CN109655691A - Power device degeneration monitoring method, device and system in board-level circuit - Google Patents
Power device degeneration monitoring method, device and system in board-level circuit Download PDFInfo
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
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Abstract
This application involves power device degeneration monitoring methods, device and system in a kind of board-level circuit.The described method includes: receiving the electric field induction electromotive force and magnetic field induction electromotive force of power device；According to electric field induction electromotive force and magnetic field induction electromotive force, the switching loss of power device is obtained；Based on switching loss, confirm the degraded condition of power device, to, power device degeneration monitoring method is according to the electric field induction electromotive force and magnetic field induction electromotive force of collected power device in the application board-level circuit, switching loss is obtained, and diagnoses the fault state of the power device in plate circuit according to switching loss, and then realize and be monitored to the performance of power device, when finding that possible failure occurs in power device in time to power device reparation, more serious consequence is avoided result in.
Description
Technical Field
The present application relates to the field of fault prediction and health management technologies, and in particular, to a method, an apparatus, and a system for monitoring degradation of a power device in a board level circuit.
Background
The power electronic device is also called a power semiconductor device, is mainly used for high-power electronic devices in the aspects of electric energy conversion and control circuits, is like a heart of electronic equipment, generally has the current of dozens to thousands of amperes and the voltage of hundreds of volts to thousands of volts, and is widely applied to the fields of aerospace, rail transit, new energy, household appliances and the like. Due to the complexity of the operation condition of the equipment system, the power electronic device bears unbalanced electric heating stress, and the reliability problems such as aging failure and the like are easily caused. Once a power electronic device fails, equipment system shutdown is caused to bring economic loss, and serious safety accidents may be caused in the application occasions requiring high reliability such as power grid and aviation. Therefore, reliability guarantee of the power electronic device in practical application is important.
The traditional reliability monitoring of power electronic devices has two main ways: (a) carrying out a reliability life test on the power electronic device to predict the reliability life of the product; (b) and carrying out failure analysis on the failed power electronic device, determining a failure mode and a failure mechanism of the failed power electronic device, and providing an improvement measure for the power electronic device on the basis. However, in the implementation process, the inventor finds that at least the following problems exist in the conventional technology: the traditional technology cannot accurately monitor the reliability of the power device in real time.
Disclosure of Invention
In view of the foregoing, there is a need to provide a method, an apparatus and a system for monitoring degradation of a power device in a board level circuit.
In order to achieve the above object, in one aspect, an embodiment of the present application provides a method for monitoring degradation of a power device in a board level circuit, including the following steps:
receiving electric field induced electromotive force and magnetic field induced electromotive force of a power device;
obtaining the switching loss of the power device according to the electric field induced electromotive force and the magnetic field induced electromotive force;
based on the switching losses, a degraded condition of the power device is confirmed.
In one embodiment, the step of obtaining the switching loss of the power device according to the electric field induced electromotive force and the magnetic field induced electromotive force comprises the following steps;
the time integral of the product of the electric field induced electromotive force and the magnetic field induced electromotive force was determined as the switching loss of the power device.
In one embodiment, the step of identifying a degraded condition of the power device based on the switching loss comprises:
when the ratio of the switching loss to the standard switching loss is larger than a preset threshold value, confirming that the performance of the power device is degraded; the standard switching loss is the switching loss when the power device is in a healthy state.
In one embodiment, the ratio of the switching loss to the standard switching loss is obtained based on the following equation:
wherein D represents a ratio; p (t) represents power; p is a radical of0(t) represents a standard power; v1(t) represents an electric field induced electromotive force; v2(t) represents a magnetic field induced electromotive force; v'1(t) represents the electric field induced electromotive force when the power device is in a healthy state; v'2(t) represents the magnetic field induced electromotive force when the power device is in a healthy state.
In one embodiment, the step of identifying a degraded condition of the power device based on the switching loss comprises:
and when the switching loss is larger than a preset loss threshold value, confirming that the performance of the power device is degraded.
