CN101295772B - 发光器件的制造方法 - Google Patents

发光器件的制造方法 Download PDF

Info

Publication number
CN101295772B
CN101295772B CN200810090709.XA CN200810090709A CN101295772B CN 101295772 B CN101295772 B CN 101295772B CN 200810090709 A CN200810090709 A CN 200810090709A CN 101295772 B CN101295772 B CN 101295772B
Authority
CN
China
Prior art keywords
substrate
organic compound
compound layer
layer
vapor deposition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN200810090709.XA
Other languages
English (en)
Chinese (zh)
Other versions
CN101295772A (zh
Inventor
池田寿雄
青山智哉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Publication of CN101295772A publication Critical patent/CN101295772A/zh
Application granted granted Critical
Publication of CN101295772B publication Critical patent/CN101295772B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/18—Deposition of organic active material using non-liquid printing techniques, e.g. thermal transfer printing from a donor sheet
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/80—Manufacture or treatment specially adapted for the organic devices covered by this subclass using temporary substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H10K85/341—Transition metal complexes, e.g. Ru(II)polypyridine complexes
    • H10K85/342—Transition metal complexes, e.g. Ru(II)polypyridine complexes comprising iridium

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)
CN200810090709.XA 2007-04-27 2008-03-31 发光器件的制造方法 Expired - Fee Related CN101295772B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-119996 2007-04-27
JP2007119996 2007-04-27

Publications (2)

Publication Number Publication Date
CN101295772A CN101295772A (zh) 2008-10-29
CN101295772B true CN101295772B (zh) 2012-09-05

Family

ID=39887457

Family Applications (1)

Application Number Title Priority Date Filing Date
CN200810090709.XA Expired - Fee Related CN101295772B (zh) 2007-04-27 2008-03-31 发光器件的制造方法

Country Status (4)

Country Link
US (1) US8431432B2 (enExample)
JP (2) JP5166942B2 (enExample)
CN (1) CN101295772B (enExample)
TW (1) TWI477195B (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5325471B2 (ja) * 2007-07-06 2013-10-23 株式会社半導体エネルギー研究所 発光装置の作製方法
JP5416987B2 (ja) * 2008-02-29 2014-02-12 株式会社半導体エネルギー研究所 成膜方法及び発光装置の作製方法
JP2009231277A (ja) * 2008-02-29 2009-10-08 Semiconductor Energy Lab Co Ltd 製造装置
JP5238544B2 (ja) * 2008-03-07 2013-07-17 株式会社半導体エネルギー研究所 成膜方法及び発光装置の作製方法
US8409672B2 (en) * 2008-04-24 2013-04-02 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing evaporation donor substrate and method of manufacturing light-emitting device
JP2011009517A (ja) * 2009-06-26 2011-01-13 Konica Minolta Holdings Inc 有機エレクトロルミネッセンス素子
US8651912B2 (en) 2009-07-02 2014-02-18 Sharp Kabushiki Kaisha Organic EL element, method for manufacturing the same, and organic EL lighting apparatus
BR112012024237A2 (pt) 2010-03-25 2019-05-28 Olive Medical Corp sistema e método para fornecer um dispositivo de imageamento de utilização única para aplicações medicas
US9299942B2 (en) 2012-03-30 2016-03-29 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, display device, electronic appliance, and lighting device
CN103247667B (zh) * 2013-05-29 2015-12-02 深圳市华星光电技术有限公司 Oled面板及其制作方法与封装效果的检测方法
TWI666803B (zh) * 2014-09-17 2019-07-21 日商日鐵化學材料股份有限公司 有機電場發光元件及其製造方法
CN104762599A (zh) * 2015-04-15 2015-07-08 京东方科技集团股份有限公司 蒸镀方法和蒸镀装置
CN106910844B (zh) * 2015-12-22 2019-03-26 昆山工研院新型平板显示技术中心有限公司 Tft基板的蒸镀方法
US11047466B1 (en) 2016-02-02 2021-06-29 Nsk Ltd. Worm wheel, worm decelerator, and method for producing worm wheel
CN107346728A (zh) * 2016-05-05 2017-11-14 上海芯晨科技有限公司 一种大尺寸硅衬底iii族氮化物外延生长方法
CN106920900B (zh) * 2017-04-05 2018-10-19 武汉华星光电技术有限公司 一种oled中发光层原料的处理方法及应用
CN118130194B (zh) * 2024-03-08 2024-09-27 四川轻化工大学 一种顶空法荧光可视化快速检测血氨的试剂盒制备及检测方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1336411A (zh) * 2000-05-19 2002-02-20 伊斯曼柯达公司 使用预掺杂的材料制备一种有机发光器件的方法
CN1441080A (zh) * 2002-02-25 2003-09-10 株式会社半导体能源研究所 发光器件制作系统和制作方法
US20050056969A1 (en) * 2003-09-16 2005-03-17 Eastman Kodak Company Forming homogeneous mixtures of organic materials for physical vapor deposition using a solvent
US20060110526A1 (en) * 2004-11-19 2006-05-25 Eastman Kodak Company Organic materials for an evaporation source

