CN101295772B - 发光器件的制造方法 - Google Patents

发光器件的制造方法 Download PDF

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Publication number
CN101295772B
CN101295772B CN200810090709.XA CN200810090709A CN101295772B CN 101295772 B CN101295772 B CN 101295772B CN 200810090709 A CN200810090709 A CN 200810090709A CN 101295772 B CN101295772 B CN 101295772B
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CN
China
Prior art keywords
substrate
organic compound
compound layer
layer
vapor deposition
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Expired - Fee Related
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CN200810090709.XA
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English (en)
Chinese (zh)
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CN101295772A (zh
Inventor
池田寿雄
青山智哉
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication of CN101295772A publication Critical patent/CN101295772A/zh
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/18—Deposition of organic active material using non-liquid printing techniques, e.g. thermal transfer printing from a donor sheet
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/80—Manufacture or treatment specially adapted for the organic devices covered by this subclass using temporary substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H10K85/341—Transition metal complexes, e.g. Ru(II)polypyridine complexes
    • H10K85/342—Transition metal complexes, e.g. Ru(II)polypyridine complexes comprising iridium

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)
CN200810090709.XA 2007-04-27 2008-03-31 发光器件的制造方法 Expired - Fee Related CN101295772B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007119996 2007-04-27
JP2007-119996 2007-04-27

Publications (2)

Publication Number Publication Date
CN101295772A CN101295772A (zh) 2008-10-29
CN101295772B true CN101295772B (zh) 2012-09-05

Family

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Family Applications (1)

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CN200810090709.XA Expired - Fee Related CN101295772B (zh) 2007-04-27 2008-03-31 发光器件的制造方法

Country Status (4)

Country Link
US (1) US8431432B2 (enExample)
JP (2) JP5166942B2 (enExample)
CN (1) CN101295772B (enExample)
TW (1) TWI477195B (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5325471B2 (ja) * 2007-07-06 2013-10-23 株式会社半導体エネルギー研究所 発光装置の作製方法
US20090218219A1 (en) * 2008-02-29 2009-09-03 Semiconductor Energy Laboratory Co., Ltd. Manufacturing Apparatus
JP5416987B2 (ja) 2008-02-29 2014-02-12 株式会社半導体エネルギー研究所 成膜方法及び発光装置の作製方法
JP5238544B2 (ja) * 2008-03-07 2013-07-17 株式会社半導体エネルギー研究所 成膜方法及び発光装置の作製方法
US8409672B2 (en) * 2008-04-24 2013-04-02 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing evaporation donor substrate and method of manufacturing light-emitting device
JP2011009517A (ja) * 2009-06-26 2011-01-13 Konica Minolta Holdings Inc 有機エレクトロルミネッセンス素子
WO2011001599A1 (ja) 2009-07-02 2011-01-06 シャープ株式会社 有機ｅｌ素子、有機ｅｌ素子の製造方法、および有機ｅｌ照明装置
US8972714B2 (en) 2010-03-25 2015-03-03 Olive Medical Corporation System and method for providing a single use imaging device for medical applications
US9299942B2 (en) 2012-03-30 2016-03-29 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, display device, electronic appliance, and lighting device
US20140353594A1 (en) * 2013-05-29 2014-12-04 Shenzhen China Star Optoelectronics Technology Co., Ltd. OLED Panel, Manufacturing Method, and Related Testing Method
TWI666803B (zh) * 2014-09-17 2019-07-21 日商日鐵化學材料股份有限公司 有機電場發光元件及其製造方法
CN104762599A (zh) * 2015-04-15 2015-07-08 京东方科技集团股份有限公司 蒸镀方法和蒸镀装置
CN106910844B (zh) * 2015-12-22 2019-03-26 昆山工研院新型平板显示技术中心有限公司 Tft基板的蒸镀方法
CN108603581B (zh) 2016-02-02 2021-04-06 日本精工株式会社 蜗轮、蜗杆减速器和蜗轮的制造方法
CN107346728A (zh) * 2016-05-05 2017-11-14 上海芯晨科技有限公司 一种大尺寸硅衬底iii族氮化物外延生长方法
CN106920900B (zh) * 2017-04-05 2018-10-19 武汉华星光电技术有限公司 一种oled中发光层原料的处理方法及应用
CN118130194B (zh) * 2024-03-08 2024-09-27 四川轻化工大学 一种顶空法荧光可视化快速检测血氨的试剂盒制备及检测方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1336411A (zh) * 2000-05-19 2002-02-20 伊斯曼柯达公司 使用预掺杂的材料制备一种有机发光器件的方法
CN1441080A (zh) * 2002-02-25 2003-09-10 株式会社半导体能源研究所 发光器件制作系统和制作方法
US20050056969A1 (en) * 2003-09-16 2005-03-17 Eastman Kodak Company Forming homogeneous mixtures of organic materials for physical vapor deposition using a solvent
US20060110526A1 (en) * 2004-11-19 2006-05-25 Eastman Kodak Company Organic materials for an evaporation source

