CN106533406B - Metal-oxide-semiconductor parameter degradation circuit, test circuit and early warning circuit - Google Patents
Metal-oxide-semiconductor parameter degradation circuit, test circuit and early warning circuit Download PDFInfo
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- CN106533406B CN106533406B CN201610989542.5A CN201610989542A CN106533406B CN 106533406 B CN106533406 B CN 106533406B CN 201610989542 A CN201610989542 A CN 201610989542A CN 106533406 B CN106533406 B CN 106533406B
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
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- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/16—Modifications for eliminating interference voltages or currents
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- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
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- G01R31/2621—Circuits therefor for testing field effect transistors, i.e. FET's
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Abstract
The present invention relates to a kind of metal-oxide-semiconductor parameter degradation circuits, including NMOS tube and PMOS tube；The grid of NMOS tube and the grid of PMOS tube connect, and the drain electrode of NMOS tube and the drain electrode of PMOS tube connect；The grid of PMOS tube connects power supply；The source electrode of NMOS tube receives control signal；When control signal is high level signal, the channel of NMOS tube generates hot carrier；The grid of NMOS tube and the grid of PMOS tube receive input signal, the output signal of the drain electrode output and the input signal reverse phase of the drain electrode and PMOS tube of NMOS tube.The accuracy of output signal can be improved in above-mentioned metal-oxide-semiconductor parameter degradation circuit.Test result accuracy can be improved the invention further relates to a kind of metal-oxide-semiconductor parameter degradation test circuit, another metal-oxide-semiconductor parameter degradation test circuit that test result accuracy can be improved, it is a kind of can accurate early warning metal-oxide-semiconductor parameter degradation early warning circuit and it is another can accurate early warning metal-oxide-semiconductor parameter degradation early warning circuit.
Description
Technical field
The present invention relates to monitoring technical fields, more particularly to a kind of metal-oxide-semiconductor parameter degradation circuit, a kind of metal-oxide-semiconductor parameter
Degradation testing circuit, another metal-oxide-semiconductor parameter degradation test circuit, a kind of metal-oxide-semiconductor parameter degradation early warning circuit and another kind
Metal-oxide-semiconductor parameter degradation early warning circuit.
Background technique
As super large-scale integration manufacturing technology develops to nanometer direction, each device size of integrated circuit subtracts therewith
It is small, correspondingly, metal-oxide-semiconductor (metal oxide semiconductor, metal-oxide-half as each device main element
Conductor field effect transistor), characteristic size is also smaller and smaller, however the normal working voltage of metal-oxide-semiconductor does not wait ratios therewith
Example reduces, and it is increasing will so to will lead to the internal field inside metal-oxide-semiconductor channel.With internal field inside metal-oxide-semiconductor channel
Increase, the carrier in channel is easy to get biggish energy in strong electrical field to form hot carrier.Since heat carries
The energy for flowing son is higher, and is present in channel again, and therefore, which, which is easy to pass through interface potential barrier, is injected into grid oxygen
Change layer, finally interfacial state is generated by the charge trap capture in gate oxide or at the interface Si-SiO2, so as to cause metal-oxide-semiconductor
Related parameter (such as threshold voltage, mutual conductance and saturation region drain current) changes, that is, forms so-called hot carrier note
Enter (Hot Carriers Injection, HCI) effect.
As described above, HCI effect can cause metal-oxide-semiconductor in relation to the variation of parameter, particularly, when because of gate oxide stored charge
When threshold voltage and transconductance degradation being caused to be more than a threshold value, it will metal-oxide-semiconductor is caused to fail.Therefore, hot carrier injection effect
An important factor for being influence metal-oxide-semiconductor performance parameter, while being also to lead to one of higher failure mechanism of component failure rate.
At this stage, in metal-oxide-semiconductor parameter degradation circuit caused by HCI effect, due to will receive HCI effect when circuit work
It answers, NBTI (Negative Bias Temperature Instability, Negative Bias Temperature Instability) effect and TDDB
The shadow of many factors such as (time dependent dielectric breakdown, with time correlation dielectric breakdown) effect
It rings, therefore the output signal of above-mentioned metal-oxide-semiconductor parameter degradation circuit will receive the influence of a variety of effects, make the accuracy of output signal
It reduces.And when the output signal to metal-oxide-semiconductor parameter degradation circuit is tested, test result will not be accurate, thus nothing
Method carries out accurate early warning to the failure of metal-oxide-semiconductor caused by HCI effect.
Summary of the invention
Based on this, it is necessary in view of the above-mentioned problems, provide a kind of metal-oxide-semiconductor parameter degradation circuit, by make the circuit only by
HCI effects, so as to improve the accuracy of output signal.
A kind of metal-oxide-semiconductor parameter degradation circuit, comprising: NMOS tube and PMOS tube；
The grid of the NMOS tube is connect with the grid of the PMOS tube, drain electrode and the PMOS tube of the NMOS tube
Drain electrode connection；The grid of the PMOS tube connects power supply；
The source electrode of the NMOS tube receives control signal, and the control signal uses level signal；
When the control signal is high level signal, the channel of the NMOS tube generates hot carrier；
Wherein, interfacial state is generated during the hot carrier in jection to gate oxide and oxide layer subsides charge, from
And the damage of oxide layer is caused, so that the device parameters of NMOS tube is degenerated；
The grid of the grid of the NMOS tube and the PMOS tube receives input signal, the drain electrode of the NMOS tube with it is described
The output signal of the drain electrode output and the input signal reverse phase of PMOS tube；The NMOS tube and the PMOS tube connect into reverse phase
Device；
When the input signal is low level signal, the PMOS tube conducting, the NMOS tube cut-off, the output signal
For high level signal；When the input signal is high level signal, the PMOS tube is ended, and the NMOS transistor conduction is described defeated
Signal is low level signal out.
Above-mentioned metal-oxide-semiconductor parameter degradation circuit, by making the NMOS tube and the PMOS tube connect into the phase inverter,
And the source electrode of the NMOS tube is made to receive high level signal, in this way, the NMOS tube in the phase inverter can be made only by HCI
Effects, and the PMOS tube is not by HCI effects.
Under the control of the high level signal, internal field increases inside the channel of the NMOS tube, so that described
Hot carrier is generated in the channel of NMOS tube, the hot carrier can be injected into gate oxide, arrive in the hot carrier in jection
Interfacial state is generated during gate oxide and oxide layer subsides charge, to cause the damage of oxide layer, makes the device of NMOS tube
Part parameter degradation；Since the NMOS tube device parameters of phase inverter are degenerated, it is connected by the NMOS tube and the PMOS tube
The phase inverter, output signal only will receive the influence of HCI effect, the accuracy of the output signal can be improved.
In addition, further relating to a kind of metal-oxide-semiconductor parameter degradation test circuit.
A kind of metal-oxide-semiconductor parameter degradation test circuit, comprising: parameter measurement circuit and above-mentioned metal-oxide-semiconductor parameter degradation circuit；
The input terminal of the metal-oxide-semiconductor parameter degradation circuit is that the grid of the NMOS tube is connect with the grid of the PMOS tube
It is formed, the output end of the metal-oxide-semiconductor parameter degradation circuit is that the drain electrode of the NMOS tube connect shape with the drain electrode of the PMOS tube
At；
The input terminal of the metal-oxide-semiconductor parameter degradation circuit is connect with output end, the input terminal of the parameter measurement circuit with
The output end of the metal-oxide-semiconductor parameter degradation circuit connects；
The source electrode of the NMOS tube receives the high level signal, and the device parameters of the NMOS tube are degenerated；
The input terminal of the metal-oxide-semiconductor parameter degradation circuit receives the input signal, the metal-oxide-semiconductor parameter degradation circuit
Output end exports oscillator signal；The input terminal of the parameter measurement circuit receives the oscillator signal, and measures the concussion letter
Number frequency, MOS transistor device parameter can be calculated according to the change rate of the frequency of the oscillator signal and reference frequency ratio
Degree of degeneration；
Wherein, the oscillator signal frequency when reference frequency is not degenerated for the device parameters of the NMOS tube.
