TW200818410A - Method and apparatus for shielding tunneling circuit and floating gate for integration of a floating gate voltage reference in a general purpose CMOS technology - Google Patents
Method and apparatus for shielding tunneling circuit and floating gate for integration of a floating gate voltage reference in a general purpose CMOS technology Download PDFInfo
- Publication number
- TW200818410A TW200818410A TW096129941A TW96129941A TW200818410A TW 200818410 A TW200818410 A TW 200818410A TW 096129941 A TW096129941 A TW 096129941A TW 96129941 A TW96129941 A TW 96129941A TW 200818410 A TW200818410 A TW 200818410A
- Authority
- TW
- Taiwan
- Prior art keywords
- floating gate
- region
- well region
- floating
- regions
- Prior art date
Links
- 238000007667 floating Methods 0.000 title claims abstract description 131
- 238000000034 method Methods 0.000 title claims abstract description 44
- 230000005641 tunneling Effects 0.000 title claims abstract description 31
- 238000005516 engineering process Methods 0.000 title description 12
- 230000010354 integration Effects 0.000 title description 2
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 230000008878 coupling Effects 0.000 claims abstract description 10
- 238000010168 coupling process Methods 0.000 claims abstract description 10
- 238000005859 coupling reaction Methods 0.000 claims abstract description 10
- 238000009792 diffusion process Methods 0.000 claims description 32
- 230000008569 process Effects 0.000 claims description 21
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 claims description 8
- 230000002940 repellent Effects 0.000 claims description 6
- 239000005871 repellent Substances 0.000 claims description 6
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 3
- 239000004575 stone Substances 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 2
- 241000380131 Ammophila arenaria Species 0.000 claims 1
- 230000006835 compression Effects 0.000 claims 1
- 238000007906 compression Methods 0.000 claims 1
- WNGVEMKUAGHAGP-UHFFFAOYSA-N oxotungsten;titanium Chemical compound [Ti].[W]=O WNGVEMKUAGHAGP-UHFFFAOYSA-N 0.000 claims 1
- 230000005689 Fowler Nordheim tunneling Effects 0.000 abstract description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 12
- 229920005591 polysilicon Polymers 0.000 description 12
- 239000003990 capacitor Substances 0.000 description 11
- 238000010586 diagram Methods 0.000 description 6
- 125000006850 spacer group Chemical group 0.000 description 4
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 4
- 238000002955 isolation Methods 0.000 description 3
- 229910001507 metal halide Inorganic materials 0.000 description 3
- 150000005309 metal halides Chemical class 0.000 description 3
- 230000002411 adverse Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 241001122767 Theaceae Species 0.000 description 1
- 229910008479 TiSi2 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- NMFHJNAPXOMSRX-PUPDPRJKSA-N [(1r)-3-(3,4-dimethoxyphenyl)-1-[3-(2-morpholin-4-ylethoxy)phenyl]propyl] (2s)-1-[(2s)-2-(3,4,5-trimethoxyphenyl)butanoyl]piperidine-2-carboxylate Chemical compound C([C@@H](OC(=O)[C@@H]1CCCCN1C(=O)[C@@H](CC)C=1C=C(OC)C(OC)=C(OC)C=1)C=1C=C(OCCN2CCOCC2)C=CC=1)CC1=CC=C(OC)C(OC)=C1 NMFHJNAPXOMSRX-PUPDPRJKSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- DFJQEGUNXWZVAH-UHFFFAOYSA-N bis($l^{2}-silanylidene)titanium Chemical compound [Si]=[Ti]=[Si] DFJQEGUNXWZVAH-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000006735 deficit Effects 0.000 description 1
- 210000003298 dental enamel Anatomy 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 210000004508 polar body Anatomy 0.000 description 1
- 238000011112 process operation Methods 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000010561 standard procedure Methods 0.000 description 1
