CN101303390A - Method for judging MOS device performance degeneration - Google Patents
Method for judging MOS device performance degeneration Download PDFInfo
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Abstract
The invention provides a method for judging the performance degradation of a MOS device, which comprises the following steps: 1. decline amplitude value of electrical parameters of different voltage loading time of the MOS device is measured, 2. the power exponential function which can describe the change with time of the interface state between silicon and silicon oxide and the logarithmic function which can describe the change with time of injected charge in silicon oxide and the sum of constant term are adopted as predicate to imitate the change law of decline amplitude value of electrical parameters, 3 the coefficient of the power exponential function and specific value of the exponent of the step 2 and specific value of the coefficient of the changing function describing the injected charger in silicon oxide and the specific value of constant term are obtained, 4. the decline amount of the electrical parameters of the measured MOS device with time according to a specific predicate, wherein, the function describing the change of injecting charger in the silicon oxide is a logarithmic function of time. The method of the invention can effectively improve the accuracy and stability of the judging result of the decline amplitude of the electrical-parameter of the MOS device performance.
Description
Technical field
The present invention relates to MOS device detection field, relate in particular to a kind of method of the MOS of judgement device performance degeneration.
Background technology
Along with development of integrated circuits, the characteristic dimension of MOS device is also constantly reducing, and has now narrowed down to sub-micron and deep-submicron, and develops to sub-micro.But in MOS device size scaled down, MOS device operating voltage not thereupon equal proportion reduce, make that the formation probability of metal-oxide-semiconductor channel hot carrier (hot-carrier injection:HCI) increases greatly in the MOS device, and in silicon and silicon dioxide interface generation interface state, or captured by the charge trap in the grid oxic horizon, cause the MOS device, as threshold voltage (V
Th), maximum transconductance (G
Mmax) and linear zone leakage current (I
Dlin) and saturation region leakage current (I
Dsat) degeneration increase.The damage that HCI causes is the important factor in order that the MOS device reliability lost efficacy, and also is the major reason that causes each electrical parameter degeneration of MOS device performance.The process of deterioration is most important in time accurately to judge the MOS device performance, and it has influence on the reliability and the mission life of integrated circuit.The method of judging the MOS device performance degeneration at present mainly is earlier according to the JEDEC standard, degeneration amplitude at the MOS device performance electrical parameter tested under the load time of the different voltage of record under the identical on-load voltage, the time dependent power exponential function match of Hu model silicon/silicon dioxide interface attitude of adopting the positive penetrating judgment of Hu of University of California Berkeley to award then, obtain calculating the time dependent concrete calculating formula of MOS device electrical parameter decline amplitude, so just can judge the MOS device performance degeneration of being tested according to concrete calculating formula.
Yet in concrete test, quicken the time lengthening of device deterioration along with voltage, the degeneration amplitude of device performance can tend to saturated trend, and so simple employing silicon/silicon dioxide interface attitude time dependent power exponential function match MOS device performance deterioration law in time exists fitting precision not high.Improve precision though can carry out match by sampling long data point of accelerated test later stage, but different staff can select the feasible so concrete calculating formula difference that finally obtains of different test data point for use, thereby has increased the uncertainty of last judged result.
Summary of the invention
The object of the present invention is to provide a kind of method of the MOS of judgement device performance degeneration, judge and to have the not high problem of fitting precision in the MOS device performance degeneration method and serve as to improve the judged result uncertain problem that fitting precision causes to solve tradition.
For achieving the above object, a kind of method of judging the MOS device performance degeneration of the present invention, this MOS device is made based on silicon and earth silicon material, it may further comprise the steps: step 1: based on the JEDEC standard, and the decline range value of the different voltages of test MOS device MOS device performance electrical parameter under the load time; Step 2: adopt to describe between silicon and the monox the time dependent power exponential function of interface state with describe iunjected charge in monox time dependent logarithmic function and constant term sum as judging that formula match step 1 records the decline range value change with time of MOS device performance electrical parameter; Step 3: determine the coefficient of power exponential function in the described judgement formula and the concrete numerical value of index and describe iunjected charge in monox, to change the occurrence of coefficient of function and the occurrence of constant term; Step 4: draw the time dependent decline amount of electrical parameter that the time dependent concrete judgement formula of MOS device performance electrical parameter decline amplitude of test is judged the MOS device performance according to step 3.Particularly, describe iunjected charge time dependent function in monox in the step 2 and adopt the natural logarithm function representation of time.MOS device performance electrical parameter comprises saturation current, linear leakage current and the maximum transconductance of MOS device.
