CN101414564B - 低温多晶硅薄膜晶体管的制造方法 - Google Patents
低温多晶硅薄膜晶体管的制造方法 Download PDFInfo
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- CN101414564B CN101414564B CN200810203243XA CN200810203243A CN101414564B CN 101414564 B CN101414564 B CN 101414564B CN 200810203243X A CN200810203243X A CN 200810203243XA CN 200810203243 A CN200810203243 A CN 200810203243A CN 101414564 B CN101414564 B CN 101414564B
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- Prior art keywords
- film transistor
- layer
- ohmic contact
- low
- amorphous silicon
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 51
- 238000000034 method Methods 0.000 title claims abstract description 43
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 33
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 32
- 239000010409 thin film Substances 0.000 claims abstract description 11
- 229920005591 polysilicon Polymers 0.000 claims description 43
- 239000010408 film Substances 0.000 claims description 29
- 239000000758 substrate Substances 0.000 claims description 28
- 229910052751 metal Inorganic materials 0.000 claims description 18
- 239000002184 metal Substances 0.000 claims description 18
- 239000012528 membrane Substances 0.000 claims description 13
- 230000008021 deposition Effects 0.000 claims description 7
- 238000005530 etching Methods 0.000 claims description 7
- 239000012212 insulator Substances 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000005224 laser annealing Methods 0.000 claims description 4
- 238000005516 engineering process Methods 0.000 abstract description 16
- 230000008569 process Effects 0.000 abstract description 13
- 238000002347 injection Methods 0.000 abstract description 4
- 239000007924 injection Substances 0.000 abstract description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- 239000011521 glass Substances 0.000 description 5
- 238000000151 deposition Methods 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000004411 aluminium Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000003475 lamination Methods 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000035800 maturation Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000006396 nitration reaction Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
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- Thin Film Transistor (AREA)
Abstract
Description
Claims (4)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN200810203243XA CN101414564B (zh) | 2008-11-24 | 2008-11-24 | 低温多晶硅薄膜晶体管的制造方法 |
Applications Claiming Priority (1)
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CN200810203243XA CN101414564B (zh) | 2008-11-24 | 2008-11-24 | 低温多晶硅薄膜晶体管的制造方法 |
Publications (2)
Publication Number | Publication Date |
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CN101414564A CN101414564A (zh) | 2009-04-22 |
CN101414564B true CN101414564B (zh) | 2010-07-14 |
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CN200810203243XA Expired - Fee Related CN101414564B (zh) | 2008-11-24 | 2008-11-24 | 低温多晶硅薄膜晶体管的制造方法 |
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CN (1) | CN101414564B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103730364A (zh) * | 2012-10-15 | 2014-04-16 | 群康科技(深圳)有限公司 | 低温多晶硅薄膜晶体管、其制备方法及显示设备 |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103545319A (zh) * | 2013-11-08 | 2014-01-29 | 京东方科技集团股份有限公司 | 低温多晶硅薄膜晶体管阵列基板及其制作方法、显示装置 |
CN103943509B (zh) * | 2014-04-11 | 2017-02-15 | 深圳市华星光电技术有限公司 | 薄膜晶体管的制程方法 |
CN104362180B (zh) | 2014-10-15 | 2017-02-22 | 京东方科技集团股份有限公司 | 一种薄膜晶体管及其制作方法、显示基板和显示装置 |
CN105390443B (zh) * | 2015-12-03 | 2018-11-23 | 深圳市华星光电技术有限公司 | Tft基板的制作方法 |
CN105428243B (zh) * | 2016-01-11 | 2017-10-24 | 京东方科技集团股份有限公司 | 一种薄膜晶体管及制作方法、阵列基板和显示装置 |
CN106653572B (zh) * | 2016-12-27 | 2020-01-17 | 中国科学院宁波材料技术与工程研究所 | 多晶硅薄膜的制备方法以及光电器件 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN86101937A (zh) * | 1986-03-22 | 1987-11-11 | 江西大学 | 电阻—氧化物—半导体场效应晶体管 |
US5641695A (en) * | 1995-10-02 | 1997-06-24 | Motorola | Method of forming a silicon carbide JFET |
CN1619392A (zh) * | 2003-11-11 | 2005-05-25 | Lg.菲利浦Lcd株式会社 | 包括多晶硅薄膜晶体管的液晶显示器件及其制造方法 |
CN2717021Y (zh) * | 2004-07-22 | 2005-08-10 | 广辉电子股份有限公司 | 低温多晶硅薄膜晶体管 |
-
2008
- 2008-11-24 CN CN200810203243XA patent/CN101414564B/zh not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN86101937A (zh) * | 1986-03-22 | 1987-11-11 | 江西大学 | 电阻—氧化物—半导体场效应晶体管 |
US5641695A (en) * | 1995-10-02 | 1997-06-24 | Motorola | Method of forming a silicon carbide JFET |
CN1619392A (zh) * | 2003-11-11 | 2005-05-25 | Lg.菲利浦Lcd株式会社 | 包括多晶硅薄膜晶体管的液晶显示器件及其制造方法 |
CN2717021Y (zh) * | 2004-07-22 | 2005-08-10 | 广辉电子股份有限公司 | 低温多晶硅薄膜晶体管 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103730364A (zh) * | 2012-10-15 | 2014-04-16 | 群康科技(深圳)有限公司 | 低温多晶硅薄膜晶体管、其制备方法及显示设备 |
CN103730364B (zh) * | 2012-10-15 | 2017-02-15 | 群康科技(深圳)有限公司 | 低温多晶硅薄膜晶体管、其制备方法及显示设备 |
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CN101414564A (zh) | 2009-04-22 |
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