CN103576066B - Method for measuring service life of hot carrier of semiconductor device - Google Patents
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- 239000000969 carrier Substances 0.000 claims description 17
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Abstract
The invention relates to a method for measuring the service life of a hot carrier of a semiconductor device. The method comprises the steps of (1) measuring the resistance on the grid electrode of the device, wherein the measuring method comprises the steps of (1-1) repetitively and electrically connecting the two ends of the grid electrode of the device, and measuring the resistance of the grid electrode, or (1-2) arranging two virtual grid electrodes on the two sides of the grid electrode on the semiconductor device, enabling one end of one virtual grid electrode to be connected with one end of the other virtual grid electrode, and electrically connecting the other ends of the two virtual grid electrodes to measure the resistance of the two virtual grid electrodes; (2) obtaining the temperature of the grid electrode according to the resistance obtained in the step (1) through measurement and by combining the linear relation between the resistance and the temperature of the grid electrode, and monitoring the actual temperature of the device by measuring the temperature of the grid electrode. According to the method for measuring the service life of the hot carrier of the semiconductor device, the heat resistance on the grid electrode is measured through the two ends of the grid electrode of the device to be measured or by arranging the virtual grid electrodes on the two sides of the grid electrode, the actual temperature of the device to be measured is obtained, the service life of the hot carrier is predicted under the actual temperature, and thus the result is more accurate.
Description
Technical Field
The invention relates to the field of semiconductor manufacturing, in particular to a method for measuring the service life of a hot carrier of a semiconductor device.
Background
For the very large scale integrated circuit manufacturing industry, with the continuous reduction of the size of MOSFET (metal oxide semiconductor field effect transistor) devices, semiconductor manufacturing processes have entered the deep submicron era and have developed towards the ultra-deep submicron, and at this time, the reliability of semiconductor devices more and more directly affects the performance and the service life of manufactured IC chips. However, when the size of the MOS device is reduced in an equal proportion, the operating voltage of the device is not reduced in an equal proportion, so that the electric field intensity inside the corresponding device is increased as the size of the device is reduced. Therefore, in a small-sized device, the lateral dimension of the circuit is smaller and smaller, which results in the reduction of the channel length, even a small source-drain voltage can form a high electric field strength near the drain terminal, and channel electrons gain a large drift velocity and energy in a strong field region at the drain terminal due to the action of the lateral electric field, and become hot carriers. In a deep submicron process, as the size of a MOS device is gradually reduced, the Hot Carrier Injection (HCI) effect of the MOS device is increasingly serious, and the degradation of the device performance caused by the HCI effect is one of important factors affecting the reliability of the MOS device. Therefore, the HCI test has become one of the main test items for the reliability test of MOS devices.
Since the injection of hot carriers into MOS devices is according to JEDEC standards, the MOS Device HCI test is also performed according to JEDEC (joint Electron Device Engineering council) standards. There are 3 types of life models for hot carrier testing provided in the JEDEC standard, that is, a drain-source voltage acceleration Vds model, a substrate current Isub model, and a substrate-to-drain current ratio Isub/Id model, and one type may be selected as needed in practical application, and a substrate-to-drain current ratio Isub/Id model is generally accepted to be selected. However, regardless of the substrate-to-drain current ratio Isub/Id model or the substrate current Isub model, the general HCI test MOS device requires loading at least 3 different stress voltage conditions, and obtaining the substrate current Isub and the drain current Id under each stress voltage condition, and the substrate current Isub and the drain current Id under the operating conditions required for estimating the lifetime, as shown in fig. 1 a-b.
At present, the self-heating phenomenon (SH) of the device caused by the injection of HCI causes the drop of the driving current, which is an important problem of MOS and silicon-on-insulator (SOI) devices, and in addition, the temperature of the channel in the HCI injection is increased, i.e., the channel temperature is much higher than the preset temperature in the HCI injection at high voltage, and since the detection of HCI is closely related to the temperature and is greatly influenced by the temperature, the temperature effect caused by self-heating should be considered in calculating the hot carrier lifetime, otherwise, the determination of the carrier lifetime will bring errors.
Because the temperature rise caused by self-heating generally drops to the room temperature after 360 seconds, in order to eliminate the influence caused by self-heating in the prior art, a delay time is usually introduced between injection and measurement of HCI to eliminate the influence of temperature, the channel temperature without time delay is much higher than the room temperature, and the measurement after the delay time is added is more accurate.
