CN101545945A - Method for testing leakage current of MOS device - Google Patents
Method for testing leakage current of MOS device Download PDFInfo
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- CN101545945A CN101545945A CN 200810035091 CN200810035091A CN101545945A CN 101545945 A CN101545945 A CN 101545945A CN 200810035091 CN200810035091 CN 200810035091 CN 200810035091 A CN200810035091 A CN 200810035091A CN 101545945 A CN101545945 A CN 101545945A
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Abstract
The invention provides a method for testing leakage current of an MOS device. The method comprises the following steps: 1, judging whether the leakage current of the MOS device to be tested is larger than a standard value or not, if so, carrying out testing according to a self-contained testing mode of a parameter automatic testing device, and otherwise, carrying out a step 2; 2, connecting a testing part with the MOS device, loading testing voltage and testing the value of the leakage current of the MOS device; 3, after testing the value of the leakage current of the MOS device for one time, disconnecting the testing part and the MOS device; 4, judging whether testing times is equal to preset times, if so, confirming a minimum leakage current value of the MOS device of the preset times to be the leakage current value of the testing MOS device and stopping the test of the automatic testing device, and otherwise, carrying out a step 5; and 5, after preset time, carrying out the step 2. The testing method can solve the problems of low efficiency and low precision of the parameter automatic testing device during testing the MOS device with low leakage current and improve the utilization rate of the automatic testing device.
Description
Technical field
The present invention relates to the electrical conformity testing of semiconductor devices field, relate in particular to the method for testing of MOS device test parameter leakage current.
Background technology
The MOS device is the device of semiconductor integrated chip widespread usage.For the integrated chip of low-power consumption, the leakage current parameter of MOS device just becomes vital parameter at present, and MOS device creepage parameter directly affects the quiescent dissipation of low-power consumption integrated chip.Along with the processing procedure of integrated chip constantly to the development of deep-submicron processing procedure, the leakage current parameter value levels off to littler.In common electrical conformity testing, leakage current is a parameter that is difficult to test stabilization result.See also Fig. 1, at present the mode of connection is as shown in Figure 1 during automatically testing parameters device to test MOS device 1.Because the minimum resolution of the induction test unit (SMU) of parameter aut.eq. is 0.1 a skin peace (PA), yet this resolution is in desirable test mode: the abnormal value that constant temperature, constant humidity and long-time stable back test mode can measure.The minimum leakage flow valuve of automatically testing parameters device energy measurement is the restriction of tested person device self hardware condition to a great extent.Even at the different test pattern of proving installation, middling speed test pattern or at a slow speed under the test pattern all can't be tested the little leakage current of quantitative value accurately.This mainly is because the influence of proving installation noise or external interference, and the electric current that produces when noise or external interference is during greater than the device creepage of test, and test is noise like this, and fict leakage current.
The method of traditional test device to test MOS device creepage, see also Fig. 2, at first start proving installation, the inspection of test condition parameters then, if test condition parameters does not meet the requirement of proving installation, just stop proving installation work,, and connect test component if meet the test condition parameters that proving installation just is set.Again test component is connected with the MOS device, loads test voltage, waits for certain test duration after, the leakage current of measurement MOS device stops automatic testing equipment after drawing measurement result.When MOS element leakage flow valuve is very little, disturb for reducing proving installation noise and extraneous factor, can be by increasing the stand-by period, the value after measurement MOS element leakage flow valuve trend is stable.Yet the long wait test duration has been reduced the utilization factor of automatic testing equipment significantly, has reduced testing efficiency.
Summary of the invention
The object of the present invention is to provide a kind of method of testing of MOS device creepage, test the low problem of little leakage current MOS device efficiency to solve the traditional parameters automatic testing equipment.
