CN102854386B - A kind of method for testing resistance - Google Patents
A kind of method for testing resistance Download PDFInfo
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- CN102854386B CN102854386B CN201210273406.8A CN201210273406A CN102854386B CN 102854386 B CN102854386 B CN 102854386B CN 201210273406 A CN201210273406 A CN 201210273406A CN 102854386 B CN102854386 B CN 102854386B
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Abstract
The present invention is applicable to resistance test field, provide a kind of method for testing resistance, four of test machine test leads are comprised the steps: to be connected with four test leads of testing resistance respectively, wherein test machine first test lead is connected with the second test lead the same side at testing resistance, and test machine the 3rd, the 4th test lead is connected at the opposite side of testing resistance; Test the part or all of resistance value between test machine four test leads respectively, according to the part or all of resistance value between described test machine four test leads, calculate the resistance of testing resistance.The method for testing resistance that the application of the invention embodiment provides, can solve very well contact resistance in existing method for testing resistance cause the problem of test error, method of testing is simple, requires low to testing apparatus, easy realization, and the test value precision of the resistance tested is high.
Description
Technical field
The invention belongs to field tests, particularly relate to a kind of method for testing resistance.
Background technology
At electronic product, in the manufacture process of particularly integrated circuit, often need to test resistance.In integrated circuit (IC) chip On-Wafer Measurement process, there is the resistance that contact resistance two kinds between the line probe structural resistance of the probe of wafer sort and probe and resistance test end is parasitic.When testing resistance value precision prescribed is higher, line structure resistance and contact resistance often can not be ignored.
In existing measuring technology, eliminate the line structure resistance of probe mainly through Kelvin's compensating test method.
Fig. 1 is the structure diagram of Kelvin's test resistance, comprises testing resistance R
t, and lay respectively at resistance R
tthe first test lead D at two ends
2, the second test lead D
1with the 3rd test lead C
1, the 4th test lead C
2.First to fourth test lead is corresponding A, B, E, F tetra-probe test ends respectively.
Line structure resistance is there is between the test lead and the test lead of resistance of test machine, and the contact resistance between probe and test lead.Line structure resistance is expressed as R
l, contact resistance is expressed as R
c.
In test process, above-mentioned four ends form 2 test loops:
Article 1, path is voltage circuit, also claims Sence loop, by A point through line resistance R
aLwith contact resistance R
aCto D
2end, then through testing resistance R
tto C
2end, contact resistance R
fC, line resistance R
fLhold to F.In this loop, electric current is very little, is approximately zero.
Article 2 path is current return, also claims Force loop, by B point through line resistance R
bLwith contact resistance R
bCto D
1end, then through testing resistance R
tto C1 end, contact resistance R
eC, line resistance R
eLhold to E.In this loop, electric current is comparatively large, is set to I.
According to effect and the height of current potential, A end, F end, B end and E end are called as noble potential and apply line (HF), electronegative potential applying line (LF), noble potential detection line (HS) and electronegative potential detection line (LS).
Wherein, A end, B end are connected at M point respectively through line resistance, and E end, F end are connected at N point respectively through line resistance.Because when reading voltage or current value, contact resistance part lies in testing resistance R
tin, namely in actual test reading process, contact resistance is unavoidable has been included in testing resistance R
tin.
Because the electric current flowing through Sence test loop is very little, be approximately zero, at resistance R
aL, R
fLon pressure drop be also zero, and exciting current I is at resistance R
bL, R
eLon pressure drop do not affect I at measured resistance R
ton pressure drop, meanwhile, resistance R
bL, R
eLdo not affect and flow through testing resistance R yet
telectric current.
So, can accurately measure resistance R by the voltage table of Sence test loop
tthe voltage U at two ends, by Force loop, can accurately measure testing resistance R
telectric current I, then, according to Ohm law:
R＝U/I；
In common engineering, this resistance R is approximately equal to testing resistance R
t.
But clearly there is a problem, when voltage table reading, unavoidable the voltage that contact resistance part is born is included in wherein, that is:
U＝(R
AC+R
FC+R
T)＊I
Contact resistance and the testing resistance R of probe is contained at above-mentioned resistance
t, that is:
R＝R
AC+R
T+R
FC
Wherein, resistance R
aC, R
fCbe respectively the contact resistance of probe A, F and test lead, resistance R
tbe testing resistance value, R is the resistance value that true ohm law calculates.
