CN101542016A - 成膜方法和成膜装置 - Google Patents
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Abstract
本发明涉及一种成膜方法,其通过向被处理基板的表面上供给羰基金属原料的气相分子,在所述被处理基板表面附近使其分解,而在所述被处理基板的表面上堆积金属膜,设置有在所述被处理基板表面堆积金属层时,使与所述被处理基板外周部分邻接的区域中的所述羰基金属原料优先分解的工序,使得在所述被处理基板外周部附近的气氛中CO浓度局部增大,抑制金属膜在所述外周部的堆积。
Description
技术领域
本发明涉及一般的成膜技术,特别涉及由CVD法(化学气相淀积法)进行的导体膜的成膜方法和成膜装置。
背景技术
在半导体装置的制造中,成膜技术是基本并且重要的技术。
在半导体装置的制造中,广泛进行通过CVD法(化学气相淀积法)形成半导体膜、绝缘膜的方法,但形成配线层的导体膜一般是由溅射等工艺形成的。
另一方面,在当前的超微细化半导体集成电路装置中,为了使在基板上形成的极大量的半导体元件相互连接,使用了将低电阻金属制成配线图案的多层配线结构。特别是在以Cu制成配线图案的多层配线结构中,一般使用在氧化硅膜或者由比介电常数比较低的所谓低介电常数(low-K)材料构成的层间绝缘膜中预先形成配线槽或通孔,用Cu层将其填充,再通过化学机械研磨(CMP)除去剩余的Cu膜部分的嵌刻法或双嵌刻法。
在嵌刻法或双嵌刻法中,典型是用由Ta等高熔点金属构成的阻挡金属膜覆盖在层间绝缘膜中形成的配线槽或通孔的表面,在其上通过PVD法或CVD法形成薄的Cu种膜,以此Cu种膜作为电极进行电镀,由此,利用Cu层填充上述配线槽或通孔。
在当前的半导体集成电路装置中,伴随着微细化,在层间绝缘膜中形成的Cu通孔插塞的直径已缩小到65nm~45nm,据预测在不久的将来,通孔插塞的直径将缩小到32nm到22nm。
伴随着半导体集成电路装置的微型化,在如此细微的通孔或配线槽中,从阶梯覆盖的观点出发,用现有的PVD法形成阻挡金属膜或Cu种膜有困难,因此研究了能够在不会对由low-K材料构成的层间绝缘膜造成损害的低温下,实现优异的阶梯覆盖率的利用MOCVD法或ALD法的成膜技术。
然而,在上述嵌刻法或双嵌刻法中,在阻挡金属膜和Cu种膜的堆积之后,通过电镀法在整个基板上堆积Cu膜。此后在CMP工序中留下由电镀填充在上述配线槽或通孔中的Cu层,除去堆积在基板上的其它部分的Cu膜和Cu种膜,但在CMP法中,不能除去在基板端侧面(斜面)上堆积的上述Cu膜、Cu种膜。如此残留在基板斜面部上的金属膜,在对基板进行处置时容易通过接触或冲击而剥离,成为颗粒的主要来源。
因此,在通过PVD法或电镀法形成Cu种层或Cu膜时,使用夹具机构覆盖基板端,以抑制在基板端和里面的Cu膜的堆积。
发明内容
因此,当如上所述使用MOCVD法或ALD法形成Cu种膜时,与PVD法相比,为了进一步提高阶梯覆盖,使用上述的夹具机构,即使这样也难以抑制在上述基板端侧面的Cu种膜的堆积。
本发明提供一种使用气相原料的金属膜的成膜技术,是一种可靠地抑制在半导体基板外周部的金属膜的堆积的技术。
根据一个特征,本发明提供一种成膜方法,是向被处理基板表面供给羰基金属原料的气相分子,通过在上述被处理基板表面附近使其分解,在上述被处理基板表面上堆积金属膜的成膜方法,其特征在于,该方法包括在上述处理基板表面堆积金属层时,在与上述被处理基板外周部邻接的区域,使上述羰基金属原料优先分解的工序,在上述被处理基板外周部附近,局部增大气氛中的CO浓度,抑制金属膜在上述外周部的堆积。
