CN101497501B - Three-silver low radiation film glass - Google Patents
Three-silver low radiation film glass Download PDFInfo
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- CN101497501B CN101497501B CN2009101058511A CN200910105851A CN101497501B CN 101497501 B CN101497501 B CN 101497501B CN 2009101058511 A CN2009101058511 A CN 2009101058511A CN 200910105851 A CN200910105851 A CN 200910105851A CN 101497501 B CN101497501 B CN 101497501B
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- dielectric combination
- direct current
- combination layer
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Abstract
The invention provides a three-silver low radiation film glass. The film layer structure of the glass comprises glass, a first base layer dielectric combination layer, a first Ag layer, a first blocking layer, a first interlayer dielectric combination layer, a second Ag layer, a second blocking layer, a second interlayer dielectric combination layer, a third Ag layer, a third blocking layer, a first upper layer dielectric combination layer, and a second upper layer dielectric combination layer. The invention also provides a process for producing the glass. The three-silver low radiation film glass and the producing process thereof adopt a unique film layer configuration, the process and a method improve the prior low radiation film glass so that the product has low radiance and good selectivity coefficient Lsg; the indoor and outdoor colors of the glass are close to neutral color without interference colors; and the glass has excellent optical performance, various colors, weather resistance, and the like, and can be widely popularized and applied to vehicle glass and civil architecture glass.
Description
[technical field]
The present invention relates to the special glass field, relate in particular to a kind of three-silver low radiation film glass.
[background technology]
Three-silver low radiation film glass (claiming triple-silver LOW-E glass again) is that to be coated with the film that the multiple layer metal that comprises three layers of silver layer or other compounds form at glass surface be product.Because silver layer has the characteristic of low-E, low emissivity glass has high transmittance to visible light, and infrared rays is had very high reflectivity, has excellent heat insulation property.
The film layer structure that adopts the vacuum magnetic-control sputtering method to produce common three-silver low radiation film glass is generally: a glass/basic unit's dielectric combination layer/Ag layer/first blocking layer/first interlayer dielectric combination layer/the 2nd Ag layer/second blocking layer/second interlayer dielectric combination layer/the 3rd Ag layer/the 3rd blocking layer/upper strata dielectric combination layer etc.
Dielectric combination layer is generally metal or nonmetallic oxide compound or nitride, as TiO
2, ZnSnO
x, SnO
2, ZnO, SiO
2, Ta
2O
5, BiO
2, Al
2O
3, ZnAl
2O
4, Nb
2O
5, Si
3N
4, AZO etc.;
First blocking layer, second blocking layer and the 3rd blocking layer are generally metal or burning (nitrogenize) thing, also can be alloy or alloy oxidation (nitrogenize) things, as Ti, NiCr or NiCrO
x, NiCrN
x
But, in traditional low emissivity glass processing, in order to realize U value and selection coefficient Lsg preferably, just must increase the radiant ratio that silver thickness in the rete reduces the glass rete, select coefficient to obtain ideal, be restricted with regard to meaning the range of choice that visible light transmissivity reduces, appearance color presents interference color, color but increase silver thickness, can't reach the ideal overall target.
[summary of the invention]
The objective of the invention is to, adopt the unique film layer arrangement to go out a kind of three-silver low radiation glass, can promote the use of vehicle glass and covil construction glass.
To achieve the above object of the invention, the present invention proposes following technical scheme:
A kind of three-silver low radiation film glass, the film layer structure of this glass is: a glass/basic unit's dielectric combination layer/Ag layer/first blocking layer/first interlayer dielectric combination layer/the 2nd Ag layer/second blocking layer/second interlayer dielectric combination layer/the 3rd Ag layer/the 3rd blocking layer/first upper strata dielectric combination layer/second upper strata dielectric combination layer.
According to three-silver low radiation film glass provided by the present invention, described basic unit dielectric combination layer, the first interlayer dielectric combination layer, the second interlayer dielectric combination layer, the first upper strata dielectric combination layer, the second upper strata dielectric combination layer are to be made of metal or nonmetallic oxide compound or nitride, preferred TiO
2, ZnSnO
x, SnO
2, ZnO, SiO
2, Ta
2O
5, BiO
2, Al
2O
3, ZnAl
2O
4, Nb
2O
5, Si
3N
4, at least a among the AZO.
According to three-silver low radiation film glass provided by the present invention, described basic unit dielectric combination layer thickness is 10～30nm.