As testing resistance R
tduring accuracy requirement height, contact resistance often can not be ignored.In order to reduce the error of contact resistance.Adopt increases probe points more at present, and the method being reduced contact resistance by the parallel connection of many probes reduces contact resistance, but still the impact of contact resistance can not be got rid of.
Summary of the invention
The embodiment of the present invention provides a kind of method for testing resistance, is intended to solve the impact that existing test resistance method cannot get rid of contact resistance, the problem that measured resistance error is larger.
The embodiment of the present invention is achieved in that a kind of method for testing resistance, comprises the steps:
Four of test machine test leads are connected with four test leads of testing resistance respectively, line resistance and contact resistance is there is between the test lead of test machine and testing resistance, the two is series relationship, wherein test machine first test lead is connected with the second test lead the same side at testing resistance, and test machine the 3rd, the 4th test lead is connected at the opposite side of testing resistance;
Adopt the method test resistance applying voltage tester electric current, test the part or all of resistance value between test machine four test leads respectively, according to the part or all of resistance value between described test machine four test leads, calculate the resistance of testing resistance;
When testing the conduction resistance value of NMOS tube, described part or all of resistance value of testing respectively between test machine four test leads, according to the part or all of resistance value between described test machine four test leads, the step calculating the resistance of testing resistance is specially:
Test machine first test lead, the second test lead are connected with the drain terminal of NMOS tube to be measured respectively, the 3rd, the 4th test lead is connected with the source of NMOS to be measured respectively;
Test machine the 3rd test lead, the 4th test lead is unsettled, the resistance in series sum R of test test machine first test lead, the second test lead
21, NMOS tube cut-off to be measured;
Test machine first test lead, the second test lead is unsettled, the resistance in series sum R of test test machine the 3rd test lead, the 4th test lead
22;
Test machine the 3rd test lead, the 4th test lead is in parallel, NMOS tube conducting to be measured, the resistance R of test test machine first test lead and test machine the 3rd test lead, the 4th test lead parallel connected end
23;
Test machine the 3rd test lead, the 4th test lead is in parallel, NMOS tube conducting to be measured, the resistance R of test test machine second test lead and test machine the 3rd test lead, the 4th test lead parallel connected end
24;
Test machine first test lead, the second test lead is in parallel, NMOS tube conducting to be measured, the resistance R of test test machine the 3rd test lead and test machine first test lead, the second test lead parallel connected end
25;
Test machine first test lead, the second test lead is in parallel, NMOS tube conducting to be measured, the resistance R of test test machine the 4th test lead and test machine first test lead, the second test lead parallel connected end
26;
Respectively by test machine first test lead, the second test lead parallel connection, test machine the 3rd test lead, the 4th test lead are in parallel, NMOS tube conducting to be measured, the resistance R of test test machine first test lead, the second test lead parallel connected end and test machine the 3rd test lead, the 4th test lead parallel connected end
27;
Be calculated as follows the conducting resistance R of metal-oxide-semiconductor to be measured
on:
R
on＝(R
26+R
25+R
24+R
23-2＊R
27-R
22-R
21)/2；
Wherein, R
21=R
a+ R
b, R
22=R
e+ R
f, R
23=R
a+ R
on+ R
eF, R
24=R
b+ R
on+ R
eF, R
25=R
e+ R
on+ R
aB, R
26=R
f+ R
on+ R
aB;
R
afor line resistance and the contact resistance sum of test machine first test lead and NMOS tube to be measured first test lead;
R
bfor line resistance and the contact resistance sum of test machine second test lead and NMOS tube to be measured second test lead;
R
efor line resistance and the contact resistance sum of test machine the 3rd test lead and NMOS tube to be measured 3rd test lead;
R
ffor line resistance and the contact resistance sum of test machine the 4th test lead and NMOS tube to be measured 4th test lead;
R
onfor the conducting resistance of NMOS tube to be measured;
R
eFfor R
e, R
fparallel resistance and;
R
aBfor R
a, R
bparallel resistance and; Or
