CN101441625A - Probe card tester in silicon wafer characteristic test and method for counting use amount of probe card - Google Patents
Probe card tester in silicon wafer characteristic test and method for counting use amount of probe card Download PDFInfo
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- CN101441625A CN101441625A CNA2007100942756A CN200710094275A CN101441625A CN 101441625 A CN101441625 A CN 101441625A CN A2007100942756 A CNA2007100942756 A CN A2007100942756A CN 200710094275 A CN200710094275 A CN 200710094275A CN 101441625 A CN101441625 A CN 101441625A
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Abstract
The invention discloses a probe card tester in a wafer property test. The tester comprises a probe card usage database and a test condition database which are associated through information of the probe card type. The invention also discloses a method for counting the usage of the probe card in the wafer property test by utilizing the probe card tester; the tester obtains test condition information and the used probe card type information; the information of single usage of the probe card is inquired in the test condition database and is associated with the probe card usage database through the information of the probe card type so as to obtain accumulated usage information; and the accumulated usage information is stored. According to practical using condition, the tester objectively counts the use times of the probe card, achieves the function of effectively monitoring the use state of the probe card, and improves the management level of the probe card in automation production by matching with the regular maintenance and the service life management of the probe card.
Description
Technical field
The present invention relates to a kind of testing apparatus, especially a kind of silicon wafer characteristic test middle probe card tester.The present invention also designs a kind of method of counting of silicon wafer characteristic test middle probe card use amount.
Background technology
In the ic component test process, often to use probe wafer is tested.The probe that uses all is packaged on the probe now, needs timely replacing after probe uses up, thereby test job can be carried out smoothly.The number system of existing probe consumption as shown in Figure 1, this system sets up probe consumption enumeration data storehouse in probe tester outside, data are directly communicated by letter, accept to this database with probe station, content in this database is as shown in table 1, it preestablishes product category and employed probe model and each fields such as consumption, realizes counting to this probe actual amount by the wafer piece number and the product of each consumption that obtain after probe station test.
| Product category | The probe model | Probe consumption/every piece of wafer |
| AAA | A | 50 times |
| BBB | B | 100 times |
| CCC | C | 80 times |
| DDD | D | 30 times |
| ...... | ...... | ...... |
Table 1
But, the accuracy of this method of counting is based upon on the basis that product must use identical test condition (being identical probe consumption) fully, if the continuous changed test condition of product, the actual amount of probe can can't be calculated accurately because of the fixed numbers that database middle probe card consumption field is set under the different condition.Calculate the probe consumption even if in this database, increase the test condition field related, also can need frequent maintenance data base (revising the setting value of probe consumption) to make whole counting process can't be fit to needs of production because of the continuous conversion of test condition under the different situations with product category.
For example, in table 1, product A AA has set the number of times 50 times of probe consumption in advance, but if product A AA needs often to use 2 operating conditions, its probe consumption corresponds to respectively 50 times and 100 times, according to the setting value of database middle probe card consumption, the probe actual amount can only be counted according to 50 times.This just causes the counting of probe consumption inaccurate, and probe is that arranged certain serviceable life, if the use of probe has surpassed serviceable life, will influence the test effect; Just do not change serviceable life if the use of probe reaches as yet, can cause waste again.
Summary of the invention
Technical matters to be solved by this invention provides a kind of silicon wafer characteristic test middle probe card tester, and the method for counting that adopts the probe use amount that above-mentioned detecting card tester realizes, can be according to the information of current test condition the consumption of real-time, correct calculating probe.
For solving the problems of the technologies described above, the technical scheme of silicon wafer characteristic test middle probe card tester of the present invention is, comprise probe usage data storehouse and test condition data storehouse, described probe usage data includes the probe type information in the storehouse, and with the corresponding accumulative total of described probe model use amount information; Described test condition data includes the probe type information in the storehouse, and with the information of the corresponding various test conditions of described probe type information, and with described various test condition information corresponding under this test condition the information of probe single use amount; Described probe usage data storehouse and described test condition data storehouse are interrelated by the probe type information.