On the other hand, the embodiment of the present application further provides a degradation monitoring device for a power device in a board level circuit, including:
the electromotive force receiving module is used for receiving electric field induced electromotive force and magnetic field induced electromotive force of the power device;
the switching loss acquisition module is used for acquiring the switching loss of the power device according to the electric field induced electromotive force and the magnetic field induced electromotive force;
and the degradation condition confirming module is used for confirming the degradation condition of the power device based on the switching loss.
On the other hand, the embodiment of the application also provides a degradation monitoring system for a power device in a board level circuit, which comprises a first acquisition circuit, a second acquisition circuit and a signal processing circuit;
the first acquisition circuit is connected with the signal processing circuit and is arranged on one side of a lead connected with a drain electrode of the power device; the second acquisition circuit is connected with the signal processing circuit and is arranged on one side of a lead connected with the drain electrode of the power device;
the first acquisition circuit is used for acquiring induced electromotive force of an electric field; the second acquisition circuit is used for acquiring induced electromotive force of the magnetic field;
the signal processing circuit is used for realizing the degradation monitoring method of the power device in the board level circuit.
In one embodiment, the first acquisition circuit is a coupled capacitance sensor; the second acquisition circuit is an electromagnetic voltage mutual inductance sensor; the signal processing circuit is a system-on-chip of the board-level circuit.
In one embodiment, the device further comprises an alarm circuit;
the alarm circuit is connected with the signal processing circuit.
In yet another aspect, an embodiment of the present application further provides a computer-readable storage medium, on which a computer program is stored, and the computer program, when executed by a processor, implements the steps of the above method.
One of the above technical solutions has the following advantages and beneficial effects:
receiving electric field induced electromotive force and magnetic field induced electromotive force of the power device; obtaining the switching loss of the power device according to the electric field induced electromotive force and the magnetic field induced electromotive force; the degradation condition of the power device is confirmed based on the switching loss, so that the degradation monitoring method of the power device in the plate-level circuit obtains the switching loss according to the collected electric field induced electromotive force and magnetic field induced electromotive force of the power device, diagnoses the fault condition of the power device in the plate-level circuit according to the switching loss, further realizes monitoring of the performance of the power device, timely repairs the power device when possible faults of the power device are found, and avoids serious consequences.
Drawings
FIG. 1 is a first flowchart of a method for monitoring degradation of a power device in a board level circuit according to an embodiment of the present invention;
FIG. 2 is a second flowchart of a method for monitoring degradation of a power device in a board-level circuit according to an embodiment of the present disclosure;
FIG. 3 is a block diagram of a degradation monitoring device for power devices in a board-level circuit according to an embodiment of the present invention;
FIG. 4 is a block diagram of the structure of a degradation status validation module in one embodiment;
FIG. 5 is a block diagram of a system for monitoring degradation of a power device in a board level circuit according to an embodiment of the present application;
FIG. 6 is a schematic diagram of an embodiment of a planar coupled capacitive sensor;
FIG. 7 is a schematic diagram of a planar electromagnetic voltage transformer sensor according to an embodiment;
fig. 8 is a schematic structural diagram of a three-dimensional electromagnetic voltage mutual inductance sensor according to an embodiment.
Detailed Description
In order to make the objects, technical solutions and advantages of the present application more apparent, the present application is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the present application and are not intended to limit the present application.
In order to solve the problem that the reliability of the power device cannot be accurately monitored in real time in the conventional technology, in an embodiment, as shown in fig. 1, a method for monitoring the degradation of the power device in a board level circuit is provided, which includes the following steps:
step S110 receives the electric field induced electromotive force and the magnetic field induced electromotive force of the power device.
The power device is a power device on a plate electrode circuit, for example, a power device on a printed circuit board. During the operation of the plate electrode circuit, the power device is continuously switched between the on state and the off state, so that the current and the voltage on a wire between the power device and the drain electrode of the power device are continuously changed, the changed current can generate a changed magnetic field around the wire, and the changed voltage causes the electric field around the wire to change. The electric field induced electromotive force is acquired by utilizing a first acquisition circuit capable of inducing the change of the electric field, namely the electric field induced electromotive force is generated by the electric field capable of inducing the change. The magnetic field induced electromotive force is acquired by a second acquisition circuit capable of inducing the change of the magnetic field, namely the magnetic field induced electromotive force is generated by the magnetic field induced by the change.
