CN101444872A - 用于丝焊的方法和设备 - Google Patents
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Abstract
本发明涉及一种用含铜接合线(2)将元件(9)连接到支撑物(7)的丝焊设备,在所述元件(9)以及所述支撑物(7)上均设置至少一个接合焊盘(4),所述丝焊设备包括引导接合线的引导机构(1)和用于熔化部分接合线(2)的装置(3),所述部分接合线连接到其中一个接合焊盘(4),其中所述引导接合线(2)的引导机构(1)使接合线(2)的熔化部分在接合室(5)内均与至少一个接合焊盘(4)接触,其特征在于,设置至少一个等离子喷嘴(6),借助于所述等离子喷嘴,用于和接合焊盘(4)和/或接合焊盘(4)和/或接合室(5)连接的所述部分接合线(2)能够受到等离子的作用。此外,本发明涉及一种丝焊的方法。
Description
技术领域
本发明涉及一种使用含铜的接合线进行丝焊的设备,其包括引导接合线的引导机构和用于熔化部分接合线的装置,所述接合线连接到接合焊盘,其中所述引导接合线的引导结构体现为这样的方式,所述接合线熔化后的部分在接合室内与接合焊盘接触。此外,本发明涉及一种用于丝焊的方法。
背景技术
已知的用于丝焊的方法和设备有许多。所说的丝焊表示一种连接方法,电气元件特别是微电子元件或非电子(微)元件借助丝焊设有电连接和/或使用非常细的线,即所谓的接合线被连接到芯片。
已知的各种方法多数使用金线或金合金作为接合线。此外,也使用铝线和铜线。
然而,在过去,使用铜线或含铜的接合线已经露出一些困难,这些困难好像是由于附在上面的氧化物引起的。典型地,铜至少会轻度地发生氧化。由于氧化物的存在,导致含铜的接合线的导电性和压合的接头强度降低。
美国专利US6234376公开了一种使用保护气体的、用于丝焊的方法和设备,所述保护气体降低氧化物的形成并由此使得铜或铝线能够用作接合线。
此外,术语含铜的接合线包括纯铜线以及含有至少10%的铜的合金线。本发明的目的是提供一种借助含铜接合线的用于丝焊的改进设备和改进方法。
发明内容
上述目的通过这样的设备得到解决,即所述设备包括至少一个等离子喷嘴,在等离子喷嘴的帮助下,部分接合线和/或部分接合焊盘和/或部分接合室,这些都被用于连接到接合焊盘,能够受到等离子的作用。
由于等离子,能够有益地发生接合线与接合焊盘表面的变形及激活。连接方法的伴随产物,其受等离子的作用,被清洁并且其表面被激活。有益地,对应按照本发明的丝焊,这得到特别好的效果。等离子的存在减少了部分接合线(接合线的熔化部分)的有效氧化物,所述部分接合线提供到接合焊盘的连接和/或接合焊盘和/或接合室,并且由此防止大部分氧化物的再生,使得连接质量高、可靠性高,这种连接通常没有氧化物。
优选地,等离子喷嘴以这样的方式进行安装,即接合线的熔化部分,其用于提供到接合焊盘的连接,受到等离子的作用。按照本发明的有益改进,等离子喷嘴被以这样的方式安装,即接合焊盘额外地或有选择地受等离子的作用。本发明的特别有益的实施方案提供整个接合室,因此至少接合线的熔化部分和接合焊盘,如果可能应用的话,还有设备的相邻部分,比如用于熔化的设备,受到等离子的作用而且等离子分别这样分布,即所述部件至少部分地被等离子包围。
特别有益地,等离子喷嘴的定向和/或定位能够分别进行调整和选择,以达到以目标为导向,从而离开等离子喷嘴的等离子流到达作为目标的预先选定的区域。前面已经分别提及本发明的设备的特别有益的区域和部件。所述等离子喷嘴体现为喷嘴对。在一个具有多个喷嘴的实施方案中,例如3,4,5个喷嘴彼此靠近即所谓的喷嘴批,已经证明在一些情况下具有有益的效果。特别有益地,一个或多个等离子喷嘴还能够包括多个用于扩大等离子流的输送口。
可能的是建立下面这样的等离子成分作为本发明的特别有益的成分:氢、氩及其混合物以及氢与氮的混合物,还有氩的其它附加成分。
优选地,在大气压力下产生等离子。这具有的优点是,不是一定需要在其中要产生等离子的特殊的室。然而,也可能的是,体现为低压等离子,例如小于10毫巴的压力。
特别有益地,由此,等离子喷嘴的定向体现为可调整的,于是离开等离子喷嘴的等离子流到达作为目标的预先选择的区域成为可能。
按照本发明的另一个有益实施方案,等离子喷嘴被安装在接合线离开引导机构的区域。于是等离子流,比如被引向接合线。优选地,等离子流与接合线的纵向轴线成直角。
按照本发明的又一个有益实施方案,提供第二等离子喷嘴。优选地,该第二等离子喷嘴这样定向,即它与第一等离子喷嘴相比作用在不同的区域。在可选方案中,同一区域也是可以的,或者直接相邻的区域由第二等离子喷嘴发生作用,于是有效的区域增加。
