CN101315330A - 表面等离子体共振成像金膜点微阵列的制备方法 - Google Patents
表面等离子体共振成像金膜点微阵列的制备方法 Download PDFInfo
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- CN101315330A CN101315330A CN 200810050885 CN200810050885A CN101315330A CN 101315330 A CN101315330 A CN 101315330A CN 200810050885 CN200810050885 CN 200810050885 CN 200810050885 A CN200810050885 A CN 200810050885A CN 101315330 A CN101315330 A CN 101315330A
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- 229910052737 gold Inorganic materials 0.000 title claims abstract description 69
- 239000010931 gold Substances 0.000 title claims abstract description 69
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 title claims abstract description 67
- 238000002493 microarray Methods 0.000 title claims abstract description 48
- 238000003384 imaging method Methods 0.000 title claims abstract description 28
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000011521 glass Substances 0.000 claims abstract description 39
- 239000002245 particle Substances 0.000 claims abstract description 23
- 238000000034 method Methods 0.000 claims abstract description 21
- 238000001259 photo etching Methods 0.000 claims abstract description 9
- 238000007772 electroless plating Methods 0.000 claims abstract description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 22
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims description 21
- 239000000243 solution Substances 0.000 claims description 19
- 238000002360 preparation method Methods 0.000 claims description 16
- 239000002105 nanoparticle Substances 0.000 claims description 14
- 238000007747 plating Methods 0.000 claims description 14
- 229910052757 nitrogen Inorganic materials 0.000 claims description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 9
- 230000003287 optical effect Effects 0.000 claims description 8
- 230000004048 modification Effects 0.000 claims description 7
- 238000012986 modification Methods 0.000 claims description 7
- 229920002120 photoresistant polymer Polymers 0.000 claims description 7
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 6
- 238000011010 flushing procedure Methods 0.000 claims description 6
- 239000004568 cement Substances 0.000 claims description 4
- 239000011259 mixed solution Substances 0.000 claims description 4
- 230000032683 aging Effects 0.000 claims description 3
- 230000001105 regulatory effect Effects 0.000 claims description 3
- 239000003513 alkali Substances 0.000 claims description 2
- 238000003486 chemical etching Methods 0.000 claims description 2
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 claims description 2
- 238000002791 soaking Methods 0.000 claims description 2
- 239000002356 single layer Substances 0.000 abstract 2
- SJECZPVISLOESU-UHFFFAOYSA-N 3-trimethoxysilylpropan-1-amine Chemical compound CO[Si](OC)(OC)CCCN SJECZPVISLOESU-UHFFFAOYSA-N 0.000 abstract 1
- 230000003197 catalytic effect Effects 0.000 abstract 1
- 239000000523 sample Substances 0.000 description 6
- HEMHJVSKTPXQMS-UHFFFAOYSA-M sodium hydroxide Inorganic materials [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 5
- 239000007864 aqueous solution Substances 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000012010 growth Effects 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 239000006210 lotion Substances 0.000 description 2
- NICDRCVJGXLKSF-UHFFFAOYSA-N nitric acid;trihydrochloride Chemical compound Cl.Cl.Cl.O[N+]([O-])=O NICDRCVJGXLKSF-UHFFFAOYSA-N 0.000 description 2
- 239000001509 sodium citrate Substances 0.000 description 2
- NLJMYIDDQXHKNR-UHFFFAOYSA-K sodium citrate Chemical compound O.O.[Na+].[Na+].[Na+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O NLJMYIDDQXHKNR-UHFFFAOYSA-K 0.000 description 2
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- 238000000018 DNA microarray Methods 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000003491 array Methods 0.000 description 1
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- 125000003636 chemical group Chemical group 0.000 description 1
- 238000007385 chemical modification Methods 0.000 description 1
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- KRVSOGSZCMJSLX-UHFFFAOYSA-L chromic acid Substances O[Cr](O)(=O)=O KRVSOGSZCMJSLX-UHFFFAOYSA-L 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 239000004205 dimethyl polysiloxane Substances 0.000 description 1