- 210000004243 sweat Anatomy 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
- G11C27/005—Electric analogue stores, e.g. for storing instantaneous values with non-volatile charge storage, e.g. on floating gate or MNOS
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/60—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the control gate being a doped region, e.g. single-poly memory cell
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/68—Floating-gate IGFETs
- H10D30/681—Floating-gate IGFETs having only two programming levels
- H10D30/683—Floating-gate IGFETs having only two programming levels programmed by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
Landscapes
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US83926206P | 2006-08-21 | 2006-08-21 | |
| US11/639,658 US7759727B2 (en) | 2006-08-21 | 2006-12-14 | Method and apparatus for shielding tunneling circuit and floating gate for integration of a floating gate voltage reference in a general purpose CMOS technology |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW200818410A true TW200818410A (en) | 2008-04-16 |
Family
ID=38776179
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW096129941A TW200818410A (en) | 2006-08-21 | 2007-08-14 | Method and apparatus for shielding tunneling circuit and floating gate for integration of a floating gate voltage reference in a general purpose CMOS technology |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US7759727B2 (https=) |
| EP (1) | EP2067169A1 (https=) |
| JP (1) | JP2010502013A (https=) |
| CN (1) | CN101506968B (https=) |
| TW (1) | TW200818410A (https=) |
| WO (1) | WO2008024322A1 (https=) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7785952B2 (en) * | 2007-10-16 | 2010-08-31 | International Business Machines Corporation | Partially and fully silicided gate stacks |
| GB2466777B (en) * | 2008-12-30 | 2011-05-04 | Wolfson Microelectronics Plc | Apparatus and method for testing a transducer and/or electronic circuitry associated with a transducer |
| US9087587B2 (en) * | 2013-03-15 | 2015-07-21 | GlobalFoundries, Inc. | Integrated circuits and methods for operating integrated circuits with non-volatile memory |
| US9312015B1 (en) * | 2014-10-25 | 2016-04-12 | Sandisk Technologies Inc. | Methods for reducing body effect and increasing junction breakdown voltage |
| US9450052B1 (en) * | 2015-07-01 | 2016-09-20 | Chengdu Monolithic Power Systems Co., Ltd. | EEPROM memory cell with a coupler region and method of making the same |
| CN109037225B (zh) * | 2018-09-19 | 2023-09-12 | 长江存储科技有限责任公司 | 存储器结构 |
| US10741611B1 (en) | 2019-02-11 | 2020-08-11 | International Business Machines Corporation | Resistive processing units with complementary metal-oxide-semiconductor non-volatile analog memory |
| US11450677B2 (en) * | 2020-11-09 | 2022-09-20 | Globalfoundries Singapore Pte. Ltd. | Partially silicided nonvolatile memory devices and integration schemes |
| CN115472699B (zh) * | 2022-09-29 | 2025-12-23 | 西安电子科技大学 | 一种系pn结的复合结构mos抗辐照器件及制备方法 |
Family Cites Families (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3059442B2 (ja) * | 1988-11-09 | 2000-07-04 | 株式会社日立製作所 | 半導体記憶装置 |
| US4970565A (en) * | 1988-09-01 | 1990-11-13 | Atmel Corporation | Sealed charge storage structure |
| JPH0357280A (ja) | 1989-07-25 | 1991-03-12 | Mitsubishi Electric Corp | 不揮発性半導体記憶装置 |
| US5576568A (en) * | 1995-01-18 | 1996-11-19 | Actel Corporation | Single-transistor electrically-alterable switch employing fowler nordheim tunneling for program and erase |
| US6740573B2 (en) * | 1995-02-17 | 2004-05-25 | Micron Technology, Inc. | Method for forming an integrated circuit interconnect using a dual poly process |
