CN101471307B - 半导体封装体及其制造方法 - Google Patents

半导体封装体及其制造方法 Download PDF

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CN101471307B
CN101471307B CN2007103008537A CN200710300853A CN101471307B CN 101471307 B CN101471307 B CN 101471307B CN 2007103008537 A CN2007103008537 A CN 2007103008537A CN 200710300853 A CN200710300853 A CN 200710300853A CN 101471307 B CN101471307 B CN 101471307B
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CN101471307A (zh
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杜茂华
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Samsung Semiconductor China R&D Co Ltd
Samsung Electronics Co Ltd
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    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
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    • H01L2224/161—Disposition
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Abstract

本发明公开了一种半导体封装体及其制造方法。该半导体封装体包括：基板；芯片，位于基板上方；模封树脂，填充在芯片周围，用于保护芯片并且将芯片与外界隔离；焊球，位于基板下方，用于电连接到外部电路；保护膜，涂敷在模封树脂的外表面上。

Description

半导体封装体及其制造方法
技术领域
本发明涉及一种半导体封装体及其制造方法，更具体地讲，本发明涉及一种提高了密封性和可靠性的半导体封装体及其制造方法。
背景技术
随着半导体封装技术的发展，对半导体封装的可靠性提出了更高的要求。图1是示出传统技术的半导体封装体的示意图。参照图1，传统技术的半导体封装体1包括：基板104；芯片101，位于基板104上方；金线106，将芯片101电连接到基板104；模封树脂102，填充在芯片101和金线106的周围，用于保护芯片101和金线106并且将芯片101和金线106与外界隔离；贴片胶103，设置在芯片101和基板104之间，用于固定芯片101；焊球105，位于基板104下方，用于将基板104电连接到外部电路。
半导体封装体在运输和保存的过程中，会吸收空气中的水分。而在将半导体封装体组装到印刷电路板(PCB)上之后，半导体封装体需要经历高温回流，为了使最终产品满足无铅化的需求，通常的回流温度为260℃。然而，在该温度下，半导体封装体内的水汽会迅速膨胀，而导致在半导体封装体1内会产生裂纹10g，如图2中所示。结果，这种半导体封装体不能满足可靠性的要求。
因此，需要一种提高了可靠性的半导体封装体。
发明内容
本发明的目的在于解决现有技术中存在的上述问题，提供一种密封性好并且可靠性高的半导体封装体及其制造方法。
根据本发明的半导体封装体通过在半导体封装体的外表面上设置保护膜来提高半导体封装体的密封性能，从而防止半导体封装体在运输和保存过程中吸收水分，于是防止了在半导体封装体内部产生裂纹，提高了半导体封装体的可靠性。
为了实现上述目的，本发明提供了这样一种半导体封装体，所述半导体封装体包括：基板；芯片，所述芯片位于基板上方；模封树脂，所述模封树脂填充在芯片周围，用于保护芯片；焊球，所述焊球位于基板下方，用于电连接到外部电路；保护膜，所述保护膜涂敷在模封树脂的外表面上。
优选地，所述保护膜由防水性好并且延展性优良的材料制成。更加优选地，所述保护膜由聚对二甲苯制成。
优选地，所述保护膜通过真空气相沉积形成在模封树脂的上表面和侧壁上，并且所述保护膜的厚度为3微米至15微米。
另外，在所述半导体封装体为引线键合型半导体封装体的情况下，所述半导体封装体还包括：金线，所述金线用于将芯片电连接到基板，并且所述模封树脂将金线与外界隔离；贴片胶，所述贴片胶设置在芯片和基板之间，用于固定芯片。
在所述半导体封装体为倒装贴片型半导体封装体的情况下，所述半导体封装体还包括：凸点，所述凸点设置在芯片和基板之间，用于将芯片电连接到基板；底充胶层，所述底充胶层填充在芯片和基板之间，用于保护凸点。
根据本发明的半导体封装体的制造方法通过在半导体封装体的外表面上设置保护膜来提高半导体封装体的密封性能，从而防止半导体封装体在运输和保存过程中吸收水分，于是防止了在半导体封装体内部产生裂纹，提高了半导体封装体的可靠性。
为了实现上述目的，本发明提供了这样一种半导体封装体的制造方法，所述制造方法包括以下步骤：制备基板；将芯片设置在基板上方；将模封树脂填充在芯片周围，用于保护芯片；在基板下方设置焊球，所述焊球用于电连接到外部电路；在模封树脂的外表面上涂敷保护膜。
根据本发明的半导体封装体的制造方法，在模封树脂的外表面上涂敷保护膜的步骤包括以下步骤：在基板的下表面上涂敷保护胶并且将保护胶固化；在模封树脂的外表面上沉积保护膜；去除保护胶。
附图说明
图1是示出传统技术的半导体封装体的示意图；
图2是示出传统技术中存在的缺陷的示意图；
图3是根据本发明第一示例性实施例的半导体封装体的示意图；
图4至图6是根据本发明第一示例性实施例的半导体封装体的制造方法的示意图；