According to three-silver low radiation film glass provided by the present invention, the thickness of the described first interlayer dielectric combination layer is 38～90nm; The thickness of the second interlayer dielectric combination layer is 30～110nm.
According to three-silver low radiation film glass provided by the present invention, the thickness of the described first upper strata dielectric combination layer is 10～35nm; The thickness of the second upper strata dielectric combination layer is 10～30nm.
According to three-silver low radiation film glass provided by the present invention, the thickness of a described Ag layer, the 2nd Ag layer, the 3rd Ag layer is 8～35nm.
According to three-silver low radiation film glass provided by the present invention, the material on described first blocking layer, second blocking layer, the 3rd blocking layer is oxidation nickel chromium triangle or nitrogenize nickel chromium triangle, bed thickness 1～10nm.
The present invention also provides a kind of production technique of above-mentioned three-silver low radiation film glass, may further comprise the steps:
(1) parent glass cleaning-drying, and place the vacuum sputtering district;
(2) dual rotary negative electrode, intermediate frequency reaction magnetocontrol sputtering deposition basic unit dielectric combination layer;
(3) planar cathode or rotating cathode, direct current or direct current add pulsed magnetron sputtering and deposit an Ag layer;
(4) planar cathode or rotating cathode, direct current or direct current add pulsed magnetron sputtering and deposit first blocking layer;
(5) dual rotary negative electrode, intermediate frequency reaction magnetocontrol sputtering deposit the first interlayer dielectric combination layer;
(6) planar cathode or rotating cathode, direct current or direct current add pulsed magnetron sputtering and deposit the 2nd Ag layer;
(7) planar cathode or rotating cathode, direct current or direct current add pulsed magnetron sputtering and deposit second blocking layer;
(8) dual rotary negative electrode, intermediate frequency reaction magnetocontrol sputtering deposit the second interlayer dielectric combination layer;
(9) planar cathode or rotating cathode, direct current or direct current add pulsed magnetron sputtering and deposit the 3rd Ag layer;
(10) planar cathode or rotating cathode, direct current or direct current add pulsed magnetron sputtering and deposit the 3rd blocking layer;
(11) dual rotary negative electrode, intermediate frequency reaction magnetocontrol sputtering deposit first, second upper strata dielectric combination layer respectively.
According to the production technique of three-silver low radiation film glass provided by the present invention, described dual rotary negative electrode, intermediate frequency reaction magnetocontrol sputtering are to carry out in argon nitrogen or argon oxygen atmosphere, power 30kw-100kw, and the intermediate frequency power supply frequency is 30-50kHz.
According to the production technique of three-silver low radiation film glass provided by the present invention, it is to carry out power 2-8kw in argon oxygen atmosphere that described planar cathode or rotating cathode, direct current or direct current add pulsed magnetron sputtering.
As can be seen from the above technical solutions, three-silver low radiation film glass provided by the present invention and production technique thereof, adopted unique film layer structure, technology and method that traditional low radiation coated glass is improved, made product have low-E, good selection coefficient Lsg; The indoor and outdoor color of this glass has good optical stability, weathering resistance etc. near muted color and noiseless look, and color is various, but and wide popularization and application to vehicle glass and covil construction glass.
[description of drawings]
Shown in Figure 1 is the structural representation of three-silver low radiation film glass of the present invention;
Shown in Figure 2 is the technological process of production synoptic diagram of three-silver low radiation film glass of the present invention.
[embodiment]
The film layer structure of three-silver low radiation film glass provided by the invention is: glass substrate/basic unit's dielectric combination layer, (10～30nm)/the one Ag layers, (8～35nm)/the first blocking layer, (1～10nm)/the first interlayer dielectric combination layer, (38～90nm)/the 2nd Ag layers, (8～35nm)/the second blocking layer, (1～10nm)/the second interlayer dielectric combination layer, (30～110nm)/the 3rd Ag layers, (8～35nm)/the 3rd blocking layers, (1～10nm)/the first upper strata dielectric combination layer, (10～35nm)/the second upper strata dielectric combination layer, (10～30nm).
Each media coating is the sedimentary metal of vacuum sputtering or nonmetallic oxide compound or nitride, as TiO
2, ZnSnO
x, SnO
2, ZnO, SiO
2, Ta
2O
5, BiO
2, Al
2O
3, ZnAl
2O
4, Nb
2O
5, Si
3N
4, AZO etc.
