CN101523557B - 一个晶体管的dram单元结构及其形成方法 - Google Patents

一个晶体管的dram单元结构及其形成方法 Download PDF

Info

Publication number
CN101523557B
CN101523557B CN2007800383098A CN200780038309A CN101523557B CN 101523557 B CN101523557 B CN 101523557B CN 2007800383098 A CN2007800383098 A CN 2007800383098A CN 200780038309 A CN200780038309 A CN 200780038309A CN 101523557 B CN101523557 B CN 101523557B
Authority
CN
China
Prior art keywords
source
region
drain region
drain
dram cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN2007800383098A
Other languages
English (en)
Chinese (zh)
Other versions
CN101523557A (zh
Inventor
J·D·伯纳特
B·A·温斯蒂亚德
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP USA Inc
Original Assignee
Freescale Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Freescale Semiconductor Inc filed Critical Freescale Semiconductor Inc
Publication of CN101523557A publication Critical patent/CN101523557A/zh
Application granted granted Critical
Publication of CN101523557B publication Critical patent/CN101523557B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/20—DRAM devices comprising floating-body transistors, e.g. floating-body cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/711—Insulated-gate field-effect transistors [IGFET] having floating bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/64—Electrodes comprising a Schottky barrier to a semiconductor
    • H10D64/647—Schottky drain or source electrodes for IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/10—Integrated device layouts
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/401—Indexing scheme relating to cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C2211/4016—Memory devices with silicon-on-insulator cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
CN2007800383098A 2006-10-31 2007-08-30 一个晶体管的dram单元结构及其形成方法 Active CN101523557B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/554,851 2006-10-31
US11/554,851 US7608898B2 (en) 2006-10-31 2006-10-31 One transistor DRAM cell structure
PCT/US2007/077170 WO2008054919A1 (en) 2006-10-31 2007-08-30 One transistor dram cell structure and method for forming

Publications (2)

Publication Number Publication Date
CN101523557A CN101523557A (zh) 2009-09-02
CN101523557B true CN101523557B (zh) 2011-01-26

Family

ID=39329076

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2007800383098A Active CN101523557B (zh) 2006-10-31 2007-08-30 一个晶体管的dram单元结构及其形成方法

Country Status (7)

Country Link
US (2) US7608898B2 (enExample)
EP (1) EP2080217A4 (enExample)
JP (1) JP5317353B2 (enExample)
KR (1) KR101389293B1 (enExample)
CN (1) CN101523557B (enExample)
TW (1) TWI441319B (enExample)
WO (1) WO2008054919A1 (enExample)

