CN101541439A - 用于通过化学镀铜形成图案化铜线条的系统和方法 - Google Patents
用于通过化学镀铜形成图案化铜线条的系统和方法 Download PDFInfo
- Publication number
- CN101541439A CN101541439A CNA2006800316031A CN200680031603A CN101541439A CN 101541439 A CN101541439 A CN 101541439A CN A2006800316031 A CNA2006800316031 A CN A2006800316031A CN 200680031603 A CN200680031603 A CN 200680031603A CN 101541439 A CN101541439 A CN 101541439A
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- copper
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- chamber
- plating bath
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- 229910052802 copper Inorganic materials 0.000 title claims abstract description 100
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- 238000007747 plating Methods 0.000 title claims abstract description 89
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- 150000003254 radicals Chemical class 0.000 description 6
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- 238000006243 chemical reaction Methods 0.000 description 4
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- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 3
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- XLJKHNWPARRRJB-UHFFFAOYSA-N cobalt(2+) Chemical compound [Co+2] XLJKHNWPARRRJB-UHFFFAOYSA-N 0.000 description 3
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- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
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- RPNUMPOLZDHAAY-UHFFFAOYSA-N Diethylenetriamine Chemical compound NCCNCCN RPNUMPOLZDHAAY-UHFFFAOYSA-N 0.000 description 1
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- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
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- 229910052734 helium Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
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- 238000007654 immersion Methods 0.000 description 1
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- 230000004048 modification Effects 0.000 description 1
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- DDTIGTPWGISMKL-UHFFFAOYSA-N molybdenum nickel Chemical compound [Ni].[Mo] DDTIGTPWGISMKL-UHFFFAOYSA-N 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