The present invention also provides a kind of method of counting that utilizes the silicon wafer characteristic test middle probe card use amount of above-mentioned silicon wafer characteristic test middle probe card tester realization, its technical scheme is, described tester is obtained the information of described test condition information and employed probe model, in described test condition data storehouse, inquire the information of described probe single use amount according to the information of described test condition information and employed probe model, associating information by described probe model arrives described probe usage data storehouse then, the wafer number that described probe single use amount multiply by test just obtains the actual use amount of probe, actual use amount to described probe adds up, obtain accumulative total use amount information, with described accumulative total use amount information according in the described probe usage data of storing into of the probe type information correspondence storehouse.
The present invention has added up the access times of probe objectively according to actual service conditions, has played the effect of effective monitoring probe user mode, cooperates the periodic maintenance and the management in serviceable life of probe, has improved the management level of automated production middle probe card.
Description of drawings
The present invention is further detailed explanation below in conjunction with drawings and Examples:
Fig. 1 is the synoptic diagram of existing detecting probe card testing system;
Fig. 2 is the synoptic diagram of the test macro of employing probe tester of the present invention.
Embodiment
Silicon wafer characteristic test middle probe card tester of the present invention comprises probe usage data storehouse and test condition data storehouse, and described probe usage data includes the probe type information in the storehouse, and with the corresponding accumulative total of described probe model use amount information; Described test condition data includes the probe type information in the storehouse, and with the information of the corresponding various test conditions of described probe type information, and with described various test condition information corresponding under this test condition the information of probe single use amount; Described probe usage data storehouse and described test condition data storehouse are interrelated by the probe type information.
Also include in the described probe usage data storehouse and the corresponding probe of the described probe model information in serviceable life.
Described test condition data storehouse also comprises the information of product category, and the information of described product category is corresponding mutually with described probe type information, test condition information and probe single use amount information.
Described probe usage data storehouse internal data structure can be joined and is shown in Table 2:
| The probe model | The accumulative total use amount | PM returns number | Serviceable life | Remarks |
| The A card | 500 | ％％％ | 2000 | ％％％ |
| The B card | ％％％ | ％％％ | ％％％ | ％％％ |
| The C card | ％％％ | ％％％ | ％％％ | ％％％ |
| The D card | ％％％ | ％％％ | ％％％ | ％％％ |
| ...... | ...... | ...... | ...... | ...... |
Table 2
Described test condition data storehouse internal data structure can be joined and is shown in Table 3:
| Product category | The probe model | Test condition | The single use amount |
| AAA | The A card | Condition 1 | ％％％ |
| AAA | The A card | Condition 2 | 50 |
| BBB | The B card | Condition 3 | ％％％ |
| BBB | The C card | Condition 4 | ％％％ |
| ...... | ...... | ...... | ...... |
Silicon wafer characteristic test middle probe card tester of the present invention in use as shown in Figure 2, described probe tester is connected on the probe station, in time obtains the data message such as the various needs of wafer number, test condition etc.
The present invention also provides a kind of method of counting that utilizes the silicon wafer characteristic test middle probe card use amount of above-mentioned silicon wafer characteristic test middle probe card tester realization, described tester is obtained the information of described test condition information and employed probe model, in described test condition data storehouse, inquire the information of described probe single use amount according to the information of described test condition information and employed probe model, associating information by described probe model arrives described probe usage data storehouse then, the wafer number that described probe single use amount multiply by test just obtains the actual use amount of probe, actual use amount to described probe adds up, obtain accumulative total use amount information, with described accumulative total use amount information according in the described probe usage data of storing into of the probe type information correspondence storehouse.
Corresponding accumulative total use amount information is more than or equal to serviceable life during information in the described probe usage data storehouse, and described probe tester sends the prompting of changing probe.
Described tester is obtained the information of described test condition information and employed probe model, and obtain the information of described product category, information according to described test condition information and employed probe model, and the information of product category, in described test condition data storehouse, inquire the information of described probe single use amount.