根据另一个特征,本发明提供一种成膜装置,该装置包括:具有保持被处理基板的基板保持台的处理容器;对上述处理容器进行排气的排气系统;向上述处理容器供给羰基金属原料气体的第一气体供给系统;和向上述处理容器供给抑制上述羰基金属原料分解的气体的第二气体供给系统,其特征在于,上述基板保持台具有支撑部和温度控制部,上述支撑部具有与上述被处理基板的外径相对应的尺寸,支撑上述被处理基板,上述温度控制部与上述支撑部相接并包围上述支撑部,上述温度控制部,在通过上述羰基金属原料的分解而在上述被处理基板上形成金属膜时,保持在高于上述支撑部的温度。
根据本发明,在使用羰基金属原料在被处理基板表面上堆积金属膜时,通过促进羰基金属原料在上述被处理基板外周部附近区域的分解,可局部增大在该外周部附近区域的气氛中CO的浓度,由此就能够可靠而有效地抑制在上述被处理基板外周部堆积上述金属膜。
附图说明
图1是表示在本发明中使用的成膜装置的概要的图。
图2是说明本发明原理的图。
图3是说明本发明原理的另一个图。
图4是表示在本发明第一实施方式的成膜装置中使用的基板保持台的概要的图。
图5是表示本发明第二实施方式的成膜装置中使用的基板保持台的概要的图。
图6是表示在上述图6的成膜装置中形成有金属膜的晶片的概要的图。
图7是表示本发明第三实施方式的成膜装置中使用的基板保持台的概要的图。
图8是表示本发明第四实施方式的成膜装置中使用的基板保持台的概要的图。
具体实施方式
图1表示在本发明中使用的成膜装置10的结构。
参照图1,成膜装置10具有由排气系统11排气、包括保持被处理基板W的基板保持台13的处理容器12,在上述处理容器12中,形成使被处理基板W出入的闸阀12G。
上述基板处理台13内部装有未图示的加热器,通过驱动管线13A驱动加热器,将上述被处理基板W保持在所需的处理温度。
上述排气系统11具有涡轮分子泵11A和干式泵11B串联连接的结构,经由阀11b向上述涡轮分子泵11A供给氮气。
在上述处理容器12和涡轮分子泵11A之间设有流导可变阀11a,将上述处理容器12内的总压维持在一定压力。并且,在图1的成膜装置10中,为了通过干式泵11B对上述处理容器12进行粗排真空,设置有绕过上述涡轮分子泵11A的排气通路11C,在排气通路11C上设置有阀11c,在涡轮分子泵11A的下游侧设有另一个阀11d。
从包括鼓泡器14A的原料供给系统14,经由气体导入管线14B,以气体的形式向上述处理容器12供给成膜原料。
在如图所示的例子中,在上述鼓泡器14A中保持有Ru的羰基化合物Ru3(CO)12,从包括MFC(质量流量控制装置)14b的鼓泡气体管线14a供给CO气体作为鼓泡气体,使气化的Ru3(CO)12经由上述气体导入管线14B,从具有管线MFC14c的管线14d,与CO载气一起供给至上述处理容器12。
在图1的结构中,在上述原料供给系统14中设有包括阀14g、14h和MFC 14e的供给Ar等不活泼气体的管线14f,经由上述管线14B,在供给至上述处理容器12中的Ru3(CO)12原料气体中添加不活泼气体。
上述成膜装置10设置有对上述处理容器12、排气系统11和原料供给系统14进行控制的控制装置10A。
图2是详细显示在上述基板保持台13上保持的晶片W上堆积Ru膜的状况,特别显示上述晶片W的端部附近的情况的图。
参照图2,上述晶片W以上述晶片W的带有圆形的端部与凹部的侧壁面仅离开很少的距离、例如0.5~1mm的距离相对的状态被保持在上述图1所示的基板保持台13的表面上形成的凹部上。
在图1的成膜装置10中,在上述鼓泡器14A中被来自管线14a的CO气体鼓泡的Ru3(CO)12气相原料与管线14d的高浓度CO载气一起,被供给至上述处理容器12中,上述Ru3(CO)12原料在上述被处理基板W的表面上,按照如下的反应式,分解释放出CO,在上述晶片W上生成金属Ru膜21的堆积。其中,可知,上述金属Ru膜21的通过上述反应式的堆积,是在上述基板保持台13的表面上发生的。