等离子喷嘴被连接到等离子发生单元,例如,该单元又连接到气源,其中等离子发生单元包括至少两个电极,在两个电极之间实现放电,在放电的帮助下在由气源供应的处理气体中产生等离子。
按照本发明特别优选的方案,第二等离子喷嘴被指向接合焊盘,特别是与接合焊盘成直角。借助具体说明的实施方案能够获得等离子的上述积极效果。
本发明适用于通常的丝焊,特别适合于球焊以及楔焊。
本发明的一个实施方案,其适合于球焊,作为一个例子首先详细地描述如下:当球焊时,丝焊设备设有引导接合线的引导机构,其体现为毛细导管并且包括毛细导管头,接合线通过毛细导管头被引导。此外,所述设备包括用于接受保护气体的管,其包括第一和第二开口,其中所述两个开口在垂直于管轴向方向的方向上上下对齐,而且至少毛细导管头的顶端能够被引导穿过所述开口。另外,设置用于熔化接合线端部的装置,其从毛细导管头的顶端突出,于是接合线的端部形成为球形并至少穿过毛细导管头的顶端与接合焊盘接触。
在该实施例的背景下,当等离子喷嘴沿着平行于所述管的轴线被安装在管内时,是特别有益的。在可选方案中,等离子喷嘴能够安装为相对于所述管的轴线发生倾斜。特别地,它以这样的方式发生倾斜,即离开等离子喷嘴的等离子流的流向是面向接合焊盘。按照特别优选的改进,等离子喷嘴能体现为这样的方式并以这样的方式进行安装,即被等离子流作用的区域包括接合线的端部和用于熔化接合线端部的装置的冒出火焰,所述装置从毛细导管头的顶端突出。用于熔化接合线的装置的有益实施方案将在后面进行说明。
作为另一实施例,本发明的一个实施方案,其适合于楔形焊,将作为另一实施例详细地描述如下:当楔形焊时,接合线也通过毛细导管或通过楔形压头被引导。然而,该实施方案未设有接合线的球形、熔化端部。相反,接合线在任一选择位置被熔化,然后与接合焊盘接触。
对于许多具体应用,球焊和楔焊的组合是特别有益的,其中第一连接体现为球焊,第二连接体现为楔焊。
优选地,用于引导接合线的引导机构体现为可移动的,特别是可垂直和/或水平地移动。
已经证明多个装置可适用于熔化本发明的接合线。应当将两种可能性挑选出来并且在下面更详细地描述:
作为熔化接合线的装置,设定为EFO装置(电子放焰装置),其包括电极,所述电极安装成能够释放电弧的方式。
在可选方案中,富氢的氢-氧焰能够充当熔化接合线的设备,其体现为这样的方式,即它加热并熔化接合线的一部分,这就提供了到接合焊盘的连接。在球焊的情况下,接合线的端部由此变形为球的形式。
优选地,等离子发生单元可利用来产生等离子,等离子从等离子喷嘴逸出。优选地,所述等离子发生单元包括下述部件:产生等离子的气源,其在所有情况下与盛放氢和/或氩和/或氮的容器接触。如果可应用的话,用来预先混合所需的成分的混合单元是有益的。优选地,特别是借助阻塞,经由气源的处理气体的流入是受到限制的。特别有益地,设定总通过量为小于3m3每小时。一方面,等离子产生单元由此被连接到等离子喷嘴,另一方面,被连接到气源,其中等离子产生单元包括至少两个电极,在两个电极之间发生放电,而且在经由气源供应的处理气体中产生等离子。
按照本发明特别有益的改进,目的是要等离子的温度高至200℃。从80℃到120℃的温度范围已经证明是特别有益的。
参照所述方法,前述发明目的得到解决,其中,使用至少一个等离子喷嘴,在所述喷嘴的帮助下,部分接合线,其提供到接合焊盘和/或接合焊盘和/或接合室的连接,受到等离子的作用。
为了熔化接合线以及为了产生等离子,参照以举例的方式在前面讲述过的实施方案的各种可能性。
优选地,离开等离子喷嘴的等离子流以目标定位的方式进行调整,从而作为目标的提前被选中的区域受到等离子的作用。
本发明分别适合于球焊和楔焊方法及这些方法的步骤。本发明还能被用在已经组配好的压合方法中,其都包括球焊的方法步骤和楔焊的方法步骤。
本发明包括的许多有益效果需要再次提及,由于这些有益效果,连接的可靠性和质量稳定性得到提高。
本发明以及本发明的其它实施方式将借助附图所示的示意性实施例在下面详细地介绍。
附图说明
图1表示按照本发明的丝焊设备。
具体实施方式
详细地,附图表示用来引导含铜接合线2的引导机构1与用来熔化部分接合线2的装置3,接合线的部分熔化提供了与微型芯片9的连接。微型芯片9被连接到作为底座的支撑物7。例如,支撑物7能够体现为印刷电路板7。其借助细丝(接合线2)在压合过程中被连接的接合焊盘4,被放置在两个元件(微型芯片9和支撑物7)上。