Therefore, how to eliminate the influence of the temperature rise caused by self-heating during HCI injection on HCI lifetime detection and obtain more accurate results is a problem to be solved at present.
Disclosure of Invention
In this summary, concepts in a simplified form are introduced that are further described in the detailed description. This summary of the invention is not intended to identify key features or essential features of the claimed subject matter, nor is it intended to be used as an aid in determining the scope of the claimed subject matter.
The invention provides a more accurate method for measuring the service life of a hot carrier of a semiconductor device, which eliminates the influence caused by self-heating when the hot carrier is injected, and comprises the following steps:
1) measuring the resistance on the grid electrode of the device, wherein the measuring method comprises the following steps:
1-1) respectively electrically connecting two ends of the grid of the device, measuring the resistance of the grid,
or,
1-2) arranging two virtual grids on two sides of a grid on the semiconductor device, wherein one ends of the two virtual grids are connected, and the other ends of the two virtual grids are electrically connected to test the resistance of the two virtual grids;
2) and (2) obtaining the temperature of the grid according to the measured resistance in the step 1) and by combining a linear relation between the grid resistance and the temperature, and monitoring the actual temperature of the device by measuring the temperature of the grid.
Preferably, the method further comprises step 3):
calculating the service life of the hot carrier at the actual temperature in the step 2), and establishing a one-to-one correspondence relationship between the actual temperature of the device and the service life of the hot carrier.
Preferably, the method further comprises step 4):
injecting hot carriers under stress voltage, measuring the resistance of the grid electrode of the semiconductor device, and measuring the service life of the hot carriers.
Preferably, the step 3) includes the steps of:
under certain stress drain voltage and grid voltage, the actual temperature of the device is changed, the hot carrier service life under different actual temperatures is obtained by utilizing a substrate/drain current ratio model, and the one-to-one corresponding relation between the actual temperature of the device and the hot carrier service life is established.
Preferably, the following steps are included between the step 3) and the step 4): establishing a one-to-one correspondence relationship between the gate resistance and the hot carrier lifetime according to the linear relationship between the gate resistance and the actual temperature of the device in the step 2) and the one-to-one correspondence relationship between the actual temperature of the device and the hot carrier lifetime in the step 3).
Preferably, the gate resistance is measured by connecting contact holes on the gate or dummy gate through wires.
Preferably, when two ends of the grid electrode of the semiconductor device are not in contact with the connecting piece of the measuring instrument, the semiconductor device is in a conventional size.
Preferably, the semiconductor device is of a conventional size when the two dummy gates are not in communication with the metal layer through contact holes in the device.
Preferably, the hot carrier drain current and self-heating measurements are both performed on the same device.
According to the method, the thermal resistance on the grid electrode is measured by arranging the virtual grid electrodes at two ends of the grid electrode of the device to be measured or at two sides of the grid electrode, the actual temperature of the device to be measured is obtained through the measured thermal resistance, and the service life of the hot carrier is predicted at the actual temperature.
Drawings
The following drawings of the invention are included to provide a further understanding of the invention. There are shown in the drawings, embodiments and descriptions thereof, which are used to explain the principles and apparatus of the invention. In the drawings, there is shown in the drawings,
FIGS. 1a-b are schematic diagrams of a hot carrier lifetime calculation method in the prior art;
fig. 2a-b illustrate a method of measuring the resistance of a gate of a semiconductor device in accordance with the present invention.
Detailed Description
In the following description, numerous specific details are set forth in order to provide a more thorough understanding of the present invention. It will be apparent, however, to one skilled in the art, that the present invention may be practiced without one or more of these specific details. In other instances, well-known features have not been described in order to avoid obscuring the invention.
It should be noted that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of exemplary embodiments according to the invention. As used herein, the singular is intended to include the plural unless the context clearly dictates otherwise. It will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof.
Exemplary embodiments according to the present invention will now be described in more detail with reference to the accompanying drawings. These exemplary embodiments may, however, be embodied in many different forms and should not be construed as limited to only the embodiments set forth herein. It is to be understood that these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of these exemplary embodiments to those skilled in the art. In the drawings, the thicknesses of layers and regions are exaggerated for clarity, and the same elements are denoted by the same reference numerals, and thus the description thereof will be omitted.