Above-mentioned metal-oxide-semiconductor parameter degradation test circuit makes the metal-oxide-semiconductor due to using the metal-oxide-semiconductor parameter degradation circuit
The input terminal of parameter degradation circuit is connect with output end, therefore can make the parameter measurement circuit test object, i.e., the described MOS
The accuracy of the oscillator signal of pipe parameter degradation circuit output, so as to so that the parameter measurement circuit to the concussion
The oscillator signal frequency obtained after signal testing can only influence of the reaction HCI effect to MOS transistor device parameter, and by by institute
Oscillator signal frequency is stated compared with the reference frequency, accurate MOS transistor device parameter degradation degree can be obtained, to improve
State the accuracy of the test result of metal-oxide-semiconductor parameter degradation test circuit.
Additionally relate to a kind of metal-oxide-semiconductor parameter degradation early warning circuit.
A kind of metal-oxide-semiconductor parameter degradation early warning circuit, comprising: the first metal-oxide-semiconductor parameter degradation circuit, the second metal-oxide-semiconductor parameter are moved back
Change circuit, selector and parameter measurement circuit；The first metal-oxide-semiconductor parameter degradation circuit uses the metal-oxide-semiconductor parameter degradation
Circuit, the second metal-oxide-semiconductor parameter degradation circuit use the metal-oxide-semiconductor parameter degradation circuit；
The grid of the NMOS tube and the grid of the PMOS tube in first metal-oxide-semiconductor parameter degradation circuit connect into described
The input terminal of first metal-oxide-semiconductor parameter degradation circuit, the drain electrode of the NMOS tube in the first metal-oxide-semiconductor parameter degradation circuit with it is described
The drain electrode of PMOS tube connects into the output end of the first metal-oxide-semiconductor parameter degradation circuit；The first metal-oxide-semiconductor parameter degradation circuit
Input terminal connect with output end；
The grid of the NMOS tube and the grid of the PMOS tube in second metal-oxide-semiconductor parameter degradation circuit connect into described
The input terminal of second metal-oxide-semiconductor parameter degradation circuit, the drain electrode of the NMOS tube in the second metal-oxide-semiconductor parameter degradation circuit with it is described
The drain electrode of PMOS tube connects into the output end of the second metal-oxide-semiconductor parameter degradation circuit；The second metal-oxide-semiconductor parameter degradation circuit
Input terminal connect with output end；
The output end of the first metal-oxide-semiconductor parameter degradation circuit is connect with the first input end of the selector, and described
The output end of two metal-oxide-semiconductor parameter degradation circuits is connect with the second input terminal of the selector；The output end of the selector with
The input terminal of the parameter measurement circuit connects；
The source electrode reception high level signal of NMOS tube in the first metal-oxide-semiconductor parameter degradation circuit, described second
The source electrode of NMOS tube in metal-oxide-semiconductor parameter degradation circuit receives the low level signal；The second metal-oxide-semiconductor parameter degradation circuit
For the reference circuit of the first metal-oxide-semiconductor parameter degradation circuit；
The enable end of the selector receives the first enable signal, and the selector connects under the control of the first enable signal
Lead to the first metal-oxide-semiconductor parameter degradation circuit and the parameter measurement circuit；The input of the first metal-oxide-semiconductor parameter degradation circuit
End receives the input signal, and exports the first oscillator signal to the parameter measurement circuit, the parameter measurement circuit measurement
The first oscillator signal frequency；
The enable end of the selector receives the first enable signal, and the selector connects under the control of the first enable signal
Lead to the second metal-oxide-semiconductor parameter degradation circuit and the parameter measurement circuit；The input of the second metal-oxide-semiconductor parameter degradation circuit
End receives the input signal, and exports the second oscillator signal to the parameter measurement circuit, the parameter measurement circuit measurement
The second oscillator signal frequency；
Change rate by calculating the ratio of the first oscillator signal frequency and the second oscillator signal frequency can be with
The degree of degeneration for reacting metal-oxide-semiconductor parameter is issued warning signal when the degree of degeneration of metal-oxide-semiconductor parameter is more than preset value.
Above-mentioned metal-oxide-semiconductor parameter degradation early warning circuit is by being arranged the first metal-oxide-semiconductor parameter degradation circuit and described the
Two metal-oxide-semiconductor parameter degradation circuits, and make the first metal-oxide-semiconductor parameter degradation circuit and the second metal-oxide-semiconductor parameter degradation circuit
It include the identical metal-oxide-semiconductor parameter degradation circuit, and the input terminal and output end of the first metal-oxide-semiconductor parameter degradation circuit
Connection, the input terminal of the second metal-oxide-semiconductor parameter degradation circuit is connect with output end, and the first metal-oxide-semiconductor parameter degradation is electric
The source electrode of the NMOS tube in road receives high level signal, the NMOS tube in the second metal-oxide-semiconductor parameter degradation circuit
Source electrode receive low level signal, in this way, the second oscillator signal parameter of the second metal-oxide-semiconductor parameter degradation circuit can be by
To the influence of HCI effect, and the first oscillator signal parameter of the first metal-oxide-semiconductor parameter degradation circuit not will receive HCI
The influence of effect, thus when selector gates first output end and the second output terminal respectively, the parameter measurement
Circuit can measure the frequency of first oscillator signal Yu second oscillator signal respectively, and by calculating first shake
Swing the ratio of signal frequency and the second oscillator signal frequency change rate can accurate response metal-oxide-semiconductor parameter degeneration journey
Degree issues accurate pre-warning signal when the degree of degeneration of metal-oxide-semiconductor parameter is more than preset value.
In addition, further relating to a kind of metal-oxide-semiconductor parameter degradation test circuit.
A kind of metal-oxide-semiconductor parameter degradation test circuit, comprising: parameter measurement circuit and 2N+1 above-mentioned metal-oxide-semiconductor parameters are moved back
Change circuit, wherein N is positive integer；
The grid of the NMOS tube in each metal-oxide-semiconductor parameter degradation circuit connect shape with the grid of the PMOS tube
At the input terminal of each metal-oxide-semiconductor parameter degradation circuit, the NMOS tube in each metal-oxide-semiconductor parameter degradation circuit
Drain electrode forms the output end of each metal-oxide-semiconductor parameter degradation circuit with the drain electrode connection of the PMOS tube；
The output end of the previous metal-oxide-semiconductor parameter degradation circuit is defeated with next metal-oxide-semiconductor parameter degradation circuit
Enter end connection；The input terminal of the parameter measurement circuit is connect with the output end of metal-oxide-semiconductor parameter degradation circuit described in one of them；
The source electrode of each NMOS tube in the metal-oxide-semiconductor parameter degradation circuit receives the identical high level letter
Number；
The input terminal of one of them metal-oxide-semiconductor parameter degradation circuit receives the input signal, one of them described MOS
The output end of pipe parameter degradation circuit exports oscillator signal, and the input terminal of the parameter measurement circuit receives the oscillator signal,
And measure the oscillator signal frequency；
Moving back for MOS transistor device parameter can be calculated according to the frequency of the oscillator signal and the change rate of reference frequency ratio
Change degree；
Wherein, the oscillator signal frequency when reference frequency is not degenerated for the device parameters of the NMOS tube.
