CN106482829B - The dynamic of single-photon detector and static combined test system and its test method - Google Patents
The dynamic of single-photon detector and static combined test system and its test method Download PDFInfo
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- CN106482829B CN106482829B CN201610836161.3A CN201610836161A CN106482829B CN 106482829 B CN106482829 B CN 106482829B CN 201610836161 A CN201610836161 A CN 201610836161A CN 106482829 B CN106482829 B CN 106482829B
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- 238000012360 testing method Methods 0.000 title claims abstract description 52
- 230000003068 static effect Effects 0.000 title claims abstract description 22
- 238000010998 test method Methods 0.000 title claims description 7
- 239000000203 mixture Substances 0.000 claims abstract description 9
- 238000011534 incubation Methods 0.000 claims abstract description 4
- 230000005641 tunneling Effects 0.000 claims description 24
- 230000000694 effects Effects 0.000 claims description 14
- 230000015556 catabolic process Effects 0.000 claims description 8
- 238000005259 measurement Methods 0.000 claims description 6
- 230000004888 barrier function Effects 0.000 claims description 3
- 230000005684 electric field Effects 0.000 claims description 3
- 230000035515 penetration Effects 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 5
- 238000004364 calculation method Methods 0.000 abstract description 2
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- 229910000756 V alloy Inorganic materials 0.000 description 1
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- 230000009286 beneficial effect Effects 0.000 description 1
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/44—Electric circuits
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/44—Electric circuits
- G01J2001/444—Compensating; Calibrating, e.g. dark current, temperature drift, noise reduction or baseline correction; Adjusting
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/44—Electric circuits
- G01J2001/4446—Type of detector
- G01J2001/446—Photodiode
- G01J2001/4466—Avalanche
Abstract
The invention discloses a kind of dynamics of single-photon detector and static combined test system, including digital sourcemeter, changing device, test circuit and oscillograph, avalanche diode is positioned in the incubation chamber in changing device, the output end connection of the cathode and digital sourcemeter of avalanche diode, the input terminal connection of the anode of avalanche diode and test circuit, the output waveform of avalanche diode is connected to the input terminal of oscillograph, and the output end of test circuit is connected to computer.Due to different temperatures, different overbias and under the different dead times, the composition of dark current can change, and the present invention joins together to be separated by dynamic test and static test, realize dynamic and static united debugging in real time；And the composition of dark current is determined, and the method that the determination dark current is constituted is easy to implement, therefore, dark current constitutes not only upper theoretical calculation, is experimentally also easy to prove.
Description
Technical field
The present invention relates to a kind of dynamic of single-photon detector and static combined test system and its test methods, belong to micro-
Optical detector technology field.
Background technology
Single-photon detecting survey technology is the powerful measure for detecting faint optical signal, has extensively in quantum communications, laser ranging etc.
General application.The principal element of limitation single-photon detector quantum efficiency is dark counting and afterpulse at present, is to cause quantum logical
In letter an important factor for the bit error rate.Photoelectric detector (such as avalanche photodide) is an important set of single-photon detector
At part, parameter corresponding with detector dark counting, afterpulse probability is dark current respectively and is captured releasing again for carrier
The electric current of generation is put, therefore, in order to reduce dark counting and the afterpulse probability of single-photon detector it is necessary to analyzing avalanche diode
The source of dark current, research reduce dark current, afterpulse effect method, the performance of single-photon detector could be improved.Work
The noise of single-photon detector under Geiger mode angular position digitizer is mainly derived from three classes：Random noise caused by thermal noise, high-V alloy
Lower carrier occurs tunneling effect and snowslide, trapping centre is caused to discharge carrier i.e. afterpulse effect again.Afterpulse effect is in reality
Test and be relatively easy to distinguish, although and thermal noise and tunnelling current have the stringent derivation of equation in theory, experimentally divide
It does not obtain still more difficult.Determine that the composition of dark current is also one research hotspot of monochromatic light subdomains instantly.