Ru3(CO)12→3Ru+12CO (1)
如果气氛中CO分压低,式(1)的反应向右进行,促进Ru的析出,如果气氛中的CO分压高,就会妨碍向右进行。同样的反应也在使用W、Ni、Mo、Co、Rh、Re、Cr等羰基金属原料进行的金属膜的成膜时发生。
即,在使用这样的羰基金属原料堆积金属膜时,通过控制气氛中CO的分压,就能够控制金属膜的堆积反应。因此,在图1的成膜装置10中,在载气使用CO气体,增大羰基金属原料的输送中的CO分压,抑制在输送通路中羰基金属原料的分解和金属膜的堆积。
通过上述式(1)的反应进行的上述Ru3(CO)12原料的堆积和分解,是在上述处理容器12中,在例如图2中所示的包含上述晶片W的周边部的上述基板保持台13上发生的,但本发明人在以本发明为基础的研究当中发现,如在上述图2中所示,在上述基板保持台13的表面上形成的凹部中,沿着上述晶片周边部的区域,与上述晶片的周边部和上述凹部内壁之间的距离适当的情况下,通过上述Ru3(CO)12分解释放出的CO气体会聚集,使局部的CO浓度增大,由此会在特别是箭头A所指的被处理基板外周部向下倾斜的斜面处,抑制Ru膜的成膜。
在此见解的基础上,本发明提供了在通过羰基金属原料的分解而在晶片上形成金属膜时,能够可靠地抑制在上述晶片的周边部的金属膜的堆积的成膜装置和成膜方法。
图3表示本发明的发明人,在以本发明为基础的研究中,对在160℃、180℃、200℃和250℃的基板温度下,由此通过Ru3(CO)12原料分解产生的Ru膜的堆积速度与气氛中CO分压的关系研究的结果。
参照图3可以看出,无论在任何的基板温度下,当降低CO分压时就开始Ru的堆积,CO分压降低得越多,Ru膜的堆积速度就增大。
可以看出,例如在基板温度为180℃的情况下,气氛中的CO分压在130Pa以上,不会出现Ru膜的堆积(堆积速度为0),与此相反,当CO分压达到上述130Pa时,就以有限的堆积速度开始Ru膜的堆积。
另外,通过上述图3的关系可以看出,在例如CO分压为50mTorr的情况下,在200℃的温度下,以大约3.9nm/分钟的第一堆积速度DR1堆积Ru膜,而在通过此反应释放出的CO气体自由逃散受到妨碍的情况下,如粗箭头所示,CO分压在产生上述Ru膜的成膜的部分附近局部增大。在例如上述CO分压局部增大到大约130mTorr的情况下,通过上述反应式(1)进行的金属Ru膜的堆积速度,同样在200℃的温度下,降低到大约2.4nm/分钟的第二堆积速度DR2。
另外,在该局部的CO浓度增大到大约130mTorr的气氛中,在更低的例如180℃的温度下保持晶片的情况下,如在图3中所看到的,通过上述反应式(1)进行的金属Ru膜的堆积速度R3为0,可以抑制金属Ru膜在上述晶片上的堆积。
因此,本发明在被处理基板,即晶片的外周部形成了抑制在按照上述反应式(1)堆积Ru金属膜的情况下作为反应生成物释放出的CO气体自由逃散的结构,特别是通过将该结构的温度设定得高于上述晶片的温度,抑制了在上述晶片的外周部的金属膜的堆积。
[第一实施方式]
图4是表示在上述图1的成膜装置10中使用的,本发明的第一实施方式的基板保持台23的大致结构的图。
参照图4,上述基板保持台23,包括支撑部23A,其被埋设的第一电阻加热器(未图示)加热到温度T1,具有与所述晶片W的外径大致相等的尺寸,支撑上述晶片W,在上述支撑部23A的外侧设有环状的温度控制部23B,其与上述支撑部23A相接设置,被第二电阻加热器(未图示)加热到高于上述温度T1的温度T3(T1<T3)。
在上述温度控制部23B的外侧,形成构成上述基板保持台23的外周部的外周部件23C,在上述外周部件23C的外侧设有覆盖上述外周部件23C的侧壁面和上面,还覆盖上述温度控制部23B上面的大部分的盖体23D。