图7是根据本发明第二示例性实施例的半导体封装体的示意图。
在附图中，相同的标号将用来表示相同或相似的元件。
具体实施方式
在下文中，将参照附图对本发明的示例性实施例进行详细的描述。
第一示例性实施例
参照图3，根据本发明第一示例性实施例的引线键合型半导体封装体10包括：基板104；芯片101，位于基板104上方；金线106，将芯片101电连接到基板104；模封树脂102，填充在芯片101和金线106的周围，用于保护芯片101和金线106并且将芯片101和金线106与外界隔离；贴片胶103，设置在芯片101和基板104之间，用于固定芯片101；焊球105，位于基板104下方，用于将基板104电连接到外部电路；保护膜107，涂敷在模封树脂102的外表面上。
优选地，保护膜107涂敷在模封树脂102的上表面和侧壁上。保护膜107由防水性能好并且延展性优良的材料制成。优选地，保护膜107由聚对二甲苯(parylene)制成。优选地，保护膜107的厚度在3微米至15微米的范围内。如果保护膜107的厚度小于3微米，则难以满足密封防水的要求；如果保护膜107的厚度大于15微米，则会增加半导体封装体的总体厚度，从而对半导体封装体小型化不利。
下面将参照图4至图6来详细描述根据本发明第一示例性实施例的半导体封装体的制造方法。根据本发明第一示例性实施例的半导体封装体10的制造方法包括以下步骤：制备基板104；在基板104上方涂敷贴片胶103；将芯片101放置在基板104上的贴片胶103上；形成将芯片101电连接到基板104的金线106；将模封树脂102填充在芯片101和金线106周围，用于保护芯片101和金线106并且将芯片101和金线106与外界隔离；在基板104下方设置焊球105，焊球105用于将基板104电连接到外部电路；在模封树脂102的外表面上涂敷保护膜107。
在模封树脂102的外表面上涂敷保护膜107的工艺包括以下步骤：参照图4，在基板104的下表面上涂敷保护胶109，并将保护胶109固化，以防止在后续形成保护膜107的过程中在焊球105的表面上形成保护膜107；参照图5，在保护胶109固化之后，通过气相沉积工艺在半导体封装体10的上表面和侧面上沉积保护膜107，优选地，保护膜107由聚对二甲苯形成，并且保护膜的厚度在3微米至15微米的范围内；参照图6，在形成保护膜107之后，将保护胶109剥离，从而形成最终的半导体封装体10。
第二示例性实施例
下面将参照图7来描述根据本发明第二示例性实施例的倒装贴片型半导体封装体100。参照图7，根据本发明第二示例性实施例的半导体封装体100包括：基板104；芯片101，位于基板104上方；凸点111，设置在芯片101和基板104之间，用于将芯片101电连接到基板104；底充胶层112，填充在芯片101和基板104之间，用于保护凸点111；模封树脂102，填充在芯片101的周围，用于保护芯片101并且将芯片101与外界隔离；焊球105，位于基板104下方，用于将基板104电连接到外部电路；保护膜107，涂敷在模封树脂102的外表面上。
优选地，保护膜107涂敷在模封树脂102的上表面和侧壁上。保护膜107由防水性能好并且延展性优良的材料制成。优选地，保护膜107由聚对二甲苯制成。优选地，保护膜107的厚度在3微米至15微米的范围内。如果保护膜107的厚度小于3微米，则难以满足密封防水的要求；如果保护膜107的厚度大于15微米，则会增加半导体封装体的总体厚度，从而对半导体封装体小型化不利。
下面将描述根据本发明第二示例性实施例的半导体封装体的制造方法。根据本发明第二示例性实施例的半导体封装体100的制造方法包括以下步骤：制备基板104；将预先放置有凸点111的芯片101放置在基板104上并在芯片101下填充底充胶112，或者在基板104上首先涂敷底充胶112，然后将预先放置有凸点111的芯片101放置在底充胶112上；将模封树脂102填充在芯片101周围，保护芯片101并且将芯片101与外界隔离；在基板104下方设置焊球105，焊球105用于将基板104电连接到外部电路；在模封树脂102的外表面上涂敷保护膜107。
在模封树脂102的外表面上涂敷保护膜107的工艺包括以下步骤：在基板104的下表面上涂敷保护胶109，并将保护胶109固化，以防止在后续形成保护膜107的过程中在焊球105的表面上形成保护膜107；在保护胶109固化之后，通过气相沉积工艺在半导体封装体100的上表面和侧面上沉积保护膜107，优选地，保护膜107由聚对二甲苯形成，并且保护膜的厚度在3微米至15微米的范围内；在形成保护膜107之后，将保护胶109剥离，从而形成最终的半导体封装体100。
表1示出了聚对二甲苯和环氧树脂的各种性能参数。
参照表1，可以看出聚对二甲苯与环氧树脂相比具有以下优点：变形小、抗拉强度高、延展性好、防水性好、常温下的膨胀率低以及透气性差等。因此，根据本发明示例性实施例的半导体封装体与现有技术的半导体封装体相比，由于聚对二甲苯具有如上所述的各种优点，所以根据本发明示例性实施例的具有由聚对二甲苯形成的保护膜的半导体封装体提高了密封性能，减少了在半导体封装体的运输和保存过程中渗入的水汽，从而防止由于水汽膨胀而导致的半导体封装体失效，提高了半导体封装体的可靠性。
表1
杨式模量MPa 抗拉强度MPa 断裂延伸％ 吸水性％(24hr) 熔点℃ 线膨胀系数25℃(10-5/℃) 水汽渗透37℃(90％RHg.mil/100in2.d)
聚对二甲苯 3200 70 200 ＜0.1 290 3.5 0.21
环氧树脂 2400 28～91 3～6 0.08～0.15 固化 4.5～6.5 6.6
根据本发明示例性实施例的封装体及其制造方法除了可以应用到如上所述的引线键合型和倒装贴片型半导体封装体之外，还可以应用到其它各种半导体封装体，用来提高半导体封装体的密封性能，从而提高半导体封装体的可靠性。
尽管已经参照本发明的特定示例性实施例描述了本发明，但是本领域技术人员应该理解，在不脱离由权利要求及其等同物限定的本发明精神或范围的情况下，可以对本发明进行各种修改和变化。