In actual applications, film layer structure and the thickness of three-silver low radiation film glass commonly used are: glass substrate/basic unit's dielectric combination layer (15～17nm)/the one Ag layers (the 12～21nm)/the first barrier layer (the 1.5～2.0nm)/the first interlayer dielectric combination layer (58～60nm)/the 2nd Ag layers (the 12～21nm)/the second barrier layer (the 1.5～2.0nm)/the second interlayer dielectric combination layer (66～68nm)/the 3rd Ag layers (12～21nm)/the 3rd barrier layers (the 1.5～2.0nm)/the first upper strata dielectric combination layer (the 20～22nm)/the second upper strata dielectric combination layer (8～10nm).
Be the membrane structure of an application example of three-silver low radiation film glass provided by the invention below:
Glass substrate/ZnSnO
xLayer/Ag layer/NiCrO
xLayer/ZnSnO
xLayer/Ag/NiCrO
xLayer/ZnSnO
xLayer/Ag layer/NiCrO
xLayer/ZnSnO
xLayer/Si
3N
4Layer.
Wherein, basic unit's dielectric combination layer is zinc-tin oxide (ZnSnO
x) thicknesses of layers be 16nm;
First silver layer: thicknesses of layers is 12nm;
First blocking layer: main raw is the oxidation nickel chromium triangle, and thicknesses of layers is 2nm;
The first interlayer dielectric combination layer: the thicknesses of layers of zinc-tin oxide is 59nm;
Second silver layer: thicknesses of layers is 15nm;
Second blocking layer: main raw is the oxidation nickel chromium triangle, and thicknesses of layers is 2nm;
The second interlayer dielectric combination layer: the thicknesses of layers of zinc-tin oxide is 67nm;
The 3rd silver layer: thicknesses of layers is 21nm;
The 3rd blocking layer: main raw is the oxidation nickel chromium triangle, and thicknesses of layers is 2nm;
The first upper strata dielectric combination layer: zinc-tin oxide, thicknesses of layers are 22nm;
The second upper strata dielectric combination layer: silicon nitride, thicknesses of layers are 10nm.
The complete processing of above-mentioned rete is:
All zinc-tin oxide series of strata adopt intermediate frequency power supplies utmost point sputtering sedimentation in argon oxygen atmosphere of turning out cloudy of putting english, and power is 30kw-100kw, and the intermediate frequency power supply frequency is 30-50kHz;
All oxidation nickel chromium triangle series of strata sputter nichrome in argon oxygen atmosphere, power is 2-8kw;
Silicon nitride (Si
3N
4) series of strata adopt the intermediate frequency power supply utmost point sputtering sedimentation in argon nitrogen atmosphere of turning out cloudy of putting english, power is 30kw-100kw, the intermediate frequency power supply frequency is 30-50kHz;
Silver layer: planar cathode or rotating cathode, direct current or direct current add pulsed magnetron sputtering, deposit in argon atmosphere, and power is 2-8kw.
The characteristics of three-silver low radiation film glass provided by the present invention and production technique thereof are:
Traditional be to increase silver layer and dielectric layer combination layer in the low emissivity glass of infrared external reflection rete with Ag, make silver thickness disperse and block by the carrying of dielectric layer combination layer, can increase silver thickness and effectively improve the selection coefficient, can not reduce the adjustment space of transmitance and the outer light color of influence, obtain good overall target.
2. solve from two aspects that products transmitance thickening Ag layer process reduces and outer light presents the problem of interference color, the one, rete designs, and allows the film material on Ag layer both sides that silver layer is had the ability of better blocking, and the thicknesses of layers on Ag layer both sides is certain proportion; The 2nd, coating process makes the blocking layer on Ag layer and both sides thinner finer and close.
3. basic unit's dielectric combination layer and interlayer dielectric combination layer are antireflection film layer, play a part to connect glass and functional layer, require between rete and the glass adhesiveproperties good, and alleviate the internal stress of whole low-radiation film.The upper strata dielectric combination layer directly affects the scratch resistance of product, wear-resisting and corrosion resistance.The specific refractory power of these two combination layers will have preferably coupling, just can make the reflectivity of product and transmitance reach ideal value, and these two combination layers adopt the utmost point sputter of turning out cloudy of putting english of the intermediate frequency power supply of frequency 30-50kHz, and intermediate frequency power supply has arc extinction performance preferably simultaneously.
The above embodiment has only expressed several embodiment of the present invention, and it describes comparatively concrete and detailed, but can not therefore be interpreted as the restriction to claim of the present invention.Should be pointed out that for the person of ordinary skill of the art without departing from the inventive concept of the premise, can also make some distortion and improvement, these all belong to protection scope of the present invention.Therefore, the protection domain of patent of the present invention should be as the criterion with claims.