上述盖体23D,在其内侧前端部,具有与被支撑于上述支撑部23A上的晶片W的侧壁面相对的内壁面23d,其从上述晶片W的外周面仅离开0.5mm的距离D,为例如1mm的高度。结果,在上述晶片W的外周面和上述盖体23D之间,与上述晶片W上面的处理空间相连通地形成纵横比大约为2的小空间23S。
上述盖体23D通过部件23e卡合在上述外周部件23C的上面,在上述外周部23C的上面和上述盖体23D的下面之间形成尺寸大约为0.05~0.5mm的间隙d。
在如上所述的结构中,为了向上述处理空间散热,在温度为T1的支撑部23A上保持的上述晶片W,保持在低于上述温度T1的温度T2,而上述温度控制部,如在前面所说明的,保持在高于上述温度T1的温度T3,结果在上述温度T1、T2和T3之间,不等式T3>T1>T2成立。
在上述外周部件23C中埋设有第三电阻加热器(未图示),上述第三电阻加热器维持上述外周部件23C的温度为低于上述温度T1的温度T4(T4≤T2),上述第二加热器协助维持上述温度控制部23B的温度T3为所需的高温。
例如,上述支撑部23A的温度T1设定为225℃,在此情况下,上述晶片W的温度T2维持在198℃。
因此,当参照前面说明的图3的关系时,将上述温度控制部23B的温度设定得高于上述温度T1,例如为250℃,由此促进上述Ru3(CO)12原料在沿着上述晶片W外周部的上述空间23S中分解,由于此分解的结果妨碍作为反应生成物生成的CO的逃散,所以局部增大了在上述空间23S中CO分压,抑制了金属Ru膜在维持在更低温度T1的晶片W的侧壁面上的堆积。
[第二实施方式]
图5是表示按照本发明第二实施方式的基板保持台33大致结构的图。对在此图中与前面说明过的部分相对应的部分赋予同样的参照符号,省略说明。
参照图5,在上述基板保持台33中,在上述支撑部23A和外周部件23C之间的温度控制部23B被省略,上述外周部件23C邻接覆盖上述支撑部23A的外侧。
另一方面,在图5的结构中,在上述盖体23D中埋设有未图示的电阻加热器,由此将上述盖体23D的温度升高到高于上述支撑部23A的温度T1的温度T3。
上述盖体23D,其前端部在外周部呈环状覆盖在上述晶片W的上面,其与上述晶片W的上面之间,形成宽度d的空间,与露出上述晶片W的处理空间相连通。
因此,在这样的结构中,在上述盖体23D覆盖的上述晶片周边部分Wa中,通过将与晶片表面相对的盖体23D表面的温度升高到高于上述晶片主要部分的温度T1的温度,促进了在盖体23D表面上的上述Ru3(CO)12原料的分解,可局部增大上述空间中CO的浓度。由此,如在图6中所示,在上述被处理基板W中,可使Ru膜在上述外周部Wa的堆积受到抑制。
[第三实施方式]
图7表示本发明第三实施方式的基板保持台43的结构。在此图中,对前面说明过的部分赋予相同的参照符号,省略说明。
参照图7,在本实施方式中,上述晶片W的上面由能够上下移动的压紧环23E保持,上述压紧环23E在图中所示的下降位置上与上述晶片W卡合,而在省略了图示的上升位置释放上述晶片W。
上述压紧环23E在图中所示的下降位置,与在上述支撑部23A的外侧形成为环状、并被电阻加热器RA保持在温度T5的热源23F接触,由此加热至上述温度T3(T3<T5)。
在图7的结构中,上述支撑部23A被加热器RA加热到上述温度T1(T2<T1<T3)。
根据这样的结构,能够固定住上述热源23F,使上述压紧环23E的结构简单化。
在图7中所示的结构中,通过使上述压紧环23E构成为:在其下降位置离开上述晶片W表面,由此也可以制成与图5实质上同样的结构。
[第四实施方式]
图8表示本发明第四实施方式的基板保持台53的结构。
参照图8,基板保持台53,其结构实际上与前面图2中说明的结构相同,上述晶片W被保持在上述基板保持台13上形成的凹部中,与形成该凹部的内壁面的距离D为0.5mm,结果在上述晶片W的外周部分,形成与上述晶片W的处理空间相连通的环状空间13D,其宽度与深度之比为大约2。