Families Citing this family (54)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7606066B2 (en) 2005-09-07 2009-10-20 Innovative Silicon Isi Sa Memory cell and memory cell array having an electrically floating body transistor, and methods of operating same
US7492632B2 (en) 2006-04-07 2009-02-17 Innovative Silicon Isi Sa Memory array having a programmable word length, and method of operating same
WO2007128738A1 (en) 2006-05-02 2007-11-15 Innovative Silicon Sa Semiconductor memory cell and array using punch-through to program and read same
US8069377B2 (en) 2006-06-26 2011-11-29 Micron Technology, Inc. Integrated circuit having memory array including ECC and column redundancy and method of operating the same
KR101277402B1 (ko) 2007-01-26 2013-06-20 마이크론 테크놀로지, 인코포레이티드 게이트형 바디 영역으로부터 격리되는 소스/드레인 영역을 포함하는 플로팅-바디 ｄｒａｍ 트랜지스터
US8518774B2 (en) * 2007-03-29 2013-08-27 Micron Technology, Inc. Manufacturing process for zero-capacitor random access memory circuits
US8064274B2 (en) 2007-05-30 2011-11-22 Micron Technology, Inc. Integrated circuit having voltage generation circuitry for memory cell array, and method of operating and/or controlling same
US8085594B2 (en) 2007-06-01 2011-12-27 Micron Technology, Inc. Reading technique for memory cell with electrically floating body transistor
WO2009039169A1 (en) 2007-09-17 2009-03-26 Innovative Silicon S.A. Refreshing data of memory cells with electrically floating body transistors
US8536628B2 (en) 2007-11-29 2013-09-17 Micron Technology, Inc. Integrated circuit having memory cell array including barriers, and method of manufacturing same
US8349662B2 (en) 2007-12-11 2013-01-08 Micron Technology, Inc. Integrated circuit having memory cell array, and method of manufacturing same
US8773933B2 (en) 2012-03-16 2014-07-08 Micron Technology, Inc. Techniques for accessing memory cells
US8014195B2 (en) 2008-02-06 2011-09-06 Micron Technology, Inc. Single transistor memory cell
US8189376B2 (en) 2008-02-08 2012-05-29 Micron Technology, Inc. Integrated circuit having memory cells including gate material having high work function, and method of manufacturing same
US7957206B2 (en) 2008-04-04 2011-06-07 Micron Technology, Inc. Read circuitry for an integrated circuit having memory cells and/or a memory cell array, and method of operating same
US7947543B2 (en) 2008-09-25 2011-05-24 Micron Technology, Inc. Recessed gate silicon-on-insulator floating body device with self-aligned lateral isolation
US7933140B2 (en) * 2008-10-02 2011-04-26 Micron Technology, Inc. Techniques for reducing a voltage swing
US7924630B2 (en) 2008-10-15 2011-04-12 Micron Technology, Inc. Techniques for simultaneously driving a plurality of source lines
US8067803B2 (en) * 2008-10-16 2011-11-29 Micron Technology, Inc. Memory devices, transistor devices and related methods
US8223574B2 (en) 2008-11-05 2012-07-17 Micron Technology, Inc. Techniques for block refreshing a semiconductor memory device
US8213226B2 (en) 2008-12-05 2012-07-03 Micron Technology, Inc. Vertical transistor memory cell and array
US8319294B2 (en) 2009-02-18 2012-11-27 Micron Technology, Inc. Techniques for providing a source line plane
US8710566B2 (en) * 2009-03-04 2014-04-29 Micron Technology, Inc. Techniques for forming a contact to a buried diffusion layer in a semiconductor memory device
US8748959B2 (en) 2009-03-31 2014-06-10 Micron Technology, Inc. Semiconductor memory device
US8139418B2 (en) 2009-04-27 2012-03-20 Micron Technology, Inc. Techniques for controlling a direct injection semiconductor memory device
US8508994B2 (en) 2009-04-30 2013-08-13 Micron Technology, Inc. Semiconductor device with floating gate and electrically floating body
US8498157B2 (en) 2009-05-22 2013-07-30 Micron Technology, Inc. Techniques for providing a direct injection semiconductor memory device
US8537610B2 (en) 2009-07-10 2013-09-17 Micron Technology, Inc. Techniques for providing a semiconductor memory device
US9076543B2 (en) 2009-07-27 2015-07-07 Micron Technology, Inc. Techniques for providing a direct injection semiconductor memory device
US8199595B2 (en) 2009-09-04 2012-06-12 Micron Technology, Inc. Techniques for sensing a semiconductor memory device
CN102044433B (zh) * 2009-10-10 2013-02-27 复旦大学 一种混合源漏场效应晶体管及其制备方法
US8174881B2 (en) 2009-11-24 2012-05-08 Micron Technology, Inc. Techniques for reducing disturbance in a semiconductor device
US8310893B2 (en) 2009-12-16 2012-11-13 Micron Technology, Inc. Techniques for reducing impact of array disturbs in a semiconductor memory device
CN101777562B (zh) * 2010-01-15 2015-05-20 复旦大学 浮栅非挥发半导体存储器及其制造方法
CN101777586B (zh) * 2010-01-21 2012-11-21 复旦大学 一种混合结型源漏场效应晶体管及其制备方法
US8416636B2 (en) 2010-02-12 2013-04-09 Micron Technology, Inc. Techniques for controlling a semiconductor memory device
US8411513B2 (en) 2010-03-04 2013-04-02 Micron Technology, Inc. Techniques for providing a semiconductor memory device having hierarchical bit lines
US8576631B2 (en) 2010-03-04 2013-11-05 Micron Technology, Inc. Techniques for sensing a semiconductor memory device
US8369177B2 (en) 2010-03-05 2013-02-05 Micron Technology, Inc. Techniques for reading from and/or writing to a semiconductor memory device
WO2011115893A2 (en) 2010-03-15 2011-09-22 Micron Technology, Inc. Techniques for providing a semiconductor memory device
CN101807602A (zh) * 2010-03-25 2010-08-18 复旦大学 一种不对称型源漏场效应晶体管及其制备方法
CN101834141B (zh) * 2010-04-28 2015-03-04 复旦大学 一种不对称型源漏场效应晶体管的制备方法
US8411524B2 (en) 2010-05-06 2013-04-02 Micron Technology, Inc. Techniques for refreshing a semiconductor memory device
CN101887917A (zh) * 2010-06-10 2010-11-17 复旦大学 一种场效应晶体管及其制备方法
KR20120121139A (ko) * 2011-04-26 2012-11-05 송복남 비휘발성 메모리 소자의 구동 방법
US8531878B2 (en) 2011-05-17 2013-09-10 Micron Technology, Inc. Techniques for providing a semiconductor memory device
US9559216B2 (en) 2011-06-06 2017-01-31 Micron Technology, Inc. Semiconductor memory device and method for biasing same
US8514626B2 (en) 2011-07-26 2013-08-20 Micron Technology, Inc. Memory cells and methods of storing information
WO2014113572A1 (en) * 2013-01-16 2014-07-24 Maxlinear, Inc. Dynamic random access memory for communications systems
KR102415409B1 (ko) * 2015-09-09 2022-07-04 에스케이하이닉스 주식회사 이피롬 셀 및 그 제조방법과, 이피롬 셀 어레이
KR102226206B1 (ko) * 2020-02-06 2021-03-11 포항공과대학교 산학협력단 이중 pn 접합을 포함하는 메모리 소자 및 그 구동방법
CN113820531B (zh) * 2020-06-19 2024-07-12 拓荆科技股份有限公司 一种射频系统状态受控的半导体设备
US12453074B2 (en) 2022-10-24 2025-10-21 Eraytroniks Co., Ltd. Memory circuit, dynamic random access memory and operation method thereof
TWI845415B (zh) * 2022-10-24 2024-06-11 國立中央大學 記憶體電路、動態隨機存取記憶體及其操作方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6044011A (en) * 1998-05-08 2000-03-28 Micron Technology, Inc. Static-random-access-memory cell
US6353251B1 (en) * 1997-11-28 2002-03-05 Mitsuteru Kimura MOS gate Schottky tunnel transistor and an integrated circuit using the same
CN1815742A (zh) * 2004-12-15 2006-08-09 台湾积体电路制造股份有限公司 存储单元和形成一存储单元的方法