And step S120, obtaining the switching loss of the power device according to the electric field induced electromotive force and the magnetic field induced electromotive force.
In a specific embodiment, the step of obtaining the switching loss of the power device according to the electric field induced electromotive force and the magnetic field induced electromotive force;
the time integral of the product of the electric field induced electromotive force and the magnetic field induced electromotive force was determined as the switching loss of the power device.
It should be noted that, in the process of continuously switching the power device between on and off, the electric field induced electromotive force collected by the first collecting circuit is proportional to v of the voltage on the drain wire of the power device connected to the first collecting circuit0(t); the magnetic field induced electromotive force collected by the second collecting circuit is proportional to i of the current on the drain wire of the power device connected with the second collecting circuit0(t)。
Specifically, the switching loss is obtained based on the following formula:
wherein,representing the switching power. Therefore, the switching loss obtainable by this formula is proportional to the real switching loss of the power device. The switching loss obtained by this formula is proportional to the real switching loss on the drain conductor of the power device connected thereto.
Step S130, confirming a degradation condition of the power device based on the switching loss.
It should be noted that as the power device degrades, the switching loss of the power device gradually increases. Therefore, the degradation condition of the power device can be judged according to the switching loss acquired by the method, and the larger the switching loss is, the more serious the loss of the power device is.
In a specific embodiment, the step of identifying a degraded condition of the power device based on the switching loss comprises:
and when the switching loss is larger than a preset loss threshold value, confirming that the performance of the power device is degraded.
The preset loss threshold is obtained by properly scaling down the real loss power of the power device.
In each embodiment of the degradation monitoring method for the power device in the board-level circuit, the electric field induced electromotive force and the magnetic field induced electromotive force of the power device are received; obtaining the switching loss of the power device according to the electric field induced electromotive force and the magnetic field induced electromotive force; the degradation condition of the power device is confirmed based on the switching loss, so that the degradation monitoring method of the power device in the plate-level circuit obtains the switching loss according to the collected electric field induced electromotive force and magnetic field induced electromotive force of the power device, diagnoses the fault condition of the power device in the plate-level circuit according to the switching loss, further realizes monitoring of the performance of the power device, timely repairs the power device when possible faults of the power device are found, and avoids serious consequences.
In one embodiment, as shown in fig. 2, a method for monitoring degradation of a power device in a board level circuit includes the following steps:
step S210, receiving electric field induced electromotive force and magnetic field induced electromotive force of a power device;
step S220, the time integral of the product of the electric field induced electromotive force and the magnetic field induced electromotive force is confirmed as the switching loss of the power device;
step S230, when the ratio of the switching loss to the standard switching loss is larger than a preset threshold value, confirming that the performance of the power device is degraded; the standard switching loss is the switching loss when the power device is in a healthy state.
It should be noted that step S210 is the same as step S110 in the above embodiments of the present application, and is not described herein again.
The standard switching loss is the switching loss of the power device in a healthy state. Specifically, the electric field induced electromotive force when utilizing first acquisition circuit to gather power device in health condition, the magnetic field induced electromotive force when utilizing second acquisition circuit to gather power device in health condition adopts the same course of treatment with this application acquisition switching loss afterwards, acquires standard switching loss.
And judging whether the performance of the power device is degraded or not by using the ratio of the switching loss to the standard switching loss, wherein the larger the ratio is, the more serious the performance degradation of the power device is.
In one embodiment, the ratio of the switching loss to the standard switching loss is obtained based on the following equation:
wherein D represents a ratio; p (t) represents power; p is a radical of0(t) represents a standard power; v1(t) represents an electric field induced electromotive force; v2(t) represents a magnetic field induced electromotive force; v'1(t) represents the electric field induced electromotive force when the power device is in a healthy state; v'2(t) represents the magnetic field induced electromotive force when the power device is in a healthy state. The power p (t) is obtained by magnetic field induced electromotive force and electric field induced electromotive force, and the standard power p0And (t) is the power when the power device is in a healthy state.