Avalanche diode is a kind of diode that sensitivity is high, and slightly larger electric current can be allowed to damage, therefore right
It is certain it is noted that limitation to electric current when it is tested.In existing static test, I-V, C-V curve are needed by means of half
Conductor parameter analyzer, but can not achieve real-time control；Real-time control can also may be implemented, still by digital sourcemeter
It cannot obtain C-V curve.And the control of temperature is needed by means of becoming circuit temperature, semiconductor refrigerating is mainly used at present, system
Speed of cooling is fast and at low cost.Single-photon detector usually will include photoelectric detector (such as avalanche photodide), device drive
Dynamic circuit and output signal extract circuit, and being referred to as dynamic to the test of the dark counting of its whole system etc. tests.And for same
For the avalanche diode of sample, static and dynamic test obtain the result is that different, static test can obtain total
Dark current, and dark counting feature can be obtained by dynamically testing.And static test system and dynamic test system are for many parameters
Definition mode have bigger difference, such as avalanche breakdown voltage.In static test, avalanche breakdown voltage is that snow dark current reaches certain
Bias voltage value when one value；And in dynamic circuit, for the bias voltage value for occurring more than when a certain output pulse for the first time.
Facts proved that the two is widely different.Therefore, it is necessary to joint test, to realize the purpose efficiently accurately measured.
Invention content
To overcome the above deficiencies, the invention provides a kind of dynamics of single-photon detector and static joint to survey
Test system and its test method, which, which succinctly efficiently combines dynamic test and static test, tests,
Dynamic and static unified debugging are realized, to achieve the purpose that determining dark current is constituted.
Technical solution is used by the present invention overcomes its technical problem：
A kind of dynamic of single-photon detector and static combined test system, including digital sourcemeter, changing device, test electricity
Road and oscillograph, avalanche diode are positioned in the incubation chamber in changing device, the cathode of avalanche diode and digital sourcemeter
The input terminal of output end connection, the anode of avalanche diode and test circuit connects, and the output waveform of avalanche diode is connected to
The output end of the input terminal of oscillograph, test circuit is connected to computer.
According to currently preferred, digital sourcemeter uses 2400 digital sourcemeters of Keithley.
The present invention also provides the tests of a kind of dynamic using above-mentioned single-photon detector and static combined test system
Method, steps are as follows：
S1, a temperature value is fixed, which is -50 DEG C~20 DEG C, and digital sourcemeter adds avalanche diode
Bias observes electric current registration, the dark counting of oscilloscope display waveform and computer acquisition on digital sourcemeter；
S2, gradually increase is biased into avalanche breakdown voltage, and the electric current at this moment shown on digital sourcemeter becomes larger, and shows simultaneously
The waveform shown on wave device starts avalanche pulse occur, and non-zero number also occurs in dark counting；Under avalanche breakdown voltage state, number
The electric current shown on the table of word source is total dark current Idark, the avalanche voltage waveform occurred on oscillograph calculated by Ohm's law
Corresponding current value is obtained, current curve is integrated, obtains single snowslide quantity of electric charge Q,
Wherein, T1At the time of representative when avalanche signal starts to occur shown by oscillograph, T2Representing avalanche signal will disappear
When it is shown at the time of；
Then S3, the numerical value n that dark counting is obtained from test circuit obtain total snowslide quantity of electric charge QaFor the single snowslide quantity of electric charge
The product of Q and dark count numerical value n, and then obtain snowslide dark current Ia,
That is, IaIt is the dark current caused by thermal noise and tunneling effect and the sum of dark current caused by afterpulse, wherein
τ is the dead time；