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5142903B1 (enExample) * 1970-02-12 1976-11-18
JP3039967B2 (ja) * 1990-08-03 2000-05-08 株式会社日立製作所 半導体装置
JPH06283546A (ja) * 1993-03-26 1994-10-07 Fuji Electric Co Ltd 半導体装置の電極引き出し方法
JP3243146B2 (ja) * 1994-12-08 2002-01-07 株式会社東芝 半導体装置
JP4216483B2 (ja) * 2001-02-15 2009-01-28 株式会社東芝 半導体メモリ装置
TW200305976A (en) * 2001-04-03 2003-11-01 Matsushita Electric Industrial Co Ltd Semiconductor device and method for fabricating the same
TWI230392B (en) * 2001-06-18 2005-04-01 Innovative Silicon Sa Semiconductor device
JP2003031693A (ja) * 2001-07-19 2003-01-31 Toshiba Corp 半導体メモリ装置
EP1357603A3 (en) 2002-04-18 2004-01-14 Innovative Silicon SA Semiconductor device
EP1355361A1 (fr) 2002-04-18 2003-10-22 Innovative Silicon SA Procédé pour créer une charge électrique dans le corps d'un composant semi-conducteur
US6835619B2 (en) * 2002-08-08 2004-12-28 Micron Technology, Inc. Method of forming a memory transistor comprising a Schottky contact
US6903969B2 (en) * 2002-08-30 2005-06-07 Micron Technology Inc. One-device non-volatile random access memory cell
JP2004140262A (ja) * 2002-10-18 2004-05-13 Fujitsu Ltd 半導体装置及びその製造方法
US6861689B2 (en) * 2002-11-08 2005-03-01 Freescale Semiconductor, Inc. One transistor DRAM cell structure and method for forming
US6768156B1 (en) * 2003-02-10 2004-07-27 Micron Technology, Inc. Non-volatile random access memory cells associated with thin film constructions
US7042052B2 (en) * 2003-02-10 2006-05-09 Micron Technology, Inc. Transistor constructions and electronic devices
US6714436B1 (en) * 2003-03-20 2004-03-30 Motorola, Inc. Write operation for capacitorless RAM
US20040228168A1 (en) * 2003-05-13 2004-11-18 Richard Ferrant Semiconductor memory device and method of operating same
US8125003B2 (en) * 2003-07-02 2012-02-28 Micron Technology, Inc. High-performance one-transistor memory cell
JP2005109233A (ja) * 2003-09-30 2005-04-21 Toshiba Corp 静電放電保護素子、静電放電保護回路、静電放電保護回路設計システム、静電放電保護回路設計方法及び静電放電保護回路設計プログラム
US20050077574A1 (en) * 2003-10-08 2005-04-14 Chandra Mouli 1T/0C RAM cell with a wrapped-around gate device structure
JP3898715B2 (ja) * 2004-09-09 2007-03-28 株式会社東芝 半導体装置およびその製造方法
KR100592740B1 (ko) * 2004-12-03 2006-06-26 한국전자통신연구원 쇼트키 장벽 관통 단전자 트랜지스터 및 그 제조방법
US20060125041A1 (en) * 2004-12-14 2006-06-15 Electronics And Telecommunications Research Institute Transistor using impact ionization and method of manufacturing the same
US7238555B2 (en) * 2005-06-30 2007-07-03 Freescale Semiconductor, Inc. Single transistor memory cell with reduced programming voltages

