CN101464474A - Semiconductor measuring probe bench with rotatable probe card - Google Patents
Semiconductor measuring probe bench with rotatable probe card Download PDFInfo
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- CN101464474A CN101464474A CNA2007103022445A CN200710302244A CN101464474A CN 101464474 A CN101464474 A CN 101464474A CN A2007103022445 A CNA2007103022445 A CN A2007103022445A CN 200710302244 A CN200710302244 A CN 200710302244A CN 101464474 A CN101464474 A CN 101464474A
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- probe
- rotatable
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- probe card
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Abstract
The invention provides a semiconductor measurement probe station with a rotatable probe card, which at least comprises a probe station main-body, an orbit and a wafer bearing disc; the orbit is positioned under the probe station main-body, and used for bearing and moving the wafer bearing disc; and the wafer bearing disc is positioned on the orbit and is used for holding a wafer, wherein, a swiveling mechanism positioned above the wafer bearing disc and used for installing the probe card is also included. The semiconductor measurement probe station adopts the relative movement conception, installs a traditional immobilized probe card to a rotating device, increases the rotary measuring accuracy greatly, and cannot waste more time.
Description
Technical field
The present invention relates to a kind of semiconductor measuring probe bench, particularly a kind of semiconductor measuring probe bench of rotatable probe card.
Background technology
In semiconductor fabrication process, the component parameters measurement is an important monitoring step, reflects problem on element characteristic and the production line by the electrical parameter of measuring elements such as resistance in the feeler switch on the wafer, electric capacity, transistor.During measurement, crystal chip bearing carrying on the brilliant dish in semiconductor measuring probe bench, with probe card after touch, measuring-signal is added on the feeler switch by the probe on the probe.The structure of traditional probe station comprises probe station 1 as shown in Figure 1, horizontal rail 2, and vertical track 3, last lower railway 4 carries brilliant dish 5 and probe 6.As shown in Figure 2, because feeler switch 9 has usually along level and two kinds of placement directions of vertical direction, when direction of measurement need be changed, the main dual mode that adopts is surveyed: mode one, carry brilliant dish 5 rotatable 90 degree own, but shortcoming is to carry brilliant dish 5 rotations to cause bearing accuracy to reduce, suppose that carrying brilliant rim horizontal rail 2 kinematic errors is A, carrying vertical track 3 kinematic errors in brilliant rim is B, carry that lower railway 4 kinematic errors are C on the brilliant rim, carrying brilliant dish 5 error that self rotatablely moves is D, and the total error of then carrying the relative probe motion of brilliant dish reaches A*B*C*D, along with the manufacture of semiconductor progress, feeler switch 9 is more and more tiny, the precision of measurement requirement is more and more higher, measures the error that produces and will strengthen, and accuracy of measurement can reduce; Mode two, wafer is transferred to (not shown) on the extraneous rotary machine from carrying brilliant dish 5, moves back to after turning 90 degrees and carry brilliant dish 5, the total error of carrying the relative probe motion of brilliant dish is A*B*C, need by extraneous machine but shortcoming is this mode, and wafer shifts back and forth and will expend the more time.
Summary of the invention
The objective of the invention is to propose a kind of novel probe station that can address the above problem, be used for surveying easily the performance of wafer, reduce error simultaneously, when keeping less test error, provide quick measurement.
In view of above-mentioned, the present invention proposes a kind of semiconductor measuring probe bench of rotatable probe card, comprise at least:
The probe station main body,
Be positioned at the track of probe station main body below, be used for carrying and move carrying brilliant dish;
Be positioned at the brilliant dish that carries on the above-mentioned track, be used to place wafer;
Wherein, comprise that also being positioned at a year crystalline substance coils the whirligig that is used to install probe of top.
As preferably, above-mentioned whirligig is placed in the upper surface inboard of probe station, and the probe that is installed on the whirligig is relative with the brilliant dish of carrying of its below.
As preferably, above-mentioned track comprises horizontal rail, vertically track and last lower railway, and above-mentioned three tracks intersect at a point, and brilliant coiling placed on the lower railway in above-mentioned year.
The present invention has adopted the idea of relative motion, and the probe that conventional fixed is motionless places on the rotatable device, because probe rotation back positioning error is less and speed is very fast, thus can significantly improve the wheel measuring precision, and can not expend the more time.Along with the manufacture of semiconductor progress, the feeler switch quantity that level and vertical direction are placed will get more and more, and will be more and more tiny, and the present invention provides a kind of solution of quick measurement when keeping less test error.
Below in conjunction with accompanying drawing, the specific embodiment of the present invention is described in further detail.For the person of ordinary skill in the field, from detailed description of the invention, above-mentioned and other purposes of the present invention, feature and advantage will be apparent.
Description of drawings
Fig. 1 is a probe station structural representation of the prior art.
Fig. 2 is the structural representation of wafer and feeler switch thereof.