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- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
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Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1646—Characteristics of the product obtained
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- C23C18/1651—Two or more layers only obtained by electroless plating
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
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- C23C18/1893—Multistep pretreatment with use of organic or inorganic compounds other than metals, first
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Abstract
一种在基片上形成铜的方法,包括将铜源溶液输入混合器,将还原溶液输入该混合器,混合该铜源溶液和该还原溶液以形成pH值大于大约6.5的镀液,以及将该镀液应用于基片,该基片包括催化层,其中将该镀液应用于基片包括形成催化层、在受控环境中保持该催化层以及在该催化层上形成铜。还公开了一种用于形成铜结构的系统。
Description
技术领域
本发明大体上涉及半导体制造工艺,更具体地,涉及用于通过化学镀铜形成图案化铜线条的系统和方法。
背景技术
用在内部连线(interconnect)处理工艺中的铜线条的形成通常通过双重镶嵌(dual damascene)工艺完成,其中沟槽(trenches)在介电材料中形成,沉积阻挡金属和铜,从而填充这些沟槽,并且形成覆盖层。在邻近这些沟槽的场区域内的覆盖层通常使用化学-机械平面化工艺去除。不同水平的沟槽通过填充有铜的通孔连接,这些已为本领域的技术人员所知道和理解。
随着其介电常数值变得越来越低,金属间电介质变得更加脆弱、疏松,并且与用来蚀刻、清洁和平面化这些材料的标准处理技术的相容性更低,因此双镶嵌技术的集成变得更加困难。此外,这些低K材料逐渐增加的多孔性受到所遇到的集成问题的限制。希望完全除去介电材料,而且是用空气间隙作为铜线条之间的电介质,但是直到现在也没有可用的集成方案可以实现空气间隙电介质。
通常,化学镀铜使用在带有还原剂的碱性溶液中的铜离子溶液。基片(如半导体晶片)设在该碱性溶液中。在基片上存有催化表面的情况下,铜离子被还原剂还原,以在基片表面上形成铜层或膜。
醛(如,甲醛)溶液是在化学镀溶液中使用的常见的还原剂。甲醛基本上将铜离子还原为铜元素。不幸的是,这个还原过程产生氢,氢会被结合在铜的基体中,从而可产生气孔以及导致沉积的铜层的质量降低。
通常的碱性溶液化学镀铜处理工艺的另一个限制包括产生的铜氧化层的相对低的生长率。例如,通常的碱性溶液化学镀铜具有的最大生长率大约为100-500埃每分钟。这个受限制的增长率要求非常多的时间以生长厚膜(如,大于约100微米厚度)。由于生长率如此有限,通常的碱性溶液化学镀铜处理工艺要求批晶片处理,以获得显著的晶片产量。然而,批晶片处理可能很难准确地以及可重复地产生贯穿每批晶片的希望的处理结果。
通常的碱性溶液化学镀铜的再一个限制是碱性溶液的碱性特性。希望形成特定的铜结构(如,图案化铜线条)而不是均一的铜垫层(如,当考虑空气间隙电介质或其它工艺时)。应用于光刻胶层的光刻处理工艺可形成预先图案化的特征。通常的碱性溶液化学镀铜处理工艺要求这些结构在通常的光刻胶图案化处理工艺中形成。不幸的是,光刻胶非常容易与碱性溶液反应并且会被碱性溶液的碱性特性大大损伤或者甚至完全破坏。结果,必须首先在该光刻胶图案上形成不会与该碱性溶液反应的保护层。该保护层保护该光刻胶图案在化学镀铜处理工艺过程中不会被通常的碱性溶液所损伤。
或者,该光刻胶可用来将图案传递到材料的下层,该材料与该碱性化学镀的化学性质相容。然后,去除光刻胶并且以所需铜结构的正图像形成铜线条。在这种情况下,该图案化层是低K材料,其变成内部连线层的完整部分,或者是可以去除的牺牲材料。无论哪一种情况,去除该材料比去除先前形成的光刻胶图案困难。
如上所述,需要一种简化的用于通过化学镀铜形成图案化铜线条的系统和方法,其也实现超过500埃每分钟的生长并且允许在铜线条之间的空气间隙电介质隔离。