In conjunction with the content of Fig. 2, table 2 and table 3, now lift the specific implementation process of the method for counting of example explanation silicon wafer characteristic test middle probe card use amount of the present invention.Described probe tester obtains information, learn that the probe model is the A card, product category is AAA, test condition is a condition 2, wafer number is 7, described probe tester is inquired about in described test condition data storehouse, obtaining the single use amount is 50, the actual use amount that process calculates this test is the actual use amount 350 of single use amount 50 * wafer number 7=, before this, the accumulative total use amount of the A card in the described probe usage data storehouse is 500, so the probe tester just is updated to 500+350=850 with the accumulative total use amount of the A card in the probe usage data storehouse.When adding up use amount more than or equal to serviceable life, described probe tester sends the prompting of changing probe.
In sum, the present invention has added up the access times of probe objectively according to actual service conditions, play the effect of effective monitoring probe user mode, cooperated the periodic maintenance and the management in serviceable life of probe, improved the management level of automated production middle probe card.
Claims (6)
1. silicon wafer characteristic test middle probe card tester, it is characterized in that, comprise probe usage data storehouse and test condition data storehouse, described probe usage data includes the probe type information in the storehouse, and with the corresponding accumulative total of described probe model use amount information; Described test condition data includes the probe type information in the storehouse, and with the information of the corresponding various test conditions of described probe type information, and with described various test condition information corresponding under this test condition the information of probe single use amount; Described probe usage data storehouse and described test condition data storehouse are interrelated by the probe type information.
2. silicon wafer characteristic test middle probe card tester according to claim 1 is characterized in that, also includes in the described probe usage data storehouse and the corresponding probe of the described probe model information in serviceable life.
3. silicon wafer characteristic test middle probe card tester according to claim 1, it is characterized in that, described test condition data storehouse also comprises the information of product category, and the information of described product category is corresponding mutually with described probe type information, test condition information and probe single use amount information.
4. the method for counting of the silicon wafer characteristic test middle probe card use amount that realizes of any described silicon wafer characteristic test middle probe card tester of utilization such as claim 1 to 3, it is characterized in that, described tester is obtained the information of described test condition information and employed probe model, in described test condition data storehouse, inquire the information of described probe single use amount according to the information of described test condition information and employed probe model, associating information by described probe model arrives described probe usage data storehouse then, the wafer number that described probe single use amount multiply by test just obtains the actual use amount of probe, actual use amount to described probe adds up, obtain accumulative total use amount information, with described accumulative total use amount information according in the described probe usage data of storing into of the probe type information correspondence storehouse.
5. the method for counting of silicon wafer characteristic test middle probe card use amount according to claim 4, it is characterized in that, corresponding accumulative total use amount information is more than or equal to serviceable life during information in the described probe usage data storehouse, and described probe tester sends the prompting of changing probe.
6. the method for counting of silicon wafer characteristic test middle probe card use amount according to claim 4, it is characterized in that, described tester is obtained the information of described test condition information and employed probe model, and obtain the information of described product category, information according to described test condition information and employed probe model, and the information of product category, in described test condition data storehouse, inquire the information of described probe single use amount.