Compare with the method for existing judgement MOS device performance degeneration, the method of judgement MOS device performance degeneration of the present invention, by adopt to describe the time dependent power exponential function of interface state between silicon and the monox and describe the decline range value change with time that iunjected charge time dependent function and constant term sum match step 1 in monox record MOS device performance electrical parameter, make the judgement formula decline range value change with time of accurate description electrical parameter more in the traditional relatively determination methods of the electrical parameter decline time dependent judgement formula of amplitude, thereby improved the precision and the accuracy thereof of judged result.
Description of drawings
Below in conjunction with the drawings and specific embodiments the method for judgement MOS device performance degeneration of the present invention is done further to describe in detail particularly.
Fig. 1 is that tradition is judged the MOS device drain saturation current method synoptic diagram of degenerating in time.
Fig. 2 is that the present invention judges the MOS device drain saturation current method synoptic diagram of degenerating in time.
Fig. 3 is that tradition is judged the MOS device linear leakage current method synoptic diagram of degenerating in time.
Fig. 4 is that the present invention judges the MOS device linear leakage current method synoptic diagram of degenerating in time.
Fig. 5 is that tradition is judged the MOS device maximum transconductance method synoptic diagram of degenerating in time.
Fig. 6 is that the present invention judges the MOS device maximum transconductance method synoptic diagram of degenerating in time.
Embodiment
The method of judgement MOS device performance degeneration of the present invention, at first carry out step 1: based on the JEDEC standard, the decline range value of the different voltages of test MOS device MOS device performance electrical parameter under the load time.Based on the hot carrier injection into test method, the drain terminal on-load voltage is V
Dd* (1+10%), the voltage that grid load is the gate voltage under the substrate current maximum case, the equal ground connection of source and substrate.Test interval is 10s, 20s, 50s, 100s, 200s, 500s, 1000s, 2000s, 5000s, according to time interval test MOS device performance electrical parameter as mentioned above, so just can record the electrical parameter value institute decline scope that the MOS device electrical parameter value that at every turn measures relatively initially records.The electrical parameter of the MOS device of testing in the present embodiment is drain terminal saturation current I
DsatStep 2: adopt to describe the time dependent power exponential function of interface state between silicon and the monox and describe the decline range value change with time that iunjected charge time dependent function and constant term sum match step 1 in monox record MOS device performance electrical parameter.Particularly, describe iunjected charge time dependent function in monox in the step 2 and adopt the natural logarithm function representation of time.The judgement formula of the decline range value change with time of match MOS device performance electrical parameter is following formula in the step 2 like this:
Wherein, P
tBe the MOS device electrical parameter value that t records constantly, the MOS device electrical parameter value of P for initially recording, the electrical parameter of P representative comprises the saturation region leakage current I of MOS device
Dsat, linear zone leakage current I
DlinWith maximum transconductance G
MmaxA is the coefficient of power exponential function, and n is the index of power exponential function, and B is the coefficient of natural logarithm function, and C is a constant term.Step 3: the electrical parameter decline amplitude data that records according to step 1, utilize judgement formula (1) to fit, determine the coefficient A of power exponential function and the concrete numerical value n of index and describe iunjected charge in monox, to change the occurrence B of coefficient of function and the occurrence of constant term C; Step 4: the formula that embodies that draws the MOS device performance electrical parameter decline time dependent concrete judgement formula of amplitude (1) of test according to step 3 is judged the time dependent decline amount of electrical parameter of MOS device performance.So just can estimate under the certain hour decline amount of MOS device electrical parameter.