发明内容
总的来说,本发明通过提供一种通过化学镀铜形成图案化铜线条的系统和方法来满足这些需求。应当理解的是,本发明可以许多方式实现,包括作为工艺,装置,系统,计算机可读介质或者设备。下面描述本发明的多个创新性的实施方式。
一个实施方式提供了用于在基片上形成铜的方法,包括将铜源溶液输入混合器,将还原溶液输入混合器,混和该铜源溶液和该还原溶液以形成pH值大于6.5的镀液,以及将该镀液应用于基片,该基片包括催化层,其中将该镀液应用于该基片包括在催化层上形成铜。
该镀液的形成可基本上与将该镀液应用于该基片同时进行。该镀液所具有的pH值可在大约7.2到大约7.8之间。在该催化层上形成铜后可将该镀液丢弃。
该基片可包括图案化光刻胶层,并且其中该图案化光刻胶层暴露该催化层的第一部分,以及其中将该镀液应用于该基片可包括在该催化层的第一部分上形成铜。该方法也可包括从该基片去除镀液,冲洗该基片和干燥该基片。
该方法还可包括去除该图案化光刻胶。去除该图案化光刻胶暴露该催化层的第二部分。该催化层的第二部分也可去除。
该镀液与未保护的光刻胶相容。在该催化层上形成的铜基本上是元素铜。在该催化层上形成的铜基本上不包含氢。
在该催化层上形成的铜以大于500埃每分钟的速率形成。该镀液可通过动态流体弯液面应用于该基片,以及其中该动态流体弯液面在临近头和基片的表面之间形成。该铜源溶液可包括氧化铜源,络合剂,pH调节剂和卤化物离子。该还原溶液可包括还原离子。
该催化层可包括一个或多个层。该催化层可包括底部抗反射涂层(BARC)。
另一个实施方式提供了一种用于在基片上形成图案化铜结构的方法。该方法包括接收基片,该基片包括形成在其上的催化层和形成在该催化层上的图案化光刻胶层。该图案化光刻胶层暴露该催化层的第一部分以及该图案化光刻胶层覆盖该催化层的第二部分。铜源溶液被输入到混合器中以及还原溶液被输入到该混合器中。该铜源溶液与该还原溶液混合,以形成pH值在大约7.2和大约7.8之间的镀液。将该镀液应用在基片上包括在该催化层的第一部分上形成铜。
又一个实施方式提供了一种处理工具,其包括低压处理室、大气压处理室、与低压处理室和该大气压处理室的每个相连接的转移室,该转移室包括受控的环境。该转移室提供用于将基片从该低压处理室转移到该大气压处理室的受控的环境。控制器也与该低压处理室、该大气压处理室和该转移室相连接。该控制器包括控制每个低压处理室、该大气压处理室和该转移室的逻辑。
该低压处理室可包括一个以上低压处理室,其可包括等离子体蚀刻/去除室,并且该大气压处理室可包括镀铜室。该镀铜室可包括混合器。该等离子体室可以是下游等离子体室。至少一个蚀刻/去除室可以是湿处理室。
该转移室包括输入/输出模块。该控制系统可包括配置(recipe),其包括用于将图案化基片载入该镀铜室的逻辑,用于将铜源溶液输入该混合器的逻辑,用于将还原溶液输入该混合器的逻辑,用于混合该铜源溶液和该还原溶液以形成pH值大于大约6.5的镀液的逻辑;以及用于将该镀液应用于图案化基片的逻辑,该图案化基片包括催化层,其中将镀液应用于该基片包括在该催化层上形成铜。
该图案化基片可包括在该催化层上形成的图案化光刻胶层,其中该图案化光刻胶层暴露该催化层的第一部分,以及其中该图案化光刻胶层覆盖催化层的第二部分。该等离子体室可以是下游等离子体室。
通过下面结合附图的详细描述,作为本发明原理的示例的说明,本发明的其它方面和优点将变得显而易见。
附图说明
本发明通过下面结合附图的详细描述将会被容易地理解。
图1是流程图,其说明了根据本发明的一个实施方式在非碱性化学镀铜中形成铜结构所执行的方法操作;
图2A到2F说明了根据本发明的一个实施方式在基片上形成的铜结构;
图3是流程图,其说明了根据本发明的一个实施方式在高速率非碱性化学镀铜工艺中执行的方法操作;
图4A是根据本发明的一个实施方式的镀处理工具的简化的示意图;
图4B说明了根据本发明的一个实施方式,示范性的可由临近头实施的基片处理的优选实施方式;
图5是根据本发明的一个实施方式的模块化处理工具的简化的示意图;
图6是根据本发明的一个实施方式,示范性的下游等离子体室的简化示意图。
具体实施方式
现在将描述用于通过化学镀铜形成图案化铜线条的系统和方法的多个示范性实施方式。显然,对于本领域的技术人员而言,可以不使用此处阐述的具体细节的一些或全部而实现本发明。
本发明提供用于改进的化学镀铜处理工艺的系统和方法,该处理工艺基本上不与光刻胶反应并且可允许高于约500埃每分钟的生长率。这种较高的生长率允许对于单一晶片处理的有效产量,而不是通常的批晶片处理,虽然应当理解本发明也可用于批(如,多个晶片)处理。
该高速率、化学镀处理工艺可包括悬浮于基本上中性或者甚至酸性溶液中的铜离子。该中性或酸性溶液不与光刻胶反应。所以,光刻胶图案可用来直接限定需要的铜结构而不需要额外的处理步骤来在光刻胶上增加保护层和/或利用不与现有技术的碱性、化学镀溶液反应的材料形成图案。
该高速率、化学镀处理工艺可形成高达约2500埃每分钟的铜层。该高速率、化学镀工艺可因此比通常的碱性溶液化学镀铜处理工艺快得多地形成较厚的铜层。结果,该高速率、化学镀处理工艺可用于形成较厚的铜结构,而通常的碱性溶液化学镀铜工艺则不能。
