CN101464474B - Semiconductor measuring probe bench with rotatable probe card - Google Patents

Semiconductor measuring probe bench with rotatable probe card Download PDF

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Publication number
CN101464474B
CN101464474B CN2007103022445A CN200710302244A CN101464474B CN 101464474 B CN101464474 B CN 101464474B CN 2007103022445 A CN2007103022445 A CN 2007103022445A CN 200710302244 A CN200710302244 A CN 200710302244A CN 101464474 B CN101464474 B CN 101464474B
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China
Prior art keywords
probe
whirligig
wafer
brilliant
mentioned
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Expired - Fee Related
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CN2007103022445A
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Chinese (zh)
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CN101464474A (en
Inventor
宋丰
王政烈
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Hejian Technology Suzhou Co Ltd
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Hejian Technology Suzhou Co Ltd
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Priority to CN2007103022445A priority Critical patent/CN101464474B/en
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Abstract

The invention provides a semiconductor measurement probe station with a rotatable probe card, which at least comprises a probe station main-body, an orbit and a wafer bearing disc; the orbit is positioned under the probe station main-body, and used for bearing and moving the wafer bearing disc; and the wafer bearing disc is positioned on the orbit and is used for holding a wafer, wherein, a swiveling mechanism positioned above the wafer bearing disc and used for installing the probe card is also included. The semiconductor measurement probe station adopts the relative movement conception, installs a traditional immobilized probe card to a rotating device, increases the rotary measuring accuracy greatly, and cannot waste more time.