Claims (2)

1.一种半导体封装体的制造方法，其特征在于包括以下步骤：
将芯片设置在基板上方；
将模封树脂填充在所述芯片周围，以用于保护该芯片；
所述基板下方设置焊球，该焊球用于电连接到外部电路；
在所述模封树脂的外表面涂敷保护膜，
其中，所述涂敷保护膜的步骤包括：所述基板的下表面上涂敷保护胶，并且将保护胶固化；所述模封树脂的外表面沉积保护膜；去除保护胶，
其中，所述的保护膜由防水性好、延展性优良的材料制成。
2.根据权利要求1所述的制造方法，其特征在于所述保护膜由聚对二甲苯制成。
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US8747636B2 (en) * 2011-03-11 2014-06-10 Life Safety Distribution Ag Low water vapour transfer coating of thermoplastic moulded oxygen gas sensors
CN102832139B (zh) * 2012-08-10 2015-05-06 华为技术有限公司 四侧无引脚扁平封装体的封装方法及封装体
CN108281398B (zh) * 2013-08-20 2021-10-08 日月光半导体制造股份有限公司 半导体封装件及其制造方法
CN103730438A (zh) * 2013-11-26 2014-04-16 三星半导体(中国)研究开发有限公司 芯片封装件及其制造方法
CN103928409B (zh) * 2014-03-17 2017-01-04 江苏省宜兴电子器件总厂 一种集成电路倒扣焊气密性封装结构
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