With MOS device electrical parameter saturation region leakage current I
DsatBe example, adopt tradition to judge MOS device performance degeneration method, fit MOS device saturation region I
DsatThe curve of the judgement formula of deterioration law sees also curve among Fig. 1.Equally with MOS device electrical parameter saturation region leakage current I
DsatBe example, judgement MOS device degradation method of the present invention, match MOS device saturation region leakage current I
DsatThe curve of the judgement formula of deterioration law sees also curve among Fig. 2.Circle is depicted as and tests out MOS device electrical parameter saturation region leakage current I among Fig. 1 and Fig. 2
DsatThe decline amplitude data adopts numerical computation method commonly used or numerical evaluation software to determine to judge in traditional determination methods that coefficient, the exponential sum determination methods of the present invention of the formula that embodies of formula curve is used for judging the every coefficient of the formula that embodies, index and the constant of the judgement formula curve of MOS device electrical parameter saturation region leakage current decline amplitude.The tradition determination methods simulates curve among Fig. 1 and embodies formula and be:
And adopt the present invention to judge that MOS device performance degeneration method simulates that the formula that embodies of curve is among Fig. 2:
Comparison diagram 1 and Fig. 2, can find out adopt embody formula (3) to the degree of fitting of test data apparently higher than embodying formula (2), better match the MOS device performance with hot carrier injection efficiency degradation trend.Adopt judgement formula (1) that the electrical parameter decline amplitude of test MOS device is carried out the result that match degree of accuracy and accuracy are carried out match apparently higher than tradition judgement formula.In like manner, to the judgement of other MOS device electrical parameter, for example the judgement of linear leakage current and maximum transconductance degeneration can adopt identical judgement MOS device performance degeneration method to judge.P replaces to the MOS device electrical parameter occurrence of test, P in the judgement formula (1)
tReplacing to the electrical parameter occurrence that the MOS device t that tested tests constantly gets final product.
Comparison diagram 3 and Fig. 4, the MOS device electrical parameter linear leakage current I that Fig. 3 and the representative of Fig. 4 circle test out
DlinData, Fig. 3 is according to the linear leakage current I of traditional determination methods to testing out
DlinThe decline amplitude data is carried out match, and Fig. 4 adopts judgement MOS device performance degeneration method of the present invention according to linear leakage current I
DlinThe data judgement formula (1) is carried out match.Comparison diagram 3 can find out obviously that with Fig. 4 the relative traditional determination methods of determination methods of the present invention is at judgement linear leakage current I
DlinThe trend of decline changes in amplitude is more accurate.Comparison diagram 4 and Fig. 5, the electrical parameter maximum transconductance G that the circle representative tests out among Fig. 4 and Fig. 5
mThe decline amplitude data, Fig. 4 and Fig. 5 adopt traditional determination methods and determination methods of the present invention to judge the MOS device electrical parameter maximum transconductance G that is tested
mDecline changes in amplitude trend is judged formula curve fitting maximum transconductance G from comparison diagram 4 and Fig. 5
MmaxDecline amplitude data result can find out that determination methods of the present invention is judged maximum transconductance G
MmaxDecline changes in amplitude trend is more accurate.The occurrence of judging every coefficient of formula curve and constant term among Fig. 3 and Fig. 4 can draw by numerical computation method commonly used or numerical evaluation software is finished, therefore specifically do not enumerate every coefficient, index and constant term occurrence at this, in like manner Fig. 5 and Fig. 6 judge that every coefficient, index and the constant term occurrence of formula also can adopt numerical computation method commonly used to determine or numerical evaluation software is finished, and therefore specifically do not enumerate every coefficient, index and constant term occurrence at this.
Comparing result by Fig. 1 and 2, the comparing result of the comparing result of Fig. 3 and Fig. 4 and Fig. 5 and Fig. 6 can find out obviously that judgement MOS device performance degeneration method of the present invention is at judgement MOS device electrical parameter, saturation region leakage current for example, when linear leakage current or maximum transconductance, can judge the decline changes in amplitude trend of electrical parameter more accurately, improve the accuracy and the stability of judged result.Therefore, when the formula that embodies of utilizing judgement formula (1) is done to judge to the time dependent rule of the electrical parameter of MOS device of test, have higher accuracy and accuracy, can effectively solve tradition and judge and have the not high problem of fitting precision in the MOS device performance degeneration method and for improving the judged result uncertain problem that fitting precision causes.
Claims (3)
1, a kind of method of judging the MOS device performance degeneration, described MOS device is made based on silicon and earth silicon material, it is characterized in that it may further comprise the steps:
Step 1: based on the JEDEC standard, the decline range value of the different voltages of test MOS device MOS device performance electrical parameter under the load time;
Step 2: adopt to describe between silicon and the monox the time dependent power exponential function of interface state with describe iunjected charge in monox time dependent function and constant term sum as judging that formula match step 1 records the decline range value change with time of MOS device performance electrical parameter;
Step 3: the coefficient of power exponential function and the concrete numerical value of index and describe iunjected charge and in monox, change the occurrence of coefficient of function and the occurrence of constant term in the judgement formula described in the determining step 2;
Step 4: the time dependent decline amount of electrical parameter that the time dependent concrete judgement formula of test MOS device performance electrical parameter decline amplitude that draws according to step 3 is judged the MOS device performance.