When testing the conduction resistance value of NMOS tube, described part or all of resistance value of testing respectively between test machine four test leads, according to the part or all of resistance value between described test machine four test leads, the step calculating the resistance of testing resistance is specially:
Test machine first test lead, the second test lead are connected with the drain terminal of NMOS tube to be measured respectively, the 3rd, the 4th test lead is connected with the source of NMOS to be measured respectively;
Test machine the 3rd test lead, the 4th test lead is unsettled, the resistance in series sum R of test test machine first test lead, the second test lead
31, NMOS tube cut-off to be measured;
Test machine first test lead, the second test lead is unsettled, the resistance in series sum R of test test machine the 3rd test lead, the 4th test lead
32, NMOS tube cut-off to be measured;
Test machine second test lead, the 4th test lead is unsettled, NMOS tube conducting to be measured, the resistance in series sum R of test test machine first test lead and the 3rd test lead
33;
Test machine first test lead, the 3rd test lead is unsettled, NMOS tube conducting to be measured, the resistance in series sum R of test test machine second test lead and the 4th test lead
34;
Be calculated as follows the conducting resistance R of metal-oxide-semiconductor to be measured
on:
R
on＝(R
34+R
33-R
32-R
31)/2
Wherein, R
31=R
a+ R
b, R
32=R
e+ R
f, R
33=R
a+ R
on+ R
e, R
34=R
b+ R
on+ R
f;
R
afor line resistance and the contact resistance sum of test machine first test lead and NMOS tube to be measured first test lead;
R
bline resistance and the contact resistance sum of test machine second test lead and NMOS tube to be measured second test lead;
R
eline resistance and the contact resistance sum of test machine the 3rd test lead and NMOS tube to be measured 3rd test lead;
R
fline resistance and the contact resistance sum of test machine the 4th test lead and NMOS tube to be measured 4th test lead;
R
onfor the conducting resistance of NMOS tube to be measured.
The method for testing resistance that the application of the invention embodiment provides, can solve very well contact resistance in existing method for testing resistance cause the problem of test error, method of testing is simple, requires low to testing apparatus, easy realization, and the test value precision of the resistance tested is high.
Accompanying drawing explanation
Fig. 1 is the structural drawing of Kelvin's test resistance that prior art provides;
Fig. 2 is the method for testing resistance schematic diagram that the embodiment of the present invention that the embodiment of the present invention provides provides;
Fig. 3 is the circuit structure diagram adopting the method for testing resistance of the embodiment of the present invention to test the value of a resistance;
Fig. 4 is the connection diagram of line resistance and contact resistance in the embodiment of the present invention;
Fig. 5 is the circuit structure diagram of the conduction resistance value of the method for testing resistance test NMOS tube adopting the embodiment of the present invention.
Embodiment
In order to make object of the present invention, technical scheme and advantage clearly understand, below in conjunction with drawings and Examples, the present invention is further elaborated.Should be appreciated that specific embodiment described herein only in order to explain the present invention, be not intended to limit the present invention.
As shown in Figure 2, test machine has four test leads to the method for testing resistance that the embodiment of the present invention provides, and is respectively test machine first test lead A and holds, test machine second test lead B holds, test machine the 3rd test lead E holds, and test machine the 4th test lead F holds, these four test leads respectively with testing resistance R
ttesting resistance first test lead D
2, testing resistance second test lead D
1, testing resistance the 3rd test lead C
1, testing resistance the 4th test lead C
2be connected.
Testing resistance first test lead D
2, testing resistance second test lead D
1be distributed in testing resistance R
tthe same side, testing resistance the 3rd test lead C
1, testing resistance the 4th test lead C
2be distributed in testing resistance R
topposite side.
In embodiments of the present invention, hold by testing test machine first test lead A respectively, test machine second test lead B holds, test machine the 3rd test lead E holds, part or all of resistance value between test machine the 4th test lead F holds, then through mathematical logic computing, can accurately obtain testing resistance R
tresistance.
As an instantiation of embodiment of the present invention application, use four end methods of testing of the embodiment of the present invention accurately to test the value of a resistance, its circuit structure as shown in Figure 3.