Specifically, in one example, on the premise that a system formed by a wire connecting the drain of the power device and the first acquisition circuit is a linear time-invariant system, and a system formed by a wire connecting the drain of the power device and the second acquisition circuit is a linear time-invariant system, the ratio of the switching loss to the standard switching loss is obtained based on the following processes:
V1(t)→V′1(t)
V2(t)→V′2(t)
standard power at the healthy state of the device at this time:
p0(t)＝i0(t)*v0(t)
according to the superposition characteristic and the uniform characteristic of the linear time-invariant system:
I(t)＝i0(t)*a→V1(t)＝V′1(t)*a
V(t)＝v0(t)*b→V2(t)＝V′2(t)*b
power at the time of device degradation:
p(t)＝I(t)*V(t)
power to standard power ratio:
further, electric field induced electromotive force and magnetic field induced electromotive force of T time can be collected, the integral of the product of the field induced electromotive force and the magnetic field induced electromotive force in the T time is calculated to obtain switching loss, and the degradation condition of the device is judged according to the switching loss in the healthy state and the degradation state in the T time, specifically:
in each embodiment of the degradation monitoring method for the power device in the board-level circuit, the ratio of the switching loss to the standard switching loss is used as a criterion for determining whether the performance of the power device is degraded or not, so that errors caused by the fact that the real switching loss of the power device cannot be acquired are avoided, the degradation condition of the power device is monitored more accurately, and the method is more beneficial to maintaining the power device.
It should be understood that although the various steps in the flowcharts of fig. 1 and 2 are shown in order as indicated by the arrows, the steps are not necessarily performed in order as indicated by the arrows. The steps are not performed in the exact order shown and described, and may be performed in other orders, unless explicitly stated otherwise. Moreover, at least some of the steps in fig. 1 or 2 may include multiple sub-steps or multiple stages that are not necessarily performed at the same time, but may be performed at different times, and the order of performing the sub-steps or stages is not necessarily sequential, but may be performed alternately or alternately with other steps or at least some of the sub-steps or stages of other steps.
In one embodiment, as shown in fig. 3, there is provided a device for monitoring degradation of a power device in a board level circuit, including:
an electromotive force receiving module 310, configured to receive an electric field induced electromotive force and a magnetic field induced electromotive force of the power device;
the switching loss obtaining module 320 is configured to obtain a switching loss of the power device according to the electric field induced electromotive force and the magnetic field induced electromotive force;
and a degradation condition confirmation module 330 for confirming a degradation condition of the power device based on the switching loss.
In one embodiment, as shown in fig. 4, a degradation monitoring apparatus for power devices in board level circuits, the degradation condition determining module includes:
a first performance degradation determining module 410, configured to determine that performance degradation occurs in the power device when a ratio of the switching loss to the standard switching loss is greater than a preset threshold; the standard switching loss is the switching loss when the power device is in a healthy state.
In one embodiment, as shown in fig. 4, a degradation monitoring apparatus for a power device in a board level circuit, the degradation condition determining module further includes:
and a second performance degradation determination module 420, configured to determine that performance degradation occurs in the power device when the switching loss is greater than a preset loss threshold.
For specific limitations of the device for monitoring degradation of a power device in a board-level circuit, reference may be made to the above limitations on the method for monitoring degradation of a power device in a board-level circuit, which are not described herein again. The modules in the degradation monitoring device for the power device in the board-level circuit can be wholly or partially realized by software, hardware and a combination thereof. The modules can be embedded in a hardware form or independent from a processor in the computer device, and can also be stored in a memory in the computer device in a software form, so that the processor can call and execute operations corresponding to the modules.
