JP5166942B2 - 発光装置の作製方法 - Google Patents

発光装置の作製方法 Download PDF

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Publication number
JP5166942B2
JP5166942B2 JP2008096755A JP2008096755A JP5166942B2 JP 5166942 B2 JP5166942 B2 JP 5166942B2 JP 2008096755 A JP2008096755 A JP 2008096755A JP 2008096755 A JP2008096755 A JP 2008096755A JP 5166942 B2 JP5166942 B2 JP 5166942B2
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Japan
Prior art keywords
substrate
layer
organic compound
light
compound layer
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Expired - Fee Related
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JP2008096755A
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English (en)
Japanese (ja)
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JP2008293961A (ja
JP2008293961A5 (enExample
Inventor
寿雄 池田
智哉 青山
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2008096755A priority Critical patent/JP5166942B2/ja
Publication of JP2008293961A publication Critical patent/JP2008293961A/ja
Publication of JP2008293961A5 publication Critical patent/JP2008293961A5/ja
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/18—Deposition of organic active material using non-liquid printing techniques, e.g. thermal transfer printing from a donor sheet
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/80—Manufacture or treatment specially adapted for the organic devices covered by this subclass using temporary substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H10K85/341—Transition metal complexes, e.g. Ru(II)polypyridine complexes
    • H10K85/342—Transition metal complexes, e.g. Ru(II)polypyridine complexes comprising iridium

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)
JP2008096755A 2007-04-27 2008-04-03 発光装置の作製方法 Expired - Fee Related JP5166942B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008096755A JP5166942B2 (ja) 2007-04-27 2008-04-03 発光装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007119996 2007-04-27
JP2007119996 2007-04-27
JP2008096755A JP5166942B2 (ja) 2007-04-27 2008-04-03 発光装置の作製方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2012278788A Division JP2013084613A (ja) 2007-04-27 2012-12-21 発光装置の作製方法

Publications (3)

Publication Number Publication Date
JP2008293961A JP2008293961A (ja) 2008-12-04
JP2008293961A5 JP2008293961A5 (enExample) 2011-05-06
JP5166942B2 true JP5166942B2 (ja) 2013-03-21

Family

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Family Applications (2)

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JP2008096755A Expired - Fee Related JP5166942B2 (ja) 2007-04-27 2008-04-03 発光装置の作製方法
JP2012278788A Withdrawn JP2013084613A (ja) 2007-04-27 2012-12-21 発光装置の作製方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2012278788A Withdrawn JP2013084613A (ja) 2007-04-27 2012-12-21 発光装置の作製方法

Country Status (4)

Country Link
US (1) US8431432B2 (enExample)
JP (2) JP5166942B2 (enExample)
CN (1) CN101295772B (enExample)
TW (1) TWI477195B (enExample)

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JP5325471B2 (ja) * 2007-07-06 2013-10-23 株式会社半導体エネルギー研究所 発光装置の作製方法
US20090218219A1 (en) * 2008-02-29 2009-09-03 Semiconductor Energy Laboratory Co., Ltd. Manufacturing Apparatus
JP5416987B2 (ja) 2008-02-29 2014-02-12 株式会社半導体エネルギー研究所 成膜方法及び発光装置の作製方法
JP5238544B2 (ja) * 2008-03-07 2013-07-17 株式会社半導体エネルギー研究所 成膜方法及び発光装置の作製方法
US8409672B2 (en) * 2008-04-24 2013-04-02 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing evaporation donor substrate and method of manufacturing light-emitting device
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US9299942B2 (en) 2012-03-30 2016-03-29 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, display device, electronic appliance, and lighting device
US20140353594A1 (en) * 2013-05-29 2014-12-04 Shenzhen China Star Optoelectronics Technology Co., Ltd. OLED Panel, Manufacturing Method, and Related Testing Method
TWI666803B (zh) * 2014-09-17 2019-07-21 日商日鐵化學材料股份有限公司 有機電場發光元件及其製造方法
CN104762599A (zh) * 2015-04-15 2015-07-08 京东方科技集团股份有限公司 蒸镀方法和蒸镀装置
CN106910844B (zh) * 2015-12-22 2019-03-26 昆山工研院新型平板显示技术中心有限公司 Tft基板的蒸镀方法
CN108603581B (zh) 2016-02-02 2021-04-06 日本精工株式会社 蜗轮、蜗杆减速器和蜗轮的制造方法
CN107346728A (zh) * 2016-05-05 2017-11-14 上海芯晨科技有限公司 一种大尺寸硅衬底iii族氮化物外延生长方法
CN106920900B (zh) * 2017-04-05 2018-10-19 武汉华星光电技术有限公司 一种oled中发光层原料的处理方法及应用
CN118130194B (zh) * 2024-03-08 2024-09-27 四川轻化工大学 一种顶空法荧光可视化快速检测血氨的试剂盒制备及检测方法

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Also Published As

Publication number Publication date
TWI477195B (zh) 2015-03-11
CN101295772B (zh) 2012-09-05
CN101295772A (zh) 2008-10-29
US8431432B2 (en) 2013-04-30
JP2013084613A (ja) 2013-05-09
TW200904242A (en) 2009-01-16
US20080268561A1 (en) 2008-10-30
JP2008293961A (ja) 2008-12-04

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