A end, B end, E end, F end are first, second, third and fourth test lead of test machine respectively, D
2, D
1, C
1, C
2testing resistance R respectively
tfirst, second, third and fourth test lead.
The test lead of test machine and testing resistance R
tbetween there is line resistance R
lwith contact resistance R
c, the two is series relationship.
Method of testing is as follows:
1. test machine the 3rd test lead E end, the 4th test lead F are held unsettled, the resistance in series sum R that test test machine first test lead A end, the second test lead B hold
11, be formulated as follows:
R
11＝R
A+R
B； (1)
Wherein, R
afor test machine first test lead A holds and testing resistance first test lead D
2between line resistance R
aLwith contact resistance R
aCsum, that is:
R
A＝R
AL+R
AC；
R
bfor test machine second test lead B holds and testing resistance second test lead D
1between line resistance R
bLwith contact resistance R
bCsum, that is:
R
B＝R
BL+R
BC；
2. test machine first test lead A end, the second test lead B are held unsettled, the resistance in series sum R that test test machine the 3rd test lead E holds, the 4th test lead F holds
12, that is:
R
12＝R
E+R
F； (2)
Wherein, R
ethat test machine the 3rd test lead E holds and testing resistance the 3rd test lead C
1line resistance R between end
eLwith contact resistance R
eCsum, that is:
R
E＝R
EL+R
EC；
R
fthat test machine the 4th test lead F holds and testing resistance the 4th test lead C
2between line resistance R
fLwith contact resistance R
fCsum, that is:
R
F＝R
FL+R
FC；
3. test machine second test lead B end, the 4th test lead F are held unsettled, the resistance in series sum R that test test machine first test lead A end is held with the 3rd test lead E
13;
R
13＝R
A+R
T+R
E； (3)
Wherein, R
a, R
emeaning the same, R
tfor testing resistance value;
4. hold unsettled by test machine first test lead A end, the 3rd test lead E, test machine second test lead B holds the resistance in series sum R held with the 4th test lead F
14, that is:
R
14＝R
B+R
T+R
F； (4)
Wherein, R
b, R
f, R
tmeaning the same.
Then can obtain testing resistance R by formula " [(4)+(3)-(2)-(1)]/2 "
t, that is:
R
T＝(R
14+R
13-R
12-R
11)/2 (5)
From above formula, test machine end and testing resistance R
tbetween line resistance and contact resistance eliminated completely, through calculating after R
taccurately equal with the resistance of reality, do not exist approximate.
According to Ohm law, R=U/I;
Wherein, test above-mentioned resistance and adopt the method test resistance applying voltage tester electric current.
In embodiments of the present invention, R
a, R
b, R
e, R
fdeng the line resistance in dotted line frame and contact resistance as shown in Figure 4.
As another instantiation of embodiment of the present invention application, utilize the conduction resistance value of four end method of testing test NMOS tube of the embodiment of the present invention, the structure of test circuit as shown in Figure 4.
Wherein, conducting resistance to be measured is the resistance R when NMOS tube conducting
on, when NMOS tube is ended, the equivalent resistance of NMOS is infinitely-great.
A end, B end, E end, F end are first, second, third and fourth test lead of test machine respectively.
