CN101517716B - 硅氧化膜的形成方法、等离子体处理装置 - Google Patents

硅氧化膜的形成方法、等离子体处理装置 Download PDF

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CN101517716B
CN101517716B CN2007800359879A CN200780035987A CN101517716B CN 101517716 B CN101517716 B CN 101517716B CN 2007800359879 A CN2007800359879 A CN 2007800359879A CN 200780035987 A CN200780035987 A CN 200780035987A CN 101517716 B CN101517716 B CN 101517716B
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silicon oxide
plasma
oxide film
gas
oxide layer
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CN101517716A (zh
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壁义郎
小林岳志
盐泽俊彦
北川淳一
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Tokyo Electron Ltd
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    • H—ELECTRICITY
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    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/17—Isolation regions comprising dielectric materials formed using trench refilling with dielectric materials, e.g. shallow trench isolations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/024—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET]
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    • H10D64/00—Electrodes of devices having potential barriers
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    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01332—Making the insulator
    • H10D64/01336—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid
    • H10D64/01346—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid in a gaseous ambient using an oxygen or a water vapour, e.g. oxidation through a layer
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    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01354—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon passivation or protection of the electrode, e.g. using re-oxidation
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    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6316—Formation by nitridation, e.g. nitridation of the substrate
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    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
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    • H10P14/6518—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer
    • H10P14/6524—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer the substance being nitrogen
    • H10P14/6526—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer the substance being nitrogen introduced into an oxide material, e.g. changing SiO to SiON
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    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6529—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour
    • H10P14/6532—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour by exposure to a plasma
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    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H10P14/6927—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being a silicon oxynitride, e.g. SiON or SiON:H
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    • H10P14/69—Inorganic materials
    • H10P14/694—Inorganic materials composed of nitrides
    • H10P14/6943—Inorganic materials composed of nitrides containing silicon
    • H10P14/69433—Inorganic materials composed of nitrides containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
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    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/014—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations
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    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/014—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations
    • H10W10/0145—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations of trenches having shapes other than rectangular or V-shape
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    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512—Disposition of the gate electrodes, e.g. buried gates
    • H10D64/513—Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates
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    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H10P14/6308—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors
    • H10P14/6309—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors of silicon in uncombined form, i.e. pure silicon
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    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6319—Formation by plasma treatments, e.g. plasma oxidation of the substrate
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    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2

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  • Formation Of Insulating Films (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Element Separation (AREA)
  • Chemical Vapour Deposition (AREA)
  • Semiconductor Memories (AREA)
CN2007800359879A 2006-09-29 2007-09-28 硅氧化膜的形成方法、等离子体处理装置 Expired - Fee Related CN101517716B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP267742/2006 2006-09-29
JP2006267742A JP5089121B2 (ja) 2006-09-29 2006-09-29 シリコン酸化膜の形成方法およびプラズマ処理装置
PCT/JP2007/069041 WO2008038787A1 (en) 2006-09-29 2007-09-28 Method for forming silicon oxide film, plasma processing apparatus and storage medium

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CN101517716A CN101517716A (zh) 2009-08-26
CN101517716B true CN101517716B (zh) 2011-08-17

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US (1) US8003484B2 (https=)
JP (1) JP5089121B2 (https=)
KR (1) KR101102690B1 (https=)
CN (1) CN101517716B (https=)
TW (1) TW200834729A (https=)
WO (1) WO2008038787A1 (https=)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006261217A (ja) * 2005-03-15 2006-09-28 Canon Anelva Corp 薄膜形成方法
JP5357487B2 (ja) 2008-09-30 2013-12-04 東京エレクトロン株式会社 シリコン酸化膜の形成方法、コンピュータ読み取り可能な記憶媒体およびプラズマ酸化処理装置
KR101120133B1 (ko) * 2009-05-13 2012-03-23 가천대학교 산학협력단 탄성기질의 표면 상에서의 나노구조의 조절성 제조
JP2011071353A (ja) * 2009-09-25 2011-04-07 Hitachi Kokusai Electric Inc 半導体装置の製造方法
CN108766887B (zh) 2018-05-25 2019-07-30 中国科学院微电子研究所 基于两步微波等离子体氧化的凹槽mosfet器件的制造方法
CN108666206B (zh) * 2018-05-25 2019-08-16 中国科学院微电子研究所 基于两步微波等离子体氧化的碳化硅氧化方法
KR102516580B1 (ko) * 2018-09-13 2023-03-30 가부시키가이샤 코쿠사이 엘렉트릭 반도체 장치의 제조 방법, 기판 처리 장치 및 기록 매체
US11049731B2 (en) * 2018-09-27 2021-06-29 Applied Materials, Inc. Methods for film modification
JP7500450B2 (ja) * 2021-01-21 2024-06-17 東京エレクトロン株式会社 プラズマ処理装置
CN113410126B (zh) * 2021-06-18 2024-03-08 上海华虹宏力半导体制造有限公司 热氧化工艺中自动调控硅氧化膜厚度的方法和系统
JP7530878B2 (ja) * 2021-09-30 2024-08-08 株式会社Kokusai Electric 半導体装置の製造方法、基板処理方法、基板処理装置、およびプログラム

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2768685B2 (ja) * 1988-03-28 1998-06-25 株式会社東芝 半導体装置の製造方法及びその装置
US5225036A (en) * 1988-03-28 1993-07-06 Kabushiki Kaisha Toshiba Method of manufacturing semiconductor device
US5756402A (en) * 1992-12-28 1998-05-26 Kabushiki Kaisha Toshiba Method of etching silicon nitride film
US6214736B1 (en) * 1998-10-15 2001-04-10 Texas Instruments Incorporated Silicon processing method
JP2000349285A (ja) 1999-06-04 2000-12-15 Hitachi Ltd 半導体集積回路装置の製造方法および半導体集積回路装置
TWI235433B (en) * 2002-07-17 2005-07-01 Tokyo Electron Ltd Oxide film forming method, oxide film forming apparatus and electronic device material
JP4280686B2 (ja) * 2004-06-30 2009-06-17 キヤノン株式会社 処理方法
WO2006025363A1 (ja) * 2004-08-31 2006-03-09 Tokyo Electron Limited シリコン酸化膜の形成方法、半導体装置の製造方法およびコンピュータ記憶媒体
JP5032056B2 (ja) * 2005-07-25 2012-09-26 株式会社東芝 不揮発性半導体メモリ装置の製造方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
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Publication number Publication date
JP2008091409A (ja) 2008-04-17
US8003484B2 (en) 2011-08-23
US20100093185A1 (en) 2010-04-15
WO2008038787A1 (en) 2008-04-03
CN101517716A (zh) 2009-08-26
KR101102690B1 (ko) 2012-01-05
JP5089121B2 (ja) 2012-12-05
KR20090043598A (ko) 2009-05-06
TW200834729A (en) 2008-08-16

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