- 235000013870 dimethyl polysiloxane Nutrition 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- AWJWCTOOIBYHON-UHFFFAOYSA-N furo[3,4-b]pyrazine-5,7-dione Chemical compound C1=CN=C2C(=O)OC(=O)C2=N1 AWJWCTOOIBYHON-UHFFFAOYSA-N 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 238000010191 image analysis Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- CXQXSVUQTKDNFP-UHFFFAOYSA-N octamethyltrisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)O[Si](C)(C)C CXQXSVUQTKDNFP-UHFFFAOYSA-N 0.000 description 1
- 230000002165 photosensitisation Effects 0.000 description 1
- 239000003504 photosensitizing agent Substances 0.000 description 1
- 238000004987 plasma desorption mass spectroscopy Methods 0.000 description 1
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 1
- 239000002094 self assembled monolayer Substances 0.000 description 1
- 239000013545 self-assembled monolayer Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 239000003643 water by type Substances 0.000 description 1
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- Surface Treatment Of Glass (AREA)
Abstract
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CN 200810050885 CN101315330B (zh) | 2008-06-26 | 2008-06-26 | 表面等离子体共振成像金膜点微阵列的制备方法 |
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CN 200810050885 CN101315330B (zh) | 2008-06-26 | 2008-06-26 | 表面等离子体共振成像金膜点微阵列的制备方法 |
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CN101315330A true CN101315330A (zh) | 2008-12-03 |
CN101315330B CN101315330B (zh) | 2010-12-08 |
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Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101774535A (zh) * | 2009-12-28 | 2010-07-14 | 厦门大学 | 一种二维正方点阵排列的准正方形纳米颗粒阵列结构的制备方法 |
CN103512861A (zh) * | 2012-06-20 | 2014-01-15 | 中国科学院电子学研究所 | 表面等离子体谐振图像检测芯片、系统及其使用方法 |
CN104198441A (zh) * | 2014-09-09 | 2014-12-10 | 吉林大学 | 一种限域型表面等离子体共振传感器、制备方法及其应用 |
CN104568850A (zh) * | 2014-12-25 | 2015-04-29 | 中北大学 | 一种利用表面等离子芯片的计算芯片成像生物传感平台 |
CN104568848A (zh) * | 2014-12-25 | 2015-04-29 | 中北大学 | 一种用于生物传感器的表面等离子芯片及其制备方法 |
CN110152473A (zh) * | 2019-06-10 | 2019-08-23 | 东北大学 | 一种金纳米负载三聚硫氰酸盐吸收剂及其制备方法 |
CN110702642A (zh) * | 2019-10-29 | 2020-01-17 | 西南大学 | 一种微井结构SPRi芯片的制备方法及其产品和应用 |
CN111721886A (zh) * | 2020-07-09 | 2020-09-29 | 福州大学 | 一种刺激润湿响应性铜离子检测毛细管及其应用 |
CN111766222A (zh) * | 2020-07-24 | 2020-10-13 | 江苏致微光电技术有限责任公司 | 一种基于柔性基底的lspr传感器及其制备方法和应用 |
-
2008
- 2008-06-26 CN CN 200810050885 patent/CN101315330B/zh not_active Expired - Fee Related
Cited By (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101774535B (zh) * | 2009-12-28 | 2014-11-26 | 厦门大学 | 一种二维正方点阵排列的准正方形纳米颗粒阵列结构的制备方法 |
CN101774535A (zh) * | 2009-12-28 | 2010-07-14 | 厦门大学 | 一种二维正方点阵排列的准正方形纳米颗粒阵列结构的制备方法 |
CN103512861A (zh) * | 2012-06-20 | 2014-01-15 | 中国科学院电子学研究所 | 表面等离子体谐振图像检测芯片、系统及其使用方法 |
CN104198441B (zh) * | 2014-09-09 | 2017-01-18 | 吉林大学 | 一种限域型表面等离子体共振传感器、制备方法及其应用 |
CN104198441A (zh) * | 2014-09-09 | 2014-12-10 | 吉林大学 | 一种限域型表面等离子体共振传感器、制备方法及其应用 |
CN104568848B (zh) * | 2014-12-25 | 2018-10-12 | 中北大学 | 一种用于生物传感器的表面等离子芯片及其制备方法 |
CN104568848A (zh) * | 2014-12-25 | 2015-04-29 | 中北大学 | 一种用于生物传感器的表面等离子芯片及其制备方法 |
CN104568850B (zh) * | 2014-12-25 | 2018-06-05 | 中北大学 | 一种利用表面等离子芯片的计算芯片成像生物传感平台 |
CN104568850A (zh) * | 2014-12-25 | 2015-04-29 | 中北大学 | 一种利用表面等离子芯片的计算芯片成像生物传感平台 |
CN110152473A (zh) * | 2019-06-10 | 2019-08-23 | 东北大学 | 一种金纳米负载三聚硫氰酸盐吸收剂及其制备方法 |
CN110152473B (zh) * | 2019-06-10 | 2021-05-28 | 东北大学 | 一种金纳米负载三聚硫氰酸盐吸收剂及其制备方法 |
CN110702642A (zh) * | 2019-10-29 | 2020-01-17 | 西南大学 | 一种微井结构SPRi芯片的制备方法及其产品和应用 |
CN110702642B (zh) * | 2019-10-29 | 2022-03-18 | 西南大学 | 一种微井结构SPRi芯片的制备方法及其产品和应用 |
CN111721886A (zh) * | 2020-07-09 | 2020-09-29 | 福州大学 | 一种刺激润湿响应性铜离子检测毛细管及其应用 |
CN111721886B (zh) * | 2020-07-09 | 2021-07-13 | 福州大学 | 一种刺激润湿响应性铜离子检测毛细管及其应用 |
CN111766222A (zh) * | 2020-07-24 | 2020-10-13 | 江苏致微光电技术有限责任公司 | 一种基于柔性基底的lspr传感器及其制备方法和应用 |
CN111766222B (zh) * | 2020-07-24 | 2022-03-15 | 江苏致微光电技术有限责任公司 | 一种基于柔性基底的lspr传感器及其制备方法和应用 |
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CN101315330B (zh) | 2010-12-08 |
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Owner name: CHANGZHOU INSTITUTE OF ENERGY STORAGE MATERIALS + Free format text: FORMER OWNER: CHANGCHUN INST. OF APPLIED CHEMISTRY, CHINESE ACADEMY OF SCIENCES Effective date: 20130926 |
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Effective date of registration: 20130926 Address after: Changzhou City, Jiangsu province Hehai road 213000 No. 9 Patentee after: CHANGZHOU INSTITUTE OF ENERGY STORAGE MATERIALS & DEVICES Address before: 130022 Changchun people's street, Jilin, No. 5625 Patentee before: CHANGCHUN INSTITUTE OF APPLIED CHEMISTRY CHINESE ACADEMY OF SCIENCES |
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