Above-mentioned metal-oxide-semiconductor parameter degradation test circuit makes previous by using the 2N+1 metal-oxide-semiconductor parameter degradation circuits
The output end of metal-oxide-semiconductor parameter degradation circuit described in the output end and the latter of the metal-oxide-semiconductor parameter degradation circuit connects, and makes
The source electrode of the NMOS tube of each metal-oxide-semiconductor parameter degradation circuit receives the identical high level signal, in this way, can
Influence each metal-oxide-semiconductor parameter degradation circuit only by HCI effect, to guarantee the parameter measurement circuit test pair
As the i.e. accuracy of the oscillator signal of one of them metal-oxide-semiconductor parameter degradation circuit output, so that the parameter
The oscillator signal frequency that measuring circuit obtains after testing the oscillator signal can only reaction HCI effect join MOS transistor device
Several influences, and joined by the way that the oscillator signal frequency compared with the reference frequency, can be obtained to accurate MOS transistor device
Number degree of degeneration, to improve the accuracy of the test result of the metal-oxide-semiconductor parameter degradation test circuit.
In addition, further relating to a kind of metal-oxide-semiconductor parameter degradation early warning circuit.
A kind of metal-oxide-semiconductor parameter degradation early warning circuit, comprising: stress annular oscillation circuit, benchmark annular oscillation circuit, selector and parameter
Measuring circuit；The stress annular oscillation circuit and the benchmark annular oscillation circuit include 2N+1 above-mentioned metal-oxide-semiconductor parameter degradation electricity
Road, wherein N is positive integer；
The grid of NMOS tube and the grid of PMOS tube in each metal-oxide-semiconductor parameter degradation circuit connect into each described
The input terminal of metal-oxide-semiconductor parameter degradation circuit, the drain electrode of the NMOS tube in each metal-oxide-semiconductor parameter degradation circuit and PMOS tube
Drain electrode connects into the output end of each metal-oxide-semiconductor parameter degradation circuit；
The output end of the previous metal-oxide-semiconductor parameter degradation circuit in the stress annular oscillation circuit with it is next described
The input terminal of metal-oxide-semiconductor parameter degradation circuit connects；The previous metal-oxide-semiconductor parameter degradation circuit in the benchmark annular oscillation circuit
Output end connect with the input terminal of next metal-oxide-semiconductor parameter degradation circuit；
The output end and the selector of one of them metal-oxide-semiconductor parameter degradation circuit in the stress annular oscillation circuit
First input end connection, the output end of one of them metal-oxide-semiconductor parameter degradation circuit in the benchmark annular oscillation circuit with
Second input terminal of the selector connects, and the output end of the selector is connect with the input terminal of the parameter measurement circuit；
The source electrode of the NMOS tube in each metal-oxide-semiconductor parameter degradation circuit in the stress annular oscillation circuit connects
Receive the identical high level signal；It is described in each metal-oxide-semiconductor parameter degradation circuit in the benchmark annular oscillation circuit
The source electrode of NMOS tube receives the identical low level signal；
The enable end of the selector receives the first enable signal, and the selector connects under the control of the first enable signal
Lead to one of them described metal-oxide-semiconductor parameter degradation circuit in the parameter measurement circuit and the stress annular oscillation circuit；It is described to answer
The input terminal of one of them metal-oxide-semiconductor parameter degradation circuit in power annular oscillation circuit receives the input signal, and exports the
One oscillator signal to the parameter measurement circuit, the parameter measurement circuit measures the first oscillator signal frequency；
The enable end of the selector receives the first enable signal, and the selector connects under the control of the first enable signal
Lead to one of them described metal-oxide-semiconductor parameter degradation circuit in the parameter measurement circuit and the benchmark annular oscillation circuit；The base
The input terminal of one of them metal-oxide-semiconductor parameter degradation circuit in quasi- annular oscillation circuit receives the input signal, and exports the
Two oscillator signals to the parameter measurement circuit, the parameter measurement circuit measures the second oscillator signal frequency；
Change rate by calculating the ratio of the first oscillator signal frequency and the second oscillator signal frequency can be with
The degree of degeneration for reacting metal-oxide-semiconductor parameter is issued warning signal when the degree of degeneration of metal-oxide-semiconductor parameter is more than preset value.
Above-mentioned metal-oxide-semiconductor parameter degradation early warning circuit by the way that the stress circuit and the reference circuit is arranged, and makes institute
It states stress circuit and the reference circuit includes the 2N+1 metal-oxide-semiconductor parameter degradation circuits, and in the stress circuit
The input terminal of metal-oxide-semiconductor parameter degradation circuit described in the output end and the latter of the previous metal-oxide-semiconductor parameter degradation circuit connects,
Metal-oxide-semiconductor parameter degradation described in the output end and the latter of the previous metal-oxide-semiconductor parameter degradation circuit in the reference circuit
The input terminal of circuit connects, and the source of the NMOS tube in the stress circuit in each metal-oxide-semiconductor parameter degradation circuit
Extremely receive identical high level signal, the NMOS in the reference circuit in each metal-oxide-semiconductor parameter degradation circuit
The source electrode of pipe receives identical low level signal, in this way, the second oscillator signal parameter of the reference circuit will receive
The influence of HCI effect, and the first oscillator signal parameter of the stress circuit not will receive the influence of HCI effect, thus
When selector gates first output end and the second output terminal respectively, the parameter measurement circuit can measure respectively
The frequency of first oscillator signal and second oscillator signal, and by calculate the first oscillator signal frequency with it is described
The change rate of the ratio of second oscillator signal frequency can accurate response metal-oxide-semiconductor parameter degree of degeneration, when metal-oxide-semiconductor parameter
When degree of degeneration is more than preset value, accurate pre-warning signal is issued.
Detailed description of the invention
Fig. 1 is metal-oxide-semiconductor parameter degradation electrical block diagram in one embodiment；
Fig. 2 is the simplified structure diagram of metal-oxide-semiconductor parameter degradation circuit in Fig. 1；
Fig. 3 is the structural schematic diagram that metal-oxide-semiconductor parameter degradation tests circuit in one embodiment；
Fig. 4 is that stress annular oscillation circuit or this benchmark annular oscillation circuit contain 5 metal-oxide-semiconductor parameter degradation circuits in one embodiment
Structural schematic diagram；
Fig. 5 is that stress annular oscillation circuit or this benchmark annular oscillation circuit contain 2N+1 metal-oxide-semiconductor parameter degradation in one embodiment
The structural schematic diagram of circuit；
Fig. 6 is the structural schematic diagram of metal-oxide-semiconductor parameter degradation early warning circuit in one embodiment.
Specific embodiment
It is with reference to the accompanying drawing and preferably real for the effect for further illustrating technological means adopted by the present invention and acquirement
Example is applied, to the technical solution of the embodiment of the present invention, carries out clear and complete description.