For achieving the above object, the method of testing of MOS device creepage of the present invention, adopt the automatically testing parameters device to test, test component is connected with MOS device to be measured during test, and it may further comprise the steps: step 1: judge whether overgauge value of MOS device creepage to be measured; If carry the test pattern test according to the automatically testing parameters device, if not, carry out step 2; Step 2: described test component is connected with the MOS device, loads test voltage, record the value of MOS device creepage; Step 3: after recording MOS element leakage flow valuve, disconnect described test component and MOS device; Step 4: whether the number of times of judging test equals preset times, if the MOS device minimum leakage flow valuve of preset times test is the test MOS device leakage current value, and stops the test of described automatic testing equipment, if not, carry out step 5; Step 5: after waiting for Preset Time, carry out step 2.The inventive method also can adopt the execution sequence of another step, judges that promptly the step 4 whether testing time equals preset times can be prepended between step 1 and the step 2, and correspondingly, step 5 is for after waiting for Preset Time, execution in step 4.Before step 1, also need to detect MOS device detection conditional parameter to be measured and whether meet the proving installation test condition, if meet the proving installation test condition, then test; If do not meet, then stop proving installation.Particularly, standard value is the electrical leakage of MOS device 1 skin peace in the step 1, and the preset times in the step 4 is three times, waits in the step 5 that Preset Time is 1 second.
Compare with conventional MOS element leakage value method of testing, the present invention measures leakage current value MOS device less than normal by increasing repeatedly test pattern, the intermittent several times MOS element leakage value of measuring, quiescent interval is short, at same test under the time, repeatedly the MOS element leakage flow valuve of Ce Lianging significantly carries less than the automatically testing parameters device and measures leakage current MOS device value less than normal under the test pattern like this.Under identical measuring accuracy, the efficient of method of testing test MOS device leakage current of the present invention is apparently higher than conventional test methodologies, to solve the conventional test methodologies test leakage current value low problem of MOS device efficiency less than normal like this.
Description of drawings
Below in conjunction with the drawings and specific embodiments the method for testing of MOS device creepage of the present invention is made further specific description in detail.
Connection diagram when Fig. 1 is automatically testing parameters device to test MOS device creepage.
Fig. 2 is that the automatically testing parameters device is from band model test MOS device leakage current process flow diagram.
Fig. 3 is a test MOS device leakage current schematic flow sheet of the present invention.
Fig. 4 is another schematic flow sheet of test MOS device leakage current of the present invention.
Fig. 5 is method of testing of the present invention and conventional test methodologies test result comparison chart.
Embodiment
See also test MOS device leakage current method flow diagram of the present invention shown in Figure 3.This method of testing is to adopt the automatically testing parameters device to test, and test component is connected with MOS device to be measured during test.It comprises step 1: judge whether overgauge value of MOS device creepage to be measured; If carry the test pattern test according to the automatically testing parameters device, if not, carry out step 2.Usually the leakage current parameter of MOS device to be tested has the test index value, and the MOS element leakage flow valuve that requires to test out is near this desired value, promptly in the error range that desired value allows.If the error range of the MOS element leakage flow valuve offset target value that tests out, the MOS device on the wafer of then producing is just thought defective.The leakage current test index value of MOS device to be tested and the standard value of automatically testing parameters device are made comparisons, judge the leakage current test index value of MOS device to be tested and the magnitude relationship of standard value, if the test index value is greater than the standard value of automatically testing parameters device, then can adopt the automatically testing parameters device to test from band model, flow process is as shown in Figure 2 tested.The standard value of different automatically testing parameters devices can be different, and this mainly is the hardware condition decision of automatically testing parameters device.When measurement is lower than the leakage current of MOS device of this standard value, the automatically testing parameters device adopts the MOS element leakage stream error that tests out from band model bigger, even wait for the last test result precision of test duration raising by increasing, testing efficiency also can descend significantly.Based on the hardware and the measuring accuracy of automatically testing parameters device commonly used at present, the definition standard value is 1PA.
The step 2 that method of testing of the present invention comprises: test component is connected with the MOS device, loads test voltage, record the value of MOS device creepage.The step 3 that this method of testing comprises: after recording MOS element leakage flow valuve, disconnect test component and MOS device.The step 4 of this method of testing: whether the number of times of judging test equals preset times, if the MOS device minimum leakage flow valuve of preset times test is the test MOS device leakage current value, and stops the test of described automatic testing equipment, if not, carry out step 5.Step 5: after waiting for Preset Time, carry out step 2.For improving the efficient of automatic testing equipment test MOS device leakage current, the preset times that requires to test can not be too many, preferably, testing time is more suitable for testing three times, the Preset Time of Deng Daiing is also unsuitable long simultaneously, this can influence the testing efficiency of proving installation equally, preferably, waits for that Preset Time is 1 second.Treat that after the MOS device creepage of three tests, the leakage current minimum value that records is as the MOS element leakage flow valuve of test.Usually the MOS element leakage flow valuve of preceding relatively twice measurement of MOS element leakage value of measuring for the third time is little.
