CN101452950A - IGBT power device adopting silicon nitride (Si3N4) and phosphosilicate glass (PSG) composite thin-film isolation technique - Google Patents

IGBT power device adopting silicon nitride (Si3N4) and phosphosilicate glass (PSG) composite thin-film isolation technique Download PDF

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Publication number
CN101452950A
CN101452950A CNA200710114842XA CN200710114842A CN101452950A CN 101452950 A CN101452950 A CN 101452950A CN A200710114842X A CNA200710114842X A CN A200710114842XA CN 200710114842 A CN200710114842 A CN 200710114842A CN 101452950 A CN101452950 A CN 101452950A
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China
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layer
psg
si3n4
silicon nitride
power device
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CNA200710114842XA
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Chinese (zh)
Inventor
陈智勇
周兵
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KEDA SEMICONDUCTOR CO Ltd
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KEDA SEMICONDUCTOR CO Ltd
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Priority to CNA200710114842XA priority Critical patent/CN101452950A/en
Publication of CN101452950A publication Critical patent/CN101452950A/en
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Abstract

The invention provides an IGBT power device adopting silicon nitride (Si3N4) and phosphorus mixed silicon oxide(PSG) composite membrane isolation technique and a process for producing the same. The device comprises a bottom layer metal collector, a P plus zone, an N minus substrate layer, a P minus diffusion zone, an N plus zone, an SiO2 gate oxygen layer, a polysilicon gate layer, a gate and emitter isolation layer, a surface layer metal emitter and a passivation layer, wherein the gate zone and the emitter isolation layer are isolated by the composite membrane made of silicon nitride(Si3N4) and phosphorus mixed silicon oxide(PSG), the top layer of the composite membrane isolation layer is a PSG membrane with a thickness of between 700 and 1,000nm, and the bottom layer of the composite membrane isolation layer is an Si3N4 membrane with a thickness of between 30 and 100nm. The novel process has the advantages of improving thermal characteristics, having prominent stability, greatly improving operational reliability of the IGBT power device, meeting requirements on the environments of high temperature and big power, being fully compatible with the prior PSG process, having obvious characteristics of simple structure and convenient production and realizing extremely high production yield.

Description

A kind of employing silicon nitride (Si 3N 4) and IGBT power device and the manufacturing process thereof of mixing phosphor silicon oxide (PSG) laminated film isolation technology
Technical field:
The present invention relates to the semiconductor devices in the microelectronics technology, particularly a kind of employing silicon nitride (Si 3N 4) and mix the IGBT power device of the production of phosphor silicon oxide (PSG) laminated film isolation technology.
Background technology:
Existing IGBT power device is mainly by metal back layer, N+ substrate, silicon N-epitaxial loayer, P-district, P+ district, N+ district, thermal oxidation SiO 2Grid oxide layer, polycrystalline silicon grid layer, SiO 2Illuvium, phosphorosilicate glass PSG illuvium and metal surface are formed.Fill the post of by metal surface that source electrode, metal back layer are filled the post of drain electrode, polycrystalline silicon grid layer is filled the post of grid, phosphorosilicate glass PSG layer and LPCVD SiO 2The source gate spacer is filled the post of in layer combination, the source region by the P-district that is positioned at deep layer, in the middle of being positioned at the P+ district and the annular N+ district that is positioned at periphery, P+ district constitute.
PSG individual layer in the prior art, the functional reliability of IGBT power device is poor, and it is little to be fit to temperature range, product stable bad.
Summary of the invention:
The IGBT power device and the manufacturing process thereof that the object of the present invention is to provide a kind of employing silicon nitride (Si3N4) and mix phosphor silicon oxide (PSG) laminated film isolation technology.
The object of the present invention is achieved like this: a kind of employing silicon nitride (Si3N4) and IGBT power device and the manufacturing process thereof of mixing phosphor silicon oxide (PSG) laminated film isolation technology, comprise: underlying metal colelctor electrode, P+ district, the N-substrate layer, P-diffusion region, N+ district, SiO 2Grid oxide layer, polycrystalline silicon grid layer, grid and emitter stage separation layer, top layer metal emitting, and passivation layer, grid region and emitter stage separation layer are by silicon nitride (Si 3N 4) and mix the isolation of phosphor silicon oxide (PSG) composition laminated film, the top layer of laminated film separation layer is psg film, thickness is 700~1000nm; Bottom is Si 3N 4Film, thickness are 30~100nm.
Compared with prior art, advantage of the present invention is: Si 3N 4Film has good chemical stability and low-permeability performance.Si 3N 4With PSG individual layer in PSG laminated film isolation technology and the prior art, and SiO 2Layer is compared with PSG layer combination isolation technology, and new technology can improve hot property, has outstanding stability, can increase substantially the functional reliability of IGBT power device, is fit to the needs under high temperature, the high-power environment.In manufacture process and existing PSG technology compatible fully, have simple in structure, easily manufactured distinguishing feature, and can realize the high rate that manufactures a finished product.
Description of drawings:
A kind of employing silicon nitride of the present invention (Si 3N 4) and mix the structural representation of IGBT power device of the production of phosphor silicon oxide (PSG) laminated film isolation technology.
Embodiment:
Be described in detail embodiments of the invention below in conjunction with accompanying drawing.
Underlying metal collector electrode 7, P+ district 6, N-substrate layer 5, P-diffusion region 4, N+ district 3, SiO 2 Grid oxide layer 8, polycrystalline silicon grid layer 9, grid region and emitter separator 10, top layer metal emitting 2 and passivation layer 1.Grid region and emitter stage separation layer are by silicon nitride (Si 3N 4) and mix the isolation of phosphor silicon oxide (PSG) composition laminated film.The two-layer formation of laminated film separation layer reason, top layer is psg film 11, thickness is 700~1000nm; Bottom is Si 3N 4 Film 12, thickness are 30~100nm.