高速率、化学镀处理工艺可包括使用钴离子(如,Co+,Co+2和Co+3)而不是用醛作为还原剂。基本上,钴离子将铜氧化物还原为元素铜时产生最少的氢。
由于高速率、化学镀处理工艺可使用光刻胶图案以直接形成需要的铜结构,所以不再需要使用上述的双重镶嵌工艺方法以形成传统的镶嵌铜线所需要的多个工艺步骤。具体地,不需要保护层来保护光刻胶。此外,也免去了去除图案化材料的蚀刻工艺。这也允许改良的整体路径或工艺以减少处理工艺操作,并由此减少生产时间以及增加产量。
由该高速率、化学镀处理工艺形成的铜结构可包括引线键合垫(wire-bond pads)和球栅阵列(ball grid array),其可用于与集成电路封装中的或者3-D封装内部连线中的集成电路形成电连接。独立的铜结构也可在金属线条之间形成和使用空气间隙,以减少金属与金属间隔的介电常数。例如,当形成空气间隙电介质时,可利用特征预图案化该基片,这些特征是用于该空气间隙或低K电介质的“占位者(placeholder)”。这些占位者可以很容易地去除。这些预图案化特征可由光刻处理工艺在光刻胶中形成,由此避免蚀刻图案化步骤。
图1是流程图,其说明根据本发明的一个实施方式,在非碱性化学镀铜中形成铜结构所执行的方法操作100。图2A到2F说明根据本发明的一个实施方式,在基片(如,晶片)200上形成的铜结构208。在操作105中,接收基片200。该基片200预先准备好以形成铜内部连线结构。这个预先的准备可通过任何适合的方法执行。
现在参考图1和2A,在操作110中,在基片200上形成催化层202。催化层202可以是任何适合的材料或材料和材料层的组合。例如,催化层202可由钽、钌、镍、镍钼、钛、氮化钛或其它适合的催化材料组成。该催化层202可以是尽可能的薄(例如,原子或分子的单层)或者是在单层和到约500埃之间的厚度。也可使用多层的组合。例如可以在基片200上形成钽层并且在该钽层上形成钌层。该钽层可以是大约360埃或甚至更薄。该钌层可用来保护该钽层免于形成例如氧化钽。该钌层可以是大约150埃或甚至更薄。
形成该催化层202也可包括形成可选的抗反射涂层(例如,BARC)204。该BARC层204可以是例如大约600埃厚度。这个BARC层204为本领域所熟知,其用于通过在曝光步骤期间减小相长干涉和相消干涉来提供改进的光刻性能。
在操作115中,光刻胶层206在催化层202上形成。该光刻胶层206可以是大约6000埃厚或者更厚或更薄。光刻胶层206可以是任何本领域所公知的适合的光刻胶材料。在操作120,图案化该光刻胶层206。如果包括该BARC层,则图案化该光刻胶层206也包括图案化该可选BARC层204。
现参考图1和2B,在操作125,去除该不需要的光刻胶层206部分,仅留下需要的光刻胶层部分206A。可选的BARC层204的曝光部分204A通过等离子体蚀刻处理工艺去除。例如,可以使用Lam Research Corporation 2300等离子体蚀刻机去除该BARC,其使用的设置为:20摄氏度,40-100毫托,200-700W@27MHz,500-100W@2MHz,100-500sccm 氩,0-100sccmCF4,0-30sccm氧,0-150sccm氮,0-150sccm氢和0-10sccmC4F8,持续时间大约20到大约90秒之间。取决对材料的要求,可使用上面列出的气体和设置的多种组合和排列。应当理解的是,本领域的技术人员也可使用电感耦合等离子体源(例如,从LamResearch的VersysTM等离子体处理室获得)去除该BARC。
现参考图1和2C,在操作130中,如有必要,去除该催化层202的暴露部分202A上的任何氧化物或其它残余物。一种去除该催化层的暴露部分202A上的任何氧化物或其它残余物的方法包括向催化层的暴露部分202A施加等离子体生成的自由基。例如,通过施加在Lam 2300微波剥除室(或类似的室)中生成的自由基来去除在暴露部分202A上的氧化物和其它剩余物,并利用以下制法(recipe):在1托下,氦载体气体中700sccm浓度为3.9%的氢,1kW,持续大约5分钟。氨(NH3)或一氧化碳(CO)可以用于替代该3.9%氢气或与该3.9%氢气组合使用。或者,在高温可使用100%氢气。例如,在大约50到大约300C之间,然而,温度上限由光刻胶和BARC材料经受高温条件的性能确定。更多的变化可包括用以去除任何有机污染物的短的受控等离子体氧化过程,接着是上述的还原操作以转换(即,还原)氧化物,其可形成至它们各自的元素金属状态。在操作132,在受控的环境(即,原位以维持低氧和低湿度水平)中将该基片转移到化学镀处理室。这确保在操作130中形成的还原的表面保持为催化层。
现在参考图1和2D,在操作135,非碱性化学镀铜处理工艺应用于该基片200,以形成铜结构208。下面在图3中更详细地描述该非碱性化学镀铜处理工艺。该非碱性化学镀铜处理工艺每分钟可生成500到2000埃的元素铜。该非碱性化学镀铜处理工艺可在垂直或水平浸没类型的应用中应用于该基片200。或者,该非碱性化学镀铜处理工艺可通过动态流体弯液面(以下将更详细描述)应用于该基片200。