Referring to Figure 1 and Fig. 2, a kind of metal-oxide-semiconductor parameter degradation circuit, including NMOS tube M1 and PMOS tube M2；The NMOS
The grid of pipe M1 is connect with the grid of the PMOS tube M2, and the drain electrode of the NMOS tube M1 connects with the drain electrode of the PMOS tube M2
It connects；The grid of the PMOS tube M2 meets power vd D；The source electrode of the NMOS tube M1 receives control signal Col, the control signal
Col uses level signal.When the control signal Col is high level signal, the channel of the NMOS tube M1 generates hot current-carrying
Son；Wherein, interfacial state is generated during the hot carrier in jection to gate oxide and oxide layer subsides charge, to cause
The damage of oxide layer makes the device parameters of NMOS tube M1 degenerate；The grid of the grid of the NMOS tube M1 and the PMOS tube M2
Receive input signal In, the drain electrode of the NMOS tube M1 and the drain electrode output of the PMOS tube M2 and the input signal In reverse phase
Output signal Out.The NMOS tube M1 and the PMOS tube M2 connect into phase inverter, i.e., when the input signal In is low electricity
When ordinary mail, the PMOS tube M2 conducting, the NMOS tube M1 cut-off, the output signal Out is high level signal；When described
When input signal In is high level signal, the PMOS tube M2 cut-off, the NMOS tube M1 is connected, and the output signal Out is
Low level signal.
Above-mentioned metal-oxide-semiconductor parameter degradation circuit, it is described anti-by connecting into the NMOS tube M1 and the PMOS tube M2
Phase device.Influence due to HCI effect to NMOS tube M1 is significant, in the circuit, also connects the source electrode of the NMOS tube M1
High level signal is received, so that the MOS transistor device parameter is only by HCI effects.
Specifically, internal field increases inside the channel of the NMOS tube M1 under the control of the high level signal, make
It obtains and generates hot carrier in the channel of the NMOS tube M1, the hot carrier can be injected into gate oxide, in the hot current-carrying
Son generates interfacial state during being injected into gate oxide and oxide layer subsides charge, to cause the damage of oxide layer, makes
The device parameters of NMOS tube M1 are degenerated；Due to phase inverter NMOS tube M1 device parameters degenerate, by the NMOS tube M1 with
The phase inverter that the PMOS tube M2 is connected into, output signal Out only will receive the influence of HCI effect, and institute can be improved
State the accuracy of output signal Out.
In order to allow the control signal Col to be stably transmitted to the source electrode of the NMOS tube M1, in one embodiment
In, it is also additionally arranged buffer, and connect the output end of the buffer and the source electrode of the NMOS tube M1.In this way, described slow
After rushing the input terminal reception control signal Col of device, it can keep and restore the control signal Col, and steadily by it
It is transmitted to the source electrode of the NMOS tube M1.Further, in one embodiment, the buffer includes the first CMOS inverter
With the second CMOS inverter, the output end of first CMOS inverter is connect with the input terminal of second CMOS inverter,
The output end of second CMOS inverter is connect with the source electrode of the NMOS tube M1.Illustratively, the first CMOS reverse phase
Device is connected and is formed by the first N-channel MOS pipe M4 and the first P-channel metal-oxide-semiconductor M3, and second CMOS inverter is by the second N-channel
Metal-oxide-semiconductor M6 connect to be formed with the second P-channel metal-oxide-semiconductor M5.
Fig. 3 is referred to, in one embodiment, also discloses a kind of metal-oxide-semiconductor parameter degradation test circuit, including parameter is surveyed
Amount circuit and above-mentioned metal-oxide-semiconductor parameter degradation circuit, the input terminal of the metal-oxide-semiconductor parameter degradation circuit are connect with output end, institute
The input terminal for stating parameter measurement circuit is connect with the output end of the metal-oxide-semiconductor parameter degradation circuit, wherein the metal-oxide-semiconductor parameter
The input terminal of degenerative circuit is that the grid of the NMOS tube M1 connect to be formed with the grid of the PMOS tube M2, the metal-oxide-semiconductor ginseng
The drain electrode that the output end of number degenerative circuit is the NMOS tube M1 connect to be formed with the drain electrode of the PMOS tube M2.
When test, so that the metal-oxide-semiconductor parameter degradation test circuit is in stress and apply state, that is, control the NMOS tube
The source electrode of M1 receives the high level signal, and the NMOS tube M1 is by HCI effects, and device parameters can degenerate.Later
The metal-oxide-semiconductor parameter degradation test circuit is set to be in parameter measurement state, even if the input terminal of the metal-oxide-semiconductor parameter degradation circuit
The input signal In is received, and the output end of the metal-oxide-semiconductor parameter degradation circuit can export oscillator signal to the parameter and survey
Circuit is measured, the parameter measurement circuit measures the frequency of the oscillator signal, and according to the frequency of the oscillator signal
The degree of degeneration of MOS transistor device parameter is calculated with the change rate of reference frequency ratio；Wherein, the reference frequency is described
Oscillator signal frequency when the device parameters of NMOS tube M1 are not degenerated.
Above-mentioned metal-oxide-semiconductor parameter degradation test circuit makes the metal-oxide-semiconductor due to using the metal-oxide-semiconductor parameter degradation circuit
The input terminal of parameter degradation circuit is connect with output end, therefore can make the parameter measurement circuit test object, i.e., the described MOS
The accuracy of the oscillator signal of pipe parameter degradation circuit output, so as to so that the parameter measurement circuit to the concussion
The oscillator signal frequency obtained after signal testing can only influence of the reaction HCI effect to MOS transistor device parameter, and by by institute
Oscillator signal frequency is stated compared with the reference frequency, accurate MOS transistor device parameter degradation degree can be obtained, to improve
State the accuracy of the test result of metal-oxide-semiconductor parameter degradation test circuit.
Refer to Fig. 6, in one embodiment, additionally provide it is a kind of can accurate early warning metal-oxide-semiconductor parameter degradation early warning
Circuit.
A kind of metal-oxide-semiconductor parameter degradation early warning circuit, including the first metal-oxide-semiconductor parameter degradation circuit, the second metal-oxide-semiconductor parameter degradation
Circuit, selector and parameter measurement circuit, the first metal-oxide-semiconductor parameter degradation circuit is using the metal-oxide-semiconductor parameter degradation electricity
Road, the second metal-oxide-semiconductor parameter degradation circuit use the metal-oxide-semiconductor parameter degradation circuit.
Wherein, the input terminal of the first metal-oxide-semiconductor parameter degradation circuit is connect with output end, as stress annular oscillation circuit；
The grid of the NMOS tube M1 in first metal-oxide-semiconductor parameter degradation circuit and the grid of the PMOS tube M2 connect into described first
The input terminal of metal-oxide-semiconductor parameter degradation circuit, the drain electrode of the NMOS tube M1 in the first metal-oxide-semiconductor parameter degradation circuit with it is described
The drain electrode of PMOS tube M2 connects into the output end of the first metal-oxide-semiconductor parameter degradation circuit.And the second metal-oxide-semiconductor parameter degradation
The input terminal of circuit is connect with output end, as benchmark annular oscillation circuit；The NMOS tube in second metal-oxide-semiconductor parameter degradation circuit
The grid of the grid of M1 and the PMOS tube M2 connect into the input terminal of the second metal-oxide-semiconductor parameter degradation circuit, the second metal-oxide-semiconductor
The drain electrode of the NMOS tube M1 in parameter degradation circuit and the drain electrode of the PMOS tube M2 connect into the second metal-oxide-semiconductor parameter
The output end of degenerative circuit.
The output end of the first metal-oxide-semiconductor parameter degradation circuit is connect with the first input end of the selector, and described
The output end of two metal-oxide-semiconductor parameter degradation circuits is connect with the second input terminal of the selector；The output end of the selector with
The input terminal of the parameter measurement circuit connects.
In use, so that the metal-oxide-semiconductor parameter degradation early warning circuit is in stress applies state, it is in the selector
Off-state, and the source electrode of the NMOS tube M1 in the first metal-oxide-semiconductor parameter degradation circuit is made to receive the high level signal (i.e.
