KR20090035451A - ＧａＮ 기판의 제조 방법, 에피택셜 웨이퍼의 제조 방법, 반도체 소자의 제조 방법 및 에피택셜 웨이퍼 - Google Patents

ＧａＮ 기판의 제조 방법, 에피택셜 웨이퍼의 제조 방법, 반도체 소자의 제조 방법 및 에피택셜 웨이퍼 Download PDF

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Publication number
KR20090035451A
KR20090035451A KR1020080097152A KR20080097152A KR20090035451A KR 20090035451 A KR20090035451 A KR 20090035451A KR 1020080097152 A KR1020080097152 A KR 1020080097152A KR 20080097152 A KR20080097152 A KR 20080097152A KR 20090035451 A KR20090035451 A KR 20090035451A
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KR
South Korea
Prior art keywords
layer
thickness
epitaxial wafer
gan
gan substrate
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KR1020080097152A
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English (en)
Korean (ko)
Inventor
후미타케 나카니시
요시키 미우라
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스미토모덴키고교가부시키가이샤
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Publication of KR20090035451A publication Critical patent/KR20090035451A/ko

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  • Crystals, And After-Treatments Of Crystals (AREA)
  • Led Devices (AREA)
  • Recrystallisation Techniques (AREA)
KR1020080097152A 2007-10-05 2008-10-02 ＧａＮ 기판의 제조 방법, 에피택셜 웨이퍼의 제조 방법, 반도체 소자의 제조 방법 및 에피택셜 웨이퍼 KR20090035451A (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007262444 2007-10-05
JPJP-P-2007-262444 2007-10-05
JP2008179195A JP5181885B2 (ja) 2007-10-05 2008-07-09 ＧａＮ基板の製造方法、エピウエハの製造方法、半導体素子の製造方法およびエピウエハ
JPJP-P-2008-179195 2008-07-09

Publications (1)

Publication Number Publication Date
KR20090035451A true KR20090035451A (ko) 2009-04-09

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KR1020080097152A KR20090035451A (ko) 2007-10-05 2008-10-02 ＧａＮ 기판의 제조 방법, 에피택셜 웨이퍼의 제조 방법, 반도체 소자의 제조 방법 및 에피택셜 웨이퍼

Country Status (5)

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JP (1) JP5181885B2 (ja)
KR (1) KR20090035451A (ja)
CN (2) CN101452834B (ja)
RU (1) RU2008139466A (ja)
TW (1) TW200936827A (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9741560B2 (en) 2012-01-10 2017-08-22 Samsung Electronics Co., Ltd. Method of growing nitride semiconductor layer

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5737189B2 (ja) 2010-01-15 2015-06-17 三菱化学株式会社 単結晶基板、それを用いて得られるｉｉｉ族窒化物結晶及びｉｉｉ族窒化物結晶の製造方法
JP2012009695A (ja) 2010-06-25 2012-01-12 Showa Denko Kk 半導体発光素子の製造方法、半導体発光素子、電子機器及び機械装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4043087B2 (ja) * 1998-01-23 2008-02-06 日亜化学工業株式会社 窒化物半導体素子の製造方法及び窒化物半導体素子
JP3788041B2 (ja) * 1998-06-30 2006-06-21 住友電気工業株式会社 ＧａＮ単結晶基板の製造方法
JP4948720B2 (ja) * 2001-08-29 2012-06-06 シャープ株式会社 窒素化合物半導体積層物、発光素子、光ピックアップシステム、および窒素化合物半導体積層物の製造方法。
JP3951973B2 (ja) * 2003-06-27 2007-08-01 日亜化学工業株式会社 窒化物半導体素子
JP4333377B2 (ja) * 2004-01-28 2009-09-16 住友電気工業株式会社 ＧａＮ単結晶基板およびその製造方法ならびに発光デバイス
JP3888374B2 (ja) * 2004-03-17 2007-02-28 住友電気工業株式会社 ＧａＮ単結晶基板の製造方法
JP4525309B2 (ja) * 2004-11-19 2010-08-18 日立電線株式会社 Ｉｉｉ−ｖ族窒化物系半導体基板の評価方法
JP4301251B2 (ja) * 2006-02-15 2009-07-22 住友電気工業株式会社 ＧａＮ結晶基板

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9741560B2 (en) 2012-01-10 2017-08-22 Samsung Electronics Co., Ltd. Method of growing nitride semiconductor layer

Also Published As

Publication number Publication date
CN101452834B (zh) 2012-01-11
JP2009102217A (ja) 2009-05-14
JP5181885B2 (ja) 2013-04-10
CN101452834A (zh) 2009-06-10
RU2008139466A (ru) 2010-04-10
CN102437265A (zh) 2012-05-02
TW200936827A (en) 2009-09-01

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