2, judge the method for MOS device performance degeneration according to claim 1, it is characterized in that, describe iunjected charge time dependent function in monox in the described step 2 and adopt the natural logarithm function representation of time.
3, judge the method for MOS device performance degeneration according to claim 1, it is characterized in that described MOS device performance electrical parameter comprises saturation region leakage current, linear zone leakage current and the maximum transconductance of MOS device.
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Cited By (7)
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| CN106533406A (en) * | 2016-11-10 | 2017-03-22 | 中国电子产品可靠性与环境试验研究所 | MOS tube parameter degradation circuit, test circuit and early warning circuit |
| CN107144775A (en) * | 2017-05-22 | 2017-09-08 | 西安电子科技大学 | A kind of measurement apparatus and method of CMOS inverter mutual conductance coefficient |
| CN109655691A (en) * | 2018-12-25 | 2019-04-19 | 中国电子产品可靠性与环境试验研究所（（工业和信息化部电子第五研究所）（中国赛宝实验室）） | Power device degeneration monitoring method, device and system in board-level circuit |
| CN110057406A (en) * | 2019-05-22 | 2019-07-26 | 西安因联信息科技有限公司 | A kind of mechanical equipment trending early warning method of multi-scale self-adaptive |
| CN110208684A (en) * | 2019-07-08 | 2019-09-06 | 西安太乙电子有限公司 | A kind of lifetime estimation method in CMOS type integrated circuit life extension test |
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| CN112444733A (en) * | 2020-11-10 | 2021-03-05 | 海光信息技术股份有限公司 | Chip aging state detection method and device |
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| US6198301B1 (en) * | 1998-07-23 | 2001-03-06 | Lucent Technologies Inc. | Method for determining the hot carrier lifetime of a transistor |
| US6269315B1 (en) * | 1999-01-14 | 2001-07-31 | United Microelectronics Corp. | Reliability testing method of dielectric thin film |
| US6963215B1 (en) * | 2004-07-26 | 2005-11-08 | Agere Systems Inc. | Operation of semiconductor devices subject to hot carrier injection |
| CN1588104A (en) * | 2004-08-19 | 2005-03-02 | 信息产业部电子第五研究所 | MOS device hot carrier injection effect measuring method |
| CN101089642B (en) * | 2006-06-13 | 2012-08-22 | 中芯国际集成电路制造(上海)有限公司 | Method of accelerating hot carrier injection investigating |
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| CN106533406A (en) * | 2016-11-10 | 2017-03-22 | 中国电子产品可靠性与环境试验研究所 | MOS tube parameter degradation circuit, test circuit and early warning circuit |
| CN106533406B (en) * | 2016-11-10 | 2019-06-07 | 中国电子产品可靠性与环境试验研究所 | Metal-oxide-semiconductor parameter degradation circuit, test circuit and early warning circuit |
| CN107144775A (en) * | 2017-05-22 | 2017-09-08 | 西安电子科技大学 | A kind of measurement apparatus and method of CMOS inverter mutual conductance coefficient |
| CN107144775B (en) * | 2017-05-22 | 2020-02-21 | 西安电子科技大学 | Device and method for measuring transconductance coefficient of CMOS inverter |
| CN109655691A (en) * | 2018-12-25 | 2019-04-19 | 中国电子产品可靠性与环境试验研究所（（工业和信息化部电子第五研究所）（中国赛宝实验室）） | Power device degeneration monitoring method, device and system in board-level circuit |
| CN109655691B (en) * | 2018-12-25 | 2021-01-22 | 中国电子产品可靠性与环境试验研究所（（工业和信息化部电子第五研究所）（中国赛宝实验室）） | Method, device and system for monitoring degradation of power device in board-level circuit |
| CN110057406A (en) * | 2019-05-22 | 2019-07-26 | 西安因联信息科技有限公司 | A kind of mechanical equipment trending early warning method of multi-scale self-adaptive |
| CN110057406B (en) * | 2019-05-22 | 2022-05-17 | 西安因联信息科技有限公司 | Multi-scale self-adaptive mechanical equipment trend early warning method |
| CN110208684A (en) * | 2019-07-08 | 2019-09-06 | 西安太乙电子有限公司 | A kind of lifetime estimation method in CMOS type integrated circuit life extension test |
| CN110208684B (en) * | 2019-07-08 | 2021-04-06 | 西安太乙电子有限公司 | Life evaluation method for CMOS integrated circuit life prolonging test |
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