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| CN2007100942756A CN101441625B (en) | 2007-11-23 | 2007-11-23 | Method for counting use amount of probe card by using probe card tester |
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| CN2007100942756A CN101441625B (en) | 2007-11-23 | 2007-11-23 | Method for counting use amount of probe card by using probe card tester |
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| CN101441625A true CN101441625A (en) | 2009-05-27 |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103217558A (en) * | 2013-03-14 | 2013-07-24 | 上海华力微电子有限公司 | Probe card maintaining method |
| CN103336256A (en) * | 2013-06-26 | 2013-10-02 | 上海华力微电子有限公司 | WAT probe card intelligent processing system and method |
| CN103400238A (en) * | 2013-08-14 | 2013-11-20 | 上海华力微电子有限公司 | Wafer test probe card management system and using method thereof |
| CN103809099A (en) * | 2014-03-05 | 2014-05-21 | 上海华虹宏力半导体制造有限公司 | Method for detecting test times of wafer probe |
| CN104237695A (en) * | 2014-09-24 | 2014-12-24 | 苏州博众精工科技有限公司 | Probe service life testing mechanism |
| CN104636863A (en) * | 2015-01-07 | 2015-05-20 | 青岛海信移动通信技术股份有限公司 | Testing method and equipment of tool state |
| CN109540051A (en) * | 2018-11-21 | 2019-03-29 | 中国科学院苏州纳米技术与纳米仿生研究所南昌研究院 | A kind of monitoring method of wafer test probe card wear intensity |
| CN111308302A (en) * | 2018-12-12 | 2020-06-19 | 东京毅力科创株式会社 | Probe card management system and probe card management method |
| CN112069170A (en) * | 2020-07-31 | 2020-12-11 | 嘉兴威伏半导体有限公司 | Probe card cloud management system |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN2311004Y (en) * | 1997-02-18 | 1999-03-17 | 明碁电脑股份有限公司 | Circuit board test connection device |
| US6400173B1 (en) * | 1999-11-19 | 2002-06-04 | Hitachi, Ltd. | Test system and manufacturing of semiconductor device |
| CN100357745C (en) * | 2004-02-17 | 2007-12-26 | 财团法人工业技术研究院 | Integral probe card and assembling mode |
| CN1770415A (en) * | 2004-11-03 | 2006-05-10 | 周万全 | Thin film type wafer probing apparatus and probe sensing and transmission structure thereof |
| CN1979197A (en) * | 2005-12-08 | 2007-06-13 | 上海华虹Nec电子有限公司 | Method for increasing synchronous detecting number of chips |
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| CN103217558B (en) * | 2013-03-14 | 2015-08-19 | 上海华力微电子有限公司 | A kind of probe maintaining method |
| CN103217558A (en) * | 2013-03-14 | 2013-07-24 | 上海华力微电子有限公司 | Probe card maintaining method |
| CN103336256A (en) * | 2013-06-26 | 2013-10-02 | 上海华力微电子有限公司 | WAT probe card intelligent processing system and method |
| CN103336256B (en) * | 2013-06-26 | 2016-03-30 | 上海华力微电子有限公司 | WAT probe intelligent processing system and method |
| CN103400238A (en) * | 2013-08-14 | 2013-11-20 | 上海华力微电子有限公司 | Wafer test probe card management system and using method thereof |
| CN103809099A (en) * | 2014-03-05 | 2014-05-21 | 上海华虹宏力半导体制造有限公司 | Method for detecting test times of wafer probe |
| CN103809099B (en) * | 2014-03-05 | 2016-09-28 | 上海华虹宏力半导体制造有限公司 | The detection method of wafer probe testing time |
| CN104237695A (en) * | 2014-09-24 | 2014-12-24 | 苏州博众精工科技有限公司 | Probe service life testing mechanism |
| CN104237695B (en) * | 2014-09-24 | 2017-01-25 | 苏州博众精工科技有限公司 | Probe service life testing mechanism |
| CN104636863A (en) * | 2015-01-07 | 2015-05-20 | 青岛海信移动通信技术股份有限公司 | Testing method and equipment of tool state |
| CN109540051A (en) * | 2018-11-21 | 2019-03-29 | 中国科学院苏州纳米技术与纳米仿生研究所南昌研究院 | A kind of monitoring method of wafer test probe card wear intensity |
| CN111308302A (en) * | 2018-12-12 | 2020-06-19 | 东京毅力科创株式会社 | Probe card management system and probe card management method |
| CN111308302B (en) * | 2018-12-12 | 2022-09-16 | 东京毅力科创株式会社 | Probe card management system and probe card management method |
| CN112069170A (en) * | 2020-07-31 | 2020-12-11 | 嘉兴威伏半导体有限公司 | Probe card cloud management system |
| CN112069170B (en) * | 2020-07-31 | 2024-04-09 | 嘉兴威伏半导体有限公司 | Probe Card Cloud Management System |
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| CN101441625B (en) | 2010-11-03 |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20140109 |
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Free format text: CORRECT: ADDRESS; FROM: 201206 PUDONG NEW AREA, SHANGHAI TO: 201203 PUDONG NEW AREA, SHANGHAI |
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Effective date of registration: 20140109 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Patentee after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201206, Shanghai, Pudong New Area, Sichuan Road, No. 1188 Bridge Patentee before: Shanghai Huahong NEC Electronics Co., Ltd. |