Claims (9)
1. three-silver low radiation film glass, it is characterized in that the film layer structure of this glass is: a glass/basic unit's dielectric combination layer/Ag layer/first blocking layer/first interlayer dielectric combination layer/the 2nd Ag layer/second blocking layer/second interlayer dielectric combination layer/the 3rd Ag layer/the 3rd blocking layer/first upper strata dielectric combination layer/second upper strata dielectric combination layer; Wherein said basic unit dielectric combination layer, the first interlayer dielectric combination layer, the second interlayer dielectric combination layer, the first upper strata dielectric combination layer, the second upper strata dielectric combination layer are to be selected from metal or nonmetallic oxide compound or nitride TiO
2, ZnSnO
x, ZnO, SiO
2, Ta
2O
5, BiO
2, Al
2O
3, ZnAl
2O
4, Nb
2O
5, Si
3N
4, at least a among the AZO.
2. three-silver low radiation film glass according to claim 1 is characterized in that, described basic unit dielectric combination layer thickness is 10～30nm.
3. three-silver low radiation film glass according to claim 1 is characterized in that, the thickness of the described first interlayer dielectric combination layer is 38～90nm; The thickness of the described second interlayer dielectric combination layer is 30～110nm.
4. three-silver low radiation film glass according to claim 1 is characterized in that, the thickness of the described first upper strata dielectric combination layer is 10～35nm; The thickness of the described second upper strata dielectric combination layer is 10～30nm.
5. three-silver low radiation film glass according to claim 1 is characterized in that, the thickness of a described Ag layer, the 2nd Ag layer, the 3rd Ag layer is 8～35nm.
6. three-silver low radiation film glass according to claim 1 is characterized in that, the material on described first blocking layer, second blocking layer, the 3rd blocking layer is oxidation nickel chromium triangle or nitrogenize nickel chromium triangle, bed thickness 1～10nm.
7. the production technique of any described three-silver low radiation film glass of claim 1-6 may further comprise the steps:
(1) parent glass cleaning-drying, and place the vacuum sputtering district;
(2) dual rotary negative electrode, intermediate frequency reaction magnetocontrol sputtering deposition basic unit dielectric combination layer;
(3) planar cathode or rotating cathode, direct current or direct current add pulsed magnetron sputtering and deposit an Ag layer;
(4) planar cathode or rotating cathode, direct current or direct current add pulsed magnetron sputtering and deposit first blocking layer;
(5) dual rotary negative electrode, intermediate frequency reaction magnetocontrol sputtering deposit the first interlayer dielectric combination layer;
(6) planar cathode or rotating cathode, direct current or direct current add pulsed magnetron sputtering and deposit the 2nd Ag layer;
(7) planar cathode or rotating cathode, direct current or direct current add pulsed magnetron sputtering and deposit second blocking layer;
(8) dual rotary negative electrode, intermediate frequency reaction magnetocontrol sputtering deposit the second interlayer dielectric combination layer;
(9) planar cathode or rotating cathode, direct current or direct current add pulsed magnetron sputtering and deposit the 3rd Ag layer;
(10) planar cathode or rotating cathode, direct current or direct current add pulsed magnetron sputtering and deposit the 3rd blocking layer;
(11) dual rotary negative electrode, intermediate frequency reaction magnetocontrol sputtering deposit first, second upper strata dielectric combination layer respectively.
8. the production technique of three-silver low radiation film glass according to claim 7 is characterized in that, described dual rotary negative electrode, intermediate frequency reaction magnetocontrol sputtering are to carry out in argon nitrogen or argon oxygen atmosphere, power 30kw-100kw, and the intermediate frequency power supply frequency is 30-50kHz.
9. the production technique of three-silver low radiation film glass according to claim 7 is characterized in that, it is to carry out power 2-8kw in argon oxygen atmosphere that described planar cathode or rotating cathode, direct current or direct current add pulsed magnetron sputtering.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009101058511A CN101497501B (en) | 2009-03-06 | 2009-03-06 | Three-silver low radiation film glass |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009101058511A CN101497501B (en) | 2009-03-06 | 2009-03-06 | Three-silver low radiation film glass |
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| Publication Number | Publication Date |
|---|---|
| CN101497501A CN101497501A (en) | 2009-08-05 |
| CN101497501B true CN101497501B (en) | 2011-08-17 |
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ID=40944800
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2009
- 2009-03-06 CN CN2009101058511A patent/CN101497501B/en not_active Ceased
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