Method of testing is as follows:
1. test machine the 3rd test lead E end, the 4th test lead F are held unsettled, the resistance in series sum R that test test machine first test lead A end, the second test lead B hold
21, NMOS tube cut-off to be measured, then R
21be formulated as follows:
R
21＝R
A+R
B； (6)
Wherein, R
athat test machine first test lead A holds and NMOS tube first test lead D to be measured
2line resistance and contact resistance sum, R
bthat test machine second test lead B holds and NMOS tube second test lead D to be measured
1line resistance and contact resistance sum;
2. test machine first test lead A end, the second test lead B are held unsettled, the resistance in series sum R that test test machine the 3rd test lead E holds, the 4th test lead F holds
22, NMOS tube cut-off to be measured, then R
22be formulated as follows:
R
22＝R
E+R
F； (7)
Wherein, R
ethat test machine the 3rd test lead E holds and testing resistance the 3rd test lead C
1line resistance and contact resistance sum, R
fthat test machine the 4th test lead F holds and testing resistance the 4th test lead C
2line resistance and contact resistance sum;
3. hold in parallel by test machine the 3rd test lead E end, the 4th test lead F, NMOS tube conducting to be measured, tests the resistance that test machine first test lead A and the 3rd test lead E holds, the 4th test lead F holds parallel connected end, is set to R
23, that is:
R
23＝R
A+R
on+R
EF； (8)
Wherein, R
aresistance meaning is the same, R
onfor the conducting resistance of metal-oxide-semiconductor to be measured, R
eFrepresent R
e, R
fparallel resistance and;
4. hold in parallel by test machine the 3rd test lead E end, the 4th test lead F, NMOS tube conducting to be measured, test test machine second test lead B end and the resistance that the 3rd test lead E holds, the 4th test lead F holds parallel connected end, be set to R
24, that is:
R
24＝R
B+R
on+R
EF； (9)
Wherein, R
b, R
on, R
eFresistance value meaning is the same;
5. hold in parallel by test machine first test lead A end, the second test lead B, NMOS tube conducting to be measured, test test machine the 3rd test lead E holds and test machine first test lead A holds, the second test lead B holds the resistance of parallel connected end to be set to R
25, that is:
R
25＝R
E+R
on+R
AB； (10)
Wherein, R
e, R
onresistance meaning is the same, R
aBrepresent R
a, R
bparallel resistance and;
6. hold in parallel by test machine first test lead A end, the second test lead B, NMOS tube conducting to be measured, test test machine the 4th test lead F holds and test machine first test lead A holds, the second test lead B holds the resistance of parallel connected end to be set to R
26;
R
26＝R
F+R
on+R
AB； (11)
Wherein, R
f, R
on, R
aBresistance meaning is the same;
7. respectively test machine first test lead A end, the second test lead B are held in parallel, test machine the 3rd test lead E holds, the 4th test lead F holds in parallel, NMOS tube conducting to be measured, test test machine first test lead A end, the second test lead B end parallel connected end and the resistance that test machine the 3rd test lead E holds, the 4th test lead F holds parallel connected end, be set to R
27, that is:
R
27＝R
AB+R
on+R
EF； (12)
Wherein, R
aB, R
on, R
eFresistance meaning is the same;
The conducting resistance R of metal-oxide-semiconductor to be measured then can be obtained by formula " [(11)+(10)+(9)+(8)-2* (12)-(7)-(6)]/2 "
on, that is:
R
on＝(R
26+R
25+R
24+R
23-2＊R
27-R
22-R
21)/2 (13)
As one embodiment of the present of invention, the test of the conducting resistance of NMOS tube also can adopt the mode similar with conventional, electric-resistance, and namely above-mentioned 1 ~ 7 step also can replace to following 4 steps, and these 4 steps are consistent with 4 steps of above-mentioned test conventional, electric-resistance:
1. test machine the 3rd test lead E end, the 4th test lead F are held unsettled, the resistance in series sum R that test test machine first test lead A end, the second test lead B hold
31, NMOS tube cut-off to be measured, then R
31be formulated as follows:
R
31＝R
A+R
B； (14)
Wherein, R
athat test machine first test lead A holds and NMOS tube first test lead D to be measured
2line resistance and contact resistance sum, R
btest machine second test lead and NMOS tube to be measured second test lead D
1line resistance and contact resistance sum;
2. test machine first test lead A end, the second test lead B are held unsettled, the resistance in series sum R that test test machine the 3rd test lead E holds, the 4th test lead F holds
32, NMOS tube cut-off to be measured, then R
32be formulated as follows:
R
32＝R
E+R
F； (15)
Wherein, R
ethat test machine the 3rd test lead E holds and NMOS tube to be measured 3rd test lead C
1line resistance and contact resistance sum, R
fthat test machine the 4th test lead F holds and NMOS tube to be measured 4th test lead C
2line resistance and contact resistance sum;
3. test machine second test lead B end, the 4th test lead F are held unsettled, NMOS tube conducting to be measured, the resistance in series sum R that test test machine first test lead A end is held with the 3rd test lead E
33, then R
33be formulated as follows;
R
33＝R
A+R
on+R
E； (16)
Wherein, R
a, R
emeaning the same, R
onfor the conducting resistance of NMOS tube;
4. hold unsettled by test machine first test lead A end, the 3rd test lead E, NMOS tube conducting to be measured, test machine second test lead B holds the resistance in series sum R held with the 4th test lead F
34, then R
34be formulated as follows;
R
34＝R
B+R
on+R
F； (17)
Wherein, R
b, R
f, R
onmeaning the same.