| DE69734278D1 (de) * | 1997-07-03 | 2006-02-09 | St Microelectronics Srl | Herstellungsverfahren eines nichtflüchtigen Halbleiterspeicherbauelementes mit abgeschirmtem Einpolysiliziumgate-Speicherabschnitt |
| US6157574A (en) * | 1998-04-01 | 2000-12-05 | National Semiconductor Corporation | Erasable frohmann-bentchkowsky memory transistor that stores multiple bits of data |
| US6137723A (en) * | 1998-04-01 | 2000-10-24 | National Semiconductor Corporation | Memory device having erasable Frohmann-Bentchkowsky EPROM cells that use a well-to-floating gate coupled voltage during erasure |
| US6055185A (en) * | 1998-04-01 | 2000-04-25 | National Semiconductor Corporation | Single-poly EPROM cell with CMOS compatible programming voltages |
| US6172392B1 (en) | 1999-03-29 | 2001-01-09 | Vantis Corporation | Boron doped silicon capacitor plate |
| US6500750B1 (en) * | 1999-04-05 | 2002-12-31 | Motorola, Inc. | Semiconductor device and method of formation |
| US6238979B1 (en) * | 2000-06-21 | 2001-05-29 | National Semiconductor Corporation | Process for fabricating EEPROM memory cell array embedded on core CMOS |
| US6631087B2 (en) * | 2000-06-23 | 2003-10-07 | Gennum Corporation | Low voltage single poly deep sub-micron flash eeprom |
| US6512700B1 (en) * | 2001-09-20 | 2003-01-28 | Agere Systems Inc. | Non-volatile memory cell having channel initiated secondary electron injection programming mechanism |
| US6788574B1 (en) * | 2001-12-06 | 2004-09-07 | Virage Logic Corporation | Electrically-alterable non-volatile memory cell |
| FR2838554B1 (fr) * | 2002-04-15 | 2004-07-09 | St Microelectronics Sa | Dispositif semiconducteur de memoire, non volatile, programmable et effacable electriquement, a une seule couche de materiau de grille, et plan memoire correspondant |
| US6794236B1 (en) * | 2002-06-03 | 2004-09-21 | Lattice Semiconductor Corporation | Eeprom device with improved capacitive coupling and fabrication process |
| DE10257870B4 (de) * | 2002-12-11 | 2007-10-04 | Infineon Technologies Ag | Halbleiterstruktur mit einer integrierten Abschirmung |
| US6847551B2 (en) * | 2003-01-28 | 2005-01-25 | Xicor, Inc. | Apparatus for feedback using a tunnel device |
| JP2004296479A (ja) | 2003-03-25 | 2004-10-21 | Denso Corp | 半導体装置及びその製造方法 |
| US7190018B2 (en) * | 2003-04-07 | 2007-03-13 | Silicon Storage Technology, Inc. | Bi-directional read/program non-volatile floating gate memory cell with independent controllable control gates, and array thereof, and method of formation |
| US20060081910A1 (en) * | 2004-03-16 | 2006-04-20 | Andy Yu | Non-volatile electrically alterable memory cell for storing multiple data and an array thereof |
| US7099192B2 (en) * | 2004-06-07 | 2006-08-29 | Yield Microelectronics Corp. | Nonvolatile flash memory and method of operating the same |
| US7375393B1 (en) * | 2005-01-27 | 2008-05-20 | National Semiconductor Corporation | Non-volatile memory (NVM) retention improvement utilizing protective electrical shield |
-
2006
- 2006-12-14 US US11/639,658 patent/US7759727B2/en not_active Expired - Fee Related
-
2007
- 2007-08-14 TW TW096129941A patent/TW200818410A/zh unknown
- 2007-08-20 EP EP07811445A patent/EP2067169A1/en not_active Withdrawn
- 2007-08-20 JP JP2009525600A patent/JP2010502013A/ja active Pending
- 2007-08-20 CN CN2007800311916A patent/CN101506968B/zh not_active Expired - Fee Related
- 2007-08-20 WO PCT/US2007/018442 patent/WO2008024322A1/en not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| CN101506968B (zh) | 2012-08-22 |
| CN101506968A (zh) | 2009-08-12 |
| WO2008024322A9 (en) | 2008-04-10 |
| JP2010502013A (ja) | 2010-01-21 |
| US7759727B2 (en) | 2010-07-20 |
| US20080044973A1 (en) | 2008-02-21 |
| WO2008024322A1 (en) | 2008-02-28 |
| EP2067169A1 (en) | 2009-06-10 |
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