现参考图1和2E,在操作140,去除该光刻胶层的剩余部分206A以暴露催化层的部分202B。如果包括可选的BARC层204,那么当该光刻胶层的剩余部分206A被去除时或随后被去除时,也去除该可选BARC层的剩余部分204B。该光刻胶和该BARC层可利用等离子体方法去除。任选地,可使用水、半水(semi-aqueous)或非水(non-aqueous)溶剂执行湿化学光刻胶去除步骤。用于去除该剩余光刻胶206A和该可选的BARC层的剩余部分204B的一种示范性制法包括低于30摄氏度的温度,大约5毫托的压力,大约50sccm流率的氩和350sccm的氧,利用在大约27MHz的约1000-1400W源功率施加约3分钟。接着,在高于30摄氏度的温度,大约50毫托压力,大约50sccm流率的氩和350sccm氧,利用在大约27MHz的1200W源功率加上约500W的偏置功率施加约30秒。这个额外的偏置功率导致蚀刻处理工艺更指向铜结构208之间的间距210中。例如,可使用Lam Research Corporation 2300等离子体蚀刻机去除BARC,其利用如下设置:大约20摄氏度,40-100毫托,200-700W@27MHz,500-100W@2MHz,100-500sccm氩,0-100sccmCF4,0-30sccm氧,0-150sccm氮,0-150sccm氢和0-10sccmC4F8,持续大约20到大约90秒。取决于材料的要求,可使用上面列出的气体和设置的各种组合和排列。应当理解的是,本领域的技术人员也可使用电感耦合等离子体源(例如,从Lam的VersysTM等离子体处理室获得)去除该BARC。
现在参考图1和2F,在操作145,去除催化层202的暴露部分202B。去除该催化层202的暴露部分202B基本上防止该催化层的暴露部分与剩余的独立的铜结构208电连接。使用Lam 2300Versys等离子体蚀刻机去除该催化层202的暴露部分202B的示范性制法包括大约20到大约50摄氏度的温度,大约500W源功率和大约20-100W偏置功率,大约50毫托压力,以及大约30sccm流率的CF4和大约75sccm的氩,持续时间大约1分钟。其它包含卤素的气体如C4F8或含卤素气体的混合物如CF4+HBr,可用来增加到CF4或者替代CF4。该独立的铜结构208包括催化层的剩余部分202C。在该独立的铜结构208之间形成空气间隙210。该空气间隙210可允许空气电介质用于后来的在该独立的铜结构208上形成的结构中。该空气间隙210的宽度可在小于大约10纳米之间或更大。该独立的铜结构208可以具有任何需要的宽度。例如,该独立的铜结构208可以在小于大约10nm和大于大约100nm之间。该独立的铜结构208的宽度可以是大约300nm或更大。该独立的铜结构208的最大宽度仅由基片的宽度限制。
在上面的操作140中,光刻胶206A的去除可根据要求(例如,最小化对该铜结构208的损伤或者有利于这些铜结构208之间的光刻胶的完全去除),利用或者不利用偏置功率执行。结果,可增加包括应用500W偏置的短的光刻胶去除操作以进一步去除在铜结构208之间的光刻胶206A及其任何残余物。如果也应用钌层以保护该催化层,则应用该500W偏置也将去除该钌。
操作105-145中的每个涉及低于大约300摄氏度的低温,以基本上限制可能在更高温发生的铜的迁移。该BARC的去除和预处理操作也在低温执行,从而限制光刻胶在更高温下的网状化。
图3是说明了根据本发明的一个实施方式,在高速率非碱性化学镀铜工艺中执行的方法操作135的流程图。图4A是根据本发明的一个实施方式,镀处理工具400的简化的示意图。该镀处理工具400包括第一源410和第二源412。该第一源410包括一定量的第一源材料410A。该第二源412包括一些第二源材料412A。该第一源410和该第二源412与混合器416连接。该混合器416与镀室402连接。该镀处理工具400还可包括冲洗溶液源440,其与该镀室402连接。该冲洗溶液源440可提供一定量的冲洗溶液440A。
该镀处理工具400还可包括控制器430。该控制器430与该镀室和该混合器416连接。该控制器430根据包括在该控制器中的配置432控制在该镀处理工具400中的操作(例如,混合、填充、冲洗等)。
现参考图3和4A,在操作305,基片200设在用于镀操作的镀室402中。