In one embodiment, as shown in fig. 5, there is also provided a system for monitoring degradation of a power device in a board level circuit, including a first acquisition circuit 11, a second acquisition circuit 13, and a signal processing circuit 15;
the first acquisition circuit 11 is connected with the signal processing circuit 15 and is arranged on one side of a lead connected with the drain of the power device 171; the second acquisition circuit 13 is connected with the signal processing circuit 15 and is arranged on one side of a wire connected with the drain electrode of the power device 171;
the first acquisition circuit 11 is used for acquiring electric field induced electromotive force; the second acquisition circuit 13 is used for acquiring induced electromotive force of the magnetic field;
the signal processing circuit 15 is used for implementing a degradation monitoring method for a power device in a board level circuit according to the embodiment of the present application.
Further, the first acquisition circuit 11 is a coupling capacitance sensor; the second acquisition circuit 13 is an electromagnetic voltage mutual inductance sensor; the signal processing circuit 15 is a system-on-chip of a board-level circuit.
Further, an alarm circuit 19 is also included;
the alarm circuit 19 is connected to the signal processing circuit 15.
The power device 171 is a power device on board level circuit 17. The system for monitoring the degradation of the power device in the board-level circuit is arranged on a board-level circuit 17.
The coupling capacitance sensor may be a planar coupling capacitance sensor (as shown in fig. 6) or a three-dimensional coupling capacitance sensor. The mutual electromagnetic voltage sensor may be a planar mutual electromagnetic voltage sensor (as shown in fig. 7) or a three-dimensional mutual electromagnetic voltage sensor (as shown in fig. 8).
The system level chip is arranged on the board level circuit, and the system level chip arranged on the board level circuit is utilized to construct the degradation monitoring system of the power device in the board level circuit, so that the cost control is facilitated, and the resource saving is also facilitated. The function of the system-level chip is to extract the characteristics of the received current signal and voltage signal to obtain characteristic data, and predict in real time according to the characteristic data to obtain a reliability prediction result.
The alarm circuit can be a sound alarm, a light alarm and the like, and can send out a prompt to remind related personnel when confirming that the performance of the power device returns.
In each embodiment of the degradation monitoring system for the power device in the board-level circuit, the adopted sensors belong to non-contact, can be directly arranged on the board-level circuit, are controlled by using a system-level chip on the board-level circuit board, acquire degradation information of the power device, can sense the degradation of the power device on line in real time and give an alarm, and are low in cost, easy to integrate and easy to popularize and apply.
In one embodiment, a computer-readable storage medium is provided, having a computer program stored thereon, which when executed by a processor, performs the steps of:
receiving electric field induced electromotive force and magnetic field induced electromotive force of a power device;
obtaining the switching loss of the power device according to the electric field induced electromotive force and the magnetic field induced electromotive force;
based on the switching losses, a degraded condition of the power device is confirmed.
In one embodiment, the computer program when executed by the processor further performs the steps of:
when the ratio of the switching loss to the standard switching loss is larger than a preset threshold value, confirming that the performance of the power device is degraded; the standard switching loss is the switching loss when the power device is in a healthy state.
In one embodiment, the computer program when executed by the processor further performs the steps of:
and when the switching loss is larger than a preset loss threshold value, confirming that the performance of the power device is degraded.
In one embodiment, the computer program when executed by the processor further performs the steps of:
the time integral of the product of the magnetic field induced electromotive force and the electric field induced electromotive force was determined as the switching loss of the power device.
It will be understood by those skilled in the art that all or part of the processes of the methods of the embodiments described above can be implemented by hardware instructions of a computer program, which can be stored in a non-volatile computer-readable storage medium, and when executed, can include the processes of the embodiments of the methods described above. Any reference to memory, storage, database, or other medium used in the embodiments provided herein may include non-volatile and/or volatile memory, among others. Non-volatile memory can include read-only memory (ROM), Programmable ROM (PROM), Electrically Programmable ROM (EPROM), Electrically Erasable Programmable ROM (EEPROM), or flash memory. Volatile memory can include Random Access Memory (RAM) or external cache memory. By way of illustration and not limitation, RAM is available in a variety of forms such as Static RAM (SRAM), Dynamic RAM (DRAM), Synchronous DRAM (SDRAM), Double Data Rate SDRAM (DDRSDRAM), Enhanced SDRAM (ESDRAM), Synchronous Link DRAM (SLDRAM), Rambus Direct RAM (RDRAM), direct bus dynamic RAM (DRDRAM), and memory bus dynamic RAM (RDRAM).