The present invention is based on 5 above steps, also have another execution sequence, see also Fig. 4, step 4 is judged whether the number of times of test equals preset times, be prepended between step 1 and the step 2, wait for Preset Time in the step 5 accordingly after, carry out step 4.In the flow process of reality, also exist before Fig. 3 and Fig. 4 place step 1, start proving installation earlier, also need to detect MOS device detection conditional parameter to be measured and whether meet the proving installation test condition,, then test if meet the proving installation test condition; If do not meet, then stop proving installation.Adopt conventional test methodologies shown in Figure 2, wait for that the test duration is the MOS device of five kinds of different sizes to be tested in three seconds, test result is shown in diamond block among Fig. 5.Square shown in Fig. 5 is the mean value that every group of same size MOS device adopts the leakage current value that conventional test methodologies measures.Adopting method of testing of the present invention shown in Figure 3, wait for that Preset Time is 1 second, measure three times, also is that the MOS device of five kinds of different sizes is as mentioned above tested, and test result is shown in Fig. 5 intermediate cam piece.At the MOS device of same size, tested the MOS device of a plurality of same sizes, just the identical saturation current I of horizontal ordinate
DsatSurvey the leakage current I of these a plurality of MOS devices down
OffSame test was tested identical MOS device under the time as can be seen from Figure 5, the leakage current results that method of testing shown in Figure 3 is measured is more close, showing as figure intermediate cam piece overlaps basically, and diamond block distributes more discretely, this phenomenon is apparent in view during less than 1PA in the leakage current value of measuring, along with I
DsatIncrease, the leakage current I that measures
OffDuring greater than 1PA, conventional test methodologies and method of testing test result of the present invention are more or less the same.
MOS device creepage method of testing of the present invention, as shown in Figure 3 and Figure 4, carry test pattern by leakage current value repeatedly measurement pattern and the proving installation that whether the overgauge value is provided with at two kinds of different comparative results of judging MOS device to be tested, like this when the measurement leakage current is lower than the MOS device of standard value, adopt repeatedly the intermittent several times MOS of the measurement element leakage of measurement pattern value, quiescent interval is short, at same test under the time, repeatedly the MOS element leakage value precision of Ce Lianging is significantly higher than the measurement result that proving installation carries test pattern like this.Can significantly improve the testing efficiency of the little leakage current MOS device of proving installation test like this, solve the conventional test methodologies test leakage current value low problem of MOS device efficiency less than normal.
Claims (6)
1, a kind of method of testing of MOS device creepage adopts the automatically testing parameters device to test, and test component is connected with MOS device to be measured during test, it is characterized in that it may further comprise the steps:
Step 1: judge whether overgauge value of MOS device creepage to be measured; If carry the test pattern test according to the automatically testing parameters device, if not, carry out step 2;
Step 2: described test component is connected with the MOS device, loads test voltage, record the value of MOS device creepage;
Step 3: after recording MOS element leakage flow valuve, disconnect described test component and MOS device;
Step 4: whether the number of times of judging test equals preset times, if the MOS device minimum leakage flow valuve of preset times test is the test MOS device leakage current value, and stops the test of described automatic testing equipment, if not, carry out step 5;
Step 5: after waiting for Preset Time, carry out step 2.
2, the method for testing of MOS device creepage as claimed in claim 1 is characterized in that, described step 4 can be prepended between step 1 and the step 2, and correspondingly, step 5 is after waiting for Preset Time, execution in step 4.
3, the method for testing of MOS device creepage as claimed in claim 1, it is characterized in that, before step 1, also need to detect MOS device detection conditional parameter to be measured and whether meet the proving installation test condition, if meet the proving installation test condition, then test; If do not meet, then stop proving installation.
4, the method for testing of MOS device creepage as claimed in claim 1 is characterized in that, standard value described in the step 1 is the leakage current value of MOS device 1 skin peace.
5, the method for testing of MOS device creepage as claimed in claim 1 is characterized in that, the preset times in the described step 4 is three times.
6, the method for testing of MOS device creepage as claimed in claim 1 is characterized in that, waits in the described step 5 that Preset Time is 1 second.