Family Cites Families (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5688551A (en) 1995-11-13 1997-11-18 Eastman Kodak Company Method of forming an organic electroluminescent display panel
JP3831968B2 (ja) 1996-02-23 2006-10-11 ソニー株式会社 光学的素子の製造方法
KR100195175B1 (ko) 1996-12-23 1999-06-15 손욱 유기전자발광소자 유기박막용 도너필름, 이를 이용한 유기전자발광소자의 제조방법 및 그 방법에 따라 제조된 유기전자발광소자
US5937272A (en) 1997-06-06 1999-08-10 Eastman Kodak Company Patterned organic layers in a full-color organic electroluminescent display array on a thin film transistor array substrate
US6592933B2 (en) 1997-10-15 2003-07-15 Toray Industries, Inc. Process for manufacturing organic electroluminescent device
US7090890B1 (en) 1998-04-13 2006-08-15 The Trustees Of Princeton University Modification of polymer optoelectronic properties after film formation by impurity addition or removal
JP3175733B2 (ja) * 1998-06-17 2001-06-11 日本電気株式会社 有機ｅｌ素子の製造方法
US6165543A (en) * 1998-06-17 2000-12-26 Nec Corporation Method of making organic EL device and organic EL transfer base plate
US6114088A (en) 1999-01-15 2000-09-05 3M Innovative Properties Company Thermal transfer element for forming multilayer devices
DE60031729T2 (de) * 1999-05-13 2007-09-06 The Trustees Of Princeton University Lichtemittierende, organische, auf elektrophosphoreszenz basierende anordnung mit sehr hoher quantenausbeute
US6242152B1 (en) 2000-05-03 2001-06-05 3M Innovative Properties Thermal transfer of crosslinked materials from a donor to a receptor
KR20010104215A (ko) 2000-05-12 2001-11-24 야마자끼 순페이 발광장치 제작방법
TW519770B (en) 2001-01-18 2003-02-01 Semiconductor Energy Lab Light emitting device and manufacturing method thereof
CN100430515C (zh) 2001-02-01 2008-11-05 株式会社半导体能源研究所 沉积装置和沉积方法
JP2002324669A (ja) * 2001-04-24 2002-11-08 Nippon Seiki Co Ltd 有機電界発光素子
JP4006266B2 (ja) * 2001-06-15 2007-11-14 キヤノン株式会社 発光素子及び発光素子の製造方法
US6797314B2 (en) * 2001-07-03 2004-09-28 Eastman Kodak Company Method of handling organic material in making an organic light-emitting device
CN1127576C (zh) 2001-09-17 2003-11-12 桂林正翰科技开发有限责任公司 一种糖汁脱色方法
US6566032B1 (en) * 2002-05-08 2003-05-20 Eastman Kodak Company In-situ method for making OLED devices that are moisture or oxygen-sensitive
JP4634698B2 (ja) 2002-05-17 2011-02-16 株式会社半導体エネルギー研究所 蒸着装置
TWI336905B (en) 2002-05-17 2011-02-01 Semiconductor Energy Lab Evaporation method, evaporation device and method of fabricating light emitting device
US20040067302A1 (en) * 2002-10-08 2004-04-08 Eastman Kodak Company Laser thermal transfer gap control for oled manufacturing
JP4261923B2 (ja) * 2003-01-16 2009-05-13 キヤノン株式会社 金属配位化合物を用いた発光素子
