CN101363920B - 中折射率光学薄膜用蒸发材料及制备方法 - Google Patents
中折射率光学薄膜用蒸发材料及制备方法 Download PDFInfo
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- CN101363920B CN101363920B CN2008102225023A CN200810222502A CN101363920B CN 101363920 B CN101363920 B CN 101363920B CN 2008102225023 A CN2008102225023 A CN 2008102225023A CN 200810222502 A CN200810222502 A CN 200810222502A CN 101363920 B CN101363920 B CN 101363920B
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- optical film
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- 239000000463 material Substances 0.000 title claims abstract description 63
- 239000012788 optical film Substances 0.000 title claims description 20
- 238000004519 manufacturing process Methods 0.000 title description 4
- 230000008016 vaporization Effects 0.000 title 1
- 238000001704 evaporation Methods 0.000 claims abstract description 39
- 238000002360 preparation method Methods 0.000 claims abstract description 13
- 239000002994 raw material Substances 0.000 claims abstract description 6
- 150000001875 compounds Chemical class 0.000 claims abstract description 5
- 238000003746 solid phase reaction Methods 0.000 claims abstract description 5
- 229910017414 LaAl Inorganic materials 0.000 claims description 5
- 238000000048 melt cooling Methods 0.000 claims description 2
- 239000010408 film Substances 0.000 abstract description 18
- 239000000758 substrate Substances 0.000 abstract description 16
- 238000000034 method Methods 0.000 abstract description 12
- 230000003287 optical effect Effects 0.000 abstract description 7
- 239000000126 substance Substances 0.000 abstract description 7
- 239000010409 thin film Substances 0.000 abstract description 7
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract description 5
- 238000002844 melting Methods 0.000 abstract description 5
- 230000008018 melting Effects 0.000 abstract description 5
- 239000011347 resin Substances 0.000 abstract description 5
- 229920005989 resin Polymers 0.000 abstract description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 3
- 239000010949 copper Substances 0.000 abstract description 3
- 229910052802 copper Inorganic materials 0.000 abstract description 3
- 239000010453 quartz Substances 0.000 abstract description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052593 corundum Inorganic materials 0.000 abstract 2
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 2
- 229910002244 LaAlO3 Inorganic materials 0.000 abstract 1
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum oxide Inorganic materials [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 abstract 1
- 238000010309 melting process Methods 0.000 abstract 1
- KTUFCUMIWABKDW-UHFFFAOYSA-N oxo(oxolanthaniooxy)lanthanum Chemical compound O=[La]O[La]=O KTUFCUMIWABKDW-UHFFFAOYSA-N 0.000 abstract 1
- 238000010671 solid-state reaction Methods 0.000 abstract 1
- 230000008020 evaporation Effects 0.000 description 15
- 238000000576 coating method Methods 0.000 description 6
- 238000005566 electron beam evaporation Methods 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- 230000003667 anti-reflective effect Effects 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000000280 densification Methods 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 230000009931 harmful effect Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000011236 particulate material Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
Images
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- Surface Treatment Of Optical Elements (AREA)
- Laminated Bodies (AREA)
- Physical Vapour Deposition (AREA)
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Priority Applications (1)
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CN2008102225023A CN101363920B (zh) | 2008-09-18 | 2008-09-18 | 中折射率光学薄膜用蒸发材料及制备方法 |
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CN2008102225023A CN101363920B (zh) | 2008-09-18 | 2008-09-18 | 中折射率光学薄膜用蒸发材料及制备方法 |
Publications (2)
Publication Number | Publication Date |
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CN101363920A CN101363920A (zh) | 2009-02-11 |
CN101363920B true CN101363920B (zh) | 2010-06-02 |
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CN2008102225023A Active CN101363920B (zh) | 2008-09-18 | 2008-09-18 | 中折射率光学薄膜用蒸发材料及制备方法 |
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Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104557039B (zh) * | 2014-12-24 | 2017-04-19 | 福建阿石创新材料股份有限公司 | 中折射率蒸发镀膜材料及其制备工艺和应用 |
CN110922166A (zh) * | 2019-11-08 | 2020-03-27 | 安徽大学 | 一种高耐腐蚀性复合材料及其制备方法 |
CN116282950B (zh) * | 2023-03-17 | 2024-11-22 | 有研资源环境技术研究院(北京)有限公司 | 一种多元光学镀膜材料、制备方法及其应用 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1083543A (zh) * | 1992-06-17 | 1994-03-09 | 默克专利股份有限公司 | 用于生产中折射率光学涂层的蒸镀用材料 |
CN1432823A (zh) * | 2002-01-18 | 2003-07-30 | 富士写真光机株式会社 | 带有阻挡层的光学器件、光学系统以及投影仪装置 |
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2008
- 2008-09-18 CN CN2008102225023A patent/CN101363920B/zh active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1083543A (zh) * | 1992-06-17 | 1994-03-09 | 默克专利股份有限公司 | 用于生产中折射率光学涂层的蒸镀用材料 |
CN1432823A (zh) * | 2002-01-18 | 2003-07-30 | 富士写真光机株式会社 | 带有阻挡层的光学器件、光学系统以及投影仪装置 |
Non-Patent Citations (2)
Title |
---|
JP特开平10-123302A 1998.05.15 |
说明书第0016-0018段、附图1. |
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CN101363920A (zh) | 2009-02-11 |
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Effective date of registration: 20190408 Address after: 101407 No. 11 Xingke East Street, Yanqi Economic Development Zone, Huairou District, Beijing Patentee after: Research Institute of engineering and Technology Co., Ltd. Address before: No. 2, Xinjie street, Xicheng District, Beijing, Beijing Patentee before: General Research Institute for Nonferrous Metals |
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Effective date of registration: 20210414 Address after: 101407 No. 11 Xingke East Street, Yanqi Economic Development Zone, Huairou District, Beijing Patentee after: Youyan resources and Environment Technology Research Institute (Beijing) Co.,Ltd. Address before: 101407 No. 11 Xingke East Street, Yanqi Economic Development Zone, Huairou District, Beijing Patentee before: YOUYAN ENGINEERING TECHNOLOGY RESEARCH INSTITUTE Co.,Ltd. |