The test of S4, the composition for determining dark current and dark current：Have neither part nor lot in the dark current I of snowslidebMainly leaked by surface
Electric current causes, snowslide dark current IaThe mainly dark current I caused by thermal noiseth, dark current I caused by tunneling effectTATAfter and
Dark current I caused by pulsecIt constitutes；
S4.1, the dark current I for having neither part nor lot in snowslideb：
Total dark current IdarkSubtract snowslide dark current IaAs have neither part nor lot in the dark current I of snowslideb；
Dark current I caused by S4.2, thermal noiseth：
In the case where barrier width is constant, penetration coefficient is related with depletion region electric field, i.e. dark electricity caused by tunneling effect
Flow ITATIt is only related with overbias, and afterpulse can be adjusted by dead time τ, as the μ s of τ >=20, afterpulse can be ignored, because
This, can be by fixing overbias and the dead time τ of >=20 μ s being arranged, dark current I caused by tunneling effectTATIn snowslide dark current
IaIn numerical value be fixed, dark current I caused by afterpulsecIt is negligible, and then can be from IaIn isolate Ith：It is fixed
The dead time τ of >=20 μ s of overbias and setting, constantly reduces temperature, obtains the dark counting under different temperatures, is obtained after fitting dark
The relation curve with temperature T is counted, I can be obtained by dark countingaValue, and then I can be obtainedaWith the relation curve of temperature T,
Represent the I under different temperaturesaDifference be the lower thermal noise of relevant temperature variation variation, then with theoretically thermal noise curveIt is compared；
Dark current I caused by S4.3, tunneling effectTAT：
When temperature≤- 40 DEG C, dark current I caused by thermal noisethIt can ignore, at this moment can obtain tunneling effect and cause
Dark current ITATAnd dark current I caused by afterpulsec；In temperature≤- 20 DEG C, overbias >=3V, increase dead time τ extremely
>=20 μ s, can ignore electric current caused by afterpulse, you can dark current I caused by isolated tunneling effectTAT；
Dark current I caused by S4.4, afterpulsec：
According to the measurement result of step S4.2 and S4.3, pass through snowslide dark current IaSubtract dark current I caused by thermal noiseth
With dark current I caused by tunneling effectTAT, obtain dark current I caused by afterpulsec。
According to currently preferred, in the step S4.2, if obtained actual measurement thermal noise curve and theoretical thermal noise are bent
The trend of line is identical and numerical value difference within the allowable range, then illustrate that the experimental result is correct；If numerical value difference is more than to allow model
It encloses, then continues to increase the dead time, reduces temperature, then be compared, until obtaining result within the allowable range.
The beneficial effects of the invention are as follows：
Due to different temperatures, different overbias and under the different dead times, the composition of dark current can change, and the present invention passes through
A kind of simple method (i.e. dynamic test and static test are joined together) is separated, and dynamic and static united real is realized
When debug；And the composition of dark current is determined, and the method that the determination dark current is constituted is easy to implement, therefore, dark current is constituted
Not only upper theoretical calculation is experimentally also easy to prove.
Description of the drawings
Fig. 1 is the structural schematic diagram of the test system of the present invention.In figure, 1, digital sourcemeter；2, changing device；3, test electricity
Road；4, oscillograph；5, computer.
Fig. 2 is that overbias is 0.2V, the avalanche signal curve graph obtained from oscillograph after 100 times of amplifications.In figure, indulge
Coordinate is voltage, and 20mV is represented per lattice；Abscissa is the time, and 50ns is represented per lattice.
Fig. 3 is the graph of relation that overbias is dark counting and temperature T in the case of 1.5V, 2.0V, 2.5V, 3.0V.In figure,
Ordinate is dark counting；Abscissa is temperature.
Specific implementation mode
For a better understanding of the skilled in the art, being done in the following with reference to the drawings and specific embodiments to the present invention
It is further described, following be merely exemplary does not limit protection scope of the present invention.