The technical features of the above embodiments can be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the above embodiments are not described, but should be considered as the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only express several embodiments of the present application, and the description thereof is more specific and detailed, but not construed as limiting the claims. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the concept of the present application, which falls within the scope of protection of the present application. Therefore, the protection scope of the present patent shall be subject to the appended claims.
Claims (10)
1. A degradation monitoring method for a power device in a board level circuit is characterized by comprising the following steps:
receiving electric field induced electromotive force and magnetic field induced electromotive force of a power device;
obtaining the switching loss of the power device according to the electric field induced electromotive force and the magnetic field induced electromotive force;
confirming a degraded condition of the power device based on the switching loss.
2. The method for monitoring degradation of a power device in a board level circuit according to claim 1, wherein the step of obtaining the switching loss of the power device according to the electric field induced electromotive force and the magnetic field induced electromotive force;
and determining the time integral of the product of the electric field induced electromotive force and the magnetic field induced electromotive force as the switching loss of the power device.
3. The method according to claim 1 or 2, wherein the step of confirming the degradation condition of the power device based on the switching loss comprises:
when the ratio of the switching loss to the standard switching loss is larger than a preset threshold value, confirming that the performance of the power device is degraded; the standard switching loss is the switching loss when the power device is in a healthy state.
4. The method according to claim 3, wherein in the step of confirming that the performance of the power device is degraded when the ratio of the switching loss to the standard switching loss is greater than a preset threshold, the ratio of the switching loss to the standard switching loss is obtained based on the following formula:
wherein D represents the ratio; p (t) represents power; p is a radical of0(t) represents a standard power; v1(t) represents the electric field induced electromotive force; v2(t) represents the magnetic field induced electromotive force; v'1(t) represents an electric field induced electromotive force when the power device is in a healthy state; v'2(t) represents the magnetic field induced electromotive force when the power device is in a healthy state.
5. The method according to claim 1 or 2, wherein the step of confirming the degradation condition of the power device based on the switching loss comprises:
and when the switching loss is larger than a preset loss threshold value, confirming that the performance of the power device is degraded.
6. A degradation monitoring device for a power device in a board level circuit is characterized by comprising:
the electromotive force receiving module is used for receiving electric field induced electromotive force and magnetic field induced electromotive force of the power device;
the switching loss acquisition module is used for acquiring the switching loss of the power device according to the electric field induced electromotive force and the magnetic field induced electromotive force;
a degradation condition confirmation module for confirming a degradation condition of the power device based on the switching loss.
7. A degradation monitoring system for a power device in a board level circuit is characterized by comprising a first acquisition circuit, a second acquisition circuit and a signal processing circuit;
the first acquisition circuit is connected with the signal processing circuit and is arranged on one side of a lead connected with a drain electrode of the power device; the second acquisition circuit is connected with the signal processing circuit and is arranged on one side of a lead connected with a drain electrode of the power device;
the first acquisition circuit is used for acquiring induced electromotive force of an electric field; the second acquisition circuit is used for acquiring induced electromotive force of the magnetic field;
the signal processing circuit is used for realizing the degradation monitoring method of the power device in the board-level circuit as claimed in any one of claims 1 to 5.
8. The system of claim 7, wherein the first collection circuit is a coupling capacitance sensor; the second acquisition circuit is an electromagnetic voltage mutual inductance sensor; the signal processing circuit is a system-level chip of a board-level circuit.
9. The system for monitoring degradation of a power device in a board level circuit according to claim 7 or 8, further comprising an alarm circuit;
the alarm circuit is connected with the signal processing circuit.
10. A computer-readable storage medium, on which a computer program is stored, which, when being executed by a processor, carries out the steps of the method according to any one of claims 1 to 5.
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