用来引导接合线2的引导机构1体现为,熔化后的部分接合线2在接合室5内与接合焊盘4接触。按照本发明,设置等离子喷嘴6,在所述喷嘴的帮助下,部分接合线2(其提供与微型芯片9的接合焊盘4的连接)受到等离子的作用。此处,等离子喷嘴6包括多个用于扩大等离子流的输出口8。引导机构1体现为能够垂直地移动,并且能够下降以连接接合线和接合焊盘4。
Claims (9)
1、一种用含铜接合线(2)将元件(9)连接到支撑物(7)的丝焊设备,在所述元件(9)以及所述支撑物(7)上均设置至少一个接合焊盘(4),所述丝焊设备包括引导接合线的引导机构(1)和用于熔化部分接合线(2)的装置(3),所述部分接合线连接到其中一个接合焊盘(4),其中所述引导接合线(2)的引导机构(1)使接合线(2)的熔化部分在接合室(5)内均与至少一个接合焊盘(4)接触,其特征在于,设置至少一个等离子喷嘴(6),借助于所述等离子喷嘴,用于和接合焊盘(4)和/或接合焊盘(4)和/或接合室(5)连接的所述部分接合线(2)能够受到等离子的作用。
2、如权利要求1所述的设备,其特征在于,所述等离子喷嘴(6)的定向能够进行调整,从而离开所述等离子喷嘴(6)的等离子流到达预先选定为目标的区域。
3、如权利要求1或2所述的设备,其特征在于,所述等离子喷嘴(6)被安装在所述接合线(2)离开所述引导机构(1)的区域。
4、如权利要求1至3任一个所述的设备,其特征在于,设置第二等离子喷嘴(6)。
5、如权利要求4所述的设备,其特征在于,所述第二等离子喷嘴(6)指向接合焊盘(4),特别是以直角指向接合焊盘(4)。
6、一种用含铜接合线(2)将元件(9)连接到支撑物(7)的丝焊方法,在所述元件(9)以及所述支撑物(7)上均设置至少一个接合焊盘(4),所述接合线(2)利用引导机构(1)与用于熔化接合线(2)的装置(3)形成有效连接,于是用于连接到其中一个接合焊盘(4)的部分接合线(2)被熔化并且所述接合线(2)的熔化部分在接合室(5)内均与至少一个接合焊盘(4)接触,其特征在于,使用至少一个等离子喷嘴(6),借助于所述等离子喷嘴,用于连接到接合焊盘(4)和/或接合焊盘(4)和/或接合室(5)的所述部分接合线(2)受到等离子的作用。
7、如权利要求6所述的方法,其特征在于,离开等离子喷嘴(6)的等离子流能够调整为目标定位,于是预先选定为目标的区域受到等离子的作用。
8、如权利要求6或7所述的方法,其特征在于,使用第二等离子喷嘴(6)。
9、如权利要求6至8任一个所述的方法,其特征在于,离开所述第二等离子喷嘴(6)的等离子流指向接合焊盘(4),特别是以直角指向接合焊盘(4)。
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DE102007057429A DE102007057429A1 (de) | 2007-11-29 | 2007-11-29 | Vorrichtung und Verfahren zum Drahtbonden |
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AT (1) | ATE499173T1 (zh) |
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WO2014054305A1 (ja) * | 2012-10-05 | 2014-04-10 | 株式会社新川 | 酸化防止ガス吹き出しユニット |
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US4523071A (en) * | 1984-05-14 | 1985-06-11 | Hughes Aircraft Company | Method and apparatus for forming a ball at the end of a wire |
US4976393A (en) * | 1986-12-26 | 1990-12-11 | Hitachi, Ltd. | Semiconductor device and production process thereof, as well as wire bonding device used therefor |
JP3206142B2 (ja) * | 1992-10-15 | 2001-09-04 | 松下電器産業株式会社 | ワイヤボンディング装置及びワイヤボンディング方法 |