Embodiment 1,
The dynamic of single-photon detector of the present invention and static combined test system, as shown in Figure 1, including digital source
Table 1, changing device 2, test circuit 3 and oscillograph 4, digital sourcemeter 1 use 2400 digital sourcemeters of Keithley, and oscillograph 4 is not
It needs to use more expensive current probe, directly voltage be tested, oscillograph has the impedance matching of 50 Ω, it is easy to by ohm
Law obtains curent change, and digital sourcemeter 1 can also can obtain the device of electric current with other by the way that voltage is arranged；Two pole of snowslide
Pipe is positioned in the incubation chamber in changing device 2, and the cathode of avalanche diode connect with the output end of digital sourcemeter 1, snowslide two
The anode of pole pipe is connect with the input terminal of test circuit 3, and the output waveform of avalanche diode is connected to the input terminal of oscillograph 4,
The output end of test circuit 3 is connected to computer 5 by USB.
Embodiment 2,
A kind of test method of dynamic using single-photon detector described in embodiment 1 and static combined test system,
Steps are as follows：
S1, a temperature value is fixed, which is -50 DEG C~20 DEG C, and digital sourcemeter adds avalanche diode
Bias observes electric current registration, the dark counting of oscilloscope display waveform and computer acquisition on digital sourcemeter.
S2, gradually increase is biased into avalanche breakdown voltage, and the electric current at this moment shown on digital sourcemeter becomes larger (pA-nA-
μ A), while the waveform shown on oscillograph starts avalanche pulse occur, as shown in Fig. 2, also there is non-zero number in dark counting；Snow
It collapses under breakdown voltage state, the electric current shown on digital sourcemeter is total dark current Idark, the avalanche voltage that occurs on oscillograph
Corresponding current value is calculated by Ohm's law in waveform, is integrated to current curve, obtains the single snowslide quantity of electric charge
Q,
Wherein, T1At the time of representative when avalanche signal starts to occur shown by oscillograph, T2Representing avalanche signal will disappear
When it is shown at the time of.
Then S3, the numerical value n that dark counting is obtained from test circuit obtain total snowslide quantity of electric charge QaFor the single snowslide quantity of electric charge
The product of Q and dark count numerical value n, and then obtain snowslide dark current Ia,
That is, IaIt is the dark current caused by thermal noise and tunneling effect and the sum of dark current caused by afterpulse, wherein
τ is the dead time.
S4, after above-mentioned steps S1, S2 and S3, then determine dark current composition and dark current test：Do not join
With the dark current I of snowslidebMainly caused by tracking current, snowslide dark current IaThe mainly dark current I caused by thermal noiseth、
Dark current I caused by tunneling effectTATAnd dark current I caused by afterpulsecIt constitutes.
S4.1, the dark current I for having neither part nor lot in snowslideb：
Total dark current IdarkSubtract snowslide dark current IaAs have neither part nor lot in the dark current I of snowslideb。
Dark current I caused by S4.2, thermal noiseth：
In the case where barrier width is constant, penetration coefficient is related with depletion region electric field, i.e. dark electricity caused by tunneling effect
Flow ITATIt is only related with overbias, and afterpulse can be adjusted by dead time τ, in the case that the dead time is larger, the present embodiment choosing
When taking the μ s of τ >=20, afterpulse can be ignored, and therefore, can pass through the dead time τ of >=20 μ s of fixed overbias and setting, tunnelling effect
Dark current I caused by answeringTATIn snowslide dark current IaIn numerical value be fixed, dark current I caused by afterpulsecIt can be ignored not
Meter, and then can be from IaIn isolate Ith：Fixed overbias and the dead time τ that >=20 μ s are arranged, constantly reduce temperature, obtain not
Dark counting under synthermal obtains the relation curve of dark counting and temperature T after fitting, as shown in figure 3, as can be seen from Figure 3, no
Under same overbias, increase with the raising dark counting of temperature, and with the increase of overbias, dark counting also increases；Then
I can be obtained by dark countingaValue, therefore the relation curve of dark counting and temperature T can obtain I by ordinate transformationaWith temperature
The relation curve for spending T, represents the I under different temperaturesaDifference be the lower thermal noise of relevant temperature variation variation, then with reason
By upper thermal noise curveIt is compared；If obtained actual measurement thermal noise curve becomes with theoretical thermal noise curve
Gesture is identical and numerical value difference within the allowable range, then illustrate that the experimental result is correct；If numerical value difference is more than allowable range, after
It is continuous to increase the dead time, reduce temperature, it reduces temperature and sterlin refrigerator can be selected, then be compared, until obtaining allowing model
Enclose interior result.
