CN101452950A - IGBT power device adopting silicon nitride (Si3N4) and phosphosilicate glass (PSG) composite thin-film isolation technique - Google Patents
IGBT power device adopting silicon nitride (Si3N4) and phosphosilicate glass (PSG) composite thin-film isolation technique Download PDFInfo
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- CN101452950A CN101452950A CNA200710114842XA CN200710114842A CN101452950A CN 101452950 A CN101452950 A CN 101452950A CN A200710114842X A CNA200710114842X A CN A200710114842XA CN 200710114842 A CN200710114842 A CN 200710114842A CN 101452950 A CN101452950 A CN 101452950A
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- si3n4
- silicon nitride
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Abstract
The invention provides an IGBT power device adopting silicon nitride (Si3N4) and phosphorus mixed silicon oxide(PSG) composite membrane isolation technique and a process for producing the same. The device comprises a bottom layer metal collector, a P plus zone, an N minus substrate layer, a P minus diffusion zone, an N plus zone, an SiO2 gate oxygen layer, a polysilicon gate layer, a gate and emitter isolation layer, a surface layer metal emitter and a passivation layer, wherein the gate zone and the emitter isolation layer are isolated by the composite membrane made of silicon nitride(Si3N4) and phosphorus mixed silicon oxide(PSG), the top layer of the composite membrane isolation layer is a PSG membrane with a thickness of between 700 and 1,000nm, and the bottom layer of the composite membrane isolation layer is an Si3N4 membrane with a thickness of between 30 and 100nm. The novel process has the advantages of improving thermal characteristics, having prominent stability, greatly improving operational reliability of the IGBT power device, meeting requirements on the environments of high temperature and big power, being fully compatible with the prior PSG process, having obvious characteristics of simple structure and convenient production and realizing extremely high production yield.
Description
Technical field:
The present invention relates to the semiconductor devices in the microelectronics technology, particularly a kind of employing silicon nitride (Si
3N
4) and mix the IGBT power device of the production of phosphor silicon oxide (PSG) laminated film isolation technology.
Background technology:
Existing IGBT power device is mainly by metal back layer, N+ substrate, silicon N-epitaxial loayer, P-district, P+ district, N+ district, thermal oxidation SiO
2Grid oxide layer, polycrystalline silicon grid layer, SiO
2Illuvium, phosphorosilicate glass PSG illuvium and metal surface are formed.Fill the post of by metal surface that source electrode, metal back layer are filled the post of drain electrode, polycrystalline silicon grid layer is filled the post of grid, phosphorosilicate glass PSG layer and LPCVD SiO
2The source gate spacer is filled the post of in layer combination, the source region by the P-district that is positioned at deep layer, in the middle of being positioned at the P+ district and the annular N+ district that is positioned at periphery, P+ district constitute.
PSG individual layer in the prior art, the functional reliability of IGBT power device is poor, and it is little to be fit to temperature range, product stable bad.
Summary of the invention:
The IGBT power device and the manufacturing process thereof that the object of the present invention is to provide a kind of employing silicon nitride (Si3N4) and mix phosphor silicon oxide (PSG) laminated film isolation technology.
The object of the present invention is achieved like this: a kind of employing silicon nitride (Si3N4) and IGBT power device and the manufacturing process thereof of mixing phosphor silicon oxide (PSG) laminated film isolation technology, comprise: underlying metal colelctor electrode, P+ district, the N-substrate layer, P-diffusion region, N+ district, SiO
2Grid oxide layer, polycrystalline silicon grid layer, grid and emitter stage separation layer, top layer metal emitting, and passivation layer, grid region and emitter stage separation layer are by silicon nitride (Si
3N
4) and mix the isolation of phosphor silicon oxide (PSG) composition laminated film, the top layer of laminated film separation layer is psg film, thickness is 700～1000nm; Bottom is Si
3N
4Film, thickness are 30～100nm.
Compared with prior art, advantage of the present invention is: Si
3N
4Film has good chemical stability and low-permeability performance.Si
3N
4With PSG individual layer in PSG laminated film isolation technology and the prior art, and SiO
2Layer is compared with PSG layer combination isolation technology, and new technology can improve hot property, has outstanding stability, can increase substantially the functional reliability of IGBT power device, is fit to the needs under high temperature, the high-power environment.In manufacture process and existing PSG technology compatible fully, have simple in structure, easily manufactured distinguishing feature, and can realize the high rate that manufactures a finished product.
