CN101506968B - 屏蔽浮栅隧穿元件结构 - Google Patents

屏蔽浮栅隧穿元件结构 Download PDF

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Publication number
CN101506968B
CN101506968B CN2007800311916A CN200780031191A CN101506968B CN 101506968 B CN101506968 B CN 101506968B CN 2007800311916 A CN2007800311916 A CN 2007800311916A CN 200780031191 A CN200780031191 A CN 200780031191A CN 101506968 B CN101506968 B CN 101506968B
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CN
China
Prior art keywords
floating boom
well region
floating gate
region
doped well
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Expired - Fee Related
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CN2007800311916A
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English (en)
Chinese (zh)
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CN101506968A (zh
Inventor
A·卡尔尼斯基
J·M·卡鲁索
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Intersil Americas LLC
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Intersil Americas LLC
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Publication of CN101506968A publication Critical patent/CN101506968A/zh
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
    • G11C27/005—Electric analogue stores, e.g. for storing instantaneous values with non-volatile charge storage, e.g. on floating gate or MNOS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/60—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the control gate being a doped region, e.g. single-poly memory cell
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • H10D30/683—Floating-gate IGFETs having only two programming levels programmed by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data

Landscapes

  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
CN2007800311916A 2006-08-21 2007-08-20 屏蔽浮栅隧穿元件结构 Expired - Fee Related CN101506968B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US83926206P 2006-08-21 2006-08-21
US60/839,262 2006-08-21
US11/639,658 2006-12-14
US11/639,658 US7759727B2 (en) 2006-08-21 2006-12-14 Method and apparatus for shielding tunneling circuit and floating gate for integration of a floating gate voltage reference in a general purpose CMOS technology
PCT/US2007/018442 WO2008024322A1 (en) 2006-08-21 2007-08-20 Shielding floating gate tunneling element structure

Publications (2)

Publication Number Publication Date
CN101506968A CN101506968A (zh) 2009-08-12
CN101506968B true CN101506968B (zh) 2012-08-22

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CN2007800311916A Expired - Fee Related CN101506968B (zh) 2006-08-21 2007-08-20 屏蔽浮栅隧穿元件结构

Country Status (6)

Country Link
US (1) US7759727B2 (https=)
EP (1) EP2067169A1 (https=)
JP (1) JP2010502013A (https=)
CN (1) CN101506968B (https=)
TW (1) TW200818410A (https=)
WO (1) WO2008024322A1 (https=)

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US7785952B2 (en) * 2007-10-16 2010-08-31 International Business Machines Corporation Partially and fully silicided gate stacks
GB2466777B (en) * 2008-12-30 2011-05-04 Wolfson Microelectronics Plc Apparatus and method for testing a transducer and/or electronic circuitry associated with a transducer
US9087587B2 (en) * 2013-03-15 2015-07-21 GlobalFoundries, Inc. Integrated circuits and methods for operating integrated circuits with non-volatile memory
US9312015B1 (en) * 2014-10-25 2016-04-12 Sandisk Technologies Inc. Methods for reducing body effect and increasing junction breakdown voltage
US9450052B1 (en) * 2015-07-01 2016-09-20 Chengdu Monolithic Power Systems Co., Ltd. EEPROM memory cell with a coupler region and method of making the same
CN109037225B (zh) * 2018-09-19 2023-09-12 长江存储科技有限责任公司 存储器结构
US10741611B1 (en) 2019-02-11 2020-08-11 International Business Machines Corporation Resistive processing units with complementary metal-oxide-semiconductor non-volatile analog memory
US11450677B2 (en) * 2020-11-09 2022-09-20 Globalfoundries Singapore Pte. Ltd. Partially silicided nonvolatile memory devices and integration schemes
CN115472699B (zh) * 2022-09-29 2025-12-23 西安电子科技大学 一种系pn结的复合结构mos抗辐照器件及制备方法

Citations (4)