Fig. 3 is the probe station structural representation of a preferred embodiment of the present invention.
The implication of each mark is among the figure: 1, probe station, 2, horizontal rail, 3, vertical track, 4, go up lower railway, 5, carry brilliant dish, 6, probe, 7, whirligig.
Embodiment
Be described in further detail below in conjunction with the semiconductor measuring probe bench of the drawings and specific embodiments of the present invention kind of rotatable probe card.
In the semi-conductive manufacture process, the parameter measurement of element is a very important monitoring step, by the electrical parameter of elements such as the resistance in the feeler switch 9 of measuring wafer 8, electric capacity, transistor, and the problem on reflection element characteristic and the production line.
The present invention is improved traditional approach, has adopted the idea of relative motion, do not rotate to carry brilliant dish 5, but rotating probe card 6 comes wafer is measured.At first, on the plane, main body top of probe station 1 a controllable whirligig 7 is set, make that the probe that is mounted thereon is relative with the brilliant dish of carrying of below, this whirligig 7 is by the external control device (not shown) control that connects, this whirligig 7 also can be placed on other suitable devices, for example on the shelf on the casing top of probe station 1, as long as can make stationary probe card 6 and rotation as required, then above-mentioned whirligig can be installed with arbitrary form.In the present embodiment, whirligig 7 is circular, and it also can be the shape of any appropriate.
Comprise the track that is positioned at probe station main body below in the main body of probe station 1, be used for carrying and carry brilliant dish, in this embodiment, comprise horizontal rail 2, vertical track 3, last lower railway 4, wherein carry brilliant dish 5 and be positioned at the top of lower railway 4, can along level, vertically and direction up and down move;
In the embodiments of the invention, the parameter testing process is, at first, wafer 8 is placed the brilliant dish 5 of carrying of probe station 1, and wherein, carrying brilliant dish 5 can be along horizontal rail 2 move left and right, can move forward and backward along vertical track 3, can move up and down along last lower railway 4, so that when contacting, measuring-signal is added on the feeler switch 9 from probe 6 with the probe 6 that is fixed in probe station 1 top.Feeler switch 9 is generally level and vertical two kinds of directions, and it can certainly be other direction, is not subjected to the restriction of present embodiment.
Then, probe 6 is fixed on the above-mentioned whirligig 7, whirligig 7 can drive probe and rotate as required, during detection, wafer 8 is aimed at probe 6, carry out level, vertically, moving of above-below direction, the feeler switch 9 of testing level direction at first, feeler switch 9 with the probe alignment horizontal direction, probe in the probe 6 and the feeler switch of horizontal direction 9 are in contact with one another, and measuring-signal is added on the feeler switch 9 of horizontal direction, surveys each parameter, because feeler switch 9 is level and vertical direction, when therefore needing the feeler switch 9 of contact vertical direction, rotate probe 6, need to rotate probe, drive probe 6 by whirligig 7 and be rotated, then survey.
The advantage of probe station structure of the present invention is: probe 6 rotation back positioning errors are less and speed is very fast.Suppose that probe 6 rotation errors are E, the total error of then carrying brilliant dish 5 relative probe 6 motions is A*B*C+E, and first kind of mode less than in the background technology is slightly larger than the second way.But the contrast second way, the present invention does not need to shift wafer back and forth, so do not need to expend the more time.So advantage of the present invention is apparent.
The above is preferred embodiment of the present invention only, is not to be used for limiting practical range of the present invention; If do not break away from the spirit and scope of the present invention, the present invention is made amendment or is equal to replacement, all should be encompassed in the middle of the protection domain of claim of the present invention.
Claims (3)
1, a kind of semiconductor measuring probe bench of rotatable probe card comprises at least:
The probe station main body,
Be positioned at the track of probe station main body below, be used for carrying and move carrying brilliant dish;
Be positioned at the brilliant dish that carries on the above-mentioned track, be used to place wafer;
It is characterized in that also comprising being positioned at and carry the brilliant whirligig that is used to install probe that coils the top.
2, the semiconductor measuring probe bench of a kind of rotatable probe card according to claim 1 is characterized in that: above-mentioned whirligig is placed in the upper surface inboard of probe station, and the probe that is installed on the whirligig is relative with the brilliant dish of carrying of its below.