The conducting resistance R of NMOS tube to be measured then can be obtained by formula " [(16)+(17)-(14)-(15)]/2 "
on, that is:
R
on＝(R
34+R
33-R
32-R
31)/2 (18)
According in Ohm law, calculate resistance R:
R＝U/I；
Wherein, test above-mentioned resistance and adopt the method test resistance applying testing current voltage.
The method for testing resistance that the application of the invention embodiment provides, can solve very well contact resistance in existing method for testing resistance cause the problem of test error, method of testing is simple, requires low to testing apparatus, easy realization, and the test value precision of the resistance tested is high.
The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, all any amendments done within the spirit and principles in the present invention, equivalent replacement and improvement etc., all should be included within protection scope of the present invention.
Claims (1)
1. a method for testing resistance, is characterized in that, described method comprises the steps:
Four of test machine test leads are connected with four test leads of testing resistance respectively, line resistance and contact resistance is there is between the test lead of test machine and testing resistance, the two is series relationship, wherein test machine first test lead is connected with the second test lead the same side at testing resistance, and test machine the 3rd, the 4th test lead is connected at the opposite side of testing resistance;
Adopt the method test resistance applying voltage tester electric current, test the part or all of resistance value between test machine four test leads respectively, according to the part or all of resistance value between described test machine four test leads, calculate the resistance of testing resistance;
When testing the conduction resistance value of NMOS tube, described part or all of resistance value of testing respectively between test machine four test leads, according to the part or all of resistance value between described test machine four test leads, the step calculating the resistance of testing resistance is specially:
Test machine first test lead, the second test lead are connected with the drain terminal of NMOS tube to be measured respectively, the 3rd, the 4th test lead is connected with the source of NMOS to be measured respectively;
Test machine the 3rd test lead, the 4th test lead is unsettled, the resistance in series sum R of test test machine first test lead, the second test lead
21, NMOS tube cut-off to be measured;
Test machine first test lead, the second test lead is unsettled, the resistance in series sum R of test test machine the 3rd test lead, the 4th test lead
22;
Test machine the 3rd test lead, the 4th test lead is in parallel, NMOS tube conducting to be measured, the resistance R of test test machine first test lead and test machine the 3rd test lead, the 4th test lead parallel connected end
23;
Test machine the 3rd test lead, the 4th test lead is in parallel, NMOS tube conducting to be measured, the resistance R of test test machine second test lead and test machine the 3rd test lead, the 4th test lead parallel connected end
24;
Test machine first test lead, the second test lead is in parallel, NMOS tube conducting to be measured, the resistance R of test test machine the 3rd test lead and test machine first test lead, the second test lead parallel connected end
25;
Test machine first test lead, the second test lead is in parallel, NMOS tube conducting to be measured, the resistance R of test test machine the 4th test lead and test machine first test lead, the second test lead parallel connected end
26;
Respectively by test machine first test lead, the second test lead parallel connection, test machine the 3rd test lead, the 4th test lead are in parallel, NMOS tube conducting to be measured, the resistance R of test test machine first test lead, the second test lead parallel connected end and test machine the 3rd test lead, the 4th test lead parallel connected end
27;
Be calculated as follows the conducting resistance R of metal-oxide-semiconductor to be measured
on:
R
on＝(R
26+R
25+R
24+R
23-2＊R
27-R
22-R
21)/2；
Wherein, R
21=R
a+ R
b, R
22=R
e+ R
f, R
23=R
a+ R
on+ R
eF, R
24=R
bb+R
on+ R
eF, R
25=R
e+ R
on+ R
aB, R
26=R
f+ R
on+ R
aB;
R
afor line resistance and the contact resistance sum of test machine first test lead and NMOS tube to be measured first test lead;