在操作310和315,该混合器416混合第一源材料410A和第二源材料412A,以形成镀液416A。该第一源材料410A是相对于该铜离子(例如,Co2+)的还原离子。该第二源材料412A包括氧化铜源(例如,Cu2+)、络合剂(例如,乙二胺,二乙烯三胺)、pH调节剂(例如,HNO3,H2SO4,HCl等)和卤化物离子(例如,Br-,Cl-等)。关于铜镀液的进一步的细节和例子在共有美国专利申请11/382,906(Vaskelis等人的主题为Plating Solution for ElectrolessDeposition of Copper,在2006年5月11日递交)和共有美国专利申请11/427,266(Dordi等人的主题为Plating Solution for ElectrolessDeposition of Copper,在2006年6月28日递交)中更详细地描述,为了所有目的将其整体通过引用结合入此处。本申请还涉及共有美国专利申请11/398,254,Jeffrey Marks的主题为Methods andApparatus for Fabricating Conductive Features on Glass Substratesused in Liquid Crystal Displays,于2006年4月4日递交,为了所有目的将其整体通过引用结合入此处。
在操作320,该镀液416A从该混合器416输出进入镀室402,在该镀室402中将该镀液应用于该基片200。该混合器416根据该镀室402中的需要混合该第一源材料410A和该第二源材料412A。该镀液416A的pH值大于大约6.5并且在至少一个实施方式中pH值在大约7.2到大约7.8的范围内。该镀液416A形成一层元素铜,其基本上没有任何由包含氢导致的气孔。
在操作325,该基片200从该镀液416A中去除。从该镀液416A中去除基片200可包括从该镀室402中去除该基片200和/或从该镀室402中去除镀液416A。
在操作330,该基片200在冲洗溶液中冲洗。例如,在操作325,该镀液426A可从该镀室402中去除,并且该冲洗溶液440A可输入到该镀室中,以基本上将任何剩余的镀液416A冲离该基片200。
在操作335,可干燥基片200。例如,基片200可从镀室402去除并且放在第二室中(例如,旋转、冲洗和干燥室)用于冲洗和干燥。或者,该镀室402可包括冲洗和干燥该基片200所需的机构。
举例来说,该镀室402可包括临近头450,其能够冲洗和干燥该基片200。该临近头450也可将该镀液应用于该基片。
图4B说明根据本发明的一个实施方式,可由临近头450实施的示范性的基片处理的一个实施方式。尽管图4B显示出正在处理的基片200的顶部表面458a,但应当理解的是对于该基片200的底部表面458b,该基片处理以基本上相同的方式完成。虽然图4B说明了基片干燥过程,但许多其它的制造过程也可以类似的方式应用于该基片表面。可使用源入口462来向基片200的顶部表面458a应用异丙醇(IPA)蒸汽,并且可使用源入口466向基片200的顶部表面458a应用去离子水(DIW)或其它处理化学制剂。另外,可利用源出口464向紧密临近该晶片表面的区域应用真空,以去除位于顶部表面458a上或者接近该顶部表面458a的流体或者蒸汽。应当理解的是,可使用源入口和源出口的任何适合的组合,只要存在至少一种组合,其中,源入口462中的至少一个临近该源出口464中的至少一个,而该源出口464中的至少一个相应地邻近该源入口466中的至少一个。该IPA可以是任何适合的形式,如,IPA蒸汽,其中蒸汽形式的IPA通过使用N2载体气体输入。此外,尽管这里使用DIW,但是可以使用任何其它适合的可实现或者加强晶片处理的流体,例如,以其它方式纯化的水、清洗液以及其它处理液和化学制剂。在一个实施方式中,可通过该源入口462提供IPA蒸汽流460,可通过该源出口464应用真空472,以及可通过该源入口466提供DIW流474。因此,如果流体膜存留在该基片200上,则可由该IPA流入(inflow)460向该基片表面施加第一流体压力,通过该DIW流入474向该基片表面施加第二流体压力,以及可通过真空472施加第三流体压力以去除该DIW、IPA蒸汽和在该基片表面上的流体膜。
所以,在一个实施方式中,随着该DIW流入474和该IPA蒸汽流入460被向着晶片表面施加,在该晶片表面的任何流体与该DIW流入474混合。此时,向着该晶片表面施加的DIW流入474遇到该IPA蒸汽流入460。该IPA与该DIW流入474形成界面478(也称为IPA/DIW界面478)以及与真空472一起帮助将DIW流入474与任何其它流体一起从该基片200的表面上去除。该IPA蒸汽/DIW界面478减小该DIW的张力表面。在操作中,该DIW被向着该基片表面施加并且与该基片表面上的流体一起由应用在该源出口464的真空立即去除。向着该基片表面施加的该DIW,持续一段时间地驻留在邻近头和该基片表面之间的区域,并且与在基片表面上的任何流体一起形成弯液面476,其中该弯液面476的边界是该IPA/DIW界面478。所以,弯液面476是向着该表面上施加并且基本上与在该基片表面上的任何流体被同时去除的流体的恒定流。该DIW几乎立即地从该基片表面的去除,防止了在正被处理的基片表面区域上形成流体滴,由此减小污染物在该基片上200上被干燥的可能性。IPA蒸汽向下喷射的压力(其由该IPA蒸汽的流率导致)也帮助包含该弯液面476。
