CN101458449B - 灰阶掩模坯料,灰阶掩模的制造方法和灰阶掩模及图案转写方法 - Google Patents

灰阶掩模坯料,灰阶掩模的制造方法和灰阶掩模及图案转写方法 Download PDF

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Publication number
CN101458449B
CN101458449B CN2008101868961A CN200810186896A CN101458449B CN 101458449 B CN101458449 B CN 101458449B CN 2008101868961 A CN2008101868961 A CN 2008101868961A CN 200810186896 A CN200810186896 A CN 200810186896A CN 101458449 B CN101458449 B CN 101458449B
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China
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semi
light
transparent film
gray
photomask
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CN2008101868961A
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Chinese (zh)
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CN101458449A (zh
Inventor
佐野道明
井村和久
三井胜
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Hoya Corp
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Hoya Corp
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/76—Patterning of masks by imaging
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H01L21/0276—Photolithographic processes using an anti-reflective coating
CN2008101868961A 2007-09-29 2008-09-27 灰阶掩模坯料,灰阶掩模的制造方法和灰阶掩模及图案转写方法 Active CN101458449B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007256926 2007-09-29
JP2007256926A JP4934236B2 (ja) 2007-09-29 2007-09-29 グレートーンマスクブランク、グレートーンマスクの製造方法及びグレートーンマスク、並びにパターン転写方法
JP2007-256926 2007-09-29

Publications (2)

Publication Number Publication Date
CN101458449A CN101458449A (zh) 2009-06-17
CN101458449B true CN101458449B (zh) 2013-03-13

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CN2008101868961A Active CN101458449B (zh) 2007-09-29 2008-09-27 灰阶掩模坯料,灰阶掩模的制造方法和灰阶掩模及图案转写方法

Country Status (4)

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JP (1) JP4934236B2 (ja)
KR (2) KR20090033315A (ja)
CN (1) CN101458449B (ja)
TW (1) TWI448816B (ja)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010044149A (ja) * 2008-08-11 2010-02-25 Hoya Corp 多階調フォトマスク、パターン転写方法及び多階調フォトマスクを用いた表示装置の製造方法
JP2011215197A (ja) * 2010-03-31 2011-10-27 Hoya Corp フォトマスク及びその製造方法
TWI463250B (zh) * 2012-07-18 2014-12-01 Unimicron Technology Corp 灰階光罩與其製作方法以及利用灰階光罩形成溝渠的方法
CN103412463A (zh) * 2013-08-27 2013-11-27 南通富士通微电子股份有限公司 掩膜版及其制造方法
CN108227368A (zh) 2018-01-17 2018-06-29 京东方科技集团股份有限公司 一种掩模板、显示基板以及显示装置
CN110783263B (zh) * 2019-08-26 2022-12-16 上海新微技术研发中心有限公司 半导体结构的形成方法
CN110544671A (zh) * 2019-08-26 2019-12-06 上海新微技术研发中心有限公司 半导体结构的形成方法
JP2023050611A (ja) * 2021-09-30 2023-04-11 株式会社エスケーエレクトロニクス フォトマスク及びフォトマスクの製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007010866A1 (ja) * 2005-07-15 2007-01-25 Ulvac Coating Corporation グレートーンマスク用ブランクス、及びそれを用いたグレートーンマスク及びその製造方法

Family Cites Families (14)

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Publication number Priority date Publication date Assignee Title
JPS63167354A (ja) * 1986-12-29 1988-07-11 Hoya Corp パタ−ン形成方法
JPH0644146B2 (ja) * 1987-03-03 1994-06-08 三菱電機株式会社 フオトマスク
JP3856197B2 (ja) * 2001-04-13 2006-12-13 ソニー株式会社 Ｏｐマスクの製作方法
JP3645882B2 (ja) * 2002-03-01 2005-05-11 Ｈｏｙａ株式会社 ハーフトーン型位相シフトマスクブランクの製造方法
JP4393290B2 (ja) * 2003-06-30 2010-01-06 Ｈｏｙａ株式会社 グレートーンマスクの製造方法及び薄膜トランジスタ基板の製造方法
JP4521694B2 (ja) * 2004-03-09 2010-08-11 Ｈｏｙａ株式会社 グレートーンマスク及び薄膜トランジスタの製造方法
KR101143005B1 (ko) * 2004-12-14 2012-05-08 삼성전자주식회사 마스크 및 이를 이용한 반도체 소자의 제조 방법 및 박막트랜지스터 표시판의 제조 방법
JP5196098B2 (ja) * 2005-09-21 2013-05-15 大日本印刷株式会社 階調をもつフォトマスクおよびその製造方法
JP4834203B2 (ja) * 2005-09-30 2011-12-14 Ｈｏｙａ株式会社 フォトマスクブランクの製造方法及びフォトマスクの製造方法
JP4726010B2 (ja) * 2005-11-16 2011-07-20 Ｈｏｙａ株式会社 マスクブランク及びフォトマスク
JP4516560B2 (ja) * 2005-12-26 2010-08-04 Ｈｏｙａ株式会社 マスクブランク及びフォトマスク
KR100812253B1 (ko) * 2006-01-20 2008-03-10 주식회사 에스앤에스텍 그레이톤 포토마스크의 제조방법, 그레이톤 포토마스크 및그레이톤 블랭크마스크
JP2007219038A (ja) * 2006-02-15 2007-08-30 Hoya Corp マスクブランク及びフォトマスク
JP4968709B2 (ja) * 2006-03-17 2012-07-04 Ｈｏｙａ株式会社 グレートーンマスクの製造方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007010866A1 (ja) * 2005-07-15 2007-01-25 Ulvac Coating Corporation グレートーンマスク用ブランクス、及びそれを用いたグレートーンマスク及びその製造方法

Also Published As

Publication number Publication date
CN101458449A (zh) 2009-06-17
JP2009086380A (ja) 2009-04-23
TW200925775A (en) 2009-06-16
KR20090033315A (ko) 2009-04-02
KR20100061435A (ko) 2010-06-07
JP4934236B2 (ja) 2012-05-16
TWI448816B (zh) 2014-08-11

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Address after: Japan Tokyo 160-8347 Shinjuku Shinjuku six chome 10 No. 1

Patentee after: HOYA Corporation

Address before: Tokyo, Japan, Japan

Patentee before: HOYA Corporation