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EP0889520A1 (en) * 1997-07-03 1999-01-07 STMicroelectronics S.r.l. Method of fabrication a non-volatile semiconductor memory device with shielded single polysilicon gate memory part
US6631087B2 (en) * 2000-06-23 2003-10-07 Gennum Corporation Low voltage single poly deep sub-micron flash eeprom
CN1536675A (zh) * 2003-04-07 2004-10-13 ��洢������˾ 具有独立可控的控制栅的双向读取/编程非易失性浮栅存储单元及其阵列和形成方法
US20050219912A1 (en) * 2002-04-15 2005-10-06 Philippe Gendrier Electrically erasable and programmable, non-volatile semiconductor memory device having a single layer of gate material, and corresponding memory plane

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JP3059442B2 (ja) * 1988-11-09 2000-07-04 株式会社日立製作所 半導体記憶装置
US4970565A (en) * 1988-09-01 1990-11-13 Atmel Corporation Sealed charge storage structure
JPH0357280A (ja) 1989-07-25 1991-03-12 Mitsubishi Electric Corp 不揮発性半導体記憶装置
US5576568A (en) * 1995-01-18 1996-11-19 Actel Corporation Single-transistor electrically-alterable switch employing fowler nordheim tunneling for program and erase
US6740573B2 (en) * 1995-02-17 2004-05-25 Micron Technology, Inc. Method for forming an integrated circuit interconnect using a dual poly process
US6157574A (en) * 1998-04-01 2000-12-05 National Semiconductor Corporation Erasable frohmann-bentchkowsky memory transistor that stores multiple bits of data
US6137723A (en) * 1998-04-01 2000-10-24 National Semiconductor Corporation Memory device having erasable Frohmann-Bentchkowsky EPROM cells that use a well-to-floating gate coupled voltage during erasure
US6055185A (en) * 1998-04-01 2000-04-25 National Semiconductor Corporation Single-poly EPROM cell with CMOS compatible programming voltages
US6172392B1 (en) 1999-03-29 2001-01-09 Vantis Corporation Boron doped silicon capacitor plate
US6500750B1 (en) * 1999-04-05 2002-12-31 Motorola, Inc. Semiconductor device and method of formation
US6238979B1 (en) * 2000-06-21 2001-05-29 National Semiconductor Corporation Process for fabricating EEPROM memory cell array embedded on core CMOS
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US6788574B1 (en) * 2001-12-06 2004-09-07 Virage Logic Corporation Electrically-alterable non-volatile memory cell
US6794236B1 (en) * 2002-06-03 2004-09-21 Lattice Semiconductor Corporation Eeprom device with improved capacitive coupling and fabrication process
DE10257870B4 (de) * 2002-12-11 2007-10-04 Infineon Technologies Ag Halbleiterstruktur mit einer integrierten Abschirmung
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JP2004296479A (ja) 2003-03-25 2004-10-21 Denso Corp 半導体装置及びその製造方法
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US7375393B1 (en) * 2005-01-27 2008-05-20 National Semiconductor Corporation Non-volatile memory (NVM) retention improvement utilizing protective electrical shield

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EP0889520A1 (en) * 1997-07-03 1999-01-07 STMicroelectronics S.r.l. Method of fabrication a non-volatile semiconductor memory device with shielded single polysilicon gate memory part
US6631087B2 (en) * 2000-06-23 2003-10-07 Gennum Corporation Low voltage single poly deep sub-micron flash eeprom
US20050219912A1 (en) * 2002-04-15 2005-10-06 Philippe Gendrier Electrically erasable and programmable, non-volatile semiconductor memory device having a single layer of gate material, and corresponding memory plane
CN1536675A (zh) * 2003-04-07 2004-10-13 ��洢������˾ 具有独立可控的控制栅的双向读取/编程非易失性浮栅存储单元及其阵列和形成方法

Non-Patent Citations (1)

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Also Published As

Publication number Publication date
CN101506968A (zh) 2009-08-12
WO2008024322A9 (en) 2008-04-10
JP2010502013A (ja) 2010-01-21
US7759727B2 (en) 2010-07-20
US20080044973A1 (en) 2008-02-21
WO2008024322A1 (en) 2008-02-28
EP2067169A1 (en) 2009-06-10
TW200818410A (en) 2008-04-16

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Granted publication date: 20120822

Termination date: 20130820