CN101089642B - Method of accelerating hot carrier injection investigating - Google Patents
Method of accelerating hot carrier injection investigating Download PDFInfo
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- CN101089642B CN101089642B CN 200610027696 CN200610027696A CN101089642B CN 101089642 B CN101089642 B CN 101089642B CN 200610027696 CN200610027696 CN 200610027696 CN 200610027696 A CN200610027696 A CN 200610027696A CN 101089642 B CN101089642 B CN 101089642B
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CN 200610027696 CN101089642B (en) | 2006-06-13 | 2006-06-13 | Method of accelerating hot carrier injection investigating |
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CN 200610027696 CN101089642B (en) | 2006-06-13 | 2006-06-13 | Method of accelerating hot carrier injection investigating |
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CN101089642A CN101089642A (en) | 2007-12-19 |
CN101089642B true CN101089642B (en) | 2012-08-22 |
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CN 200610027696 Expired - Fee Related CN101089642B (en) | 2006-06-13 | 2006-06-13 | Method of accelerating hot carrier injection investigating |
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Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101469850A (en) | 2007-12-25 | 2009-07-01 | 富士迈半导体精密工业(上海)有限公司 | Solid-state lighting lamp |
CN101271143B (en) * | 2008-03-25 | 2012-12-05 | 上海集成电路研发中心有限公司 | Method for testing hot carrier injection into MOS device |
CN101587162B (en) * | 2008-05-23 | 2011-08-24 | 中芯国际集成电路制造(北京)有限公司 | Method for detecting hot carrier effect of semiconductor device |
CN101303390B (en) * | 2008-06-23 | 2013-03-06 | 上海集成电路研发中心有限公司 | Method for judging MOS device performance degeneration |
CN101726695B (en) * | 2008-10-17 | 2011-12-28 | 和舰科技(苏州)有限公司 | Method for testing service life of NMOS hot carrier injection |
CN102236063B (en) * | 2010-04-21 | 2013-08-07 | 中国科学院微电子研究所 | Method for predicting service life of hot carrier of silicon-on-insulator device |
CN103063995B (en) * | 2011-10-21 | 2015-02-11 | 北京大学 | Method for predicating reliability service life of silicon on insulator (SOI) metal-oxide -semiconductor field effect transistor (MOSFET) device |
US9086448B2 (en) | 2011-10-21 | 2015-07-21 | Peking University | Method for predicting reliable lifetime of SOI mosfet device |
CN102495345B (en) * | 2011-12-06 | 2015-11-18 | 上海集成电路研发中心有限公司 | Determine the method for hot carrier in jection device lifetime |
CN103852700B (en) * | 2012-11-29 | 2016-08-03 | 无锡华润上华半导体有限公司 | A kind of method of testing of LDMOS device hot carrier injection effect |
CN103941172B (en) * | 2013-01-22 | 2016-12-28 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor test apparatus and method of testing |
CN104977519B (en) * | 2014-04-11 | 2017-11-24 | 中芯国际集成电路制造(上海)有限公司 | A kind of method for testing device hot carrier injection effect |
CN106533406B (en) * | 2016-11-10 | 2019-06-07 | 中国电子产品可靠性与环境试验研究所 | Metal-oxide-semiconductor parameter degradation circuit, test circuit and early warning circuit |
CN113394124A (en) | 2020-03-13 | 2021-09-14 | 长鑫存储技术有限公司 | Method for evaluating hot carrier effect of device |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1564315A (en) * | 2004-03-23 | 2005-01-12 | 中国科学院上海技术物理研究所 | Device and method for measuring movability of semiconductor excess carrier and diffusion length |
CN1588104A (en) * | 2004-08-19 | 2005-03-02 | 信息产业部电子第五研究所 | MOS device hot carrier injection effect measuring method |
CN1716559A (en) * | 2004-06-28 | 2006-01-04 | 中芯国际集成电路制造(上海)有限公司 | Detecting structure for simultaneously detecting hot carriers of multiple metal-oxide-semiconductor device |
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2006
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1564315A (en) * | 2004-03-23 | 2005-01-12 | 中国科学院上海技术物理研究所 | Device and method for measuring movability of semiconductor excess carrier and diffusion length |
CN1716559A (en) * | 2004-06-28 | 2006-01-04 | 中芯国际集成电路制造(上海)有限公司 | Detecting structure for simultaneously detecting hot carriers of multiple metal-oxide-semiconductor device |
CN1588104A (en) * | 2004-08-19 | 2005-03-02 | 信息产业部电子第五研究所 | MOS device hot carrier injection effect measuring method |
Non-Patent Citations (3)
Title |
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CN 1716559 A,全文. |
郑茳,魏同立,冯耀兰,孟江生.低温微电子器件和电路——低温 MOS 器件的研究.低温与超导17 3.1989,17(3),12-22. |
郑茳,魏同立,冯耀兰,孟江生.低温微电子器件和电路——低温 MOS 器件的研究.低温与超导17 3.1989,17(3),12-22. * |
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CN101089642A (en) | 2007-12-19 |
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Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING Effective date: 20121109 |
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Effective date of registration: 20121109 Address after: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Patentee after: Semiconductor Manufacturing International (Shanghai) Corporation Patentee after: Semiconductor Manufacturing International (Beijing) Corporation Address before: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Patentee before: Semiconductor Manufacturing International (Shanghai) Corporation Effective date of registration: 20121109 Address after: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Patentee after: Semiconductor Manufacturing International (Shanghai) Corporation Patentee after: Semiconductor Manufacturing International (Beijing) Corporation Address before: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Patentee before: Semiconductor Manufacturing International (Shanghai) Corporation |
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