Family Cites Families (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5688551A (en) * 1995-11-13 1997-11-18 Eastman Kodak Company Method of forming an organic electroluminescent display panel
JP3831968B2 (ja) 1996-02-23 2006-10-11 ソニー株式会社 光学的素子の製造方法
KR100195175B1 (ko) 1996-12-23 1999-06-15 손욱 유기전자발광소자 유기박막용 도너필름, 이를 이용한 유기전자발광소자의 제조방법 및 그 방법에 따라 제조된 유기전자발광소자
US5937272A (en) 1997-06-06 1999-08-10 Eastman Kodak Company Patterned organic layers in a full-color organic electroluminescent display array on a thin film transistor array substrate
US6592933B2 (en) * 1997-10-15 2003-07-15 Toray Industries, Inc. Process for manufacturing organic electroluminescent device
US7090890B1 (en) * 1998-04-13 2006-08-15 The Trustees Of Princeton University Modification of polymer optoelectronic properties after film formation by impurity addition or removal
JP3175733B2 (ja) * 1998-06-17 2001-06-11 日本電気株式会社 有機ｅｌ素子の製造方法
US6165543A (en) * 1998-06-17 2000-12-26 Nec Corporation Method of making organic EL device and organic EL transfer base plate
US6114088A (en) * 1999-01-15 2000-09-05 3M Innovative Properties Company Thermal transfer element for forming multilayer devices
EP2306495B1 (en) * 1999-05-13 2017-04-19 The Trustees of Princeton University Very high efficiency organic light emitting devices based on electrophosphorescence
US6242152B1 (en) * 2000-05-03 2001-06-05 3M Innovative Properties Thermal transfer of crosslinked materials from a donor to a receptor
KR20010104215A (ko) * 2000-05-12 2001-11-24 야마자끼 순페이 발광장치 제작방법
TW519770B (en) * 2001-01-18 2003-02-01 Semiconductor Energy Lab Light emitting device and manufacturing method thereof
US20020139303A1 (en) * 2001-02-01 2002-10-03 Shunpei Yamazaki Deposition apparatus and deposition method
JP2002324669A (ja) * 2001-04-24 2002-11-08 Nippon Seiki Co Ltd 有機電界発光素子
JP4006266B2 (ja) * 2001-06-15 2007-11-14 キヤノン株式会社 発光素子及び発光素子の製造方法
US6797314B2 (en) * 2001-07-03 2004-09-28 Eastman Kodak Company Method of handling organic material in making an organic light-emitting device
CN1127576C (zh) 2001-09-17 2003-11-12 桂林正翰科技开发有限责任公司 一种糖汁脱色方法
US6566032B1 (en) * 2002-05-08 2003-05-20 Eastman Kodak Company In-situ method for making OLED devices that are moisture or oxygen-sensitive
JP4634698B2 (ja) 2002-05-17 2011-02-16 株式会社半導体エネルギー研究所 蒸着装置
TWI336905B (en) * 2002-05-17 2011-02-01 Semiconductor Energy Lab Evaporation method, evaporation device and method of fabricating light emitting device
US20040067302A1 (en) * 2002-10-08 2004-04-08 Eastman Kodak Company Laser thermal transfer gap control for oled manufacturing
JP4261923B2 (ja) * 2003-01-16 2009-05-13 キヤノン株式会社 金属配位化合物を用いた発光素子
JP4401665B2 (ja) 2003-03-20 2010-01-20 株式会社半導体エネルギー研究所 電界発光素子
US7485337B2 (en) * 2004-05-27 2009-02-03 Eastman Kodak Company Depositing an organic layer for use in OLEDs
KR100667067B1 (ko) * 2004-09-08 2007-01-10 삼성에스디아이 주식회사 레이저 전사용 도너 기판 및 그 기판을 사용하여 제조되는유기 전계 발광 소자
KR100721565B1 (ko) 2004-11-17 2007-05-23 삼성에스디아이 주식회사 저분자 유기 전계 발광 소자 및 그의 제조 방법
US20060273713A1 (en) * 2005-06-02 2006-12-07 Eastman Kodak Company Process for making an organic light-emitting device
JP4789551B2 (ja) * 2005-09-06 2011-10-12 株式会社半導体エネルギー研究所 有機ｅｌ成膜装置
US7842341B2 (en) * 2005-11-10 2010-11-30 Global Oled Technology Llc Purifying organic materials for physical vapor deposition
US20080074034A1 (en) * 2006-09-22 2008-03-27 Jou Jwo-Huei Organic Light Emitting Diode Device and Light Emitting Layer Manufacture Method Thereof
WO2008069259A1 (en) * 2006-12-05 2008-06-12 Semiconductor Energy Laboratory Co., Ltd. Film formation apparatus, film formation method, manufacturing apparatus, and method for manufacturing light-emitting device
US8119204B2 (en) * 2007-04-27 2012-02-21 Semiconductor Energy Laboratory Co., Ltd. Film formation method and method for manufacturing light-emitting device
US8367152B2 (en) * 2007-04-27 2013-02-05 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of light-emitting device
JP5325471B2 (ja) * 2007-07-06 2013-10-23 株式会社半導体エネルギー研究所 発光装置の作製方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1336411A (zh) * 2000-05-19 2002-02-20 伊斯曼柯达公司 使用预掺杂的材料制备一种有机发光器件的方法
CN1441080A (zh) * 2002-02-25 2003-09-10 株式会社半导体能源研究所 发光器件制作系统和制作方法
US20050056969A1 (en) * 2003-09-16 2005-03-17 Eastman Kodak Company Forming homogeneous mixtures of organic materials for physical vapor deposition using a solvent
US20060110526A1 (en) * 2004-11-19 2006-05-25 Eastman Kodak Company Organic materials for an evaporation source

Also Published As

Publication number Publication date
TWI477195B (zh) 2015-03-11
CN101295772A (zh) 2008-10-29
US8431432B2 (en) 2013-04-30
JP2013084613A (ja) 2013-05-09
TW200904242A (en) 2009-01-16
JP5166942B2 (ja) 2013-03-21
US20080268561A1 (en) 2008-10-30
JP2008293961A (ja) 2008-12-04

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