Description of drawings:
A kind of employing silicon nitride of the present invention (Si
3N
4) and mix the structural representation of IGBT power device of the production of phosphor silicon oxide (PSG) laminated film isolation technology.
Embodiment:
Be described in detail embodiments of the invention below in conjunction with accompanying drawing.
Underlying metal collector electrode 7, P+ district 6, N-substrate layer 5, P-diffusion region 4, N+ district 3, SiO
2 Grid oxide layer 8, polycrystalline silicon grid layer 9, grid region and emitter separator 10, top layer metal emitting 2 and passivation layer 1.Grid region and emitter stage separation layer are by silicon nitride (Si
3N
4) and mix the isolation of phosphor silicon oxide (PSG) composition laminated film.The two-layer formation of laminated film separation layer reason, top layer is psg film 11, thickness is 700～1000nm; Bottom is Si
3N
4 Film 12, thickness are 30～100nm.
Claims (1)
- A kind of employing silicon nitride (Si3N4) and IGBT power device and the manufacturing process thereof of mixing phosphor silicon oxide (PSG) laminated film isolation technology comprise: underlying metal colelctor electrode, P+ district, N-substrate layer, P-diffusion region, N+ district, SiO 2Grid oxide layer, polycrystalline silicon grid layer, grid and emitter stage separation layer, top layer metal emitting, and passivation layer is characterized in that grid region and emitter stage separation layer are by silicon nitride (Si 3N 4) and mix the isolation of phosphor silicon oxide (PSG) composition laminated film, the top layer of laminated film separation layer is psg film, thickness is 700～1000nm; Bottom is Si 3N 4Film, thickness are 30～100nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA200710114842XA CN101452950A (en) | 2007-12-04 | 2007-12-04 | IGBT power device adopting silicon nitride (Si3N4) and phosphosilicate glass (PSG) composite thin-film isolation technique |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA200710114842XA CN101452950A (en) | 2007-12-04 | 2007-12-04 | IGBT power device adopting silicon nitride (Si3N4) and phosphosilicate glass (PSG) composite thin-film isolation technique |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101452950A true CN101452950A (en) | 2009-06-10 |
Family
ID=40735074
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA200710114842XA Pending CN101452950A (en) | 2007-12-04 | 2007-12-04 | IGBT power device adopting silicon nitride (Si3N4) and phosphosilicate glass (PSG) composite thin-film isolation technique |
Country Status (1)
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|---|---|
| CN (1) | CN101452950A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102487050A (en) * | 2010-12-03 | 2012-06-06 | 比亚迪股份有限公司 | Power semiconductor device and method for manufacturing the same |
| CN104900685A (en) * | 2014-03-07 | 2015-09-09 | 英飞凌科技股份有限公司 | Semiconductor Device with a Passivation Layer and Method for Producing Thereof |
| CN106252244A (en) * | 2016-09-22 | 2016-12-21 | 全球能源互联网研究院 | A kind of terminal passivating method and semiconductor power device |
| CN106653601A (en) * | 2016-11-14 | 2017-05-10 | 北京时代民芯科技有限公司 | Manufacture method for twin pole device resisting low dosage rate irradiation |
-
2007
- 2007-12-04 CN CNA200710114842XA patent/CN101452950A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102487050A (en) * | 2010-12-03 | 2012-06-06 | 比亚迪股份有限公司 | Power semiconductor device and method for manufacturing the same |
| CN102487050B (en) * | 2010-12-03 | 2015-11-25 | 比亚迪股份有限公司 | Power semiconductor and manufacture method thereof |
| CN104900685A (en) * | 2014-03-07 | 2015-09-09 | 英飞凌科技股份有限公司 | Semiconductor Device with a Passivation Layer and Method for Producing Thereof |
| US11158557B2 (en) | 2014-03-07 | 2021-10-26 | Infineon Technologies Ag | Semiconductor device with a passivation layer and method for producing thereof |
| US11854926B2 (en) | 2014-03-07 | 2023-12-26 | Infineon Technologies Ag | Semiconductor device with a passivation layer and method for producing thereof |
| CN106252244A (en) * | 2016-09-22 | 2016-12-21 | 全球能源互联网研究院 | A kind of terminal passivating method and semiconductor power device |
| CN106653601A (en) * | 2016-11-14 | 2017-05-10 | 北京时代民芯科技有限公司 | Manufacture method for twin pole device resisting low dosage rate irradiation |
| CN106653601B (en) * | 2016-11-14 | 2019-10-25 | 北京时代民芯科技有限公司 | A kind of bipolar device manufacturing method of anti-low dose rate irradiation |
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Open date: 20090610 |