3, the semiconductor measuring probe bench of a kind of rotatable probe card according to claim 1 is characterized in that: above-mentioned track comprises horizontal rail, vertical track and last lower railway, and above-mentioned three tracks intersect at a point, and brilliant dish placed on the lower railway in above-mentioned year.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2007103022445A CN101464474B (en) | 2007-12-20 | 2007-12-20 | Semiconductor measuring probe bench with rotatable probe card |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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CN2007103022445A CN101464474B (en) | 2007-12-20 | 2007-12-20 | Semiconductor measuring probe bench with rotatable probe card |
Publications (2)
Publication Number | Publication Date |
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CN101464474A true CN101464474A (en) | 2009-06-24 |
CN101464474B CN101464474B (en) | 2012-03-21 |
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CN2007103022445A Expired - Fee Related CN101464474B (en) | 2007-12-20 | 2007-12-20 | Semiconductor measuring probe bench with rotatable probe card |
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Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102435787A (en) * | 2011-09-15 | 2012-05-02 | 嘉兴景焱智能装备技术有限公司 | Testing method and testing probe platform for image sensor chip |
CN102713651A (en) * | 2010-12-07 | 2012-10-03 | 日本先锋公司 | Semiconductor inspection device |
CN105277963A (en) * | 2015-12-02 | 2016-01-27 | 成都理工大学 | Positioning searching device and method for three-dimensional space gamma radiation source |
CN106019016A (en) * | 2016-06-21 | 2016-10-12 | 苏州赛腾精密电子股份有限公司 | Rotation downward-pressing probe mechanism |
CN107942227A (en) * | 2017-11-15 | 2018-04-20 | 中电科技集团重庆声光电有限公司 | Level chip aging clamp |
CN107976622A (en) * | 2017-12-25 | 2018-05-01 | 苏州睿艾迪汽车科技有限公司 | FCT testers |
CN108535622A (en) * | 2018-04-28 | 2018-09-14 | 德淮半导体有限公司 | Wafer tester, system and method |
CN109065483A (en) * | 2018-08-15 | 2018-12-21 | 德淮半导体有限公司 | Detect board and detection method |
CN112394274A (en) * | 2019-08-13 | 2021-02-23 | 芯恩(青岛)集成电路有限公司 | Wafer test equipment |
CN112731096A (en) * | 2020-12-21 | 2021-04-30 | 长江存储科技有限责任公司 | Detection device, method for detecting wafer by using detection device and test system |
US11747394B1 (en) | 2022-03-09 | 2023-09-05 | Nanya Technology Corporation | Probe apparatus with a track |
TWI825731B (en) * | 2022-03-09 | 2023-12-11 | 南亞科技股份有限公司 | Probe apparatus and wafer inspecton method |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2003083494A1 (en) * | 2002-03-22 | 2003-10-09 | Electro Scientific Industries, Inc. | Test probe alignment apparatus |
-
2007
- 2007-12-20 CN CN2007103022445A patent/CN101464474B/en not_active Expired - Fee Related
Cited By (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102713651A (en) * | 2010-12-07 | 2012-10-03 | 日本先锋公司 | Semiconductor inspection device |
CN102713651B (en) * | 2010-12-07 | 2015-05-20 | 日本先锋公司 | Semiconductor inspection device |
CN102435787B (en) * | 2011-09-15 | 2014-10-29 | 嘉兴景焱智能装备技术有限公司 | Testing method and testing probe platform for image sensor chip |
CN102435787A (en) * | 2011-09-15 | 2012-05-02 | 嘉兴景焱智能装备技术有限公司 | Testing method and testing probe platform for image sensor chip |
CN105277963A (en) * | 2015-12-02 | 2016-01-27 | 成都理工大学 | Positioning searching device and method for three-dimensional space gamma radiation source |
CN105277963B (en) * | 2015-12-02 | 2018-01-02 | 成都理工大学 | Three dimensions gamma ray radiator positioning searching apparatus and method |
CN106019016B (en) * | 2016-06-21 | 2019-04-19 | 苏州赛腾精密电子股份有限公司 | A kind of rotating down pressing probe mechanism |
CN106019016A (en) * | 2016-06-21 | 2016-10-12 | 苏州赛腾精密电子股份有限公司 | Rotation downward-pressing probe mechanism |
CN107942227A (en) * | 2017-11-15 | 2018-04-20 | 中电科技集团重庆声光电有限公司 | Level chip aging clamp |
CN107976622A (en) * | 2017-12-25 | 2018-05-01 | 苏州睿艾迪汽车科技有限公司 | FCT testers |
CN108535622A (en) * | 2018-04-28 | 2018-09-14 | 德淮半导体有限公司 | Wafer tester, system and method |
CN109065483A (en) * | 2018-08-15 | 2018-12-21 | 德淮半导体有限公司 | Detect board and detection method |
CN112394274A (en) * | 2019-08-13 | 2021-02-23 | 芯恩(青岛)集成电路有限公司 | Wafer test equipment |
CN112731096A (en) * | 2020-12-21 | 2021-04-30 | 长江存储科技有限责任公司 | Detection device, method for detecting wafer by using detection device and test system |
US11747394B1 (en) | 2022-03-09 | 2023-09-05 | Nanya Technology Corporation | Probe apparatus with a track |
TWI825731B (en) * | 2022-03-09 | 2023-12-11 | 南亞科技股份有限公司 | Probe apparatus and wafer inspecton method |
Also Published As
Publication number | Publication date |
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CN101464474B (en) | 2012-03-21 |
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