的蚀刻溶液的系统

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4886590A (en) * 1987-11-02 1989-12-12 Man-Gill Chemical Company Chemical process control system
JPH02137228A (ja) * 1988-11-17 1990-05-25 Nec Yamagata Ltd 半導体装置の製造方法
JPH04115530A (ja) * 1990-09-05 1992-04-16 Fujitsu Ltd 半導体装置の製造方法
JPH04188728A (ja) * 1990-11-22 1992-07-07 Hitachi Ltd 湿式エッチング装置
JPH11145107A (ja) * 1997-11-07 1999-05-28 Dainippon Screen Mfg Co Ltd 基板の表面処理方法
US6255123B1 (en) * 1998-11-17 2001-07-03 Kenneth P. Reis Methods of monitoring and maintaining concentrations of selected species in solutions during semiconductor processing
US6207068B1 (en) * 1998-11-18 2001-03-27 Advanced Micro Devices, Inc. Silicon nitride etch bath system
JP3891277B2 (ja) * 2002-05-21 2007-03-14 セイコーエプソン株式会社 処理装置および半導体装置の製造方法
JP4062419B2 (ja) * 2002-05-21 2008-03-19 セイコーエプソン株式会社 処理装置および半導体装置の製造方法
JP4393337B2 (ja) * 2004-10-13 2010-01-06 株式会社東芝 半導体基板処理装置及び半導体装置の製造方法
US7957821B2 (en) * 2004-11-17 2011-06-07 Taiwan Semiconductor Manufacturing Co., Ltd. Systems and methods for statistical process control

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103996620B (zh) * 2013-02-15 2017-06-30 斯克林集团公司 基板处理装置
CN113270316A (zh) * 2021-05-20 2021-08-17 惠科股份有限公司 一种待刻蚀基板的蚀刻方法和蚀刻机台

Also Published As

Publication number Publication date
US20090236316A1 (en) 2009-09-24
JP4906766B2 (ja) 2012-03-28
JP2009231527A (ja) 2009-10-08

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Application publication date: 20090930