Description

A kind of semiconductor measuring probe bench of rotatable probe card
Technical field
The present invention relates to a kind of semiconductor measuring probe bench, particularly a kind of semiconductor measuring probe bench of rotatable probe card.
Background technology
In semiconductor fabrication process, the component parameters measurement is an important monitoring step, reflects the problem on element characteristic and the production line through the electrical parameter of measuring elements such as resistance in the feeler switch on the wafer, electric capacity, transistor.During measurement, crystal chip bearing carrying on the brilliant dish in semiconductor measuring probe bench, with probe card after touch, measuring-signal is added on the feeler switch through the probe on the probe.The structure of traditional probe station is as shown in Figure 1, comprises probe station 1, horizontal rail 2, and vertical track 3, last lower railway 4 carries brilliant dish 5 and probe 6.As shown in Figure 2, because feeler switch 9 has along level and two kinds of placement directions of vertical direction, when direction of measurement need be changed usually; The main dual mode that adopts is surveyed: mode one carry rotatable 90 degree of brilliant dish 5 itself, but shortcoming is to carry brilliant dish 5 rotations to cause bearing accuracy to reduce; Suppose that carrying brilliant rim horizontal rail 2 kinematic errors is A, carrying vertical track 3 kinematic errors in brilliant rim is B, and lower railway 4 kinematic errors are C on year brilliant rim; Carrying brilliant dish 5 error that self rotatablely moves is D, and the total error of then carrying the relative probe motion of brilliant dish reaches A*B*C*D, along with the manufacture of semiconductor progress; Feeler switch 9 is more and more tiny; The precision of measurement requirement is increasingly high, measures the error that produces and will strengthen, and accuracy of measurement can reduce; Mode two is transferred to (not shown) on the extraneous rotary machine with wafer from carrying brilliant dish 5, moves back to after turning 90 degrees and carries brilliant dish 5, and the total error of carrying the relative probe motion of brilliant dish is A *B *C need by extraneous machine but shortcoming is this mode, and wafer shifts back and forth and will expend the more time.
Summary of the invention
The objective of the invention is to propose a kind of novel probe station that can address the above problem, be used for surveying easily the performance of wafer, reduce error simultaneously, when keeping less test error, quick measurement is provided.
In view of above-mentioned, the present invention proposes a kind of semiconductor measuring probe bench of rotatable probe card, comprise at least:
The probe station main body,
Be positioned at the track of probe station main body below, be used for carrying and move and carry brilliant dish;
Be positioned at the brilliant dish that carries on the above-mentioned track, be used to place wafer;
Wherein, comprise that also being positioned at a year crystalline substance coils the whirligig that is used to install probe of top.
As preferably, it is inboard that above-mentioned whirligig is placed in the upper surface of probe station, and the probe that is installed on the whirligig is relative with the brilliant dish of carrying of its below.
As preferably, above-mentioned track comprises horizontal rail, vertically track and last lower railway, and above-mentioned three tracks intersect at a point, and brilliant coiling placed on the lower railway in above-mentioned year.
The present invention has adopted the idea of relative motion, and the probe that conventional fixed is motionless places on the rotatable device, because the less and rapid speed of probe rotation back positioning error, so can significantly improve the wheel measuring precision, and can not expend the more time.Along with the manufacture of semiconductor progress, the feeler switch quantity that level and vertical direction are placed will get more and more, and will be more and more tiny, and the present invention provides a kind of solution of quick measurement when keeping less test error.
Below in conjunction with accompanying drawing, specific embodiments of the invention is described in further detail.For the person of ordinary skill in the field, from detailed description of the invention, above-mentioned and other purposes of the present invention, feature and advantage will be obvious.
Description of drawings
Fig. 1 is a probe station structural representation of the prior art.
Fig. 2 is the structural representation of wafer and feeler switch thereof.
Fig. 3 is the probe station structural representation of the present invention's one preferred embodiment.
The implication of each mark is among the figure: 1, probe station, 2, horizontal rail, 3, vertical track, 4, go up lower railway, 5, carry brilliant dish, 6, probe, 7, whirligig.
Embodiment
Below in conjunction with accompanying drawing and specific embodiment the semiconductor measuring probe bench of of the present invention kind of rotatable probe card is done further to specify.
In the semi-conductive manufacture process, the parameter measurement of element is a very important monitoring step, through the electrical parameter of elements such as the resistance in the feeler switch 9 of measuring wafer 8, electric capacity, transistor, and the problem on reflection element characteristic and the production line.
The present invention improves traditional approach, has adopted the idea of relative motion, do not rotate to carry brilliant dish 5, but rotating probe card 6 comes wafer is measured.At first; On the plane, main body top of probe station 1 a controllable whirligig 7 is set, the crystalline substance that carries of feasible probe that is mounted thereon and below coils relatively, and this whirligig 7 is by the external control device (not shown) control of connection; This whirligig 7 also can be placed on other suitable devices; For example on the shelf on the casing top of probe station 1, as long as can make stationary probe card 6 and rotation as required, then above-mentioned whirligig can be installed with arbitrary form.In the present embodiment, whirligig 7 is circular, and it also can be the shape of any appropriate.
Comprise the track that is positioned at probe station main body below in the main body of probe station 1, be used for carrying and carry brilliant dish, in this embodiment; Comprise horizontal rail 2, vertical track 3, last lower railway 4; Wherein carry brilliant dish 5 and be positioned at the top of lower railway 4, can along level, vertically and direction up and down move;
In the embodiments of the invention, the parameter testing process does, at first; Wafer 8 is placed the brilliant dish 5 of carrying of probe station 1, and wherein, carrying brilliant dish 5 can be along horizontal rail 2 move left and right; Can move forward and backward along vertical track 3; Can move up and down along last lower railway 4, so that when contacting, measuring-signal is added on the feeler switch 9 from probe 6 with the probe 6 that is fixed in probe station 1 top.Feeler switch 9 is generally level and vertical two kinds of directions, and it can certainly be other direction, does not receive the restriction of present embodiment.
Then, probe 6 is fixed on the above-mentioned whirligig 7, whirligig 7 can drive probe and rotate as required; During detection, wafer 8 is aimed at probe 6, carry out level, vertically, the moving of above-below direction; The feeler switch 9 of testing level direction at first, with the feeler switch 9 of probe alignment horizontal direction, probe in the probe 6 and the feeler switch of horizontal direction 9 are in contact with one another; Measuring-signal is added on the feeler switch 9 of horizontal direction, surveys each parameter, because feeler switch 9 is level and vertical direction; When therefore needing the feeler switch 9 of contact vertical direction, rotate probe 6, need to rotate probe; Drive probe 6 by whirligig 7 and be rotated, then survey.
The advantage of probe station structure of the present invention is: the less and rapid speed of probe 6 rotation back positioning errors.Suppose that probe 6 rotation errors are E, the total error of then carrying brilliant dish 5 relative probe 6 motions is A*B*C+E, and first kind of mode less than in the background technology is slightly larger than the second way.But the contrast second way, the present invention does not need to shift wafer back and forth, so need not expend the more time.So advantage of the present invention is obvious.
The above is merely preferred embodiment of the present invention, is not to be used for limiting practical range of the present invention; If do not break away from the spirit and scope of the present invention, the present invention is made amendment or is equal to replacement, all should be encompassed in the middle of the protection domain of claim of the present invention.