First control signal Col_0), and the source electrode of the NMOS tube M1 in the second metal-oxide-semiconductor parameter degradation circuit receives the low electricity
Ordinary mail number (i.e. second control signal Col_1), in this way, the first of the first metal-oxide-semiconductor parameter degradation circuit output can be made to shake
Signal is by HCI effects, and the second oscillator signal of the second metal-oxide-semiconductor parameter degradation circuit output is not by HCI effect shadow
It rings, i.e., the described second metal-oxide-semiconductor parameter degradation circuit can be used as the reference circuit of the first metal-oxide-semiconductor parameter degradation circuit, right
Second oscillator signal answered can be used as the reference signal of first oscillator signal.
The metal-oxide-semiconductor parameter degradation early warning circuit is set to be in parameter measurement state later, even if the selector is in work
Make state.
Specifically, the enable end of the selector receives the first enable signal En, the selector is in the first enable signal
The first metal-oxide-semiconductor parameter degradation circuit and the parameter measurement circuit are connected under the control of En；The first metal-oxide-semiconductor parameter is moved back
The input terminal for changing circuit receives the input signal In, and exports the first oscillator signal to the parameter measurement circuit, the ginseng
Number measuring circuit measures the first oscillator signal frequency.The enable end of the selector receives the first enable signal En, described
Selector is connected to the second metal-oxide-semiconductor parameter degradation circuit and parameter measurement electricity under the control of the first enable signal En
Road；The input terminal of the second metal-oxide-semiconductor parameter degradation circuit receives the input signal In, and exports the second oscillator signal to institute
Parameter measurement circuit is stated, the parameter measurement circuit measures the second oscillator signal frequency；By calculating first concussion
Signal frequency can react the degree of degeneration of metal-oxide-semiconductor parameter with the change rate of the ratio of the second oscillator signal frequency, work as MOS
When the degree of degeneration of pipe parameter is more than preset value, the pre-warning signal of sending.
Above-mentioned metal-oxide-semiconductor parameter degradation early warning circuit is by being arranged the first metal-oxide-semiconductor parameter degradation circuit and described the
Two metal-oxide-semiconductor parameter degradation circuits, and make the first metal-oxide-semiconductor parameter degradation circuit and the second metal-oxide-semiconductor parameter degradation circuit
It include the identical metal-oxide-semiconductor parameter degradation circuit, and the input terminal and output end of the first metal-oxide-semiconductor parameter degradation circuit
Connection, the input terminal of the second metal-oxide-semiconductor parameter degradation circuit is connect with output end, and the first metal-oxide-semiconductor parameter degradation is electric
The source electrode of the NMOS tube M1 in road receives high level signal, the NMOS in the second metal-oxide-semiconductor parameter degradation circuit
The source electrode of pipe M1 receives low level signal, in this way, the second oscillator signal parameter of the second metal-oxide-semiconductor parameter degradation circuit
It will receive the influence of HCI effect, and the first oscillator signal parameter of the first metal-oxide-semiconductor parameter degradation circuit not will receive
The influence of HCI effect, so that the parameter is surveyed when selector gates first output end and the second output terminal respectively
Amount circuit can measure the frequency of first oscillator signal Yu second oscillator signal respectively, and by calculating described first
The change rate of the ratio of oscillator signal frequency and the second oscillator signal frequency can accurate response metal-oxide-semiconductor parameter degeneration
Degree issues accurate pre-warning signal when the degree of degeneration of metal-oxide-semiconductor parameter is more than preset value.
In addition, the metal-oxide-semiconductor parameter degradation early warning circuit is realized since all units are all made of standard block, it can
Different process conditions are adapted to, the transplanting of circuit is conducive to.And the circuit hardware realizes that simply, cost of implementation is lower, therefore,
It can also be widely used in digital integrated electronic circuit, the advantage with performance and cost.At the same time, since the metal-oxide-semiconductor is joined
Number degeneration early warning circuit can convert metal-oxide-semiconductor parameter degradation caused by HCI effect to the frequency letter that chip can be detected independently
Number, it is therefore not necessary to which external equipment assists, the requirement of on-line monitoring can be met.
In order to allow first oscillator signal and second oscillator signal it is stable be transferred to the parameter measurement
Circuit is also additionally arranged output buffer circuit in one embodiment, and makes the input terminal for exporting buffer circuit and the choosing
The output end connection of device is selected, the output end of the output buffer circuit is connect with the input terminal of the parameter measurement circuit.Specifically
, the selector receives first oscillator signal or second oscillator signal, and by first oscillator signal or
Second oscillator signal described in person is forwarded to the output buffer circuit, and the output buffer circuit is for keeping and restoring described the
First oscillator signal or second oscillator signal perhaps second oscillator signal and are transmitted to by one oscillator signal
The parameter measurement circuit.
It can also make the parameter measurement circuit in one embodiment in order to facilitate the parameter measurement circuit is controlled
Enable end receive the second enable signal En_C, and the parameter measurement circuit under the control of the second enable signal En_C to institute
The frequency for stating the first oscillator signal or the second oscillator signal measures.Further, in one embodiment, it can also add
For issuing the first control signal Col_0, the second control signal Col_1, the first enable signal En and institute
State the control circuit of the second enable signal En_C.
Fig. 5 is referred to, in one embodiment, additionally provides a kind of metal-oxide-semiconductor parameter degradation test circuit.
A kind of metal-oxide-semiconductor parameter degradation test circuit, comprising: parameter measurement circuit and the 2N+1 metal-oxide-semiconductor parameter degradations
Circuit, wherein N is positive integer.Wherein, the output end of the previous metal-oxide-semiconductor parameter degradation circuit and next metal-oxide-semiconductor
The input terminal of parameter degradation circuit connects, so that the 2N+1 metal-oxide-semiconductor parameter degradation circuits are sequentially connected and circularize shake
Circuit is swung, illustratively, the quantity of the metal-oxide-semiconductor parameter degradation circuit can be set as needed, as shown in Figure 4.And it is described
The input terminal of parameter measurement circuit is connect with the output end of metal-oxide-semiconductor parameter degradation circuit described in one of them, wherein each described
The grid of the NMOS tube M1 in metal-oxide-semiconductor parameter degradation circuit connect with the grid of the PMOS tube M2 to be formed it is each described
The input terminal of metal-oxide-semiconductor parameter degradation circuit, the drain electrode of the NMOS tube M1 in each metal-oxide-semiconductor parameter degradation circuit and institute
The drain electrode connection for stating PMOS tube M2 forms the output end of each metal-oxide-semiconductor parameter degradation circuit.
When test, so that the metal-oxide-semiconductor parameter degradation test circuit is in stress and apply state, that is, control each described
The source electrode of the NMOS tube M1 in metal-oxide-semiconductor parameter degradation circuit receives the identical high level signal, and each described
By HCI effects, device parameters can degenerate the NMOS tube M1 in metal-oxide-semiconductor parameter degradation circuit.Make the MOS later
Pipe parameter degradation test circuit is in parameter measurement state, even if the input terminal of one of them metal-oxide-semiconductor parameter degradation circuit
Receive the input signal In, and the output end of one of them metal-oxide-semiconductor parameter degradation circuit exports oscillator signal to described
Parameter measurement circuit, the parameter measurement circuit measure the frequency of the oscillator signal, and according to the oscillator signal
Frequency and the change rate of reference frequency ratio calculate the degree of degeneration of MOS transistor device parameter；Wherein, the reference frequency is
Oscillator signal frequency when the device parameters of the NMOS tube M1 are not degenerated.