Dark current I caused by S4.3, tunneling effectTAT：
When temperature is especially low, the present embodiment chooses temperature≤- 40 DEG C, dark current I caused by thermal noisethIt can ignore,
At this moment dark current I caused by tunneling effect can be obtainedTATAnd dark current I caused by afterpulsec；In temperature≤- 20 DEG C, mistake
When bias >=3V, increases dead time τ to >=20 μ s, electric current caused by afterpulse can be ignored, you can isolated tunneling effect
Caused dark current ITAT。
Dark current I caused by S4.4, afterpulsec：
According to the measurement result of step S4.2 and S4.3, pass through snowslide dark current IaSubtract dark current I caused by thermal noiseth
With dark current I caused by tunneling effectTAT, obtain dark current I caused by afterpulsec.So far, tracking current has been obtained to cause
Dark current Ib, dark current I caused by thermal noiseth, dark current I caused by tunneling effectTATAnd dark current caused by afterpulse
Ic, so that it is determined that the composition of dark current.
Above only describes the basic principles and preferred embodiment of the present invention, and those skilled in the art can be according to foregoing description
Many changes and improvements are made, these changes and improvements should belong to the scope of protection of the present invention.
Claims (4)
1. a kind of dynamic of single-photon detector and static combined test system, it is characterised in that：Including digital sourcemeter（1）, become
Warm device（2）, test circuit（3）And oscillograph（4）, the test circuit（3）For measuring dark counting, avalanche diode is placed
In changing device（2）In incubation chamber in, the cathode and digital sourcemeter of avalanche diode（1）Output end connection, two pole of snowslide
The anode and test circuit of pipe（3）Input terminal connection, the output waveform of avalanche diode is connected to oscillograph（4）Input
End, test circuit（3）Output end be connected to computer（5）.
2. test system according to claim 1, it is characterised in that：Digital sourcemeter（1）Using 2400 numbers of Keithley
Source table.
3. the test method of the dynamic of single-photon detector according to claim 1 or 2 and static combined test system,
It is characterized in that, including steps are as follows：
S1, fix a temperature value, which is -50 DEG C ~ 20 DEG C, digital sourcemeter to avalanche diode biasing,
Observe electric current registration, the dark counting of oscilloscope display waveform and computer acquisition on digital sourcemeter；
S2, gradually increase is biased into avalanche breakdown voltage, and the electric current at this moment shown on digital sourcemeter becomes larger, while oscillograph
The waveform of upper display starts avalanche pulse occur, and non-zero number also occurs in dark counting；Under avalanche breakdown voltage state, digital source
The electric current shown on table is total dark currentI dark , the avalanche voltage waveform occurred on oscillograph is calculated by Ohm's law
Corresponding current value, integrates current curve, obtains single snowslide quantity of electric charge Q,
Wherein, T1At the time of representative when avalanche signal starts to occur shown by oscillograph, T2Representing avalanche signal will disappear when institute
At the time of display；
S3, the numerical value n that dark counting is obtained from test circuit, then obtain total snowslide quantity of electric chargeQ a For single snowslide quantity of electric charge Q and secretly
The product of count value n, and then obtain snowslide dark currentI a ,
That is,I a It is the dark current caused by thermal noise and tunneling effect and the sum of dark current caused by afterpulse, wherein τ is dead
Time；
The test of S4, the composition for determining dark current and dark current：Have neither part nor lot in the dark current of snowslideI b Mainly drawn by tracking current
It rises, snowslide dark currentI a The mainly dark current caused by thermal noiseI th , dark current caused by tunneling effectI TAT And afterpulse draws
The dark current risenI c It constitutes；