The invention provides a method for measuring the service life of hot carriers more accurately, which eliminates the influence caused by self-heating when the hot carriers are injected, and comprises the following steps:
1) measuring the resistance on the grid electrode of the device, wherein the measuring method comprises the following steps:
1-1) respectively electrically connecting two ends of the grid of the device, measuring the resistance of the grid,
or,
1-2) arranging two virtual grids on two sides of a grid on the semiconductor device, wherein one ends of the two virtual grids are connected, and the other ends of the two virtual grids are electrically connected to test the resistance of the two virtual grids;
2) and (2) obtaining the temperature of the grid according to the measured resistance in the step 1) and by combining a linear relation between the grid resistance and the temperature, and monitoring the actual temperature of the device by measuring the temperature of the grid.
Preferably, the present invention may further comprise step 3) and step 4):
3) establishing a one-to-one correspondence relationship between the actual temperature of the device and the hot carrier lifetime;
4) and injecting hot carriers under the stress voltage, measuring the resistance of the grid electrode of the semiconductor device, and predicting the service life of the hot carriers.
Specifically, first, the resistance on the gate of the device is determined, and the measuring method may be various as long as the resistance of the gate can be measured, and two kinds of test methods are provided as preferable embodiments of the present invention:
firstly, as shown in fig. 2a, two ends of the gate of the device are electrically connected for testing, the testing method may have various methods, in the present invention, a conventional Kelvin structure is selected for testing the resistance of the gate, a current connection 207 is connected to two ends of the gate, a current is applied to two ends of the gate, a voltage connection 206 is connected to two ends of the gate, a voltage is applied to two ends of the gate, and then the gate resistance is obtained by calculation, and the current connection and the voltage connection are electrically connected to the gate through contact holes 204 and 205, respectively. The device size of the present invention is not strictly limited and may be conventional, but to ensure that the two ends of the gate and the connectors at the two ends of the gate do not contact each other, the device size may be increased if the requirements are not ensured. Preferably, dummy gates 202 are further disposed on both sides of the gate on the device, and the dummy gates are not in contact with the gate and the contact hole on the device.
The invention also provides a method for measuring the resistance of the grid, as shown in fig. 2b, two virtual grids 202 are respectively arranged at two sides of the grid 201, one ends of the two virtual grids are electrically connected through a connecting piece 208, the connecting piece 208 can be a lead, the connecting mode can adopt a common method in the field, in the invention, a conventional Kelvin structure is selected for testing the resistance of the grid, specifically, a current wiring 207 at the other ends of the two virtual grids is connected, current is applied to two ends of the virtual grid, a voltage wiring 206 at the other end of the virtual grid is connected, voltage is applied to two ends of the virtual grid, then the resistance can be obtained through calculation, the resistance obtained through calculation is the resistance of the grid 201, and the current wiring and the voltage wiring are respectively electrically connected with the grid through contact holes 209 and 205. . Also, the device may be of conventional size, without strict limitation, as long as it is ensured that the two dummy gates and the contact holes and metal layers on the device do not contact each other. Preferably, the semiconductor under the gate further has a source drain contact hole 203.
The resistance of the gate can be measured by the above method when hot carriers are injected at a higher stress voltage.
And 2) obtaining the gate temperature according to the measured resistance in the step 1) by combining a linear relation between the resistance and the temperature, wherein the gate temperature is consistent with the temperature of the device during hot carrier injection, and the temperature of the device is monitored by measuring the gate temperature.