JP4401665B2 (ja) 2003-03-20 2010-01-20 株式会社半導体エネルギー研究所 電界発光素子
US7485337B2 (en) 2004-05-27 2009-02-03 Eastman Kodak Company Depositing an organic layer for use in OLEDs
KR100667067B1 (ko) * 2004-09-08 2007-01-10 삼성에스디아이 주식회사 레이저 전사용 도너 기판 및 그 기판을 사용하여 제조되는유기 전계 발광 소자
KR100721565B1 (ko) * 2004-11-17 2007-05-23 삼성에스디아이 주식회사 저분자 유기 전계 발광 소자 및 그의 제조 방법
US20060273713A1 (en) 2005-06-02 2006-12-07 Eastman Kodak Company Process for making an organic light-emitting device
JP4789551B2 (ja) 2005-09-06 2011-10-12 株式会社半導体エネルギー研究所 有機ｅｌ成膜装置
US7842341B2 (en) * 2005-11-10 2010-11-30 Global Oled Technology Llc Purifying organic materials for physical vapor deposition
US20080074034A1 (en) * 2006-09-22 2008-03-27 Jou Jwo-Huei Organic Light Emitting Diode Device and Light Emitting Layer Manufacture Method Thereof
WO2008069259A1 (en) 2006-12-05 2008-06-12 Semiconductor Energy Laboratory Co., Ltd. Film formation apparatus, film formation method, manufacturing apparatus, and method for manufacturing light-emitting device
US8367152B2 (en) 2007-04-27 2013-02-05 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of light-emitting device
US8119204B2 (en) 2007-04-27 2012-02-21 Semiconductor Energy Laboratory Co., Ltd. Film formation method and method for manufacturing light-emitting device
JP5325471B2 (ja) 2007-07-06 2013-10-23 株式会社半導体エネルギー研究所 発光装置の作製方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1336411A (zh) * 2000-05-19 2002-02-20 伊斯曼柯达公司 使用预掺杂的材料制备一种有机发光器件的方法
CN1441080A (zh) * 2002-02-25 2003-09-10 株式会社半导体能源研究所 发光器件制作系统和制作方法
US20050056969A1 (en) * 2003-09-16 2005-03-17 Eastman Kodak Company Forming homogeneous mixtures of organic materials for physical vapor deposition using a solvent
US20060110526A1 (en) * 2004-11-19 2006-05-25 Eastman Kodak Company Organic materials for an evaporation source

Also Published As

Publication number Publication date
TW200904242A (en) 2009-01-16
JP2013084613A (ja) 2013-05-09
JP5166942B2 (ja) 2013-03-21
JP2008293961A (ja) 2008-12-04
CN101295772A (zh) 2008-10-29
US20080268561A1 (en) 2008-10-30
TWI477195B (zh) 2015-03-11
US8431432B2 (en) 2013-04-30

Similar Documents

Publication Publication Date Title
JP5166942B2 (ja) 発光装置の作製方法
JP5165452B2 (ja) 成膜方法及び発光装置の作製方法
CN101271869B (zh) 发光器件的制造方法
TWI500787B (zh) 沈積方法與發光裝置的製造方法
KR101466232B1 (ko) 발광 장치의 제조 방법
JP5190253B2 (ja) 混合層の作製方法、発光装置の作製方法
KR101547168B1 (ko) 발광 장치의 제작 방법 및 증착용 기판
CN101314841B (zh) 制造装置及发光装置的制造方法
KR101457653B1 (ko) 성막장치, 제조장치, 성막방법, 및 발광장치의 제조방법
US7919340B2 (en) Method for manufacturing light-emitting device
KR20090041314A (ko) 증착용 기판 및 발광장치의 제조방법

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20120905