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6353251B1 (en) * 1997-11-28 2002-03-05 Mitsuteru Kimura MOS gate Schottky tunnel transistor and an integrated circuit using the same
US6044011A (en) * 1998-05-08 2000-03-28 Micron Technology, Inc. Static-random-access-memory cell
CN1815742A (zh) * 2004-12-15 2006-08-09 台湾积体电路制造股份有限公司 存储单元和形成一存储单元的方法

Also Published As

Publication number Publication date
CN101523557A (zh) 2009-09-02
WO2008054919A1 (en) 2008-05-08
US7608898B2 (en) 2009-10-27
US20080099808A1 (en) 2008-05-01
KR20090093938A (ko) 2009-09-02
EP2080217A1 (en) 2009-07-22
TWI441319B (zh) 2014-06-11
TW200834886A (en) 2008-08-16
JP2010508657A (ja) 2010-03-18
US8283244B2 (en) 2012-10-09
EP2080217A4 (en) 2009-10-21
KR101389293B1 (ko) 2014-04-25
US20100001326A1 (en) 2010-01-07
JP5317353B2 (ja) 2013-10-16

Similar Documents

Publication Publication Date Title
CN101523557B (zh) 一个晶体管的dram单元结构及其形成方法
US12094526B2 (en) Memory device comprising electrically floating body transistor
US20240395323A1 (en) Content Addressable Memory Device Having Electrically Floating Body Transistor
US6888739B2 (en) Nanocrystal write once read only memory for archival storage
US7477540B2 (en) Bipolar reading technique for a memory cell having an electrically floating body transistor
JP2815495B2 (ja) 半導体記憶装置
US20040130934A1 (en) NROM memory cell, memory array, related devices and methods
US20050057964A1 (en) Memory with charge storage locations and adjacent gate structures
US20060128104A1 (en) NROM memory cell, memory array, related devices and methods
KR100712089B1 (ko) 반도체메모리장치 및 그 제조방법
US20040233694A1 (en) Single bit nonvolatile memory cell and methods for programming and erasing thereof
US7710759B2 (en) Nonvolatile ferroelectric memory device
US7583538B2 (en) Semiconductor memory and read method of the same
US20060109713A1 (en) Memory Device
JP4745276B2 (ja) 半導体メモリ装置
JPH081947B2 (ja) ダイナミツク・ランダム・アクセス・メモリ
KR100892731B1 (ko) 1-트랜지스터형 디램 구동 방법
KR20060076662A (ko) 차지 트랩 인슐레이터 메모리 장치

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CP01 Change in the name or title of a patent holder

Address after: Texas in the United States

Patentee after: NXP America Co Ltd

Address before: Texas in the United States

Patentee before: Fisical Semiconductor Inc.

CP01 Change in the name or title of a patent holder