R
bfor line resistance and the contact resistance sum of test machine second test lead and NMOS tube to be measured second test lead;
R
efor line resistance and the contact resistance sum of test machine the 3rd test lead and NMOS tube to be measured 3rd test lead;
R
ffor line resistance and the contact resistance sum of test machine the 4th test lead and NMOS tube to be measured 4th test lead;
R
onfor the conducting resistance of NMOS tube to be measured;
R
eFfor R
e, R
fparallel resistance and;
R
aBfor R
a, R
bparallel resistance and; Or
When testing the conduction resistance value of NMOS tube, described part or all of resistance value of testing respectively between test machine four test leads, according to the part or all of resistance value between described test machine four test leads, the step calculating the resistance of testing resistance is specially:
Test machine first test lead, the second test lead are connected with the drain terminal of NMOS tube to be measured respectively, the 3rd, the 4th test lead is connected with the source of NMOS to be measured respectively;
Test machine the 3rd test lead, the 4th test lead is unsettled, the resistance in series sum R of test test machine first test lead, the second test lead
31, NMOS tube cut-off to be measured;
Test machine first test lead, the second test lead is unsettled, the resistance in series sum R of test test machine the 3rd test lead, the 4th test lead
32, NMOS tube cut-off to be measured;
Test machine second test lead, the 4th test lead is unsettled, NMOS tube conducting to be measured, the resistance in series sum R of test test machine first test lead and the 3rd test lead
33;
Test machine first test lead, the 3rd test lead is unsettled, NMOS tube conducting to be measured, the resistance in series sum R of test test machine second test lead and the 4th test lead
34;
Be calculated as follows the conducting resistance R of metal-oxide-semiconductor to be measured
on:
R
on＝(R
34+R
33-R
32-R
31)/2
Wherein, R
31=R
a+ R
b, R
32=R
e+ R
f, R
33=R
a+ R
on+ R
e, R
34=R
bb+R
on+ R
f;
R
afor line resistance and the contact resistance sum of test machine first test lead and NMOS tube to be measured first test lead;
R
bline resistance and the contact resistance sum of test machine second test lead and NMOS tube to be measured second test lead;
R
eline resistance and the contact resistance sum of test machine the 3rd test lead and NMOS tube to be measured 3rd test lead;
R
fline resistance and the contact resistance sum of test machine the 4th test lead and NMOS tube to be measured 4th test lead;
R
onfor the conducting resistance of NMOS tube to be measured.
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| CN103134990B (en) * | 2013-02-20 | 2015-09-30 | 上海华力微电子有限公司 | A kind of method for testing resistance |
| TWI586973B (en) * | 2016-08-12 | 2017-06-11 | 致茂電子股份有限公司 | Contact detecting circuit for four-terminal measuring device |
| CN108959738A (en) * | 2018-06-19 | 2018-12-07 | 国网河南省电力公司灵宝市供电公司 | The method for quickly calculating any resistance in delta connection using rebellion resistance theorem |
| CN113009223B (en) * | 2019-12-18 | 2023-09-19 | 致茂电子(苏州)有限公司 | Impedance measuring method |
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| US6674295B1 (en) * | 1999-08-05 | 2004-01-06 | Murata Manufacturing Co., Ltd. | Impedance measuring apparatus for electronic component |
| CN1595183A (en) * | 2003-09-09 | 2005-03-16 | 华为技术有限公司 | Test circuit and test method thereof |
| CN101285863A (en) * | 2007-04-10 | 2008-10-15 | 系新科技股份有限公司 | Method and device for measuring circuit substrate |
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| CN201945637U (en) * | 2010-12-31 | 2011-08-24 | 房慧龙 | Resistance tester with wide temperature range, wide measuring range, high precision and low cost |
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| JP4208560B2 (en) * | 2002-12-06 | 2009-01-14 | 日置電機株式会社 | Impedance measuring device |
| JP4735250B2 (en) * | 2005-12-28 | 2011-07-27 | 横河電機株式会社 | Measuring device |
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| CN1595183A (en) * | 2003-09-09 | 2005-03-16 | 华为技术有限公司 | Test circuit and test method thereof |
| CN101285863A (en) * | 2007-04-10 | 2008-10-15 | 系新科技股份有限公司 | Method and device for measuring circuit substrate |
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