Claims (1)

1. the method that the semiconductor measuring probe bench that uses rotatable probe card is measured is characterized in that the semiconductor measuring probe bench of said rotatable probe card comprises: the probe station main body; Be positioned at the track of probe station main body below, be used for carrying and move and carry brilliant dish; Be positioned at the brilliant dish that carries on the above-mentioned track, be used to place wafer; Carry the brilliant whirligig that is used to install probe that coils the top with being positioned at;
Wherein, above-mentioned whirligig is placed in the upper surface inboard of probe station, and the probe that is installed on the whirligig is relative with year brilliant dish below it; Above-mentioned track comprises horizontal rail, vertical track and last lower railway, and above-mentioned three tracks intersect at a point, and brilliant dish placed on the lower railway in above-mentioned year;
Said method comprises:
Step 1): wafer is placed the brilliant dish of carrying of probe station;
Step 2): probe is fixed on the whirligig, and during detection, wafer is aimed at probe; Carry out level, vertically, the moving of above-below direction; The feeler switch of testing level direction at first, with the feeler switch of probe alignment horizontal direction, the probe in the probe and the feeler switch of horizontal direction are in contact with one another; Measuring-signal is added on the feeler switch of horizontal direction, surveys each parameter; When needing the probe of contact vertical direction, drive probe by whirligig and be rotated then and survey.
CN2007103022445A 2007-12-20 2007-12-20 Semiconductor measuring probe bench with rotatable probe card Expired - Fee Related CN101464474B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2007103022445A CN101464474B (en) 2007-12-20 2007-12-20 Semiconductor measuring probe bench with rotatable probe card

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Application Number Priority Date Filing Date Title
CN2007103022445A CN101464474B (en) 2007-12-20 2007-12-20 Semiconductor measuring probe bench with rotatable probe card

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CN101464474A CN101464474A (en) 2009-06-24
CN101464474B true CN101464474B (en) 2012-03-21

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Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102713651B (en) * 2010-12-07 2015-05-20 日本先锋公司 Semiconductor inspection device
CN102435787B (en) * 2011-09-15 2014-10-29 嘉兴景焱智能装备技术有限公司 Testing method and testing probe platform for image sensor chip
CN105277963B (en) * 2015-12-02 2018-01-02 成都理工大学 Three dimensions gamma ray radiator positioning searching apparatus and method
CN106019016B (en) * 2016-06-21 2019-04-19 苏州赛腾精密电子股份有限公司 A kind of rotating down pressing probe mechanism
CN107942227A (en) * 2017-11-15 2018-04-20 中电科技集团重庆声光电有限公司 Level chip aging clamp
CN107976622A (en) * 2017-12-25 2018-05-01 苏州睿艾迪汽车科技有限公司 FCT testers
CN108535622A (en) * 2018-04-28 2018-09-14 德淮半导体有限公司 Wafer tester, system and method
CN109065483A (en) * 2018-08-15 2018-12-21 德淮半导体有限公司 Detect board and detection method
CN112394274A (en) * 2019-08-13 2021-02-23 芯恩(青岛)集成电路有限公司 Wafer test equipment
CN112731096A (en) * 2020-12-21 2021-04-30 长江存储科技有限责任公司 Detection device, method for detecting wafer by using detection device and test system
US11747394B1 (en) 2022-03-09 2023-09-05 Nanya Technology Corporation Probe apparatus with a track
TWI825731B (en) * 2022-03-09 2023-12-11 南亞科技股份有限公司 Probe apparatus and wafer inspecton method

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1639577A (en) * 2002-03-22 2005-07-13 电子科学工业公司 Test probe alignment apparatus

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1639577A (en) * 2002-03-22 2005-07-13 电子科学工业公司 Test probe alignment apparatus

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