In the invention, the temperature of the device is monitored in real time by monitoring the resistance on the grid, particularly after the temperature rises due to self-heating caused by HCI injection, the temperature of the device can be accurately measured, and after the accurate temperature of the device is detected, two methods can be adopted when the service life of the heat carrier is measured:
one is to detect the temperature of the device at any time, and when the temperature is reduced to room temperature, the detection is performed, and the other is to continue to perform the steps 3) and 4) when the temperature of the device is reduced slowly or repeatedly:
the step 3) establishes a one-to-one correspondence relationship between the actual temperature of the device and the service life of the hot carriers;
specifically, under certain stress drain voltage and gate voltage, the environment and the actual temperature of the device are changed, the hot carrier service life at different actual temperatures is obtained by using a substrate/drain current ratio model, and the one-to-one correspondence relationship between the actual temperature of the device and the hot carrier service life is established. In a specific embodiment of the present invention, first, a drain voltage Vd and a gate voltage Vg in a stress condition are determined, and then a substrate/drain current ratio model is established, where the method for establishing the substrate/drain current ratio model includes: taking NMOS as an example, generally testing HCI under 3 different Vd conditions, such as Vd1, scanning Vg, measuring Isub simultaneously, thereby obtaining Vg corresponding to Isubmax, then testing Id variation of the device under Vg and Vd, and when Id decreases by 10%, the time required is called T1; the same procedure was followed to obtain T2, T3 at two different Vd's and then fit a curve similar to that shown in FIG. 1 b. And then detecting the service life of the hot carrier at different temperatures by using the model, for example, the service life of the hot carrier at the test environment temperature of T1 ℃ and the actual temperature of T10 ℃ in the step 2) is N1, then measuring multiple groups of environment temperatures, the actual temperature of the device and the service life of the hot carrier at the temperature by using the model, sorting the obtained data, and drawing a relation curve between the actual temperature of the device and the service life of the hot carrier, wherein the relation between the service life of the hot carrier and the temperature is TTF = A x exp ((Ea/(kT)), wherein A is a constant, k is a Boltzmann constant, and Ea is activation energy. Ea is positive, the higher the actual temperature is, the shorter the hot carrier lifetime is; ea is negative, the higher said actual temperature, the longer the hot carrier lifetime.
And 4) injecting hot carriers under the stress voltage, measuring the resistance of the grid electrode of the semiconductor device, and predicting the service life of the hot carriers.
Specifically, hot carriers are injected under stress voltage, the resistance of the grid electrode of the semiconductor device is measured, then the corresponding actual temperature is obtained according to the resistance-actual temperature curve, and then the life of the hot carriers is obtained by obtaining the actual temperature on the actual temperature-hot carrier life curve.
Preferably, the following steps can be included between the step 3) and the step 4) in the present invention: establishing a one-to-one correspondence between the resistance and the hot carrier life according to the linear relationship between the resistance and the actual temperature of the device in the step 2) and the one-to-one correspondence between the actual temperature of the device and the hot carrier life in the step 3), and directly obtaining the hot carrier life on a curve of the resistance and the hot carrier life after measuring the obtained resistance.
In the invention, the two ends of the grid electrode of the device to be measured are connected through the connecting piece or the two sides of the grid electrode are connected to arrange the virtual grid electrode to measure the thermal resistance on the grid electrode, the actual temperature of the device to be measured is obtained through the measured thermal resistance, and the service life of the hot carrier is predicted at the actual temperature.
The present invention has been illustrated by the above embodiments, but it should be understood that the above embodiments are for illustrative and descriptive purposes only and are not intended to limit the invention to the scope of the described embodiments. Furthermore, it will be understood by those skilled in the art that the present invention is not limited to the embodiments described above, and that many variations and modifications may be made in accordance with the teachings of the present invention, which variations and modifications are within the scope of the present invention as claimed. The scope of the invention is defined by the appended claims and equivalents thereof.
Claims (9)
1. A method of measuring hot carrier lifetime of a semiconductor device, the method comprising:
1) measuring the resistance on the grid electrode of the device, wherein the measuring method comprises the following steps:
1-1) respectively electrically connecting two ends of the grid of the device, measuring the resistance of the grid,
or,
1-2) arranging two virtual grids on two sides of a grid on the semiconductor device, wherein one ends of the two virtual grids are connected, and the other ends of the two virtual grids are electrically connected to test the resistance of the two virtual grids;
2) obtaining the temperature of the grid electrode by combining the linear relation between the grid electrode resistance and the temperature according to the resistance measured in the step 1), and monitoring the actual temperature of the device by measuring the temperature of the grid electrode so as to eliminate the influence of the grid electrode thermal resistance.
2. The method according to claim 1, characterized in that the method further comprises step 3):
calculating the service life of the hot carrier at the actual temperature in the step 2), and establishing the one-to-one corresponding relation between the actual temperature of the device and the service life of the hot carrier
3. The method according to claim 2, characterized in that the method further comprises step 4):
injecting hot carriers under stress voltage, measuring the resistance of the grid electrode of the semiconductor device, and measuring the service life of the hot carriers.
