CN101452834B - 制造GaN衬底、外延晶片和半导体器件的方法以及外延晶片 - Google Patents

制造GaN衬底、外延晶片和半导体器件的方法以及外延晶片 Download PDF

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Publication number
CN101452834B
CN101452834B CN2008101689834A CN200810168983A CN101452834B CN 101452834 B CN101452834 B CN 101452834B CN 2008101689834 A CN2008101689834 A CN 2008101689834A CN 200810168983 A CN200810168983 A CN 200810168983A CN 101452834 B CN101452834 B CN 101452834B
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gan substrate
layer
thickness
epitaxial wafer
gan
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CN101452834A (zh
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中西文毅
三浦祥纪
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Sumitomo Electric Industries Ltd
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  • Recrystallisation Techniques (AREA)
CN2008101689834A 2007-10-05 2008-10-06 制造GaN衬底、外延晶片和半导体器件的方法以及外延晶片 Expired - Fee Related CN101452834B (zh)

Applications Claiming Priority (6)

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JP2007262444 2007-10-05
JP2007-262444 2007-10-05
JP2007262444 2007-10-05
JP2008179195A JP5181885B2 (ja) 2007-10-05 2008-07-09 ＧａＮ基板の製造方法、エピウエハの製造方法、半導体素子の製造方法およびエピウエハ
JP2008-179195 2008-07-09
JP2008179195 2008-07-09

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CN2011103935341A Division CN102437265A (zh) 2007-10-05 2008-10-06 外延晶片

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CN101452834A CN101452834A (zh) 2009-06-10
CN101452834B true CN101452834B (zh) 2012-01-11

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CN2011103935341A Pending CN102437265A (zh) 2007-10-05 2008-10-06 外延晶片

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JP (1) JP5181885B2 (ja)
KR (1) KR20090035451A (ja)
CN (2) CN101452834B (ja)
RU (1) RU2008139466A (ja)
TW (1) TW200936827A (ja)

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EP2524979B1 (en) 2010-01-15 2016-11-02 Mitsubishi Chemical Corporation Single-crystal substrate and process for produicng group iii element nitride crystal
JP2012009695A (ja) 2010-06-25 2012-01-12 Showa Denko Kk 半導体発光素子の製造方法、半導体発光素子、電子機器及び機械装置
KR20130081956A (ko) 2012-01-10 2013-07-18 삼성전자주식회사 질화물 반도체층 성장 방법

Citations (1)

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Publication number Priority date Publication date Assignee Title
CN101037807A (zh) * 2006-02-15 2007-09-19 住友电气工业株式会社 GaN晶体衬底及其制造方法以及制造半导体器件的方法

Family Cites Families (7)

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Publication number Priority date Publication date Assignee Title
JP4043087B2 (ja) * 1998-01-23 2008-02-06 日亜化学工業株式会社 窒化物半導体素子の製造方法及び窒化物半導体素子
JP3788041B2 (ja) * 1998-06-30 2006-06-21 住友電気工業株式会社 ＧａＮ単結晶基板の製造方法
JP4948720B2 (ja) * 2001-08-29 2012-06-06 シャープ株式会社 窒素化合物半導体積層物、発光素子、光ピックアップシステム、および窒素化合物半導体積層物の製造方法。
JP3951973B2 (ja) * 2003-06-27 2007-08-01 日亜化学工業株式会社 窒化物半導体素子
JP4333377B2 (ja) * 2004-01-28 2009-09-16 住友電気工業株式会社 ＧａＮ単結晶基板およびその製造方法ならびに発光デバイス
JP3888374B2 (ja) * 2004-03-17 2007-02-28 住友電気工業株式会社 ＧａＮ単結晶基板の製造方法
JP4525309B2 (ja) * 2004-11-19 2010-08-18 日立電線株式会社 Ｉｉｉ−ｖ族窒化物系半導体基板の評価方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101037807A (zh) * 2006-02-15 2007-09-19 住友电气工业株式会社 GaN晶体衬底及其制造方法以及制造半导体器件的方法

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
JP特开2005-64336A 2005.03.10
S.H.CHRISTIANSEN ET AL..Relaxation processes of AlGaN/GaN heterostructures grown onto single crystal GaN (0001)substrates.《3rd international conference on nitride semiconductors》.1999,第176卷(第1期),第285-290页. *

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CN102437265A (zh) 2012-05-02
RU2008139466A (ru) 2010-04-10
JP5181885B2 (ja) 2013-04-10
JP2009102217A (ja) 2009-05-14
TW200936827A (en) 2009-09-01
CN101452834A (zh) 2009-06-10
KR20090035451A (ko) 2009-04-09

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