Above-mentioned metal-oxide-semiconductor parameter degradation test circuit makes previous by using the 2N+1 metal-oxide-semiconductor parameter degradation circuits
The output end of metal-oxide-semiconductor parameter degradation circuit described in the output end and the latter of the metal-oxide-semiconductor parameter degradation circuit connects, and makes
The source electrode of the NMOS tube M1 of each metal-oxide-semiconductor parameter degradation circuit receives the identical high level signal, in this way,
Each metal-oxide-semiconductor parameter degradation circuit can be made only to be influenced by HCI effect, to guarantee the parameter measurement circuit test pair
As the i.e. accuracy of the oscillator signal of one of them metal-oxide-semiconductor parameter degradation circuit output, so that the parameter
The oscillator signal frequency that measuring circuit obtains after testing the oscillator signal can only reaction HCI effect join MOS transistor device
Several influences, and joined by the way that the oscillator signal frequency compared with the reference frequency, can be obtained to accurate MOS transistor device
Number degree of degeneration, to improve the accuracy of the test result of the metal-oxide-semiconductor parameter degradation test circuit.
Refer to Fig. 6, in another embodiment, additionally provide it is a kind of can accurate early warning metal-oxide-semiconductor parameter degradation
Early warning circuit.
A kind of metal-oxide-semiconductor parameter degradation early warning circuit, comprising: stress annular oscillation circuit, benchmark annular oscillation circuit, selector and parameter
Measuring circuit；As shown in figure 5, the stress annular oscillation circuit includes that 2N+1 metal-oxide-semiconductor parameter is moved back with the benchmark annular oscillation circuit
Change circuit, wherein N is positive integer.It illustratively, can be according to specific measurement needs, to the stress annular oscillation circuit and the base
The number of the metal-oxide-semiconductor parameter degradation circuit in quasi- annular oscillation circuit is set, 5 cascade MOS as shown in Figure 4
Pipe parameter degradation circuit.
Wherein, the grid of the NMOS tube M1 in each metal-oxide-semiconductor parameter degradation circuit is connect with the grid of PMOS tube M2
At the input terminal of each metal-oxide-semiconductor parameter degradation circuit, the leakage of the NMOS tube M1 in each metal-oxide-semiconductor parameter degradation circuit
The drain electrode of pole and PMOS tube M2 connect into the output end of each metal-oxide-semiconductor parameter degradation circuit；In the stress annular oscillation circuit
The previous metal-oxide-semiconductor parameter degradation circuit output end and next metal-oxide-semiconductor parameter degradation circuit input terminal connect
It connects；The output end of the previous metal-oxide-semiconductor parameter degradation circuit in the benchmark annular oscillation circuit and next metal-oxide-semiconductor are joined
The input terminal connection of number degenerative circuit；One of them metal-oxide-semiconductor parameter degradation circuit in the stress annular oscillation circuit it is defeated
Outlet and is connect as concussion output OutPut with the first input end of the selector, its in the benchmark annular oscillation circuit
In metal-oxide-semiconductor parameter degradation circuit output end as concussion output OutPut, and it is defeated with the second of the selector
Enter end connection, the output end of the selector is connect with the input terminal of the parameter measurement circuit.
In use, so that the metal-oxide-semiconductor parameter degradation early warning circuit is in stress applies state, even if the NOL ring shakes
The source electrode of the NMOS tube M1 in each metal-oxide-semiconductor parameter degradation circuit in circuit receives the identical high level
Signal (i.e. first control signal Col_0), and in each metal-oxide-semiconductor parameter degradation circuit in the benchmark annular oscillation circuit
The source electrode of the NMOS tube M1 receives the identical low level signal (i.e. second control signal Col_1).In this way, institute can be made
The first oscillator signal of the first metal-oxide-semiconductor parameter degradation circuit output is stated by HCI effects, and the second metal-oxide-semiconductor parameter is moved back
Change the second oscillator signal of circuit output not by HCI effects, i.e., the described second metal-oxide-semiconductor parameter degradation circuit can be used as institute
The reference circuit of the first metal-oxide-semiconductor parameter degradation circuit is stated, corresponding second oscillator signal can be used as first concussion
The reference signal of signal.
The metal-oxide-semiconductor parameter degradation early warning circuit is set to be in parameter measurement state later, even if the selector is in work
Make state.
Specifically, the enable end of the selector receives the first enable signal En, the selector is in the first enable signal
One of them the described metal-oxide-semiconductor parameter degradation being connected under the control of En in the parameter measurement circuit and the stress annular oscillation circuit
Circuit；The input terminal of one of them metal-oxide-semiconductor parameter degradation circuit in the stress annular oscillation circuit receives the input letter
Number In, and the first oscillator signal is exported to the parameter measurement circuit, parameter measurement circuit measurement the first concussion letter
Number frequency.The enable end of the selector receives the first enable signal En, control of the selector in the first enable signal En
One of them described metal-oxide-semiconductor parameter degradation circuit in the lower connection parameter measurement circuit and the benchmark annular oscillation circuit；Institute
The input terminal for stating one of them metal-oxide-semiconductor parameter degradation circuit in benchmark annular oscillation circuit receives the input signal In, and
The second oscillator signal is exported to the parameter measurement circuit, the parameter measurement circuit measures the second oscillator signal frequency；
Metal-oxide-semiconductor can be reacted with the change rate of the ratio of the second oscillator signal frequency by calculating the first oscillator signal frequency
The degree of degeneration of parameter is issued warning signal when the degree of degeneration of metal-oxide-semiconductor parameter is more than preset value.
Above-mentioned metal-oxide-semiconductor parameter degradation early warning circuit by the way that the stress circuit and the reference circuit is arranged, and makes institute
It states stress circuit and the reference circuit includes the 2N+1 metal-oxide-semiconductor parameter degradation circuits, and in the stress circuit
The input terminal of metal-oxide-semiconductor parameter degradation circuit described in the output end and the latter of the previous metal-oxide-semiconductor parameter degradation circuit connects,
Metal-oxide-semiconductor parameter degradation described in the output end and the latter of the previous metal-oxide-semiconductor parameter degradation circuit in the reference circuit
The input terminal of circuit connects, and the NMOS tube M1 in the stress circuit in each metal-oxide-semiconductor parameter degradation circuit
Source electrode receives identical high level signal, described in each metal-oxide-semiconductor parameter degradation circuit in the reference circuit
The source electrode of NMOS tube M1 receives identical low level signal, in this way, the second oscillator signal parameter of the reference circuit
It will receive the influence of HCI effect, and the first oscillator signal parameter of the stress circuit not will receive the shadow of HCI effect
It rings, thus when selector gates first output end and the second output terminal respectively, the parameter measurement circuit can be with
The frequency of first oscillator signal Yu second oscillator signal is measured respectively, and by calculating the first oscillator signal frequency
The change rate of the ratio of rate and the second oscillator signal frequency can accurate response metal-oxide-semiconductor parameter degree of degeneration, work as MOS
When the degree of degeneration of pipe parameter is more than preset value, accurate pre-warning signal is issued.
In addition, the metal-oxide-semiconductor parameter degradation early warning circuit is realized since all units are all made of standard block, it can
Different process conditions are adapted to, the transplanting of circuit is conducive to.And the circuit hardware realizes that simply, cost of implementation is lower, therefore,
It can also be widely used in digital integrated electronic circuit, the advantage with performance and cost.At the same time, since the metal-oxide-semiconductor is joined
Number degeneration early warning circuit can convert metal-oxide-semiconductor parameter degradation caused by HCI effect to the frequency letter that chip can be detected independently
Number, it is therefore not necessary to which external equipment assists, the requirement of on-line monitoring can be met.