用于IPA蒸汽的N2载体气体的流率有助于使水流移出或推出在临近头和该基片表面之间的区域,并进入该源出口304,这些流体可通过该源出口304从该临近头输出。所以,随着该IPA蒸汽和该DIW被吸入该源出口464,构成该IPA/DIW界面478的边界并不是连续的边界,因为气体(例如,空气)与这些流体一起吸入该源出口464。在一个实施方式中,随着真空从该源出口464吸入该DIW、IPA蒸汽和在该基片表面上的流体,进入该源出口464的流是不连续的。这种流的不连续性类似于当真空施加在流体和气体的组合时通过稻草向上吸流体和气体。从而,随着该邻近头450移动,该弯液面476与该临近头一起移动,并且先前被该弯液面占据的区域由于该IPA蒸汽/DIW界面478的移动而被处理和干燥。还应当理解的是,根据这些设备的构造以及所需的弯液面的大小和形状,可使用任何适合数量的源入口462、源出口464和源入口466。在另一个实施方式中,该流体流率和该真空流率配置为进入该真空出口的总的流体流是连续的,因而没有气体流入该真空出口。
应当理解的是,只要可以维持弯液面476,任何适合的流率可用于该IPA蒸汽、DIW和真空。在一个实施方式中,通过一组源入口466的DIW的流率在大约25ml每分钟到大约3000ml每分钟之间。通过该组源入口466的DIW的流率可以是大约400ml每分钟。应当理解的是这些流体的流率可根据该临近头尺寸而变化。在一个实施方式中,较大的头可具有比较小的临近头更大的流体流率。这是可能发生的,因为在一个实施方式中,较大的临近头具有更多的源入口462和466以及源出口464,较大的头具有较大的流量。
通过一组源入口462的IPA蒸汽的流率可以在大约1标准立方英尺每小时(SCFH)到大约100SCFH之间。该IPA流率是在大约5到50SCFH之间。通过一组源出口464的真空的流率是在大约10标准立方英尺每小时(SCFH)到大约1250SCFH之间。在一个优选的实施方式中,用于通过该组源出口464的真空流率是大约350SCFH。在一个示范性的实施方式中,流量计可用来测量该IPA蒸汽、DIW以及该真空的流率。
图5是根据本发明的一个实施方式,模块化处理工具500的简化的示意图。该模块化处理站500包括多个处理模块512-520、公共的转移室510和输入/输出模块502。该多个处理模块512-520可包括一个或多个低压处理室和大气处理室。该一个或多个低压处理室所具有的运行压力的范围是低于大气压的压力到低于约10mTorr的真空。该低压处理室可包括一个以上低压处理室,其包括等离子体室、包括混合器的镀铜室、沉积室。大气压处理室可包括一个或多个蚀刻/去除室。该模块化处理站500还包括控制器530,该控制器530可控制该多个处理模块512-520的每个、公共转移室510和该输入/输出模块502中的操作。控制器530可包括一个或多个配置532,其包括多个用于该多个处理模块512-520的每个、公共转移室510和该输入/输出模块502中的操作的参数。
该多个处理模块512-520中的一个或多个可支持蚀刻操作、清洁/冲洗/干燥操作、等离子体操作和该非碱性化学镀铜操作。举例来说,室518可以是等离子体室,室520可以是镀铜室(例如,镀处理工具400),室512可以是蚀刻/去除室,以及室514可以是适于沉积如上所述的阻挡层或BARC层或催化层的沉积室。
该公共转移室510可允许将一个或多个基片200转移进/出每个处理模块512-520,同时保持在该转移室510受控的环境中(例如,低氧和低水蒸气等级)。例如该转移室510可保持在需要的压力(例如,高于或低于大气压,真空)、需要的温度、选取的气体(例如,氩、氮、氦等,同时保持氧的浓度低于约2ppm)。
该等离子体室520可以是传统的等离子体室或者下游等离子体室。图6是根据本发明的一个实施方式,示范性的下游等离子体室600的简化的示意图。该下游等离子体室600包括处理室602。该处理室602包括支撑件630,其用于支撑在该处理室602中正被处理的基片200。该处理室602还包括等离子体室604,在该等离子体室604中生成等离子体604A。气体源606与该等离子体室604相连接,并且提供用于生成等离子体604A的气体。该等离子体604A产生自由基620,所述自由基从该等离子体室通过导管612传输并进入该处理室602。该处理室602还可包括分配设备(例如,喷头)614,其基本上纵贯该基片200均匀地分配该自由基620。该下游等离子体室600生成该自由基620而不将该基片200暴露于该等离子体604A的相对高的电势和温度。
考虑上面的实施方式,应当理解的是本发明可应用各种计算机实现的操作,包括在计算机系统中存储数据。这些操作是那些需要对物理量进行物理处理的操作。通常,尽管不是必须的,这些量的形式为能够存储、传递、合并、对比和其它处理的电或者磁信号。此外,执行的这些处理往往明确地用术语指代,如产生、识别、确定或对比。
这里描述的构成本发明一部分的任何操作是有用的机器操作。本发明还涉及用于执行这些操作的装置或设备。这些设备可以为需要的目的而专门构成,或其可以是通用计算机,其通过存储在计算机中的计算机程序有选择地激活或者配置。特别地,多种通用计算机可与根据这里的教导编写的计算机程序一起使用,或者更方便地,构造更专门的设备以执行所需的操作。