在图8的结构中,特别是在基板保持台13上不设置高温部,而是形成这样的环状空间13D,通过抑制在该部分的羰基金属原料分解产生的CO逃散,就能够抑制在上述晶片W外周部上的金属Ru膜的堆积。
此外,在上述各个实施方式中,举例说明了由Ru3(CO)12原料进行的金属Ru膜的成膜,但本发明并不限于这些特定的例子,从其他的羰基金属原料,比如W(CO)6、Ni(CO)4、Mo(CO)6、Co2(CO)8、Rh4(CO)12、Re2(CO)10和Cr(CO)6分别形成W膜、Ni膜、Mo膜、Co膜、Rh膜、Re膜、Cr膜也是适用的。
以上说明了本发明的优选实施方式,但本发明并不限于这些特定的实施方式,在权利要求的范围所述的主旨思想内,可进行各式各样的改变或变更。
本发明主张平成19年3月28日申请的特愿2007-085022的优先权,包括其全部内容。
Claims (14)
1.一种成膜方法,其向被处理基板的表面供给羰基金属原料的气相分子,通过在所述被处理基板表面附近使其分解,在所述被处理基板的表面堆积金属膜,其特征在于,
包括在所述处理基板表面堆积金属层时,在与所述被处理基板的外周部邻接的区域,使所述羰基金属原料优先分解的工序,
在所述被处理基板外周部附近,使得在气氛中CO浓度局部增大,抑制金属膜在所述外周部的堆积。
2.如权利要求1所述的成膜方法,其特征在于,使堆积在与所述被处理基板外周部邻接的区域的所述羰基金属原料优先分解的工序包括:将与所述被处理基板外周部邻接的区域的温度升高到高于所述被处理基板表面的温度的工序。
3.如权利要求1所述的成膜方法,其特征在于,使堆积在与所述被处理基板外周部邻接的区域的所述羰基金属原料优先分解的工序包括:在所述外周部附近,形成与面对所述被处理基板的主要部分的第一气氛空间相连通、并且体积小于所述第一气氛空间的第二气氛空间的工序。
4.如权利要求3所述的成膜方法,其特征在于,所述形成第二气氛空间的工序包括:在形成有对应于所述被处理基板的凹部的基板保持台上,以所述被处理基板的外周面与所述凹部的内周面相对的方式配置所述被处理基板的工序。
5.如权利要求3所述的成膜方法,其特征在于,所述形成第二气氛空间的工序包括:配置覆盖所述被处理基板的外周部的盖部件的工序。
6.如权利要求2所述的成膜方法,其特征在于,使与所述被处理基板的外周部邻接的区域的温度高于所述被处理基板表面的温度的工序包括:配置覆盖所述被处理基板的外周部的盖部件,使所述盖部件的温度高于所述被处理基板表面的温度的工序。
7.一种成膜装置,包括:
具备保持被处理基板的基板保持台的处理容器;
对所述处理容器进行排气的排气系统;
向所述处理容器供给羰基金属原料气体的第一气体供给系统;和
向所述处理容器供给抑制所述羰基金属原料的分解的气体的第二气体供给系统,其特征在于,
所述基板保持台,包括支撑部和温度控制部,所述支撑部具有与所述被处理基板的外径相对应的尺寸,支撑所述被处理基板,所述温度控制部与所述支撑部相接并包围所述支撑部,
所述温度控制部,在通过所述羰基金属原料分解而在所述被处理基板上形成金属膜时,被保持在高于所述支撑部的温度。
8.如权利要求7所述的成膜装置,其特征在于,所述温度控制部与所述支撑部形成在同一个面上,在与所述支撑部不同的加热区域。
9.如权利要求7所述的成膜装置,其特征在于,所述温度控制部还包括与所述支撑部上的所述被处理基板的外周面相对的相对面,所述相对面与所述外周面之间形成有与所述处理容器内的处理空间连通、比所述处理空间容积小的空间。
10.如权利要求9所述的成膜装置,其特征在于,所述相对面与所述外周面仅离开0.5~1mm的距离而形成。
11.如权利要求7所述的成膜装置,其特征在于,所述温度控制部包括离开所述被处理基板的外周面并覆盖所述外周面的盖部件,在形成所述金属膜时,所述盖部件保持在高于所述支撑部的温度。