4. The method according to claim 2, wherein the step 3) comprises the steps of:
under certain stress drain voltage and grid voltage, the actual temperature of the device is changed, the hot carrier service life under different actual temperatures is obtained by utilizing a substrate/drain current ratio model, and the one-to-one corresponding relation between the actual temperature of the device and the hot carrier service life is established.
5. A method according to claim 4, wherein hot carriers are injected after step 3) and under a stress voltage, the resistance of the gate of the semiconductor device is measured, and before measuring the hot carrier lifetime, the method comprises the steps of: establishing a one-to-one correspondence relationship between the gate resistance and the hot carrier lifetime according to the linear relationship between the gate resistance and the actual temperature of the device in the step 2) and the one-to-one correspondence relationship between the actual temperature of the device and the hot carrier lifetime in the step 3).
6. The method of claim 1, wherein the gate resistance is measured by wire connecting power, voltage connections on the gate or dummy gate.
7. The method of claim 1, wherein the semiconductor device is of a conventional size when the two ends of the gate of the semiconductor device are not in contact with the connections of the meter.
8. The method of claim 1, wherein the semiconductor device is of conventional size when the two dummy gates are not in communication with the metal layer through contact holes in the device.
9. A method according to claim 1, wherein the hot carrier drain current and self-heating measurements are both made on the same device.
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| CN104237764B (en) * | 2014-09-15 | 2017-01-25 | 工业和信息化部电子第五研究所 | Method and device for testing MOS device hot carrier injection life degradation |
| CN106571312B (en) * | 2015-10-13 | 2020-01-03 | 中芯国际集成电路制造(上海)有限公司 | FinFET device contact resistance measurement structure and measurement method, and electronic device |
| CN106910734B (en) * | 2015-12-22 | 2019-07-26 | 中芯国际集成电路制造(上海)有限公司 | A kind of the self-heating measurement structure and measurement method, electronic device of FinFET |
| CN106646179B (en) * | 2016-11-18 | 2019-11-29 | 武汉新芯集成电路制造有限公司 | A kind of semiconductor array component testing method |
| CN107607214B (en) * | 2017-09-13 | 2019-12-24 | 上海华力微电子有限公司 | Temperature measuring method and electromigration testing method |
| CN110470965B (en) * | 2019-07-09 | 2020-07-28 | 同济大学 | Semiconductor surface state carrier life test method |
| CN111060794B (en) * | 2019-11-19 | 2022-05-13 | 中国电子产品可靠性与环境试验研究所（（工业和信息化部电子第五研究所）（中国赛宝实验室）） | Method and device for evaluating service life of hot carrier injection effect and computer equipment |
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| CN85107886B (en) * | 1985-10-18 | 1988-02-24 | 山东大学 | Screening method of mosfet by gate-voltage and temp. |
| US7106088B2 (en) * | 2005-01-10 | 2006-09-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of predicting high-k semiconductor device lifetime |
| JP2006258686A (en) * | 2005-03-18 | 2006-09-28 | Agilent Technol Inc | Reliability measuring device and measuring method |
| CN101587162B (en) * | 2008-05-23 | 2011-08-24 | 中芯国际集成电路制造(北京)有限公司 | Method for detecting hot carrier effect of semiconductor device |
| CN101726695B (en) * | 2008-10-17 | 2011-12-28 | 和舰科技(苏州)有限公司 | Method for testing service life of NMOS hot carrier injection |
| CN101692449B (en) * | 2009-10-13 | 2013-05-29 | 上海宏力半导体制造有限公司 | Circuit for parallel measurement of hot carrier injection effect |
| CN102236063B (en) * | 2010-04-21 | 2013-08-07 | 中国科学院微电子研究所 | Method for predicting service life of hot carrier of silicon-on-insulator device |
| DE102010029147B4 (en) * | 2010-05-20 | 2012-04-12 | Semikron Elektronik Gmbh & Co. Kg | Method for determining the temperature of a power semiconductor |
| CN102157411B (en) * | 2010-12-31 | 2016-04-27 | 上海集成电路研发中心有限公司 | MOSFET element electrology characteristic variation measuring method |
| CN102495345B (en) * | 2011-12-06 | 2015-11-18 | 上海集成电路研发中心有限公司 | Determine the method for hot carrier in jection device lifetime |
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