Claims (1)

  1. A kind of employing silicon nitride (Si3N4) and IGBT power device and the manufacturing process thereof of mixing phosphor silicon oxide (PSG) laminated film isolation technology comprise: underlying metal colelctor electrode, P+ district, N-substrate layer, P-diffusion region, N+ district, SiO 2Grid oxide layer, polycrystalline silicon grid layer, grid and emitter stage separation layer, top layer metal emitting, and passivation layer is characterized in that grid region and emitter stage separation layer are by silicon nitride (Si 3N 4) and mix the isolation of phosphor silicon oxide (PSG) composition laminated film, the top layer of laminated film separation layer is psg film, thickness is 700~1000nm; Bottom is Si 3N 4Film, thickness are 30~100nm.
CNA200710114842XA 2007-12-04 2007-12-04 IGBT power device adopting silicon nitride (Si3N4) and phosphosilicate glass (PSG) composite thin-film isolation technique Pending CN101452950A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CNA200710114842XA CN101452950A (en) 2007-12-04 2007-12-04 IGBT power device adopting silicon nitride (Si3N4) and phosphosilicate glass (PSG) composite thin-film isolation technique

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CNA200710114842XA CN101452950A (en) 2007-12-04 2007-12-04 IGBT power device adopting silicon nitride (Si3N4) and phosphosilicate glass (PSG) composite thin-film isolation technique

Publications (1)

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CN101452950A true CN101452950A (en) 2009-06-10

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102487050A (en) * 2010-12-03 2012-06-06 比亚迪股份有限公司 Power semiconductor device and method for manufacturing the same
CN104900685A (en) * 2014-03-07 2015-09-09 英飞凌科技股份有限公司 Semiconductor Device with a Passivation Layer and Method for Producing Thereof
CN106252244A (en) * 2016-09-22 2016-12-21 全球能源互联网研究院 A kind of terminal passivating method and semiconductor power device
CN106653601A (en) * 2016-11-14 2017-05-10 北京时代民芯科技有限公司 Manufacture method for twin pole device resisting low dosage rate irradiation

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102487050A (en) * 2010-12-03 2012-06-06 比亚迪股份有限公司 Power semiconductor device and method for manufacturing the same
CN102487050B (en) * 2010-12-03 2015-11-25 比亚迪股份有限公司 Power semiconductor and manufacture method thereof
CN104900685A (en) * 2014-03-07 2015-09-09 英飞凌科技股份有限公司 Semiconductor Device with a Passivation Layer and Method for Producing Thereof
US11158557B2 (en) 2014-03-07 2021-10-26 Infineon Technologies Ag Semiconductor device with a passivation layer and method for producing thereof
US11854926B2 (en) 2014-03-07 2023-12-26 Infineon Technologies Ag Semiconductor device with a passivation layer and method for producing thereof
CN106252244A (en) * 2016-09-22 2016-12-21 全球能源互联网研究院 A kind of terminal passivating method and semiconductor power device
CN106653601A (en) * 2016-11-14 2017-05-10 北京时代民芯科技有限公司 Manufacture method for twin pole device resisting low dosage rate irradiation
CN106653601B (en) * 2016-11-14 2019-10-25 北京时代民芯科技有限公司 A kind of bipolar device manufacturing method of anti-low dose rate irradiation

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Open date: 20090610