12.如权利要求11所述的成膜装置,其特征在于,在形成所述金属膜时,所述盖部件与所述外周面仅离开0.5~1mm的距离而配设。
13.如权利要求7所述的成膜装置,其特征在于,所述温度控制部由与所述被处理基板的外周面相接并覆盖所述外周面的压紧环构成,在形成所述金属膜时,所述压紧环保持在高于所述支撑部的温度。
14.如权利要求13所述的成膜装置,其特征在于,所述压紧环能够在与所述被处理基板的外周面相接的第一位置和离开所述外周面的第二位置之间上下移动,在所述第一位置与热源接触,被加热到高于所述支撑部的温度。
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2007
- 2007-03-28 JP JP2007085022A patent/JP5236197B2/ja active Active
-
2008
- 2008-02-19 EP EP08711581A patent/EP2067875A4/en not_active Withdrawn
- 2008-02-19 CN CN2008800001488A patent/CN101542016B/zh active Active
- 2008-02-19 WO PCT/JP2008/052757 patent/WO2008117590A1/ja active Application Filing
- 2008-02-19 US US12/443,487 patent/US8277889B2/en active Active
- 2008-02-19 KR KR1020087024696A patent/KR101062586B1/ko active IP Right Grant
- 2008-03-27 TW TW097111065A patent/TWI440092B/zh active
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104152862A (zh) * | 2013-05-14 | 2014-11-19 | 世界中心科技股份有限公司 | 用于光电半导体工艺的沉积设备及其遮覆框 |
CN104152862B (zh) * | 2013-05-14 | 2017-03-01 | 世界中心科技股份有限公司 | 用于光电半导体工艺的沉积设备及其遮覆框 |
Also Published As
Publication number | Publication date |
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US20100075035A1 (en) | 2010-03-25 |
WO2008117590A1 (ja) | 2008-10-02 |
KR20080106572A (ko) | 2008-12-08 |
JP2008240108A (ja) | 2008-10-09 |
CN101542016B (zh) | 2011-08-24 |
EP2067875A1 (en) | 2009-06-10 |
KR101062586B1 (ko) | 2011-09-06 |
TW200849398A (en) | 2008-12-16 |
EP2067875A4 (en) | 2011-09-07 |
TWI440092B (zh) | 2014-06-01 |
US8277889B2 (en) | 2012-10-02 |
JP5236197B2 (ja) | 2013-07-17 |
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