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| CN 200810035091 CN101545945B (en) | 2008-03-25 | 2008-03-25 | Method for testing leakage current of MOS device |
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102436526A (en) * | 2011-11-02 | 2012-05-02 | 上海宏力半导体制造有限公司 | Drain electrode saturated current artificial circuit |
| CN103197222A (en) * | 2013-03-22 | 2013-07-10 | 上海宏力半导体制造有限公司 | Method for testing leak currents of transistors |
| WO2014082438A1 (en) * | 2012-11-28 | 2014-06-05 | 杭州广立微电子有限公司 | Addressable test circuit for testing transistor key parameters, and test method thereof |
| CN103996637A (en) * | 2014-06-09 | 2014-08-20 | 上海华力微电子有限公司 | Method for measuring electric leakage of PMOS device |
| CN105759110A (en) * | 2014-12-19 | 2016-07-13 | 中国电子科技集团公司第十八研究所 | Leak current testing method for anti-open-circuit protection diode assembly of hydrogen-nickel battery |
| CN103996637B (en) * | 2014-06-09 | 2016-11-30 | 上海华力微电子有限公司 | PMOS device electric leakage measuring method |
| CN106461723A (en) * | 2014-05-27 | 2017-02-22 | 雷诺有限合伙公司 | Field-effect transistor and associated fault detection device |
| CN107390077A (en) * | 2017-07-31 | 2017-11-24 | 广东美的制冷设备有限公司 | Method of testing, test device and computer-readable recording medium |
| CN112444733A (en) * | 2020-11-10 | 2021-03-05 | 海光信息技术股份有限公司 | Chip aging state detection method and device |
| CN113092975A (en) * | 2021-03-10 | 2021-07-09 | 上海华虹宏力半导体制造有限公司 | Source-drain breakdown voltage testing method of power MOS device |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1261991C (en) * | 2002-10-17 | 2006-06-28 | 联华电子股份有限公司 | Method for monitoring quality of oxide layer |
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2008
- 2008-03-25 CN CN 200810035091 patent/CN101545945B/en not_active Expired - Fee Related
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102436526A (en) * | 2011-11-02 | 2012-05-02 | 上海宏力半导体制造有限公司 | Drain electrode saturated current artificial circuit |
| WO2014082438A1 (en) * | 2012-11-28 | 2014-06-05 | 杭州广立微电子有限公司 | Addressable test circuit for testing transistor key parameters, and test method thereof |
| CN103197222A (en) * | 2013-03-22 | 2013-07-10 | 上海宏力半导体制造有限公司 | Method for testing leak currents of transistors |
| CN103197222B (en) * | 2013-03-22 | 2016-04-06 | 上海华虹宏力半导体制造有限公司 | The method of testing of transistor drain current |
| CN106461723A (en) * | 2014-05-27 | 2017-02-22 | 雷诺有限合伙公司 | Field-effect transistor and associated fault detection device |
| CN106461723B (en) * | 2014-05-27 | 2020-07-24 | 雷诺有限合伙公司 | Field effect transistor and related fault detection device |
| CN103996637A (en) * | 2014-06-09 | 2014-08-20 | 上海华力微电子有限公司 | Method for measuring electric leakage of PMOS device |
| CN103996637B (en) * | 2014-06-09 | 2016-11-30 | 上海华力微电子有限公司 | PMOS device electric leakage measuring method |
| CN105759110A (en) * | 2014-12-19 | 2016-07-13 | 中国电子科技集团公司第十八研究所 | Leak current testing method for anti-open-circuit protection diode assembly of hydrogen-nickel battery |
| CN107390077A (en) * | 2017-07-31 | 2017-11-24 | 广东美的制冷设备有限公司 | Method of testing, test device and computer-readable recording medium |
| CN112444733A (en) * | 2020-11-10 | 2021-03-05 | 海光信息技术股份有限公司 | Chip aging state detection method and device |
| CN113092975A (en) * | 2021-03-10 | 2021-07-09 | 上海华虹宏力半导体制造有限公司 | Source-drain breakdown voltage testing method of power MOS device |
| CN113092975B (en) * | 2021-03-10 | 2024-04-19 | 上海华虹宏力半导体制造有限公司 | Source-drain breakdown voltage testing method for power MOS device |
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| CN101545945B (en) | 2011-08-03 |
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