JP5089121B2 - シリコン酸化膜の形成方法およびプラズマ処理装置 - Google Patents

シリコン酸化膜の形成方法およびプラズマ処理装置 Download PDF

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JP5089121B2
JP5089121B2 JP2006267742A JP2006267742A JP5089121B2 JP 5089121 B2 JP5089121 B2 JP 5089121B2 JP 2006267742 A JP2006267742 A JP 2006267742A JP 2006267742 A JP2006267742 A JP 2006267742A JP 5089121 B2 JP5089121 B2 JP 5089121B2
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oxide film
plasma
silicon oxide
gas
oxidation treatment
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JP2008091409A (ja
JP2008091409A5 (https=
Inventor
義郎 壁
岳志 小林
俊彦 塩澤
淳一 北川
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to KR1020097006183A priority patent/KR101102690B1/ko
Priority to CN2007800359879A priority patent/CN101517716B/zh
Priority to US12/443,044 priority patent/US8003484B2/en
Priority to PCT/JP2007/069041 priority patent/WO2008038787A1/ja
Priority to TW096136355A priority patent/TW200834729A/zh
Publication of JP2008091409A publication Critical patent/JP2008091409A/ja
Publication of JP2008091409A5 publication Critical patent/JP2008091409A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/17—Isolation regions comprising dielectric materials formed using trench refilling with dielectric materials, e.g. shallow trench isolations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/024—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01332—Making the insulator
    • H10D64/01336—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid
    • H10D64/01346—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid in a gaseous ambient using an oxygen or a water vapour, e.g. oxidation through a layer
    • H—ELECTRICITY
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01354—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon passivation or protection of the electrode, e.g. using re-oxidation
    • H—ELECTRICITY
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    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6316—Formation by nitridation, e.g. nitridation of the substrate
    • H—ELECTRICITY
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    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6518—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer
    • H10P14/6524—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer the substance being nitrogen
    • H10P14/6526—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer the substance being nitrogen introduced into an oxide material, e.g. changing SiO to SiON
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    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6529—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour
    • H10P14/6532—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour by exposure to a plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H10P14/6927—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being a silicon oxynitride, e.g. SiON or SiON:H
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    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/694—Inorganic materials composed of nitrides
    • H10P14/6943—Inorganic materials composed of nitrides containing silicon
    • H10P14/69433—Inorganic materials composed of nitrides containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
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    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/014—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/014—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations
    • H10W10/0145—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations of trenches having shapes other than rectangular or V-shape
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512—Disposition of the gate electrodes, e.g. buried gates
    • H10D64/513—Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates
    • H—ELECTRICITY
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    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H10P14/6308—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors
    • H10P14/6309—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors of silicon in uncombined form, i.e. pure silicon
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    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6319—Formation by plasma treatments, e.g. plasma oxidation of the substrate
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2

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  • Formation Of Insulating Films (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Element Separation (AREA)
  • Chemical Vapour Deposition (AREA)
  • Semiconductor Memories (AREA)
JP2006267742A 2006-09-29 2006-09-29 シリコン酸化膜の形成方法およびプラズマ処理装置 Expired - Fee Related JP5089121B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2006267742A JP5089121B2 (ja) 2006-09-29 2006-09-29 シリコン酸化膜の形成方法およびプラズマ処理装置
CN2007800359879A CN101517716B (zh) 2006-09-29 2007-09-28 硅氧化膜的形成方法、等离子体处理装置
US12/443,044 US8003484B2 (en) 2006-09-29 2007-09-28 Method for forming silicon oxide film, plasma processing apparatus and storage medium
PCT/JP2007/069041 WO2008038787A1 (en) 2006-09-29 2007-09-28 Method for forming silicon oxide film, plasma processing apparatus and storage medium
KR1020097006183A KR101102690B1 (ko) 2006-09-29 2007-09-28 실리콘 산화막의 형성 방법, 플라즈마 처리 장치 및 기억 매체
TW096136355A TW200834729A (en) 2006-09-29 2007-09-28 Method for forming silicon oxide film, plasma processing apparatus and storage medium