US5676856A (en) * | 1994-04-25 | 1997-10-14 | Matsushita Electric Industrial Co., Ltd. | Electric discharge apparatus for cleaning electrode on workpiece and method thereof |
US6429400B1 (en) * | 1997-12-03 | 2002-08-06 | Matsushita Electric Works Ltd. | Plasma processing apparatus and method |
JP2000340599A (ja) * | 1999-05-26 | 2000-12-08 | Canon Inc | ワイヤボンディング装置及び該ワイヤボンディング装置によるワイヤボンディング方法 |
US6234376B1 (en) | 1999-07-13 | 2001-05-22 | Kulicke & Soffa Investments, Inc. | Supplying a cover gas for wire ball bonding |
US6320155B1 (en) * | 2000-01-11 | 2001-11-20 | Geomat Insights, Llc | Plasma enhanced wire bonder |
US6793759B2 (en) * | 2001-10-09 | 2004-09-21 | Dow Corning Corporation | Method for creating adhesion during fabrication of electronic devices |
JP2003163235A (ja) * | 2001-11-29 | 2003-06-06 | Shinkawa Ltd | ワイヤボンディング装置 |
US6720204B2 (en) * | 2002-04-11 | 2004-04-13 | Chartered Semiconductor Manufacturing Ltd. | Method of using hydrogen plasma to pre-clean copper surfaces during Cu/Cu or Cu/metal bonding |
US20060219754A1 (en) * | 2005-03-31 | 2006-10-05 | Horst Clauberg | Bonding wire cleaning unit and method of wire bonding using same |
JP4425190B2 (ja) * | 2005-06-30 | 2010-03-03 | 株式会社新川 | ボンディング装置 |
JP2007012910A (ja) * | 2005-06-30 | 2007-01-18 | Shinkawa Ltd | ボンディング装置 |
WO2007010510A2 (en) * | 2006-04-03 | 2007-01-25 | Michael Mayer | Method and device for wire bonding with low mechanical stress |
JP4700570B2 (ja) * | 2006-07-14 | 2011-06-15 | 株式会社新川 | ボンディング装置並びにボンディングツール先端部の洗浄方法及びプログラム |
JP4787104B2 (ja) * | 2006-07-31 | 2011-10-05 | 株式会社新川 | ボンディング装置 |
JP4700633B2 (ja) * | 2007-02-15 | 2011-06-15 | 株式会社新川 | ワイヤ洗浄ガイド |
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KR20090056911A (ko) | 2009-06-03 |
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EP2065115B1 (de) | 2011-02-23 |
TW200939372A (en) | 2009-09-16 |
US20090140029A1 (en) | 2009-06-04 |
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