S4.1, the dark current for having neither part nor lot in snowslideI b ：
Total dark currentI dark Subtract snowslide dark currentI a As have neither part nor lot in the dark current of snowslideI b ；
Dark current caused by S4.2, thermal noiseI th ：
In the case where barrier width is constant, penetration coefficient is related with depletion region electric field, i.e. dark current caused by tunneling effectI TAT
It is only related with overbias, and afterpulse can be adjusted by dead time τ, as the μ s of τ >=20, afterpulse can be ignored, and therefore, can lead to
It crosses fixed overbias and the dead time τ of >=20 μ s is set, dark current caused by tunneling effectI TAT In snowslide dark currentI a In number
Value is fixed, dark current caused by afterpulseI c It is negligible, and then can be fromI a In isolateI th ：Fixed overbias and
The dead time τ of >=20 μ s is set, temperature is constantly reduced, obtains the dark counting under different temperatures, dark counting and temperature are obtained after fitting
The relation curve for spending T, it is available by dark countingI a Value, and then can obtainI a With the relation curve of temperature T, difference is represented
At a temperature ofI a Difference be the lower thermal noise of relevant temperature variation variation, then with theoretically thermal noise curveIt is compared；
Dark current caused by S4.3, tunneling effectI TAT ：
When temperature≤- 40 DEG C, dark current caused by thermal noiseI th It can ignore, at this moment can obtain dark caused by tunneling effect
Electric currentI TAT And dark current caused by afterpulseI c ；In temperature≤- 20 DEG C, overbias >=3V, increase dead time τ to >=20 μ
S can ignore electric current caused by afterpulse, you can dark current caused by isolated tunneling effectI TAT ；
Dark current caused by S4.4, afterpulseI c ：
According to the measurement result of step S4.2 and S4.3, pass through snowslide dark currentI a Subtract dark current caused by thermal noiseI th And tunnel
Wear dark current caused by effectI TAT , obtain dark current caused by afterpulseI c 。
4. test method according to claim 3, which is characterized in that in the step S4.2, if obtained actual measurement heat is made an uproar
Acoustic curve is identical as the theoretical trend of thermal noise curve and numerical value difference within the allowable range, then illustrate that the experimental result is correct；
If numerical value difference is more than allowable range, continues to increase the dead time, reduce temperature, then be compared, until obtaining allowing model
Enclose interior result.
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| CN112763880A (en) * | 2020-12-23 | 2021-05-07 | 广州广电计量检测（上海）有限公司 | Repeated avalanche tolerance test system |
| CN113686433B (en) * | 2021-08-23 | 2022-11-18 | 长飞光纤光缆股份有限公司 | Photoelectric detector and erbium-doped optical fiber amplifier based on dark current compensation |
| CN113791755B (en) * | 2021-08-24 | 2023-10-20 | 中国航天科工集团第二研究院 | Quantum random number sequence generation method, system and device |
| CN114112030A (en) * | 2021-12-06 | 2022-03-01 | 江西省纳米技术研究院 | Photoelectric detector performance testing device based on artificial intelligence |
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| CN103115688A (en) * | 2013-01-24 | 2013-05-22 | 南京大学 | Gigahertz sine gating near-infrared single photon detector with tunable frequency |
| CN203385483U (en) * | 2013-08-09 | 2014-01-08 | 西安工程大学 | Photon-number distinguishing and counting device based on multi-pixel photon counter |
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| US8754356B2 (en) * | 2010-10-06 | 2014-06-17 | Electronics And Telecommunications Research Institute | Single photon detector and photon number resolving detector |
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| CN103115688A (en) * | 2013-01-24 | 2013-05-22 | 南京大学 | Gigahertz sine gating near-infrared single photon detector with tunable frequency |
| CN203385483U (en) * | 2013-08-09 | 2014-01-08 | 西安工程大学 | Photon-number distinguishing and counting device based on multi-pixel photon counter |
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