In order to allow first oscillator signal and second oscillator signal it is stable be transferred to the parameter measurement
Circuit is also additionally arranged output buffer circuit in one embodiment, and makes the input terminal for exporting buffer circuit and the choosing
The output end connection of device is selected, the output end of the output buffer circuit is connect with the input terminal of the parameter measurement circuit.Specifically
, the selector receives first oscillator signal or second oscillator signal, and by first oscillator signal or
Second oscillator signal described in person is forwarded to the output buffer circuit, and the output buffer circuit is for keeping and restoring described the
First oscillator signal or second oscillator signal perhaps second oscillator signal and are transmitted to by one oscillator signal
The parameter measurement circuit.
It can also make the parameter measurement circuit in one embodiment in order to facilitate the parameter measurement circuit is controlled
Enable end receive the second enable signal En_C, and the parameter measurement circuit under the control of the second enable signal En_C to institute
The frequency for stating the first oscillator signal or the second oscillator signal measures.Further, in one embodiment, it can also add
For issuing the first control signal Col_0, the second control signal Col_1, the first enable signal En and institute
State the control circuit of the second enable signal En_C.
Each technical characteristic of embodiment described above can be combined arbitrarily, for simplicity of description, not to above-mentioned reality
It applies all possible combination of each technical characteristic in example to be all described, as long as however, the combination of these technical characteristics is not present
Contradiction all should be considered as described in this specification.
The embodiments described above only express several embodiments of the present invention, and the description thereof is more specific and detailed, but simultaneously
It cannot therefore be construed as limiting the scope of the patent.It should be pointed out that coming for those of ordinary skill in the art
It says, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to protection of the invention
Range.Therefore, the scope of protection of the patent of the invention shall be subject to the appended claims.
Claims (10)
1. a kind of metal-oxide-semiconductor parameter degradation circuit characterized by comprising NMOS tube and PMOS tube；
The grid of the NMOS tube is connect with the grid of the PMOS tube, the drain electrode and the drain electrode of the PMOS tube of the NMOS tube
Connection；The source electrode of the PMOS tube connects power supply；
The source electrode of the NMOS tube receives control signal, and the control signal uses level signal；
When the control signal is high level signal, the channel of the NMOS tube generates hot carrier；
Wherein, interfacial state is generated during the hot carrier in jection to gate oxide and oxide layer subsides charge, to make
At the damage of oxide layer, the device parameters of NMOS tube is made to degenerate；
The grid of the NMOS tube and the grid of the PMOS tube receive input signal, the drain electrode of the NMOS tube and the PMOS
The output signal of the drain electrode output and the input signal reverse phase of pipe；The NMOS tube and the PMOS tube connect into phase inverter；
When the input signal is low level signal, the PMOS tube conducting, the NMOS tube cut-off, the output signal is height
Level signal；When the input signal is high level signal, the PMOS tube cut-off, the NMOS transistor conduction, the output letter
Number be low level signal.
2. metal-oxide-semiconductor parameter degradation circuit according to claim 1, which is characterized in that further include: buffer；
The output end of the buffer is connect with the source electrode of the NMOS tube；
The input terminal of the buffer receives the control signal, and the control signal is transmitted to the source of the NMOS tube
Pole.
3. a kind of metal-oxide-semiconductor parameter degradation tests circuit characterized by comprising parameter measurement circuit and claims 1 or 2 institute
The metal-oxide-semiconductor parameter degradation circuit stated；
The input terminal of the metal-oxide-semiconductor parameter degradation circuit is that the grid of the NMOS tube connect shape with the grid of the PMOS tube
At the output end of the metal-oxide-semiconductor parameter degradation circuit is that the drain electrode of the NMOS tube connect to be formed with the drain electrode of the PMOS tube；
The input terminal of the metal-oxide-semiconductor parameter degradation circuit is connect with output end, the input terminal of the parameter measurement circuit with it is described
The output end of metal-oxide-semiconductor parameter degradation circuit connects；
The source electrode of the NMOS tube receives the high level signal, and the device parameters of the NMOS tube are degenerated；
The input terminal of the metal-oxide-semiconductor parameter degradation circuit receives the input signal, the output of the metal-oxide-semiconductor parameter degradation circuit
End output oscillator signal；The input terminal of the parameter measurement circuit receives the oscillator signal, and measures the oscillator signal
Frequency calculates the degree of degeneration of MOS transistor device parameter according to the change rate of the frequency of the oscillator signal and reference frequency ratio；
Wherein, the oscillator signal frequency when reference frequency is not degenerated for the device parameters of the NMOS tube.
4. a kind of metal-oxide-semiconductor parameter degradation early warning circuit characterized by comprising the first metal-oxide-semiconductor parameter degradation circuit, the 2nd MOS
Pipe parameter degradation circuit, selector and parameter measurement circuit；The first metal-oxide-semiconductor parameter degradation circuit uses claim 1
Or metal-oxide-semiconductor parameter degradation circuit described in 2, the second metal-oxide-semiconductor parameter degradation circuit use MOS of any of claims 1 or 2
Pipe parameter degradation circuit；
The grid of the NMOS tube and the grid of the PMOS tube in first metal-oxide-semiconductor parameter degradation circuit connect into described first
The input terminal of metal-oxide-semiconductor parameter degradation circuit, the drain electrode of the NMOS tube in the first metal-oxide-semiconductor parameter degradation circuit and the PMOS
The drain electrode of pipe connects into the output end of the first metal-oxide-semiconductor parameter degradation circuit；The first metal-oxide-semiconductor parameter degradation circuit it is defeated
Enter end to connect with output end；
The grid of the NMOS tube and the grid of the PMOS tube in second metal-oxide-semiconductor parameter degradation circuit connect into described second
The input terminal of metal-oxide-semiconductor parameter degradation circuit, the drain electrode of the NMOS tube in the second metal-oxide-semiconductor parameter degradation circuit and the PMOS
The drain electrode of pipe connects into the output end of the second metal-oxide-semiconductor parameter degradation circuit；The second metal-oxide-semiconductor parameter degradation circuit it is defeated
Enter end to connect with output end；
The output end of the first metal-oxide-semiconductor parameter degradation circuit is connect with the first input end of the selector, the 2nd MOS
The output end of pipe parameter degradation circuit is connect with the second input terminal of the selector；The output end of the selector and the ginseng
The input terminal connection of number measuring circuit；
The source electrode reception high level signal of the NMOS tube in the first metal-oxide-semiconductor parameter degradation circuit, described second
The source electrode of the NMOS tube in metal-oxide-semiconductor parameter degradation circuit receives the low level signal；The second metal-oxide-semiconductor parameter degradation
Circuit is the reference circuit of the first metal-oxide-semiconductor parameter degradation circuit；
The enable end of the selector receives the first enable signal, and the selector is connected to institute under the control of the first enable signal
State the first metal-oxide-semiconductor parameter degradation circuit and the parameter measurement circuit；The input of the first metal-oxide-semiconductor parameter degradation circuit terminates
It receives the input signal, and exports the first oscillator signal to the parameter measurement circuit, described in the parameter measurement circuit measurement
First oscillator signal frequency；
The enable end of the selector receives the first enable signal, and the selector is connected to institute under the control of the first enable signal
State the second metal-oxide-semiconductor parameter degradation circuit and the parameter measurement circuit；The input of the second metal-oxide-semiconductor parameter degradation circuit terminates
It receives the input signal, and exports the second oscillator signal to the parameter measurement circuit, described in the parameter measurement circuit measurement
Second oscillator signal frequency；
Metal-oxide-semiconductor is reacted with the change rate of the ratio of the second oscillator signal frequency by calculating the first oscillator signal frequency
The degree of degeneration of parameter is issued warning signal when the degree of degeneration of metal-oxide-semiconductor parameter is more than preset value.