本发明也可实现为在计算机可读介质上的计算机可读代码。该计算机可读介质是任何数据存储装置,其可存储数据,这些数据之后可由计算机系统读取。该计算机可读介质的例子包括硬盘、网络连接存储(NAS)、只读存储器、随机访问存储器、CD-ROM、CD-R、CD-RW、磁带以及其它光学或非光学数据存储装置。该计算机可读介质也可在连接计算机系统的网络上分布,从而该计算机可读代码以分布式方式存储和执行。
可以进一步理解的是,由上面附图中的操作表示的这些指令不要求以说明的顺序执行,以及由这些操作表示的所有这些处理对于实施本发明可能不是必须的。此外,在上面任何附图中描述的工艺也可在软件中实现,该软件存储在RAM,ROM或硬盘的任何一个组合中。
尽管为了清楚理解的目的相当详细地描述了前述的发明,可以理解的是在所附权利要求的范围内可以实现某些变化和修改。因此,这些实施方式应该被认为是说明性的而非限制性的,并且本发明并不限于这里给出的细节,而是可以在所附权利要求的范围和等同物内修改。
Claims (20)
1.一种用于在基片上形成铜的方法,包括:
将铜源溶液输入混合器;
将还原溶液输入所述混合器;
将所述铜源溶液和所述还原溶液混合,以形成具有大于约6.5的pH值的镀液;以及
将所述镀液应用于基片,所述基片包括催化层,其中,将所述镀液应用于所述基片包括在所述催化层上形成铜。
2.根据权利要求1所述的方法,其中,产生所述镀液基本上与将所述镀液应用于所述基片同时进行。
3.根据权利要求1所述的方法,其中,所述镀液具有在大约7.2和大约7.8之间的pH值。
4.根据权利要求1所述的方法,进一步包括,在所述催化层上形成铜之后丢弃所述镀液。
5.根据权利要求1所述的方法,其中,所述基片包括图案化光刻胶层,以及其中,所述图案化光刻胶层暴露所述催化层的第一部分,以及其中,将所述镀液应用于所述基片包括在所述催化层的第一部分上形成铜。
6.根据权利要求5所述的方法,进一步包括:
从所述基片去除所述镀液;
冲洗所述基片;以及
干燥所述基片。
7.根据权利要求6所述的方法,进一步包括:
去除所述图案化光刻胶,其中,去除所述图案化光刻胶暴露所述催化层的第二部分;以及
去除所述催化层的第二部分。
8.根据权利要求5所述的方法,其中,所述镀液与无保护的光刻胶相容。
9.根据权利要求1所述的方法,其中,在所述催化层上形成的铜基本上是元素铜,其中,在所述催化层上形成的所述铜基本上不含氢。
10.根据权利要求1所述的方法,其中,在所述催化层上形成的铜以大于大约500埃每分钟的速率被形成。
11.根据权利要求1所述的方法,其中,所述铜源溶液包括:
氧化铜源;
络合剂;
pH调节剂;以及
卤化物离子。
12.用于在基片上形成图案化铜结构的方法,包括:
接收基片,所述基片包括:
形成在其上的催化层;以及
形成在所述催化层上的图案化光刻胶层,其中,所述图案化光刻胶层暴露所述催化层的第一部分,以及其中,所述图案化光刻胶层覆盖所述催化层的第二部分;
将铜源溶液输入混合器;
将还原溶液输入所述混合器;
将所述铜源溶液与所述还原溶液混合,以形成具有在大约7.2和大约7.8之间的pH值的镀液;以及
将所述镀液应用于基片,其中,将所述镀液应用于所述基片包括在所述催化层的第一部分上形成铜。
13.一种处理工具,包括:
低压处理室;
大气压处理室;
与所述低压处理室和所述大气压处理室的每个相连接的转移室,所述转移室包括受控的环境,所述转移室提供用于将基片从所述低压处理室转移到所述大气压处理室的受控的环境;以及
与所述低压处理室、所述大气压处理室和所述转移室相连接的控制器,所述控制器包括用于控制所述低压处理室、所述大气压处理室和所述转移室中的每一个的逻辑。
14.根据权利要求13所述的处理工具,其中,所述低压处理室包括一个以上的包括一个或多个等离子体蚀刻/去除室的低压处理室,以及所述大气压处理室包括镀铜室。
15.根据权利要求14所述的处理工具,其中,所述镀铜室包括混合器。
16.根据权利要求14所述的处理工具,其中,所述等离子体室是下游等离子体室。
17.根据权利要求14所述的处理工具,其中,所述蚀刻/去除室是湿处理室。
18.根据权利要求13所述的处理工具,其中,所述转移室包括输入/输出模块。
19.根据权利要求13所述的处理工具,其中,所述控制系统包括配置,所述配置包括:
用于将图案化基片载入所述镀铜室的逻辑;
用于将铜源溶液输入所述混合器的逻辑;
用于将还原溶液输入所述混合器的逻辑;
用于混合所述铜源溶液和所述还原溶液以形成具有大于约6.5的pH值的镀液的逻辑;以及
用于将所述镀液应用于图案化基片的逻辑,所述图案化基片包括催化层,其中,将所述镀液应用于所述基片包括在所述催化层上形成铜。
20.根据权利要求19所述的处理工具,其中,所述图案化基片包括在所述催化层上形成的图案化光刻胶层,其中,所述图案化光刻胶层暴露所述催化层的第一部分,以及其中,所述图案化光刻胶层覆盖所述催化层的第二部分。
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