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006267742A JP5089121B2 (ja) 2006-09-29 2006-09-29 シリコン酸化膜の形成方法およびプラズマ処理装置

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JP2008091409A JP2008091409A (ja) 2008-04-17
JP2008091409A5 JP2008091409A5 (https=) 2009-07-30
JP5089121B2 true JP5089121B2 (ja) 2012-12-05

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US (1) US8003484B2 (https=)
JP (1) JP5089121B2 (https=)
KR (1) KR101102690B1 (https=)
CN (1) CN101517716B (https=)
TW (1) TW200834729A (https=)
WO (1) WO2008038787A1 (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006261217A (ja) * 2005-03-15 2006-09-28 Canon Anelva Corp 薄膜形成方法
JP5357487B2 (ja) 2008-09-30 2013-12-04 東京エレクトロン株式会社 シリコン酸化膜の形成方法、コンピュータ読み取り可能な記憶媒体およびプラズマ酸化処理装置
KR101120133B1 (ko) * 2009-05-13 2012-03-23 가천대학교 산학협력단 탄성기질의 표면 상에서의 나노구조의 조절성 제조
JP2011071353A (ja) * 2009-09-25 2011-04-07 Hitachi Kokusai Electric Inc 半導体装置の製造方法
CN108766887B (zh) 2018-05-25 2019-07-30 中国科学院微电子研究所 基于两步微波等离子体氧化的凹槽mosfet器件的制造方法
CN108666206B (zh) * 2018-05-25 2019-08-16 中国科学院微电子研究所 基于两步微波等离子体氧化的碳化硅氧化方法
KR102516580B1 (ko) * 2018-09-13 2023-03-30 가부시키가이샤 코쿠사이 엘렉트릭 반도체 장치의 제조 방법, 기판 처리 장치 및 기록 매체
US11049731B2 (en) * 2018-09-27 2021-06-29 Applied Materials, Inc. Methods for film modification
JP7500450B2 (ja) * 2021-01-21 2024-06-17 東京エレクトロン株式会社 プラズマ処理装置
CN113410126B (zh) * 2021-06-18 2024-03-08 上海华虹宏力半导体制造有限公司 热氧化工艺中自动调控硅氧化膜厚度的方法和系统
JP7530878B2 (ja) * 2021-09-30 2024-08-08 株式会社Kokusai Electric 半導体装置の製造方法、基板処理方法、基板処理装置、およびプログラム

Family Cites Families (9)

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Publication number Priority date Publication date Assignee Title
JP2768685B2 (ja) * 1988-03-28 1998-06-25 株式会社東芝 半導体装置の製造方法及びその装置
US5225036A (en) * 1988-03-28 1993-07-06 Kabushiki Kaisha Toshiba Method of manufacturing semiconductor device
US5756402A (en) * 1992-12-28 1998-05-26 Kabushiki Kaisha Toshiba Method of etching silicon nitride film
US6214736B1 (en) * 1998-10-15 2001-04-10 Texas Instruments Incorporated Silicon processing method
JP2000349285A (ja) 1999-06-04 2000-12-15 Hitachi Ltd 半導体集積回路装置の製造方法および半導体集積回路装置
TWI235433B (en) * 2002-07-17 2005-07-01 Tokyo Electron Ltd Oxide film forming method, oxide film forming apparatus and electronic device material
JP4280686B2 (ja) * 2004-06-30 2009-06-17 キヤノン株式会社 処理方法
WO2006025363A1 (ja) * 2004-08-31 2006-03-09 Tokyo Electron Limited シリコン酸化膜の形成方法、半導体装置の製造方法およびコンピュータ記憶媒体
JP5032056B2 (ja) * 2005-07-25 2012-09-26 株式会社東芝 不揮発性半導体メモリ装置の製造方法

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JP2008091409A (ja) 2008-04-17
US8003484B2 (en) 2011-08-23
US20100093185A1 (en) 2010-04-15
WO2008038787A1 (en) 2008-04-03
CN101517716A (zh) 2009-08-26
KR101102690B1 (ko) 2012-01-05
CN101517716B (zh) 2011-08-17
KR20090043598A (ko) 2009-05-06
TW200834729A (en) 2008-08-16

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