5. metal-oxide-semiconductor parameter degradation early warning circuit according to claim 4, which is characterized in that further include: output caching electricity
Road；
The input terminal of the output buffer circuit is connect with the output end of the selector, the output end of the output buffer circuit
It is connect with the input terminal of the parameter measurement circuit；
The selector receives first oscillator signal or second oscillator signal, and by first oscillator signal or
Second oscillator signal described in person is forwarded to the output buffer circuit, and the output buffer circuit is for keeping and restoring described the
First oscillator signal or second oscillator signal perhaps second oscillator signal and are transmitted to by one oscillator signal
The parameter measurement circuit.
6. metal-oxide-semiconductor parameter degradation early warning circuit according to claim 4 or 5, which is characterized in that the parameter measurement circuit
Enable end receive the second enable signal, the parameter measurement circuit under the control of the second enable signal to it is described first concussion
The frequency of signal or the second oscillator signal measures.
7. a kind of metal-oxide-semiconductor parameter degradation tests circuit characterized by comprising parameter measurement circuit and 2N+1 claim 1 or
Metal-oxide-semiconductor parameter degradation circuit described in 2, wherein N is positive integer；
The grid of the NMOS tube in each metal-oxide-semiconductor parameter degradation circuit connect to be formed often with the grid of the PMOS tube
The input terminal of a metal-oxide-semiconductor parameter degradation circuit, the drain electrode of the NMOS tube in each metal-oxide-semiconductor parameter degradation circuit
The output end of each metal-oxide-semiconductor parameter degradation circuit is formed with the drain electrode connection of the PMOS tube；
The input terminal of the output end of the previous metal-oxide-semiconductor parameter degradation circuit and next metal-oxide-semiconductor parameter degradation circuit
Connection；The input terminal of the parameter measurement circuit is connect with the output end of metal-oxide-semiconductor parameter degradation circuit described in one of them；
The source electrode of the NMOS tube in each metal-oxide-semiconductor parameter degradation circuit receives the identical high level signal；
The input terminal of one of them metal-oxide-semiconductor parameter degradation circuit receives the input signal, one of them described metal-oxide-semiconductor ginseng
The output end of number degenerative circuit exports oscillator signal, and the input terminal of the parameter measurement circuit receives the oscillator signal, and surveys
Measure the oscillator signal frequency；
The degree of degeneration of MOS transistor device parameter is calculated according to the change rate of the frequency of the oscillator signal and reference frequency ratio；
Wherein, the oscillator signal frequency when reference frequency is not degenerated for the device parameters of the NMOS tube.
8. a kind of metal-oxide-semiconductor parameter degradation early warning circuit characterized by comprising stress annular oscillation circuit, benchmark annular oscillation circuit, choosing
Select device and parameter measurement circuit；The stress annular oscillation circuit and the benchmark annular oscillation circuit include 2N+1 claims 1 or 2 institute
The metal-oxide-semiconductor parameter degradation circuit stated, wherein N is positive integer；
The grid of the NMOS tube and the grid of the PMOS tube in each metal-oxide-semiconductor parameter degradation circuit connect into each
The input terminal of the metal-oxide-semiconductor parameter degradation circuit, the drain electrode of the NMOS tube in each metal-oxide-semiconductor parameter degradation circuit with
The drain electrode of the PMOS tube connects into the output end of each metal-oxide-semiconductor parameter degradation circuit；
The output end and next metal-oxide-semiconductor of the previous metal-oxide-semiconductor parameter degradation circuit in the stress annular oscillation circuit
The input terminal of parameter degradation circuit connects；The previous metal-oxide-semiconductor parameter degradation circuit in the benchmark annular oscillation circuit it is defeated
Outlet is connect with the input terminal of next metal-oxide-semiconductor parameter degradation circuit；
The of the output end of one of them metal-oxide-semiconductor parameter degradation circuit in the stress annular oscillation circuit and the selector
The connection of one input terminal, the output end of one of them metal-oxide-semiconductor parameter degradation circuit in the benchmark annular oscillation circuit with it is described
Second input terminal of selector connects, and the output end of the selector is connect with the input terminal of the parameter measurement circuit；
The source electrode of the NMOS tube in each metal-oxide-semiconductor parameter degradation circuit in the stress annular oscillation circuit receives phase
The same high level signal；The NMOS in each metal-oxide-semiconductor parameter degradation circuit in the benchmark annular oscillation circuit
The source electrode of pipe receives the identical low level signal；
The enable end of the selector receives the first enable signal, and the selector is connected to institute under the control of the first enable signal
State one of them described metal-oxide-semiconductor parameter degradation circuit in parameter measurement circuit and the stress annular oscillation circuit；The NOL ring
The input terminal of one of them metal-oxide-semiconductor parameter degradation circuit in vibration circuit receives the input signal, and exports the first shake
Signal is swung to the parameter measurement circuit, and the parameter measurement circuit measures the first oscillator signal frequency；
The enable end of the selector receives the first enable signal, and the selector is connected to institute under the control of the first enable signal
State one of them described metal-oxide-semiconductor parameter degradation circuit in parameter measurement circuit and the benchmark annular oscillation circuit；The reference rings
The input terminal of one of them metal-oxide-semiconductor parameter degradation circuit in vibration circuit receives the input signal, and exports the second shake
Signal is swung to the parameter measurement circuit, and the parameter measurement circuit measures the second oscillator signal frequency；
Metal-oxide-semiconductor is reacted with the change rate of the ratio of the second oscillator signal frequency by calculating the first oscillator signal frequency
The degree of degeneration of parameter is issued warning signal when the degree of degeneration of metal-oxide-semiconductor parameter is more than preset value.
9. metal-oxide-semiconductor parameter degradation early warning circuit according to claim 8, which is characterized in that further include: output caching electricity
Road；
The input terminal of the output buffer circuit is connect with the output end of the selector, the output end of the output buffer circuit
It is connect with the input terminal of the parameter measurement circuit；
The selector receives first oscillator signal or second oscillator signal, and by first oscillator signal or
Second oscillator signal described in person is forwarded to the output buffer circuit, and the output buffer circuit is for keeping and restoring described the
First oscillator signal or second oscillator signal perhaps second oscillator signal and are transmitted to by one oscillator signal
The parameter measurement circuit.
10. metal-oxide-semiconductor parameter degradation early warning circuit according to claim 8 or claim 9, which is characterized in that the parameter measurement electricity
The enable end on road receives the second enable signal, and the parameter measurement circuit is under the control of the second enable signal to first shake
The frequency for swinging signal or the second oscillator signal measures.
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| CN112560380A (en) * | 2019-09-25 | 2021-03-26 | 天津大学 | Radio frequency parameter degradation model of MOS transistor using knowledge-based neural network |
| CN110780178B (en) * | 2019-11-25 | 2022-03-18 | 珠海复旦创新研究院 | Alternating current reliability test circuit and test method for broadband device |
| CN113835007B (en) * | 2020-06-08 | 2022-09-20 | 长鑫存储技术有限公司 | Method for testing tolerance of hot carrier effect |
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